The Source Drain Engineering Of Nanoscale Germanium Based Mos Devices

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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices

Author : Zhiqiang Li
Publisher : Springer
ISBN 13 : 3662496836
Total Pages : 59 pages
Book Rating : 4.6/5 (624 download)

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Book Synopsis The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices by : Zhiqiang Li

Download or read book The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices written by Zhiqiang Li and published by Springer. This book was released on 2016-03-24 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600°C and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.

Advanced Nanoscale MOSFET Architectures

Author : Kalyan Biswas
Publisher : John Wiley & Sons
ISBN 13 : 1394188951
Total Pages : 340 pages
Book Rating : 4.3/5 (941 download)

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Book Synopsis Advanced Nanoscale MOSFET Architectures by : Kalyan Biswas

Download or read book Advanced Nanoscale MOSFET Architectures written by Kalyan Biswas and published by John Wiley & Sons. This book was released on 2024-05-29 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt: Comprehensive reference on the fundamental principles and basic physics dictating metal–oxide–semiconductor field-effect transistor (MOSFET) operation Advanced Nanoscale MOSFET Architectures provides an in-depth review of modern metal–oxide–semiconductor field-effect transistor (MOSFET) device technologies and advancements, with information on their operation, various architectures, fabrication, materials, modeling and simulation methods, circuit applications, and other aspects related to nanoscale MOSFET technology. The text begins with an introduction to the foundational technology before moving on to describe challenges associated with the scaling of nanoscale devices. Other topics covered include device physics and operation, strain engineering for highly scaled MOSFETs, tunnel FET, graphene based field effect transistors, and more. The text also compares silicon bulk and devices, nanosheet transistors and introduces low-power circuit design using advanced MOSFETs. Additional topics covered include: High-k gate dielectrics and metal gate electrodes for multi-gate MOSFETs, covering gate stack processing and metal gate modification Strain engineering in 3D complementary metal-oxide semiconductors (CMOS) and its scaling impact, and strain engineering in silicon–germanium (SiGe) FinFET and its challenges and future perspectives TCAD simulation of multi-gate MOSFET, covering model calibration and device performance for analog and RF applications Description of the design of an analog amplifier circuit using digital CMOS technology of SCL for ultra-low power VLSI applications Advanced Nanoscale MOSFET Architectures helps readers understand device physics and design of new structures and material compositions, making it an important resource for the researchers and professionals who are carrying out research in the field, along with students in related programs of study.

Nanoscale MOS Transistors

Author : David Esseni
Publisher : Cambridge University Press
ISBN 13 : 1139494384
Total Pages : 489 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Nanoscale MOS Transistors by : David Esseni

Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

Carrier Transport in Nanoscale MOS Transistors

Author : Hideaki Tsuchiya
Publisher : John Wiley & Sons
ISBN 13 : 1118871723
Total Pages : 248 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya

Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Nano-CMOS Circuit and Physical Design

Author : Ban Wong
Publisher : John Wiley & Sons
ISBN 13 : 0471678864
Total Pages : 413 pages
Book Rating : 4.4/5 (716 download)

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Book Synopsis Nano-CMOS Circuit and Physical Design by : Ban Wong

Download or read book Nano-CMOS Circuit and Physical Design written by Ban Wong and published by John Wiley & Sons. This book was released on 2005-04-08 with total page 413 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on the authors' expansive collection of notes taken over the years, Nano-CMOS Circuit and Physical Design bridges the gap between physical and circuit design and fabrication processing, manufacturability, and yield. This innovative book covers: process technology, including sub-wavelength optical lithography; impact of process scaling on circuit and physical implementation and low power with leaky transistors; and DFM, yield, and the impact of physical implementation.

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 1000404935
Total Pages : 275 pages
Book Rating : 4.0/5 (4 download)

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Book Synopsis Stress and Strain Engineering at Nanoscale in Semiconductor Devices by : Chinmay K. Maiti

Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by Chinmay K. Maiti and published by CRC Press. This book was released on 2021-06-29 with total page 275 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this book encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicongermanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features Covers stressstrain engineering in semiconductor devices, such as FinFETs and III-V Nitride-based devices Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations Explains the development of strain/stress relationships and their effects on the band structures of strained substrates Uses design of experiments to find the optimum process conditions Illustrates the use of TCAD for modeling strain-engineered FinFETs for DC and AC performance predictions This book is for graduate students and researchers studying solid-state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, and electronic materials and devices.

Fundamentals of Nanoscaled Field Effect Transistors

Author : Amit Chaudhry
Publisher : Springer Science & Business Media
ISBN 13 : 1461468221
Total Pages : 211 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Fundamentals of Nanoscaled Field Effect Transistors by : Amit Chaudhry

Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.

Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications

Author : Yosi Shacham-Diamand
Publisher : Springer Science & Business Media
ISBN 13 : 0387958681
Total Pages : 545 pages
Book Rating : 4.3/5 (879 download)

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Book Synopsis Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications by : Yosi Shacham-Diamand

Download or read book Advanced Nanoscale ULSI Interconnects: Fundamentals and Applications written by Yosi Shacham-Diamand and published by Springer Science & Business Media. This book was released on 2009-09-19 with total page 545 pages. Available in PDF, EPUB and Kindle. Book excerpt: In Advanced ULSI interconnects – fundamentals and applications we bring a comprehensive description of copper-based interconnect technology for ultra-lar- scale integration (ULSI) technology for integrated circuit (IC) application. In- grated circuit technology is the base for all modern electronics systems. You can ?nd electronics systems today everywhere: from toys and home appliances to a- planes and space shuttles. Electronics systems form the hardware that together with software are the bases of the modern information society. The rapid growth and vast exploitation of modern electronics system create a strong demand for new and improved electronic circuits as demonstrated by the amazing progress in the ?eld of ULSI technology. This progress is well described by the famous “Moore’s law” which states, in its most general form, that all the metrics that describe integrated circuit performance (e. g. , speed, number of devices, chip area) improve expon- tially as a function of time. For example, the number of components per chip d- bles every 18 months and the critical dimension on a chip has shrunk by 50% every 2 years on average in the last 30 years. This rapid growth in integrated circuits te- nology results in highly complex integrated circuits with an increasing number of interconnects on chips and between the chip and its package. The complexity of the interconnect network on chips involves an increasing number of metal lines per interconnect level, more interconnect levels, and at the same time a reduction in the interconnect line critical dimensions.

Metal Impurities in Silicon- and Germanium-Based Technologies

Author : Cor Claeys
Publisher : Springer
ISBN 13 : 3319939254
Total Pages : 438 pages
Book Rating : 4.3/5 (199 download)

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Book Synopsis Metal Impurities in Silicon- and Germanium-Based Technologies by : Cor Claeys

Download or read book Metal Impurities in Silicon- and Germanium-Based Technologies written by Cor Claeys and published by Springer. This book was released on 2018-08-13 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices’ performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.

Nanoscale Silicon Devices

Author : Shunri Oda
Publisher : CRC Press
ISBN 13 : 9781138749320
Total Pages : pages
Book Rating : 4.7/5 (493 download)

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Book Synopsis Nanoscale Silicon Devices by : Shunri Oda

Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2017-07-26 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.

Toward Quantum FinFET

Author : Weihua Han
Publisher : Springer Science & Business Media
ISBN 13 : 3319020218
Total Pages : 369 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Toward Quantum FinFET by : Weihua Han

Download or read book Toward Quantum FinFET written by Weihua Han and published by Springer Science & Business Media. This book was released on 2013-11-23 with total page 369 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews a range of quantum phenomena in novel nanoscale transistors called FinFETs, including quantized conductance of 1D transport, single electron effect, tunneling transport, etc. The goal is to create a fundamental bridge between quantum FinFET and nanotechnology to stimulate readers' interest in developing new types of semiconductor technology. Although the rapid development of micro-nano fabrication is driving the MOSFET downscaling trend that is evolving from planar channel to nonplanar FinFET, silicon-based CMOS technology is expected to face fundamental limits in the near future. Therefore, new types of nanoscale devices are being investigated aggressively to take advantage of the quantum effect in carrier transport. The quantum confinement effect of FinFET at room temperatures was reported following the breakthrough to sub-10nm scale technology in silicon nanowires. With chapters written by leading scientists throughout the world, Toward Quantum FinFET provides a comprehensive introduction to the field as well as a platform for knowledge sharing and dissemination of the latest advances. As a roadmap to guide further research in an area of increasing importance for the future development of materials science, nanofabrication technology, and nano-electronic devices, the book can be recommended for Physics, Electrical Engineering, and Materials Science departments, and as a reference on micro-nano electronic science and device design. Offers comprehensive coverage of novel nanoscale transistors with quantum confinement effect Provides the keys to understanding the emerging area of the quantum FinFET Written by leading experts in each research area Describes a key enabling technology for research and development of nanofabrication and nanoelectronic devices

Electrical and Electronic Devices, Circuits, and Materials

Author : Suman Lata Tripathi
Publisher : John Wiley & Sons
ISBN 13 : 1119755085
Total Pages : 608 pages
Book Rating : 4.1/5 (197 download)

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Book Synopsis Electrical and Electronic Devices, Circuits, and Materials by : Suman Lata Tripathi

Download or read book Electrical and Electronic Devices, Circuits, and Materials written by Suman Lata Tripathi and published by John Wiley & Sons. This book was released on 2021-03-24 with total page 608 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demand for electronic devices for private and industrial purposes lead designers and researchers to explore new electronic devices and circuits that can perform several tasks efficiently with low IC area and low power consumption. In addition, the increasing demand for portable devices intensifies the call from industry to design sensor elements, an efficient storage cell, and large capacity memory elements. Several industry-related issues have also forced a redesign of basic electronic components for certain specific applications. The researchers, designers, and students working in the area of electronic devices, circuits, and materials sometimesneed standard examples with certain specifications. This breakthrough work presents this knowledge of standard electronic device and circuit design analysis, including advanced technologies and materials. This outstanding new volume presents the basic concepts and fundamentals behind devices, circuits, and systems. It is a valuable reference for the veteran engineer and a learning tool for the student, the practicing engineer, or an engineer from another field crossing over into electrical engineering. It is a must-have for any library.

Contemporary Trends in Semiconductor Devices

Author : Rupam Goswami
Publisher : Springer Nature
ISBN 13 : 981169124X
Total Pages : 313 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Contemporary Trends in Semiconductor Devices by : Rupam Goswami

Download or read book Contemporary Trends in Semiconductor Devices written by Rupam Goswami and published by Springer Nature. This book was released on 2022-02-16 with total page 313 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers evolution, concept and applications of modern semiconductor devices such as tunnel field effect transistors (TFETs), vertical super-thin body MOSFETs, ion sensing FETs (ISFETs), non-conventional solar cells, opto-electro mechanical devices and thin film transistors (TFTs). Comprising of theory, experimentation and applications of devices, the chapters describe state-of-art methods and techniques which shall be highly assistive in having an overall perspective on emerging technologies and working on a research area. The book is aimed at the scholars, enthusiasts and researchers who are currently working on devices in the contemporary era of semiconductor devices. Additionally, the chapters are lucid and descriptive and carry the potential of serving as a reference book for scholars in their undergraduate studies, who are looking ahead for a prospective career in semiconductor devices.

Stress and Strain Engineering at Nanoscale in Semiconductor Devices

Author : CHINMAY K. MAITI
Publisher : CRC Press
ISBN 13 : 9780367519292
Total Pages : 304 pages
Book Rating : 4.5/5 (192 download)

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Book Synopsis Stress and Strain Engineering at Nanoscale in Semiconductor Devices by : CHINMAY K. MAITI

Download or read book Stress and Strain Engineering at Nanoscale in Semiconductor Devices written by CHINMAY K. MAITI and published by CRC Press. This book was released on 2021-06-28 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anticipating a limit to the continuous miniaturization (More-Moore), intense research efforts are being made to co-integrate various functionalities (More-than-Moore) in a single chip. Currently, strain engineering is the main technique used to enhance the performance of advanced semiconductor devices. Written from an engineering applications standpoint, this monograph encompasses broad areas of semiconductor devices involving the design, simulation, and analysis of Si, heterostructure silicon-germanium (SiGe), and III-N compound semiconductor devices. The book provides the background and physical insight needed to understand the new and future developments in the technology CAD (TCAD) design at the nanoscale. Features: Covers Stress-Strain engineering in semiconductor devices such as FinFETs and III-V Nitride based Devices. Includes comprehensive mobility model for strained substrates in global and local strain techniques and their implementation in device simulations. Explains development of strain/stress relationships and their effects on the band structures of strained substrates. Uses design of experiments to find the optimum process conditions. Illustrates use of TCAD for modeling of strain-engineered FinFETs for DC and AC performance predictions. This book aims at graduate students and researchers in solid state devices and materials, microelectronics, systems and controls, power electronics, nanomaterials, electronic material and devices.

Nanoscale Devices

Author : Brajesh Kumar Kaushik
Publisher : CRC Press
ISBN 13 : 1351670212
Total Pages : 410 pages
Book Rating : 4.3/5 (516 download)

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Book Synopsis Nanoscale Devices by : Brajesh Kumar Kaushik

Download or read book Nanoscale Devices written by Brajesh Kumar Kaushik and published by CRC Press. This book was released on 2018-11-16 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary aim of this book is to discuss various aspects of nanoscale device design and their applications including transport mechanism, modeling, and circuit applications. . Provides a platform for modeling and analysis of state-of-the-art devices in nanoscale regime, reviews issues related to optimizing the sub-nanometer device performance and addresses simulation aspect and/or fabrication process of devices Also, includes design problems at the end of each chapter

Innovations in Electrical and Electronic Engineering

Author : Saad Mekhilef
Publisher : Springer Nature
ISBN 13 : 9811607494
Total Pages : 987 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Innovations in Electrical and Electronic Engineering by : Saad Mekhilef

Download or read book Innovations in Electrical and Electronic Engineering written by Saad Mekhilef and published by Springer Nature. This book was released on 2021-05-24 with total page 987 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents selected papers from the 2021 International Conference on Electrical and Electronics Engineering (ICEEE 2020), held on January 2–3, 2021. The book focuses on the current developments in various fields of electrical and electronics engineering, such as power generation, transmission and distribution; renewable energy sources and technologies; power electronics and applications; robotics; artificial intelligence and IoT; control, automation and instrumentation; electronics devices, circuits and systems; wireless and optical communication; RF and microwaves; VLSI; and signal processing. The book is a valuable resource for academics and industry professionals alike.

Innovations in Cyber Physical Systems

Author : Jawar Singh
Publisher : Springer Nature
ISBN 13 : 9811641498
Total Pages : 807 pages
Book Rating : 4.8/5 (116 download)

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Book Synopsis Innovations in Cyber Physical Systems by : Jawar Singh

Download or read book Innovations in Cyber Physical Systems written by Jawar Singh and published by Springer Nature. This book was released on 2021-09-09 with total page 807 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents a collection of peer-reviewed articles from the International Conference on Innovations in Cyber Physical Systems (ICICPS 2020). The conference provided opportunities for the presentation of new research results and discussion about them. It was also an opportunity to generation of new ideas in all CPS aspects, including theory, tools, applications, systems, test-beds and field deployments. The range of topics explored is wide, and covers security, control, optimization, machine learning, game theory, mechanism design, mobile and cloud computing, model-based design, verification, data mining/analytics, signal processing, and human-in-the-loop shared or supervisory control. This book will be useful to researchers, students, industrialist, developers, and practitioners alike.