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The Study Of Radiation Damages In Neutron Transmutation Doped Silicon Using Epr Technique
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Book Synopsis The Study of Radiation Damages in Neutron Transmutation Doped Silicon Using EPR Technique by : Mohammad Saeed Uddin
Download or read book The Study of Radiation Damages in Neutron Transmutation Doped Silicon Using EPR Technique written by Mohammad Saeed Uddin and published by . This book was released on 1985 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication by : David R. Myers
Download or read book Technical Impediments to a More Effective Utilization of Neutron Transmutation Doped Silicon for High-power Device Fabrication written by David R. Myers and published by . This book was released on 1980 with total page 42 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Investigation of Defect Centers in a Neutron Transmutation Doped Silicon Using the EPR Technique by : Onyemachi Ezebuiroh
Download or read book Investigation of Defect Centers in a Neutron Transmutation Doped Silicon Using the EPR Technique written by Onyemachi Ezebuiroh and published by . This book was released on 1984 with total page 104 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys
Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2002-08-21 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.
Book Synopsis EPR Investigation of Neutron Transmutation Doped Silicon: Boron by : Tuan Nang Pham
Download or read book EPR Investigation of Neutron Transmutation Doped Silicon: Boron written by Tuan Nang Pham and published by . This book was released on 1982 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors by : K. Kuriyama
Download or read book Ion Channeling Study of Damage in Neutron Transmutation Doped Semiconductors written by K. Kuriyama and published by . This book was released on 1984 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: Neutron irradiation at a flux of 5 x 1011 neutrons /cm2 sec for 18 hr has been performed on n-type GaAs with 5.9 x 10-2?-cm (n= 2.1 x 1016/cm3). In annealing experiments for electrical properties, it is found that neutron irradiated-induced damages are removed by the annealing temperature at 800°C. The recovery of radiation damage is also confirmed from the improvement of photoluminescence for GaAs annealed at 800°C. The magnitude of the average displacement damage introduced during neutron irradiation is estimated to be 0.15 A by the measurement of Rutherford Backscattering channeling.
Book Synopsis Neutron-Transmutation-Doped Silicon by : Jens Guldberg
Download or read book Neutron-Transmutation-Doped Silicon written by Jens Guldberg and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 493 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the papers presented at the Third International Conference on Neutron Transmutation Doping of Silicon held in Copenhagen on August 27-29, 1980. The first symposium associated with neutron transmutation doping technology as such was arranged in 1976 at Oak Ridge National Laboratory by John Cleland. At this time it had become clear that the technology could be implemented on a commercial scale and that several types of power devices in the electronic industry would benefit from employing neutron transmutation doped silicon in the fabrication proces's'. Two years later the Second International Conference on Neutron Transmutation Doping of Semiconductors was arranged at the University of Missouri, Columbia, by Jon Meese. On this occasion the various aspects of silicon fabrication were reviewed, including irradiation control, radiation induced defects, device optimization, and possible benefits of irradiating other semiconductor compounds. In view of the now wide spread acceptance of neutron doped silicon in the power device industry the present conference was largely directed towards the current status of transmutation doping of silicon. Accordingly, the scope of the three day confe rence was to review developments in the technology which had occurred during the two years which had passed since the previous conference. In addition, brief accounts were given with respect to other semiconducting compounds and emerging irradiation techniques which may impact on device design principles in the future.
Book Synopsis Electron Radiation Damage in Semiconductors and Metals by : James W. Corbett
Download or read book Electron Radiation Damage in Semiconductors and Metals written by James W. Corbett and published by . This book was released on 1966 with total page 428 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of Radiation Damage in Semiconductors by : James W. Corbett
Download or read book Studies of Radiation Damage in Semiconductors written by James W. Corbett and published by . This book was released on 1972 with total page 22 pages. Available in PDF, EPUB and Kindle. Book excerpt: The program on the study of radiation damage in semiconductors is described. This work divides into three areas: (1) EPR measurements on silicon and diamond; (2) optical and electrical measurements on silicon and diamond; and (3) theoretical work on these materials and their defect structures, including the nature of the amorphous state.
Book Synopsis Electron Paramagnetic Resonance of Defect Centers in Neutron Transmutation Doped Silicon by : Mao-Sheng J. Lin
Download or read book Electron Paramagnetic Resonance of Defect Centers in Neutron Transmutation Doped Silicon written by Mao-Sheng J. Lin and published by . This book was released on 1984 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Damage in Semiconductors by : James W. Corbett
Download or read book Radiation Damage in Semiconductors written by James W. Corbett and published by . This book was released on 1972 with total page 70 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work on radiation damage in semiconductors carried out at SUNY/Albany is described. The work is primarily on EPR spectra observed in neutron irradiated silicon. The observation of seven new spectra are discussed including their behavior on annealing (with and without a uniaxially stress). The photo response of EPR spectra is considered. The identification of a major center - the P-1 center, is established as the negative charge state of a five-vacancy center. (Author).
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1964 with total page 2300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1978 with total page 1116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book INIS Atomindex written by and published by . This book was released on 1988 with total page 860 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1985 with total page 1292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics, Uspekhi written by and published by . This book was released on 1994 with total page 666 pages. Available in PDF, EPUB and Kindle. Book excerpt:
