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Theoretical Investigations Of The Structure And Properties Of Point Defects In Amorphous Silicon Dioxide
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Book Synopsis Theoretical Investigations of the Structure and Properties of Point Defects in Amorphous Silicon Dioxide by : Antonio Mario Ferreira
Download or read book Theoretical Investigations of the Structure and Properties of Point Defects in Amorphous Silicon Dioxide written by Antonio Mario Ferreira and published by . This book was released on 2000 with total page 316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide by : R. A. B. Devine
Download or read book Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide written by R. A. B. Devine and published by John Wiley & Sons. This book was released on 2000-05-18 with total page 538 pages. Available in PDF, EPUB and Kindle. Book excerpt: Structure and Imperfections in Amorphous and Crystalline Silicon Dioxide Edited by R. A. B. Devine, University of New Mexico, USA J.-P. Duraud, ESRF, Grenoble, France and E. Dooryhée, ESRF, Grenoble, France Silicon dioxide is one of the most common naturally occurring materials. Its applications range from nuclear waste storage to optical fibre communications to silicon microelectronics. Experts from America, Europe and Japan have written chapters covering both the amorphous and the crystalline phases of the material with particular reference to its structure and defects. The book is divided into four sections: Topological Models for the Crystalline and Amorphous Phases Electronic Structure Macroscopic and Point Defects Processing and Applications of Crystalline and Amorphous Phases Engineers, researchers and postgraduate students of materials science, physics and engineering will all find this an extremely useful addition to their libraries.
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Theory of Point Defects in SiO2-based Electronic Devices: Optical Transitions, EPR Properties, Formation Energies by :
Download or read book Theory of Point Defects in SiO2-based Electronic Devices: Optical Transitions, EPR Properties, Formation Energies written by and published by . This book was released on 1998 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report results from a contract tasking Universita di Milano as follows: The contractor will investigate point defects in crystalline and amorphous silica. Three main topics will be studied: (1) the electronic structure of the E' centers, and various models for them; (2) electron trapping in silica, for which new, larger models which increase electron affinity of the system by allowing a demoralization of excess negative charge over many atomic centers will be investigated: (3) hydrogen diffusion in silica, specifically, mechanisms to explain the observed temperature dependence of hydrogen emission under electron injection in silica.
Book Synopsis Defects in SiO2 and Related Dielectrics: Science and Technology by : Gianfranco Pacchioni
Download or read book Defects in SiO2 and Related Dielectrics: Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Book Synopsis New Theoretical Studies of Structure and Defects in Hydrogenated Amorphous Silicon by : Douglas Clippinger Allan
Download or read book New Theoretical Studies of Structure and Defects in Hydrogenated Amorphous Silicon written by Douglas Clippinger Allan and published by . This book was released on 1982 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Effect of Environment on the Structure and Properties of Point Defects in Silicon Dioxide Systems by : Lonnie Davis Crosby
Download or read book The Effect of Environment on the Structure and Properties of Point Defects in Silicon Dioxide Systems written by Lonnie Davis Crosby and published by . This book was released on 2007 with total page 234 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Dissertation Abstracts International by :
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2001 with total page 832 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface Defects in Wide-Bandgap LiF, SiO2, and ZnO Crystals by : Utkirjon Sharopov
Download or read book Surface Defects in Wide-Bandgap LiF, SiO2, and ZnO Crystals written by Utkirjon Sharopov and published by Springer Nature. This book was released on with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Protection of Materials and Structures from the Space Environment by : Jacob Kleiman
Download or read book Protection of Materials and Structures from the Space Environment written by Jacob Kleiman and published by Springer. This book was released on 2017-05-16 with total page 591 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings published in this book document and foster the goals of the 11th International Space Conference on “Protection of Materials and Structures from Space Environment” ICPMSE-11 to facilitate exchanges between members of the various engineering and science disciplines involved in the development of space materials. Contributions cover aspects of interaction with space environment of LEO, GEO, Deep Space, Planetary environments, ground-based qualification and in-flight experiments, as well as lessons learned from operational vehicles that are closely interrelated to disciplines of atmospheric sciences, solar-terrestrial interactions and space life sciences.
Book Synopsis On the Properties of Point Defects in Silicon Nanostructures from Ab Initio Calculations by : Fabiano Corsetti
Download or read book On the Properties of Point Defects in Silicon Nanostructures from Ab Initio Calculations written by Fabiano Corsetti and published by . This book was released on 2012 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we apply a variety of computational methods based on density- functional theory (DFT) to the study of defect centres in bulk silicon and silicon nanostructures. Firstly, we discuss the system-size convergence of point defect properties in the supercell method for deep-level defects in bulk silicon; we consider both the vacancy and gold impurity. For the vacancy, we investigate systematically the main contributions to the finite size error that lead to the well-known slow convergence with respect to system size of defect properties, and demonstrate that different properties of interest can benefit from the use of different k-point sampling schemes. We also present a simple and accurate method for calculating the potential alignment correction to the valence band maximum of charged defect supercells by using maxim ally-localised Wannier functions, and show that the localised view of the electronic structure provided by them gives a clear description of the nature of the electronic bonding at the defect centre. For the gold impurity, we show that the system becomes a non-spin-polarised negative- U centre due to the effect of J ahn- Teller distortion, thus providing a simple explanation for the absent electron paramagnetic resonance signal for gold in silicon. The calculated transition levels are found to be in excellent agreement with experimental measurements. We then investigate the segregation of arsenic impurities in silicon close to an interface with amorphous silica. We employ a multiscale approach, gener- ating a realistic disordered interface structure from Monte Carlo simulation, with a continuous random network model of the system parametrised from DFT. We calculate the segregation energy using DFT for a large number of substitutional sites encompassing all the oxidation states of silicon, and show that the results can be understood with a minimal model based only on the local strain and volume of the defect site.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Directory of Graduate Research written by and published by . This book was released on 2001 with total page 1846 pages. Available in PDF, EPUB and Kindle. Book excerpt: Faculties, publications and doctoral theses in departments or divisions of chemistry, chemical engineering, biochemistry and pharmaceutical and/or medicinal chemistry at universities in the United States and Canada.
Book Synopsis Point Defects and Interfaces in Insulating Solids by : Frank J. Feigl
Download or read book Point Defects and Interfaces in Insulating Solids written by Frank J. Feigl and published by . This book was released on 1989 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: This contract was the latest phase in a long-standing relationship between ONR and the principal investigators on the experimental and theoretical study of silicon dioxide and the silicon - silicon dioxide interface. During this period we made important contributions towards understanding both bulk silicon dioxide and the interface, which has recently been called 'the most important material system of our era(1)'. We carried out a number of experiments on MOS (metal-oxide-semiconductor) systems. These experiments were designed to study such important features as chlorine incorporation, hydrogen migration, interface trap generation, defect structures associated with fabrication conditions, and hysteresis effects associated with charge trapping at near-interface defects. We carried out theoretical studies on bulk oxide defects, including the peroxyl radical, the non-bridging oxygen hole center, and various E' centers. In the process we took the lead in applying the semiempirical molecular orbital technique MINDO/3 to such defects, which others are now following. Keywords: Tunneling electronics, Silicon, Mathematical models, E centers, Lattice relaxation, Semiconductor-insulator interfaces. (aw).
Book Synopsis Theoretical Studies of the Chemistry and Physics of Oxygen in Silicon by : Lawrence C. Snyder
Download or read book Theoretical Studies of the Chemistry and Physics of Oxygen in Silicon written by Lawrence C. Snyder and published by . This book was released on 1988 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: We have developed a cyclic-cluster program to compute the structure and properties of defects in crystalline solids. We have found the semi-empirical electronic structure method MINDO/3 to give the best account of the structure, stability and states near the gap for defects in silicon. We have applied the cyclic cluster program to describe the chemistry and physics of hydrogen and oxygen in a silicon crystal. We have concluded that a di-ylid is a promising candidate for the core of the 450 oxygen thermal donor in silicon. We have discovered that a four-member ring containing two oxygen atoms is likely to diffuse much faster than interstitial oxygen in silicon. We have applied perturbation theory to give a qualitative explanation of the ladder of effective mass states associated with oxygen clusters in silicon and germanium. Keywords: Semiconductor theory, Silicon defects, Oxygen thermal donors. (JES).
Download or read book Energy Research Abstracts written by and published by . This book was released on 1994-10 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Theoretical Investigation of Point Defects and Diffusion in Metals Containing Elastic Stress Fields by : David Otis Welch
Download or read book A Theoretical Investigation of Point Defects and Diffusion in Metals Containing Elastic Stress Fields written by David Otis Welch and published by . This book was released on 1964 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt:
