The Formation Of Structural Imperfections In Semiconductor Silicon

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The Formation of Structural Imperfections in Semiconductor Silicon

Author : V. I. Talanin
Publisher : Cambridge Scholars Publishing
ISBN 13 : 152752342X
Total Pages : 281 pages
Book Rating : 4.5/5 (275 download)

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Book Synopsis The Formation of Structural Imperfections in Semiconductor Silicon by : V. I. Talanin

Download or read book The Formation of Structural Imperfections in Semiconductor Silicon written by V. I. Talanin and published by Cambridge Scholars Publishing. This book was released on 2018-12-14 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.

Charged Semiconductor Defects

Author : Edmund G. Seebauer
Publisher : Springer Science & Business Media
ISBN 13 : 1848820593
Total Pages : 304 pages
Book Rating : 4.8/5 (488 download)

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Book Synopsis Charged Semiconductor Defects by : Edmund G. Seebauer

Download or read book Charged Semiconductor Defects written by Edmund G. Seebauer and published by Springer Science & Business Media. This book was released on 2008-11-14 with total page 304 pages. Available in PDF, EPUB and Kindle. Book excerpt: Defects in semiconductors have been studied for many years, in many cases with a view toward controlling their behaviour through various forms of “defect engineering”. For example, in the bulk, charging significantly affects the total concentration of defects that are available to mediate phenomena such as solid-state diffusion. Surface defects play an important role in mediating surface mass transport during high temperature processing steps such as epitaxial film deposition, diffusional smoothing in reflow, and nanostructure formation in memory device fabrication. “Charged Defects in Semiconductors” details the current state of knowledge regarding the properties of the ionized defects that can affect the behaviour of advanced transistors, photo-active devices, catalysts, and sensors. Features: group IV, III-V, and oxide semiconductors; intrinsic and extrinsic defects; and, point defects, as well as defect pairs, complexes and clusters.

Imperfections and Impurities in Semiconductor Silicon

Author : K. V. Ravi
Publisher : John Wiley & Sons
ISBN 13 :
Total Pages : 408 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Imperfections and Impurities in Semiconductor Silicon by : K. V. Ravi

Download or read book Imperfections and Impurities in Semiconductor Silicon written by K. V. Ravi and published by John Wiley & Sons. This book was released on 1981 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt:

ICCGE-19/OMVPE-19 Program and Abstracts eBook

Author : ICCGE-19/OMVPE-19/AACG
Publisher : CTI Meeting Technology
ISBN 13 : 0463615832
Total Pages : 940 pages
Book Rating : 4.4/5 (636 download)

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Book Synopsis ICCGE-19/OMVPE-19 Program and Abstracts eBook by : ICCGE-19/OMVPE-19/AACG

Download or read book ICCGE-19/OMVPE-19 Program and Abstracts eBook written by ICCGE-19/OMVPE-19/AACG and published by CTI Meeting Technology. This book was released on 2019-07-11 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt: A collection of abstracts for the 19th International Conference on Crystal Growth and Epitaxy (ICCGE-19) to be held jointly with the 19th US Biennial Workshop on Organometallic Vapor Phase Epitaxy (OMVPE-19) and the 17th International Summer School on Crystal Growth (ISSCG-17).

Proceedings of the Second Symposium on Defects in Silicon

Author : W. Murray Bullis
Publisher :
ISBN 13 :
Total Pages : 716 pages
Book Rating : 4.:/5 (44 download)

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Book Synopsis Proceedings of the Second Symposium on Defects in Silicon by : W. Murray Bullis

Download or read book Proceedings of the Second Symposium on Defects in Silicon written by W. Murray Bullis and published by . This book was released on 1991 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt:

New Research on Silicon

Author : Vitalyi Igorevich Talanin
Publisher : BoD – Books on Demand
ISBN 13 : 9535131591
Total Pages : 306 pages
Book Rating : 4.5/5 (351 download)

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Book Synopsis New Research on Silicon by : Vitalyi Igorevich Talanin

Download or read book New Research on Silicon written by Vitalyi Igorevich Talanin and published by BoD – Books on Demand. This book was released on 2017-05-31 with total page 306 pages. Available in PDF, EPUB and Kindle. Book excerpt: The knowledge of fundamental silicon questions and all aspects of silicon technology gives the possibility of improvement to both initial silicon material and devices on silicon basis. The articles for this book have been contributed by the much respected researchers in this area and cover the most recent developments and applications of silicon technology and some fundamental questions. This book provides the latest research developments in important aspects of silicon including nanoclusters, solar silicon, porous silicon, some technological processes, and silicon devices and also fundamental question about silicon structural perfection. This book is of interest both to fundamental research and to practicing scientists and also will be useful to all engineers and students in industry and academia.

Defects and Impurities in Silicon Materials

Author : Yutaka Yoshida
Publisher : Springer
ISBN 13 : 4431558004
Total Pages : 498 pages
Book Rating : 4.4/5 (315 download)

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Book Synopsis Defects and Impurities in Silicon Materials by : Yutaka Yoshida

Download or read book Defects and Impurities in Silicon Materials written by Yutaka Yoshida and published by Springer. This book was released on 2016-03-30 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book emphasizes the importance of the fascinating atomistic insights into the defects and the impurities as well as the dynamic behaviors in silicon materials, which have become more directly accessible over the past 20 years. Such progress has been made possible by newly developed experimental methods, first principle theories, and computer simulation techniques. The book is aimed at young researchers, scientists, and technicians in related industries. The main purposes are to provide readers with 1) the basic physics behind defects in silicon materials, 2) the atomistic modeling as well as the characterization techniques related to defects and impurities in silicon materials, and 3) an overview of the wide range of the research fields involved.

Handbook of Silicon Based MEMS Materials and Technologies

Author : Markku Tilli
Publisher : Elsevier
ISBN 13 : 012817787X
Total Pages : 1028 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Handbook of Silicon Based MEMS Materials and Technologies by : Markku Tilli

Download or read book Handbook of Silicon Based MEMS Materials and Technologies written by Markku Tilli and published by Elsevier. This book was released on 2020-04-17 with total page 1028 pages. Available in PDF, EPUB and Kindle. Book excerpt: Handbook of Silicon Based MEMS Materials and Technologies, Third Edition is a comprehensive guide to MEMS materials, technologies, and manufacturing with a particular emphasis on silicon as the most important starting material used in MEMS. The book explains the fundamentals, properties (mechanical, electrostatic, optical, etc.), materials selection, preparation, modeling, manufacturing, processing, system integration, measurement, and materials characterization techniques of MEMS structures. The third edition of this book provides an important up-to-date overview of the current and emerging technologies in MEMS making it a key reference for MEMS professionals, engineers, and researchers alike, and at the same time an essential education material for undergraduate and graduate students. Provides comprehensive overview of leading-edge MEMS manufacturing technologies through the supply chain from silicon ingot growth to device fabrication and integration with sensor/actuator controlling circuits Explains the properties, manufacturing, processing, measuring and modeling methods of MEMS structures Reviews the current and future options for hermetic encapsulation and introduces how to utilize wafer level packaging and 3D integration technologies for package cost reduction and performance improvements Geared towards practical applications presenting several modern MEMS devices including inertial sensors, microphones, pressure sensors and micromirrors

New Research on Semiconductors

Author : Thomas B. Elliot
Publisher : Nova Publishers
ISBN 13 : 9781594549205
Total Pages : 236 pages
Book Rating : 4.5/5 (492 download)

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Book Synopsis New Research on Semiconductors by : Thomas B. Elliot

Download or read book New Research on Semiconductors written by Thomas B. Elliot and published by Nova Publishers. This book was released on 2006 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Includes within its scope, topics such as: studies of the structural, electrical, optical and acoustical properties of bulk, low-dimensional and amorphous semiconductors; and, interface properties, including the physics and chemistry of heterojunctions, metal-semiconductor and insulator-semiconductor junctions.

Point Defects in Group IV Semiconductors

Author : S. Pizzini
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291230
Total Pages : 134 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Point Defects in Group IV Semiconductors by : S. Pizzini

Download or read book Point Defects in Group IV Semiconductors written by S. Pizzini and published by Materials Research Forum LLC. This book was released on 2017-04-05 with total page 134 pages. Available in PDF, EPUB and Kindle. Book excerpt: A self-consistent model of point defects requires a reliable connection with the experimentally deduced structural, spectroscopic and thermodynamic properties of the defect centres, to allow their unambiguous identification. This book focuses on the properties of defects in group IV semiconductors and seeks to clarify whether full knowledge of their chemical nature can account for several problems encountered in practice. It is shown how difficult the fulfilment of self-consistency conditions can be, even today, after more than four decades of dedicated research work, especially in the case of compound semiconductors, such as SiC, but also in the apparently simple cases of silicon and germanium. The reason for this is that the available microscopic models do not yet account for defect interactions in real solids.

Imperfections and Active Centres in Semiconductors

Author : R. G. Rhodes
Publisher : Elsevier
ISBN 13 : 1483222810
Total Pages : 386 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Imperfections and Active Centres in Semiconductors by : R. G. Rhodes

Download or read book Imperfections and Active Centres in Semiconductors written by R. G. Rhodes and published by Elsevier. This book was released on 2014-05-12 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Imperfections and Active Centres in Semiconductors discusses principles of semiconduction theory in terms of the band model, and electrical properties as regards chemical or physical defects in the lattice structures. The book reviews the fundamental concepts of semiconductor crystals, semiconduction, silicon, and the atomic lattice of germanium. The Frenkel defect accounts for displaced atoms in the lattice that move into spaces between normal atom positions. The text describes dislocations or line defects, the motion and generation of dislocations, as well as the geometry of the dislocations in the diamond. Honrstra (1958), who shows the geometry of the dislocation structures through a diagram, also describes the geometry of more complicated types of dislocation in the diamond lattice. The book explains X-ray diffraction and crystal imperfections in which the amount of X-radiation reflected from a crystal specimen depends on the perfection or on the atomic structure of the reflecting planes. The electron microscope can reveal more detail in higher resolution, for example, the actual arrangement of the molecules around an edge dislocation has been exposed in a platinum phthalocyanine crystal. The book also describes the fabrication of semiconductor devices where the crystals are cut with an abrasive saw and then ground with fine abrasive. The text can be used by physicists, engineers, or technologists in the allied fields of solid state physics and materials engineering.

Defect and Impurity Engineered Semiconductors and Devices III: Volume 719

Author : S. Ashok
Publisher :
ISBN 13 :
Total Pages : 522 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 by : S. Ashok

Download or read book Defect and Impurity Engineered Semiconductors and Devices III: Volume 719 written by S. Ashok and published by . This book was released on 2002-08-09 with total page 522 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on the deliberate introduction and manipulation of defects and impurities in order to engineer desired properties in semiconductor materials and devices. In view of current exciting developments in wide-bandgap semiconductors like GaN for blue light emission, as well as high-speed and high-temperature electronics, dopant and defect issues relevant to these materials are addressed. Also featured are semiconductor nanocavities and nano-structures, with emphasis on the formation and impact of vacancy-type defects. Defect reaction problems pertaining to impurity gettering, precipitation and hydrogen passivation are specific examples of defect engineering that improve the electronic quality of the material. A number of papers also deal with characterization techniques needed to study and to identify defects in materials and device structures. Finally, papers also address issues such as interface control and passivation, application of ion implantation, plasma treatment and rapid thermal processing for creating/activating/suppressing trap levels, and device applications.

Semiconductor Silicon 1994

Author : Howard R. Huff
Publisher : The Electrochemical Society
ISBN 13 : 9781566770422
Total Pages : 1284 pages
Book Rating : 4.7/5 (74 download)

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Book Synopsis Semiconductor Silicon 1994 by : Howard R. Huff

Download or read book Semiconductor Silicon 1994 written by Howard R. Huff and published by The Electrochemical Society. This book was released on 1994 with total page 1284 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

Author : Peter Pichler
Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 576 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Semiconductor Wafer Bonding : Science, Technology, and Applications V

Author : Charles E. Hunt
Publisher : The Electrochemical Society
ISBN 13 : 9781566772587
Total Pages : 498 pages
Book Rating : 4.7/5 (725 download)

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Book Synopsis Semiconductor Wafer Bonding : Science, Technology, and Applications V by : Charles E. Hunt

Download or read book Semiconductor Wafer Bonding : Science, Technology, and Applications V written by Charles E. Hunt and published by The Electrochemical Society. This book was released on 2001 with total page 498 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanosilicon

Author : Anatoly A. Ischenko
Publisher : CRC Press
ISBN 13 : 1466594233
Total Pages : 734 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Nanosilicon by : Anatoly A. Ischenko

Download or read book Nanosilicon written by Anatoly A. Ischenko and published by CRC Press. This book was released on 2014-07-23 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanosilicon: Properties, Synthesis, Applications, Methods of Analysis and Control examines the latest developments on the physics and chemistry of nanosilicon. The book focuses on methods for producing nanosilicon, its electronic and optical properties, research methods to characterize its spectral and structural properties, and its possible applic

Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals

Author : Oleg Velichko
Publisher : World Scientific
ISBN 13 : 1786347172
Total Pages : 404 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals by : Oleg Velichko

Download or read book Coupled Diffusion Of Impurity Atoms And Point Defects In Silicon Crystals written by Oleg Velichko and published by World Scientific. This book was released on 2019-11-05 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work presents a comprehensive theory describing atomic diffusion in silicon crystals under strong nonequilibrium conditions caused by ion implantation and interaction with the surface or other interfaces. A set of generalized equations that describe diffusion of impurity atoms and point defects are presented in a form suitable for solving numerically. Based on this theory, partial diffusion models are constructed, and the simulation of many doping processes used in microelectronics is carried out.Coupled Diffusion of Impurity Atoms and Point Defects in Silicon Crystals is a useful text for researchers, engineers, and advanced students in semiconductor physics, microelectronics, and nanoelectronics. It helps readers acquire a deep understanding of the physics of diffusion and demonstrates the practical application of the theoretical ideas formulated to find cheaper solutions in the course of manufacturing semiconductor devices and integrated microcircuits.