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The Optical Properties Of Non Square Quantum Wells With Applications To Optoelectronic Devices
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Book Synopsis The Optical Properties of Non-square Quantum Wells with Applications to Optoelectronic Devices by : Eddie Herbert Li
Download or read book The Optical Properties of Non-square Quantum Wells with Applications to Optoelectronic Devices written by Eddie Herbert Li and published by . This book was released on 1992 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Strained-Layer Quantum Wells and Their Applications by : M. O. Manasreh
Download or read book Strained-Layer Quantum Wells and Their Applications written by M. O. Manasreh and published by CRC Press. This book was released on 1997-12-23 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor devices based on lattice mismatched heterostructures have been the subject of much study. This volume focuses on the physics, technology and applications of strained layer quantum wells and superlattices, featuring chapters on aspects ranging from theoretical modeling of quantum-well lasers to materials characterization and assessment by the most prominent researchers in the field. It is an essential reference for both researchers and students of semiconductor lasers, sensors and communications.
Book Synopsis Physics of Quantum Well Devices by : B.R. Nag
Download or read book Physics of Quantum Well Devices written by B.R. Nag and published by Springer Science & Business Media. This book was released on 2006-04-11 with total page 309 pages. Available in PDF, EPUB and Kindle. Book excerpt: Quantum well devices have been the objects of intensive research during the last two decades. Some of the devices have matured into commercially useful products and form part of modern electronic circuits. Some others require further dev- opment, but have the promise of being useful commercially in the near future. Study of the devices is, therefore, gradually becoming compulsory for electronics specialists. The functioning of the devices, however, involve aspects of physics which are not dealt with in the available text books on the physics of semicond- tor devices. There is, therefore, a need for a book to cover all these aspects at an introductory level. The present book has been written with the aim of meeting this need. In fact, the book grew out of introductory lectures given by the author to graduate students and researchers interested in this rapidly developing area of electron devices. The book covers the subjects of heterostructure growth techniques, band-offset theory and experiments, electron states, electron-photon interaction and related phenomena, electron transport and the operation of electronic, opto-electronic and photonic quantum well devices. The theory as well as the practical aspects of the devices are discussed at length. The aim of the book is to provide a comprehensive treatment of the physics underlying the various devices. A reader after going through the book should find himself equipped to deal with all kinds of quantum well devices.
Book Synopsis INVESTIGATION OF OPTICAL PROPERTIES OF QUANTUM WELLS FOR OPTOELECTRONIC DEVICE APPLICATIONS. by : NACER DEBBAR
Download or read book INVESTIGATION OF OPTICAL PROPERTIES OF QUANTUM WELLS FOR OPTOELECTRONIC DEVICE APPLICATIONS. written by NACER DEBBAR and published by . This book was released on 1989 with total page 169 pages. Available in PDF, EPUB and Kindle. Book excerpt: potential device applications.
Book Synopsis Nanoelectronic Devices and Applications by : Trupti Ranjan Lenka
Download or read book Nanoelectronic Devices and Applications written by Trupti Ranjan Lenka and published by Bentham Science Publishers. This book was released on 2024-07-02 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics.
Book Synopsis Properties of III-V Quantum Wells and Superlattices by : P. K. Bhattacharya
Download or read book Properties of III-V Quantum Wells and Superlattices written by P. K. Bhattacharya and published by IET. This book was released on 1996 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: A finely-structured, state-of-the-art review on controlled building of atomic-scale mutilayers, where nanometric structures based on III-V semiconductors have attracted particular attention.
Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 712 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure
Book Synopsis Nonlinear Optical Properties of Semiconductor Quantum Wells with Opto-electronic Applications by : Adriaan Jan Sengers
Download or read book Nonlinear Optical Properties of Semiconductor Quantum Wells with Opto-electronic Applications written by Adriaan Jan Sengers and published by . This book was released on 1996 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Quantum Well Intermixing by : J. T. Lie
Download or read book Semiconductor Quantum Well Intermixing written by J. T. Lie and published by CRC Press. This book was released on 2000-01-18 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Quantum Well Intermixing is an international collection of research results dealing with several aspects of the diffused quantum well (DFQW), ranging from Physics to materials and device applications. The material covered is the basic interdiffusion mechanisms of both cation and anion groups as well as the properties of band structure modifiations. Its comprehensive coverage of growth and pos-growth processing technologies along with its presentation of the various interesting and advanced features of the DFQW materials make this book an essential reference to the study of QW layer intermixing.
Download or read book Research in Progress written by and published by . This book was released on 1992 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Properties of Si1x̳Gex̳/Si Quantum Wells and Superlattices for Device Applications by : Jin Suk Park
Download or read book Optical Properties of Si1x̳Gex̳/Si Quantum Wells and Superlattices for Device Applications written by Jin Suk Park and published by . This book was released on 1992 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis OPTICAL PROPERTIES OF INTERMIX by : 李秀文
Download or read book OPTICAL PROPERTIES OF INTERMIX written by 李秀文 and published by Open Dissertation Press. This book was released on 2017-01-27 with total page 226 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Optical Properties of Intermixed Quantum Wells and Its Application in Photodetectors" by 李秀文, Siew-wan, Alex, Lee, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. DOI: 10.5353/th_b3123883 Subjects: Quantum wells Semiconductors - Optical properties Photoelectronic devices
Book Synopsis Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics by : Alfred R. Adams
Download or read book Quantum Wells and Superlattices in Optoelectronic Devices and Integrated Optics written by Alfred R. Adams and published by . This book was released on 1987 with total page 150 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors by : H. Q. Hou
Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Devices by : Sheng S. Li
Download or read book Intersubband Transitions in Quantum Wells: Physics and Devices written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 221 pages. Available in PDF, EPUB and Kindle. Book excerpt: The International Workshop on "Intersubband Transitions in Quantum Wells:: Physics and Applications," was held at National Cheng Kung University, in Tainan, Taiwan, December 15-18, 1997. The objective of the Workshop is to facilitate the presentation and discussion of the recent results in theoretical, experimental, and applied aspects of intersubband transitions in quantum wells and dots. The program followed the tradition initiated at the 1991 conference in Cargese-France, the 1993 conference in Whistler, B. C. Canada, and the 1995 conference in Kibbutz Ginosar, Israel. Intersubband transitions in quantum wells and quantum dots have attracted considerable attention in recent years, mainly due to the promise of various applications in the mid- and far-infrared regions (2-30 J. lm). Over 40 invited and contributed papers were presented in this four-day workshop, with topics covered most aspects of the intersubband transition phenomena including: the basic intersubband transition processes, multiquantum well infrared photodetector (QWIP) physics, large format (640x480) GaAs QWIP (with 9. 0 J. lffi cutoff) focal plane arrays (FPAs) for IR imaging camera applications, infrared modulation, intersubband emission including mid- and long- wavelength quantum cascade (QC) lasers such as short (A. "" 3. 4 J. lm) and long (A. "" 11. 5 J. lm) wavelength room temperature QC lasers, quantum fountain intersubband laser at 15. 5 J. lm wavelength in GaAs/AIGaAs quantum well, harmonic generation and nonlinear effects, ultra-fast phenomena such as terahertz (THz) intersubband emission and detection. The book divides into five Chapters.
Book Synopsis Optical Properties of Intermixed Quantum Wells and Its Application in Photodetectors by : Siew-wan Lee (Alex)
Download or read book Optical Properties of Intermixed Quantum Wells and Its Application in Photodetectors written by Siew-wan Lee (Alex) and published by . This book was released on 1999 with total page 410 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Properties of Quantum Wells Composed of All-Binary InAs/GaAs Short-Period Superlattices by : Martin D. Dawson
Download or read book Optical Properties of Quantum Wells Composed of All-Binary InAs/GaAs Short-Period Superlattices written by Martin D. Dawson and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strained alloy InGaAs/GaAs multiple quantum well structures (MQWs), on GaAs substrates, are being investigated' for use in optical modulators, low-threshold diode lasers, photodetectors and other opto-electronic devices operating near 1 um. Attempts are being made to cover the 0.9-1.1 am spectral range by varying well-widths and/or alloy mole-fraction and by growing such structures on superlattice or alloy buffer layers. Special problems, however, are posed in growing these strained ternary alloy quantum wells with high quality by epitaxial techniques. Alloy concentration is difficult to reproduce, and alloy-disorder introduces an additional line-broadening contribution and non-uniformity into the materials. The critical thickness parameter places an upper limit on the indium mole-fraction (and thereby the strain) for growth directly on GaAs, restricting the flexibility in varying the well width for increased spectral coverage. Typically, this mole-fraction must be less than 0.2, and the lattice-parameter mismatch below 2%, for well-widths -10 nm. Here, we focus on structures in which each quantum well consists of an ordered InAs/GaAs short-period superlattice as an attractive alternative to the random InGaAs alloy structures. These all-binary MQWs are highly-strained (7% lattice parameter mismatch) and can accommodate high average indium mole-fraction (30-40%) in wide wells (10-20 nm) without evidence of strain relaxation due to misfit dislocation formation.
