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The Si Sio2 System
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Download or read book The Si-SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Book Synopsis Generation of Interface States in the Si-SiO2 System by Passage of Electrons by : Stella Pang
Download or read book Generation of Interface States in the Si-SiO2 System by Passage of Electrons written by Stella Pang and published by . This book was released on 1982 with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of the Generation of Interface States in the Si-SiO2 System After High-field Stress and After X-irradiation by : Genda Hu
Download or read book Study of the Generation of Interface States in the Si-SiO2 System After High-field Stress and After X-irradiation written by Genda Hu and published by . This book was released on 1980 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 by : Hisham Z. Massoud
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Temperature- and Field-dependence of the Generation of Interface States in the Si-SiO2 System by : Kenneth Jzyh-kang Wu
Download or read book Temperature- and Field-dependence of the Generation of Interface States in the Si-SiO2 System written by Kenneth Jzyh-kang Wu and published by . This book was released on 1983 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : B.E. Deal
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.
Book Synopsis A Study of the Ge-GeO2 and Si-SiO2 Systems by : Petros Zavitsanos
Download or read book A Study of the Ge-GeO2 and Si-SiO2 Systems written by Petros Zavitsanos and published by . This book was released on 1955 with total page 8 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Ge-GeO2 and Si-SiO2 systems have been studied by thermal analysis and the phase diagrams partially worked out.
Book Synopsis Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System by : Hing Wong
Download or read book Implantation Induced Charge Trapping and Interface States Generation in Si-SiO2 System written by Hing Wong and published by . This book was released on 1986 with total page 62 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Behavior of Gold in the Si/SiO2 Interface System from Radiochemical and MOS Analysis by : Chester J. Slabinski
Download or read book The Behavior of Gold in the Si/SiO2 Interface System from Radiochemical and MOS Analysis written by Chester J. Slabinski and published by . This book was released on 1969 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ellipsometric Tables of the Si-Sio2 System for Mercury and HeNe Laser Spectral Lines by : G. Gergely
Download or read book Ellipsometric Tables of the Si-Sio2 System for Mercury and HeNe Laser Spectral Lines written by G. Gergely and published by . This book was released on 1971 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon by : B. E. Deal
Download or read book Structural and Electrical Investigation of the Si-SiO2 Interface in Thermally Oxidized Silicon written by B. E. Deal and published by . This book was released on 1979 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: The dependence of fixed oxide charge density (Q sub ss)/q), interface state density (N sub st), and electron spin resonance P sub b signals on thermal oxidation process variables as well as their interrelationship has been investigated. Both n- and p-type silicon substrates having (111) and (100) orientation were employed in this study. Measurement techniques included conventional 1 MHz capacitance-voltage (C-V) analysis, quasistatic C-V analysis, and electron spin resonance. The oxide charges resulting from postoxidation in situ anneal in nitrogen were found to be similar in nature and magnitude to those obtained following a similar treatment in argon. Some reduction in N sub st was observed for thicker oxides following a post-metallization H2 anneal. Strong evidence is obtained for a proportionality between ESR signals and interface states density with varying process parameters modifying the P sub b to N sub st relationship. The effects of iron ion implantation (before or after oxidation) on oxide charges and P sub b signals has also been investigated. This work, in addition to clarifying the relationship between fixed oxide charges, interface states, and ESR P sub b signals, demonstrates the significance of ESR as a tool in the characterization of the Si-SiO2 system. (Author).
Book Synopsis Ellipsometric tables of the Si-SiO2, system for mercury and HeNe laser spectral lines by : G. Bergely
Download or read book Ellipsometric tables of the Si-SiO2, system for mercury and HeNe laser spectral lines written by G. Bergely and published by . This book was released on 1971 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ellipsometric Tables of the Si-SiO2 System for Mercury and HeNe Laser Spectral Lines. Edited by G. Gergely, with the Co-operation of G. Forgács, B. Sz0ucs [and] D. Van Phouc by : Gy0orgy Gergely
Download or read book Ellipsometric Tables of the Si-SiO2 System for Mercury and HeNe Laser Spectral Lines. Edited by G. Gergely, with the Co-operation of G. Forgács, B. Sz0ucs [and] D. Van Phouc written by Gy0orgy Gergely and published by . This book was released on with total page 160 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Physics and Chemistry of Sio2 and the Si-Sio2 Interface by : B. E. Deal
Download or read book The Physics and Chemistry of Sio2 and the Si-Sio2 Interface written by B. E. Deal and published by . This book was released on 2014-01-15 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by : Eric Garfunkel
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
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