The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2

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Publisher : Springer Science & Business Media
ISBN 13 : 1489915885
Total Pages : 505 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 by : B.E. Deal

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2 written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first international symposium on the subject "The Physics and Chemistry of Si02 and the Si-Si02 Interface," organized in association with the Electrochemical Society, Inc. , was held in Atlanta, Georgia on May 15- 20, 1988. This symposium contained sixty papers and was so successful that the sponsoring divisions decided to schedule it on a regular basis every four years. Thus, the second symposium on "The Physics and Chemistry of Si02 and the Si02 Interface was held May 18-21, 1992 in St. Louis, Missouri, again sponsored by the Electronics and Dielectrics Science and Technology Divisions of The Electrochemical Society. This volume contains manuscripts of most of the fifty nine papers presented at the 1992 symposium, and is divided into eight chapters - approximating the organization of the symposium. Each chapter is preceded with an introduction by the session organizers. It is appropriate to provide a general assessment of the current status and understanding of the physics and chemistry of Si02 and the Si02 interface before proceeding with a brief overview of the individual chapters. Semiconductor devices have continued to scale down in both horizontal and vertical dimensions. This has resulted in thinner gate and field oxides as well as much closer spacing of individual device features. As a result, surface condition, native oxide composition, and cleaning and impurity effects now provide a much more significant contribution to the properties of oxides and their interfaces.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996

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Publisher :
ISBN 13 :
Total Pages : 804 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 by : Hisham Z. Massoud

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface-3, 1996 written by Hisham Z. Massoud and published by . This book was released on 1996 with total page 804 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000

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Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 by : Hisham Z. Massoud

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--4, 2000 written by Hisham Z. Massoud and published by . This book was released on 2000 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics and Chemistry of Sio2 and the Si-Sio2 Interface

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Publisher :
ISBN 13 : 9781489907752
Total Pages : 572 pages
Book Rating : 4.9/5 (77 download)

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Book Synopsis The Physics and Chemistry of Sio2 and the Si-Sio2 Interface by : B. E. Deal

Download or read book The Physics and Chemistry of Sio2 and the Si-Sio2 Interface written by B. E. Deal and published by . This book was released on 2014-01-15 with total page 572 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5

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Author :
Publisher : ECS Transactions
ISBN 13 : 9781566774307
Total Pages : 304 pages
Book Rating : 4.7/5 (743 download)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5 by : Hisham Z. Massoud

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface--5 written by Hisham Z. Massoud and published by ECS Transactions. This book was released on 2005-01-01 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue of ECS Transactions places a focus on ultrathin gate dielectrics: novel technologies, characterization methods, process modeling, fundamental limits, and projections for scaling the gate oxide thickness.

The Physics of SiO2 and Its Interfaces

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Publisher : Elsevier
ISBN 13 : 148313900X
Total Pages : 501 pages
Book Rating : 4.4/5 (831 download)

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Book Synopsis The Physics of SiO2 and Its Interfaces by : Sokrates T. Pantelides

Download or read book The Physics of SiO2 and Its Interfaces written by Sokrates T. Pantelides and published by Elsevier. This book was released on 2013-09-17 with total page 501 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Physics of SiO2 and Its Interfaces covers the proceedings of the International Topical Conference on the Physics of SiO2 and its Interfaces, held at the IBM Thomas J. Watson Research Center, Yorktown Heights, New York on March 22-24, 1978. The book focuses on the properties, reactions, transformations, and structures of silicon dioxide (SiO2). The selection first discusses the electronic properties of vitreous SiO2 and small polaron formation and motion of holes in a-SiO2. Discussions focus on mobility edges and polarons, deep states in the gap, and excitons. The text also ponders on field-dependent hole and exciton transport in SiO2 and electron emission from SiO2 into vacuum. The publication takes a look at the electronic structures of crystalline and amorphous SiO2; band structures and electronic properties of SiO2; and optical absorption spectrum of SiO2. The text also tackles chemical bond and related properties of SiO2; topological effects on the band structure of silica; and properties of localized SiO2 clusters in layers of disordered silicon on silver. The selection is a good reference for physicists and readers interested in the physics of silicon dioxide.

The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

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Publisher : Springer Science & Business Media
ISBN 13 : 1489907742
Total Pages : 543 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : B.E. Deal

Download or read book The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by B.E. Deal and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 543 pages. Available in PDF, EPUB and Kindle. Book excerpt: The properties of Si02 and the Si-Si02 interface provide the key foundation onto which the majority of semiconductor device technology has been built Their study has consumed countless hours of many hundreds of investigators over the years, not only in the field of semiconductor devices but also in ceramics, materials science, metallurgy, geology, and mineralogy, to name a few. These groups seldom have contact with each other even though they often investigate quite similar aspects of the Si02 system. Desiring to facilitate an interaction between these groups we set out to organize a symposium on the Physics and Chemistry of Si()z and the Si-Si()z Interface under the auspices of The Electrochemical Society, which represents a number of the appropriate groups. This symposium was held at the 173rd Meeting of The Electrochemical Society in Atlanta, Georgia, May 15-20, 1988. These dates nearly coincided with the ten year anniversary of the "International Topical Conference on the Physics of Si02 and its Interfaces" held at mM in 1978. We have modeled the present symposium after the 1978 conference as well as its follow on at North Carolina State in 1980. Of course, much progress has been made in that ten years and the symposium has given us the opportunity to take a multidisciplinary look at that progress.

The Si-SiO2 System

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Publisher : Elsevier Publishing Company
ISBN 13 :
Total Pages : 376 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis The Si-SiO2 System by : P. Balk

Download or read book The Si-SiO2 System written by P. Balk and published by Elsevier Publishing Company. This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Si-SiO 2 system has been the subject of concentrated research for over 25 years, particularly because of its key role in silicon integrated circuits. However, only a few comprehensive treatises on this field have been published in recent years. This book focuses on the materials science and technology aspects of the system. Its aim is to give a comprehensive overview of the topic, including an extensive list of references giving easy access to the literature. After an introductory chapter which reviews the Si-SiO 2 system from the perspective of other semiconductor-insulator combinations of technical interest, the technology of oxide preparation is discussed. Fundamental questions regarding the structure and chemistry of the interfacial region are then addressed. Two chapters are concerned with system properties: one deals with the physico-chemical, electrical and device-related characteristics and the way these are affected by the technology of oxide preparation; a second chapter focuses on point defects and charge trapping. The book concludes with a broad review of the techniques available for electrical characterization of the system, including the physical background.

The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (314 download)

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Book Synopsis The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface by :

Download or read book The Physics and Chemistry of SiO 2 and the Si-SiO 2 Interface written by and published by . This book was released on 19?? with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface

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Publisher :
ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (227 download)

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Book Synopsis Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface by : E. A. Irene

Download or read book Silicon Oxidation Studies: A Review of Recent Studies on Thin Film Silicon Dioxide Formation in The Physics and Chemistry of SiO2 and the Si-SiO2 Interface written by E. A. Irene and published by . This book was released on 1988 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: The formation of the thin silicon dioxide (SiO2) films via thermal oxidation on single crystal silicon substrates has been found to depend on the method of Si cleaning, impurities on the Si surface, the Si crystal orientation, film stress, and the availability of electrons at the Si surface. Recent studies on these topics are recounted along with a framework for understanding. No fully acceptable model for thin Si02 formation yet exists, but recent studies lead in new directions towards this goal.

Semiconductor Silicon 2002

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Publisher : The Electrochemical Society
ISBN 13 : 9781566773744
Total Pages : 650 pages
Book Rating : 4.7/5 (737 download)

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Book Synopsis Semiconductor Silicon 2002 by : Howard R. Huff

Download or read book Semiconductor Silicon 2002 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 2002 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 9401150087
Total Pages : 503 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by : Eric Garfunkel

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 503 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films

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Publisher : The Electrochemical Society
ISBN 13 : 9781566770484
Total Pages : 644 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films by : Vikram J. Kapoor

Download or read book Proceedings of the Third Symposium on Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Vikram J. Kapoor and published by The Electrochemical Society. This book was released on 1994 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon Nitride and Silicon Dioxide Thin Insulating Films

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Publisher :
ISBN 13 :
Total Pages : 306 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by :

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by and published by . This book was released on 1999 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Based Material and Devices, Two-Volume Set

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Publisher : Academic Press
ISBN 13 : 0080541232
Total Pages : 646 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Silicon-Based Material and Devices, Two-Volume Set by : Hari Singh Nalwa

Download or read book Silicon-Based Material and Devices, Two-Volume Set written by Hari Singh Nalwa and published by Academic Press. This book was released on 2001-06-13 with total page 646 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers a broad spectrum of the silicon-based materials and their device applications. This book provides a broad coverage of the silicon-based materials including different kinds of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. This two-volume set offers a selection of timely topics on silicon materials namely those that have been extensively used for applications in electronic and photonic technologies. The extensive reference provides broad coverage of silicon-based materials, including different types of silicon-related materials, their processing, spectroscopic characterization, physical properties, and device applications. Fourteen chapters review the state of the art research on silicon-based materials and their applications to devices. This reference contains a subset of articles published in AP's recently released Handbook of Advanced Electronic and Photonic Materials and Devices ( 2000, ISBN 012-5137451, ten volumes) by Dr. Hari Nalwa. This two-volume work strives to present a highly coherent coverage of silicon-based material uses in the vastly dynamic arena of silicon chip research and technology. Key Features * Covers silicon-based materials and devices * Include types of materials, their processing, fabrication, physical properties and device applications * Role of silicon-based materials in electronic and photonic technology * A very special topic presented in a timely manner and in a format

Defects in SiO2 and Related Dielectrics: Science and Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 9401009449
Total Pages : 619 pages
Book Rating : 4.4/5 (1 download)

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Book Synopsis Defects in SiO2 and Related Dielectrics: Science and Technology by : Gianfranco Pacchioni

Download or read book Defects in SiO2 and Related Dielectrics: Science and Technology written by Gianfranco Pacchioni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 619 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon dioxide plays a central role in most contemporary electronic and photonic technologies, from fiber optics for communications and medical applications to metal-oxide-semiconductor devices. Many of these applications directly involve point defects, which can either be introduced during the manufacturing process or by exposure to ionizing radiation. They can also be deliberately created to exploit new technologies. This book provides a general description of the influence that point defects have on the global properties of the bulk material and their spectroscopic characterization through ESR and optical spectroscopy.

Silicon Nitride and Silicon Dioxide Thin Insulating Films

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Publisher : The Electrochemical Society
ISBN 13 : 9781566773133
Total Pages : 304 pages
Book Rating : 4.7/5 (731 download)

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Book Synopsis Silicon Nitride and Silicon Dioxide Thin Insulating Films by : Electrochemical Society. Dielectric Science and Technology Division

Download or read book Silicon Nitride and Silicon Dioxide Thin Insulating Films written by Electrochemical Society. Dielectric Science and Technology Division and published by The Electrochemical Society. This book was released on 2001 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: