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Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 804 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hisham Z. Massoud
Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.3/5 (91 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : B.E. Deal
Publisher : Springer Science & Business Media
ISBN 13 : 1489915885
Total Pages : 505 pages
Book Rating : 4.4/5 (899 download)
Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.
Author : M. Jamal Deen
Publisher : The Electrochemical Society
ISBN 13 : 9781566771375
Total Pages : 610 pages
Book Rating : 4.7/5 (713 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by M. Jamal Deen and published by The Electrochemical Society. This book was released on 1997 with total page 610 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yves J. Chabal
Publisher : Springer Science & Business Media
ISBN 13 : 3642567118
Total Pages : 269 pages
Book Rating : 4.6/5 (425 download)
Download or read book Fundamental Aspects of Silicon Oxidation written by Yves J. Chabal and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 269 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discusses silicon oxidation in a tutorial fashion from both experimental and theoretical viewpoints. The authors report on the state of the art both at Lucent Technology and in academic research. The book will appeal to researchers and advanced students.
Author : Eric Garfunkel
Publisher : Springer Science & Business Media
ISBN 13 : 9401150087
Total Pages : 503 pages
Book Rating : 4.4/5 (11 download)
Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.
Author : Michael Brian Ives
Publisher : The Electrochemical Society
ISBN 13 : 9781566773041
Total Pages : 1000 pages
Book Rating : 4.7/5 (73 download)
Download or read book Passivity of Metals and Semiconductors written by Michael Brian Ives and published by The Electrochemical Society. This book was released on 2001 with total page 1000 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 894 pages
Book Rating : 4.:/5 (31 download)
Download or read book Silicon Materials Science and Technology written by and published by . This book was released on 1998 with total page 894 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Howard R. Huff
Publisher : The Electrochemical Society
ISBN 13 : 9781566773744
Total Pages : 650 pages
Book Rating : 4.7/5 (737 download)
Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Hari Singh Nalwa
Publisher : Academic Press
ISBN 13 : 0080541232
Total Pages : 646 pages
Book Rating : 4.0/5 (85 download)
Download or read book Silicon-Based Material and Devices, Two-Volume Set written by Hari Singh Nalwa and published by Academic Press. This book was released on 2001-06-13 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. Fourteen chapters review the state of the art research on silicon-based materials and their applications to devices. This reference contains a subset of articles published in AP's recently released Handbook of Advanced Electronic and Photonic Materials and Devices ( 2000, ISBN 012-5137451, ten volumes) by Dr. Hari Nalwa. This two-volume work strives to present a highly coherent coverage of silicon-based material uses in the vastly dynamic arena of silicon chip research and technology. Key Features * Covers silicon-based materials and devices * Include types of materials, their processing, fabrication, physical properties and device applications * Role of silicon-based materials in electronic and photonic technology * A very special topic presented in a timely manner and in a format
Author : Harland Tompkins
Publisher : William Andrew
ISBN 13 : 0815517475
Total Pages : 887 pages
Book Rating : 4.8/5 (155 download)
Download or read book Handbook of Ellipsometry written by Harland Tompkins and published by William Andrew. This book was released on 2005-01-06 with total page 887 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Handbook of Ellipsometry is a critical foundation text on an increasingly critical subject. Ellipsometry, a measurement technique based on phase and amplitude changes in polarized light, is becoming popular in a widening array of applications because of increasing miniaturization of integrated circuits and breakthroughs in knowledge of biological macromolecules deriving from DNA and protein surface research. Ellipsometry does not contact or damage samples, and is an ideal measurement technique for determining optical and physical properties of materials at the nano scale. With the acceleration of new instruments and applications now occurring, this book provides an essential foundation for the current science and technology of ellipsometry for scientists and engineers in industry and academia at the forefront of nanotechnology developments in instrumentation, integrated circuits, biotechnology, and pharmaceuticals. Divided into four parts, this comprehensive handbook covers the theory of ellipsometry, instrumentation, applications, and emerging areas. Experts in the field contributed to its twelve chapters, covering various aspects of ellipsometry.
Author : Gianfranco Pacchioni
Publisher : Springer Science & Business Media
ISBN 13 : 9401009449
Total Pages : 619 pages
Book Rating : 4.4/5 (1 download)
Download or read book Defects in SiO2 and Related Dielectrics: Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.
Author : Howard Huff
Publisher : Springer Science & Business Media
ISBN 13 : 3540264620
Total Pages : 723 pages
Book Rating : 4.5/5 (42 download)
Download or read book High Dielectric Constant Materials written by Howard Huff and published by Springer Science & Business Media. This book was released on 2005-11-02 with total page 723 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues relating to the high-K gate dielectric are among the greatest challenges for the evolving International Technology Roadmap for Semiconductors (ITRS). More than just an historical overview, this book will assess previous and present approaches related to scaling the gate dielectric and their impact, along with the creative directions and forthcoming challenges that will define the future of gate dielectric scaling technology.
Author :
Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Electrochemical Society. Meeting
Publisher : The Electrochemical Society
ISBN 13 : 9781566773478
Total Pages : 652 pages
Book Rating : 4.7/5 (734 download)
Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films VII written by Electrochemical Society. Meeting and published by The Electrochemical Society. This book was released on 2003 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Alvin W. Strong
Publisher : John Wiley & Sons
ISBN 13 : 047045525X
Total Pages : 642 pages
Book Rating : 4.4/5 (74 download)
Download or read book Reliability Wearout Mechanisms in Advanced CMOS Technologies written by Alvin W. Strong and published by John Wiley & Sons. This book was released on 2009-10-13 with total page 642 pages. Available in PDF, EPUB and Kindle. Book excerpt: This invaluable resource tells the complete story of failure mechanisms—from basic concepts to the tools necessary to conduct reliability tests and analyze the results. Both a text and a reference work for this important area of semiconductor technology, it assumes no reliability education or experience. It also offers the first reference book with all relevant physics, equations, and step-by-step procedures for CMOS technology reliability in one place. Practical appendices provide basic experimental procedures that include experiment design, performing stressing in the laboratory, data analysis, reliability projections, and interpreting projections.
