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The Preparation And Optical Properties Of Aluminum Gallium Arsenide
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Book Synopsis The Preparation and Optical Properties of Aluminum - Gallium - Arsenide by : Walter Henry Berninger
Download or read book The Preparation and Optical Properties of Aluminum - Gallium - Arsenide written by Walter Henry Berninger and published by . This book was released on 1971 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of the Optical Properties of Aluminum Gallium Arsenide by : Paul John Pearah
Download or read book Characterization of the Optical Properties of Aluminum Gallium Arsenide written by Paul John Pearah and published by . This book was released on 1986 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Properties of Aluminium Gallium Arsenide by : Sadao Adachi
Download or read book Properties of Aluminium Gallium Arsenide written by Sadao Adachi and published by IET. This book was released on 1993 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: The alloy system A1GaAs/GaAs is potentially of great importance for many high-speed electronics and optoelectronic devices, because the lattice parameter difference GaAs and A1GaAs is very small, which promises an insignificant concentration of undesirable interface states. Thanks to this prominent feature, a number of interesting properties and phenomena, such as high-mobility low-dimensional carrier gases, resonant tunnelling and fractional quantum Hall effect, have been found in the A1GaAs/GaAs heterostructure system. New devices, such as modulation-doped FETs, heterojunction bipolar transistors, resonant tunnelling transistors, quantum-well lasers, and other photonic and quantum-effect devices, have also been developed recently using this material system. These areas are recognized as not being the most interesting and active fields in semiconductor physics and device engineering.
Book Synopsis Optical Properties of Gallium Arsenide-Phosphide by :
Download or read book Optical Properties of Gallium Arsenide-Phosphide written by and published by . This book was released on 1966 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces by : Marko Mykola Gregory Slusarczuk
Download or read book Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces written by Marko Mykola Gregory Slusarczuk and published by . This book was released on 1979 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Properties of Gallium Arsenide-phosphide by : George Dee Clark
Download or read book Optical Properties of Gallium Arsenide-phosphide written by George Dee Clark and published by . This book was released on 1966 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of the Optical Properties of Gallium Arsenide as a Function of Pump Intensity Using Picosecond Ultrasonics by : Vimal Deepchand
Download or read book Characterization of the Optical Properties of Gallium Arsenide as a Function of Pump Intensity Using Picosecond Ultrasonics written by Vimal Deepchand and published by . This book was released on 2010 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices by : Daming Huang
Download or read book Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices written by Daming Huang and published by . This book was released on 1990 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.
Book Synopsis Study of Nonlinear Optical Properties of Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Self-assembled Quantum Dots by : Syed Hassan Shah
Download or read book Study of Nonlinear Optical Properties of Indium Arsenide/gallium Arsenide and Indium Gallium Arsenide/gallium Arsenide Self-assembled Quantum Dots written by Syed Hassan Shah and published by ProQuest. This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermodynamic and Optical Properties of Germanium, Silicon, Diamond and Gallium Arsenide by : Atomic Energy of Canada Limited
Download or read book Thermodynamic and Optical Properties of Germanium, Silicon, Diamond and Gallium Arsenide written by Atomic Energy of Canada Limited and published by . This book was released on 1965 with total page 35 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Nonlinear Optical Properties of Gallium Arsenide Pertaining to Terahertz Generation by : Walter C. Hurlbut
Download or read book The Nonlinear Optical Properties of Gallium Arsenide Pertaining to Terahertz Generation written by Walter C. Hurlbut and published by . This book was released on 2008 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium arsenide shows excellent promise for terahertz generation using mid infrared. This is for two reasons. First, the indices of refraction for the terahertz (n[subscript THz]=3.61 at 1 [subscript THz]) and mid infrared (n[subscript opt]=3.431 at 2 [mu]m) are close allowing a long interaction length. Second, the linear absorption is low at terahertz frequencies [alpha][subscript THz]=.5 to 4.5 cm−1 for 1 to 3 [subscript THz]). Since gallium arsenide is a direct bandgap material, multiphoton absorption and nonlinear refraction are issues for efficiency and system design in the mid infrared. In fact, linear absorption makes this material opaque at or below 870 nm. Additionally, two photon absorption is quite pronounced between 870 nm and 1.74 [mu]m. I will present the theory then the experimental data for two and three photon absorption (870 nm to 1.74 [mu]m and 1.74 [mu]m to 2.61 [mu]m, respectively) as well as for nonlinear refraction. The three photon absorption has a minimum at 2 [mu]m in the spectral range of 1.74 to 2.61 [mu]m thus it is the preferred wavelength for terahertz generation. At 2 [mu]m the anisotropy in the three photon absorption was almost 50 %. The nonlinear refraction remains fairly constant in this range as expected. However at 2 [mu]m the anisotropy in nonlinear refraction was only 16% as compared with the predicted factor of 2. Qualitatively, the anisotropic behavior of the nonlinear refraction still conforms to the expected symmetry class of zincblende crystals. Terahertz time domain spectroscopy will be discussed on both theoretical and experimental levels. The results will show that terahertz generation is promising in the mid infrared range for wavelengths 2 [mu]m and above. At 2 [mu]m I demonstrate the advantages of a quasi-phase matched structure. One, the inverting structure generates a narrow band source. Additionally, shaped domains map to the terahertz electric field allowing shaped pulses. Also, of benefit is the increase in power production from having a longer effective interaction path in the crystal.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 464 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide by : Guihua Lu
Download or read book Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide written by Guihua Lu and published by . This book was released on 1988 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis III-V Ternary Semiconducting Compounds-Data Tables by : M. Neuberger
Download or read book III-V Ternary Semiconducting Compounds-Data Tables written by M. Neuberger and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 61 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium-Aluminum-Antimony System.- Gallium-Aluminum-Arsenic System.- Gallium-Aluminum-Phosphorous System.- Gallium-Arsenic-Antimony System.- Gallium-Arsenic-Phosphorous System.- Gallium-Indium-Antimony System.- Gallium-Indium-Arsenic System.- Gallium-Indium-Phosphorous System.- Indium-Arsenic-Antimony System.- Indium-Arsenic-Phosphorous System.
Book Synopsis III–V Semiconducting Compounds by : M. Neuberger
Download or read book III–V Semiconducting Compounds written by M. Neuberger and published by Springer Science & Business Media. This book was released on 2013-03-09 with total page 120 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Electronic Properties Information Center has developed the Data Table as a precis of the most reliable information available for the physical, crystallographic, mechanical, thermal, electronic, magnetic and optical properties of a given material. Data Tables serve as an introduction to the graphic data compilations on the material published by the Electronic Properties Information Center, EPIC, as Data Sheets. Although the Data Sheets are principally concerned, according to the scope of the Center, with electronic and optical data, it is believed that data covering the complete property spectrum is of the first importance to every scientist and engineer, whatever his information requirements. The enthusiastic reception of these Data Tables has confirmed this opinion and increasing requests for this highly selective type of information has resulted in these III·-V Semiconductor Compounds Data Tables. The major problem in this type of selective data compilation on a semiconducting material, lies in the material purity. Properties may vary so widely with doping, crystallinity, defects, geometric forms and the other parameters of preparation, that any attempts at comparison normally fail. On this basis, we have consis tently attempted to give values derived from experiments on the highest purity single crystals or epitaxial films. At the very least, these data should be reproducible and this gives the data their principal validity. If such values however, are not available, then the next best data are reported, together with material speci fications. These latter include the carrier concentration and the dopant.
Book Synopsis Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide by : Qing Lu
Download or read book Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide written by Qing Lu and published by . This book was released on 1989 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Properties of Gallium Arsenide written by and published by INSPEC. This book was released on 1986 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: