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The Monte Carlo Method For Semiconductor Device Simulation
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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni
Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 1989-10-30 with total page 382 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni
Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.
Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue
Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.
Author :Christoph Jungemann Publisher :Springer Science & Business Media ISBN 13 :9783211013618 Total Pages :282 pages Book Rating :4.0/5 (136 download)
Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann
Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2003-06-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.
Book Synopsis Introduction to Semiconductor Device Modelling by : Christopher M. Snowden
Download or read book Introduction to Semiconductor Device Modelling written by Christopher M. Snowden and published by World Scientific. This book was released on 1998 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book deals mainly with physical device models which are developed from the carrier transport physics and device geometry considerations. The text concentrates on silicon and gallium arsenide devices and includes models of silicon bipolar junction transistors, junction field effect transistors (JFETs), MESFETs, silicon and GaAs MESFETs, transferred electron devices, pn junction diodes and Schottky varactor diodes. The modelling techniques of more recent devices such as the heterojunction bipolar transistors (HBT) and the high electron mobility transistors are discussed. This book contains details of models for both equilibrium and non-equilibrium transport conditions. The modelling Technique of Small-scale devices is discussed and techniques applicable to submicron-dimensioned devices are included. A section on modern quantum transport analysis techniques is included. Details of essential numerical schemes are given and a variety of device models are used to illustrate the application of these techniques in various fields.
Book Synopsis Computational Electronics by : Dragica Vasileska
Download or read book Computational Electronics written by Dragica Vasileska and published by CRC Press. This book was released on 2017-12-19 with total page 782 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.
Book Synopsis Semiconductor Transport by : David Ferry
Download or read book Semiconductor Transport written by David Ferry and published by CRC Press. This book was released on 2016-08-12 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: The information revolution would have been radically different, or impossible, without the use of the materials known generically as semiconductors. The properties of these materials, particularly the potential for doping with impurities to create transistors and diodes and controlling the local potential by gates, are essential for microelectronics. Semiconductor Transport is an introductory text on electron transport in semiconductor materials and is written for advanced undergraduates and graduate students. The book provides a thorough treatment of modern approaches to the transport properties of semiconductors and their calculation. It also introduces those aspects of solid state physics, which are vitally important for understanding transport in them.
Book Synopsis Handbook of Optoelectronic Device Modeling and Simulation by : Joachim Piprek
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-12 with total page 887 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. Gives a broad overview of concepts with concise explanations illustrated by real results. Compares different levels of modeling, from simple analytical models to complex numerical models. Discusses practical methods of model validation. Includes an overview of numerical techniques.
Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Author :Christopher M. Snowden Publisher :Springer Science & Business Media ISBN 13 :1447120485 Total Pages :295 pages Book Rating :4.4/5 (471 download)
Book Synopsis Compound Semiconductor Device Modelling by : Christopher M. Snowden
Download or read book Compound Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound semiconductor devices form the foundation of solid-state microwave and optoelectronic technologies used in many modern communication systems. In common with their low frequency counterparts, these devices are often represented using equivalent circuit models, but it is often necessary to resort to physical models in order to gain insight into the detailed operation of compound semiconductor devices. Many of the earliest physical models were indeed developed to understand the 'unusual' phenomena which occur at high frequencies. Such was the case with the Gunn and IMPATI diodes, which led to an increased interest in using numerical simulation methods. Contemporary devices often have feature sizes so small that they no longer operate within the familiar traditional framework, and hot electron or even quantum mechanical models are required. The need for accurate and efficient models suitable for computer aided design has increased with the demand for a wider range of integrated devices for operation at microwave, millimetre and optical frequencies. The apparent complexity of equivalent circuit and physics-based models distinguishes high frequency devices from their low frequency counterparts . . Over the past twenty years a wide range of modelling techniques have emerged suitable for describing the operation of compound semiconductor devices. This book brings together for the first time the most popular techniques in everyday use by engineers and scientists. The book specifically addresses the requirements and techniques suitable for modelling GaAs, InP. ternary and quaternary semiconductor devices found in modern technology.
Book Synopsis POWER/HVMOS Devices Compact Modeling by : Wladyslaw Grabinski
Download or read book POWER/HVMOS Devices Compact Modeling written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2010-07-20 with total page 210 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor power electronics plays a dominant role due its increased efficiency and high reliability in various domains including the medium and high electrical drives, automotive and aircraft applications, electrical power conversion, etc. Power/HVMOS Devices Compact Modeling will cover very extensive range of topics related to the development and characterization power/high voltage (HV) semiconductor technologies as well as modeling and simulations of the power/HV devices and smart power integrated circuits (ICs). Emphasis is placed on the practical applications of the advanced semiconductor technologies and the device level compact/spice modeling. This book is intended to provide reference information by selected, leading authorities in their domain of expertise. They are representing both academia and industry. All of them have been chosen because of their intimate knowledge of their subjects as well as their ability to present them in an easily understandable manner.
Book Synopsis 3D TCAD Simulation for CMOS Nanoeletronic Devices by : Yung-Chun Wu
Download or read book 3D TCAD Simulation for CMOS Nanoeletronic Devices written by Yung-Chun Wu and published by Springer. This book was released on 2017-06-19 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates how to use the Synopsys Sentaurus TCAD 2014 version for the design and simulation of 3D CMOS (complementary metal–oxide–semiconductor) semiconductor nanoelectronic devices, while also providing selected source codes (Technology Computer-Aided Design, TCAD). Instead of the built-in examples of Sentaurus TCAD 2014, the practical cases presented here, based on years of teaching and research experience, are used to interpret and analyze simulation results of the physical and electrical properties of designed 3D CMOSFET (metal–oxide–semiconductor field-effect transistor) nanoelectronic devices. The book also addresses in detail the fundamental theory of advanced semiconductor device design for the further simulation and analysis of electric and physical properties of semiconductor devices. The design and simulation technologies for nano-semiconductor devices explored here are more practical in nature and representative of the semiconductor industry, and as such can promote the development of pioneering semiconductor devices, semiconductor device physics, and more practically-oriented approaches to teaching and learning semiconductor engineering. The book can be used for graduate and senior undergraduate students alike, while also offering a reference guide for engineers and experts in the semiconductor industry. Readers are expected to have some preliminary knowledge of the field.
Book Synopsis Theory of Electron Transport in Semiconductors by : Carlo Jacoboni
Download or read book Theory of Electron Transport in Semiconductors written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2010-09-05 with total page 590 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book originated out of a desire to provide students with an instrument which might lead them from knowledge of elementary classical and quantum physics to moderntheoreticaltechniques for the analysisof electrontransport in semiconductors. The book is basically a textbook for students of physics, material science, and electronics. Rather than a monograph on detailed advanced research in a speci?c area, it intends to introduce the reader to the fascinating ?eld of electron dynamics in semiconductors, a ?eld that, through its applications to electronics, greatly contributed to the transformationof all our lives in the second half of the twentieth century, and continues to provide surprises and new challenges. The ?eld is so extensive that it has been necessary to leave aside many subjects, while others could be dealt with only in terms of their basic principles. The book is divided into ?ve major parts. Part I moves from a survey of the fundamentals of classical and quantum physics to a brief review of basic semiconductor physics. Its purpose is to establish a common platform of language and symbols, and to make the entire treatment, as far as pos- ble, self-contained. Parts II and III, respectively, develop transport theory in bulk semiconductors in semiclassical and quantum frames. Part IV is devoted to semiconductor structures, including devices and mesoscopic coherent s- tems. Finally, Part V develops the basic theoretical tools of transport theory within the modern nonequilibrium Green-function formulation, starting from an introduction to second-quantization formalism.
Book Synopsis 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics by : Simon Li
Download or read book 3D TCAD Simulation for Semiconductor Processes, Devices and Optoelectronics written by Simon Li and published by Springer Science & Business Media. This book was released on 2011-10-01 with total page 303 pages. Available in PDF, EPUB and Kindle. Book excerpt: Technology computer-aided design, or TCAD, is critical to today’s semiconductor technology and anybody working in this industry needs to know something about TCAD. This book is about how to use computer software to manufacture and test virtually semiconductor devices in 3D. It brings to life the topic of semiconductor device physics, with a hands-on, tutorial approach that de-emphasizes abstract physics and equations and emphasizes real practice and extensive illustrations. Coverage includes a comprehensive library of devices, representing the state of the art technology, such as SuperJunction LDMOS, GaN LED devices, etc.
Book Synopsis Analog Design and Simulation Using OrCAD Capture and PSpice by : Dennis Fitzpatrick
Download or read book Analog Design and Simulation Using OrCAD Capture and PSpice written by Dennis Fitzpatrick and published by Elsevier. This book was released on 2011-11-16 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: Anyone involved in circuit design that needs the practical know-how it takes to design a successful circuit or product, will find this practical guide to using Capture-PSpice (written by a former Cadence PSpice expert for Europe) an essential book. The text delivers step-by-step guidance on using Capture-PSpice to help professionals produce reliable, effective designs. Readers will learn how to get up and running quickly and efficiently with industry standard software and in sufficient detail to enable building upon personal experience to avoid common errors and pit-falls. This book is of great benefit to professional electronics design engineers, advanced amateur electronics designers, electronic engineering students and academic staff looking for a book with a real-world design outlook. Provides both a comprehensive user guide, and a detailed overview of simulation Each chapter has worked and ready to try sample designs and provides a wide range of to-do exercises Core skills are developed using a running case study circuit Covers Capture and PSpice together for the first time.
Book Synopsis The Wigner Monte Carlo Method for Nanoelectronic Devices by : Damien Querlioz
Download or read book The Wigner Monte Carlo Method for Nanoelectronic Devices written by Damien Querlioz and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.
Book Synopsis World Scientific Reference of Hybrid Materials by :
Download or read book World Scientific Reference of Hybrid Materials written by and published by . This book was released on 2019 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt: "The World Scientific Reference of Hybrid Materials is a set of 3 volumes, which covers the fascinating area of materials science at the intersection between purely polymeric, organic or inorganic materials. The rapidly developing research on hybrid materials is largely driven by the steadily increasing need of multifunctional materials in various branches of technology. However, much of the research is also driven by the curiosity of the researchers and the long lasting wish to merge the most beneficial properties of the various materials into one. The flexibility of polymers could, for example, be merged with the electronic conductivity of metals or the mechanical resistance of ceramics, which will be of great value for the industries. This reference covers the areas of synthesis of such hybrid materials, which take benefit from each of the consisting ingredients, and overviews some of the emerging applications based on the materials. Much of the current research is still in its infancy, but hybrid materials are already now considered to be the key enabler for important future developments, for example flexible electronics. With this perspective, this reference aims at giving the general public an overview over the topics of relevance in this field, but also attracting new researchers to this intriguing scientific area."-
