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The Effects Of Ionizing Radiation On Transistor Gain
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Book Synopsis The Effects of Ionizing Radiation on Transistor Gain by : D. L. Nelson
Download or read book The Effects of Ionizing Radiation on Transistor Gain written by D. L. Nelson and published by . This book was released on 1965 with total page 28 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transistor gain is reduced by ioizing radiation, which affects the transistor surface, and by displacement radiation, which causes lattice defects. The investigation of ionizing radiation damage described in this paper was accomplished with X-rays of photon energy less than 150 kev, which is below the energy necessary for displacement damage in silicon. Experiments were performed on silicon dioxide passivated silicon planar transistors with open leads, in a normal amplifying mode and with other junction bias conditions. AC and DC gain measurements at various injection levels showed a gain degradation dependence on the operating bias conditions. Open leads and back-biasing of each junction during irradiation resulted in considerable damage, with almost complete recovery occurring in most transistors tested when the base emitter junction was forward-biased. Many of the characteristics of the radiation damage observed can be explained by Atalla's model that charge collection at the surface causes a widening of the space charge region, thus increasing the recombination-generation current.
Book Synopsis The Effects of Ionizing Radiation on Transistors by : Daniel Paul Peletier
Download or read book The Effects of Ionizing Radiation on Transistors written by Daniel Paul Peletier and published by . This book was released on 1967 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: An experiment, in which 15 npn bipolar silicon transistors were exposed to Co60 gamma radiation, is described. The known theory concerning the radiation damage of transistors is presented. In addition, the distinguishing characteristics of ionizing radiation damage are discussed, and a method of estimating bulk damage is developed. During the experiment, the following transistor parameters were measured: AC and DC common emitter current gain, collector-to-base leakage current, gain-bandwidth product, and base spreading resistance. The damage curves for leakage current and AC and DC common emitter current gain are plotted and discussed. The relation between transistor parameter degradation and bias current is investigated by dividing the transistors into three equal groups and biasing them at three different collector levels during irradiation. The recovery of leakage current is plotted and an exponential curve fitted to the data. Recovery time of current gain is qualitatively observed. Data indicate that in some transistors damage to leakage current peaks near an accumulated radiation dose of 100,000 rad. The value of this peak is as large as 300 times the final damage value. The recovery time constant of leakage current damage is less than 15 minutes for the transistors tested. (Author).
Book Synopsis The Effects of Radiation on Electronic Systems by : George Messenger
Download or read book The Effects of Radiation on Electronic Systems written by George Messenger and published by Springer. This book was released on 1992-05-14 with total page 984 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in Electronics by :
Download or read book Radiation Effects in Electronics written by and published by ASTM International. This book was released on 1965 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ionizing Radiation Effects in Electronics by : Marta Bagatin
Download or read book Ionizing Radiation Effects in Electronics written by Marta Bagatin and published by CRC Press. This book was released on 2018-09-03 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ionizing Radiation Effects in Electronics: From Memories to Imagers delivers comprehensive coverage of the effects of ionizing radiation on state-of-the-art semiconductor devices. The book also offers valuable insight into modern radiation-hardening techniques. The text begins by providing important background information on radiation effects, their underlying mechanisms, and the use of Monte Carlo techniques to simulate radiation transport and the effects of radiation on electronics. The book then: Explains the effects of radiation on digital commercial devices, including microprocessors and volatile and nonvolatile memories—static random-access memories (SRAMs), dynamic random-access memories (DRAMs), and Flash memories Examines issues like soft errors, total dose, and displacement damage, together with hardening-by-design solutions for digital circuits, field-programmable gate arrays (FPGAs), and mixed-analog circuits Explores the effects of radiation on fiber optics and imager devices such as complementary metal-oxide-semiconductor (CMOS) sensors and charge-coupled devices (CCDs) Featuring real-world examples, case studies, extensive references, and contributions from leading experts in industry and academia, Ionizing Radiation Effects in Electronics: From Memories to Imagers is suitable both for newcomers who want to become familiar with radiation effects and for radiation experts who are looking for more advanced material or to make effective use of beam time.
Book Synopsis Radiation Effects in Electronics by :
Download or read book Radiation Effects in Electronics written by and published by . This book was released on 1965 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Influence of Operating Conditions on Radiation Damage to Transistor Gain by : H. L. Chambers
Download or read book Influence of Operating Conditions on Radiation Damage to Transistor Gain written by H. L. Chambers and published by . This book was released on 1965 with total page 26 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gain degradation rates were obtained for various transistor operating conditions of current and voltage during Cobalt 60 irradiation and compared with the degradation rate for a radiation exposure in the passive state. The effects of emitter current alone, collector voltage alone, and normal transistor operating modes were studied. The results showed that increasing levels of carrier injection from the emitter caused decreasing rates of damage. For a 2N1613 type silicon transistor, the maximum reduction observed was approximately a factor of 2. This behavior is believed to be due to an alteration of the charge state of the radiation induced defect at the time the defect is formed. A lesser dependency with collector voltage was also observed. The effects of temperature in the range 105 F to 140 F, during gamma irradiation, were found to be small in comparison with the effects of active-passive current variations. Tests conducted in a neutron environment, where normal transistor operating modes were compared with the passive irradiation state, indicated very little influence upon damage rate.
Book Synopsis Radiation Induced Nonlinear Degradation of Transistor Gain by : Boeing Company
Download or read book Radiation Induced Nonlinear Degradation of Transistor Gain written by Boeing Company and published by . This book was released on 1970 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: This report investigates ionization induced surface effects on transistors.
Book Synopsis Transistor Design Effects on Radiation Resistance by : C. C. Berggren
Download or read book Transistor Design Effects on Radiation Resistance written by C. C. Berggren and published by . This book was released on 1968 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Research on the Radiation Effects and Compact Model of SiGe HBT by : Yabin Sun
Download or read book Research on the Radiation Effects and Compact Model of SiGe HBT written by Yabin Sun and published by Springer. This book was released on 2017-10-24 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily focuses on the radiation effects and compact model of silicon-germanium (SiGe) heterojunction bipolar transistors (HBTs). It introduces the small-signal equivalent circuit of SiGe HBTs including the distributed effects, and proposes a novel direct analytical extraction technique based on non-linear rational function fitting. It also presents the total dose effects irradiated by gamma rays and heavy ions, as well as the single-event transient induced by pulse laser microbeams. It offers readers essential information on the irradiation effects technique and the SiGe HBTs model using that technique.
Book Synopsis Radiation Effects in Semiconductor Devices by : Frank Larin
Download or read book Radiation Effects in Semiconductor Devices written by Frank Larin and published by . This book was released on 1968 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices by : Dan M. Fleetwood
Download or read book Radiation Effects and Soft Errors in Integrated Circuits and Electronic Devices written by Dan M. Fleetwood and published by World Scientific. This book was released on 2004 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a detailed treatment of radiation effects in electronic devices, including effects at the material, device, and circuit levels. The emphasis is on transient effects caused by single ionizing particles (single-event effects and soft errors) and effects produced by the cumulative energy deposited by the radiation (total ionizing dose effects). Bipolar (Si and SiGe), metalOCooxideOCosemiconductor (MOS), and compound semiconductor technologies are discussed. In addition to considering the specific issues associated with high-performance devices and technologies, the book includes the background material necessary for understanding radiation effects at a more general level. Contents: Single Event Effects in Avionics and on the Ground (E Normand); Soft Errors in Commercial Integrated Circuits (R C Baumann); System Level Single Event Upset Mitigation Strategies (W F Heidergott); Space Radiation Effects in Optocouplers (R A Reed et al.); The Effects of Space Radiation Exposure on Power MOSFETs: A Review (K Shenai et al.); Total Dose Effects in Linear Bipolar Integrated Circuits (H J Barnaby); Hardness Assurance for Commercial Microelectronics (R L Pease); Switching Oxide Traps (T R Oldham); Online and Realtime Dosimetry Using Optically Stimulated Luminescence (L Dusseau & J Gasiot); and other articles. Readership: Practitioners, researchers, managers and graduate students in electrical and electronic engineering, semiconductor science and technology, and microelectronics."
Download or read book Nuclear Science Abstracts written by and published by . This book was released on 1975 with total page 1090 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Foundations of Space Biology and Medicine: Space as a habitat by :
Download or read book Foundations of Space Biology and Medicine: Space as a habitat written by and published by . This book was released on 1975 with total page 472 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Technical Abstract Bulletin written by and published by . This book was released on with total page 908 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Radiation Effects in III-V Heterojunction Bipolar Transistors by : Soujanya Vuppala
Download or read book Radiation Effects in III-V Heterojunction Bipolar Transistors written by Soujanya Vuppala and published by . This book was released on 2004 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The devices were subjected to electron and neutron irradiation and were electrically characterized before and after irradiation. Under electron irradiation these devices were quite robust up to a fluence of 6.69x 10^15 e/cm^2. However, a more careful analysis showed a slight gain improvement at a low base current and a small gain degradation at higher base currents. The gain increase at small base currents and low fluence is believed to be caused by the ionization damage in the polyimide passivation layer. The gain degradation at higher fluence and high base currents is due to the displacement damage in the emitter-base junction region. In the case of neutron irradiation the major effects were (1) the decrease of collector current or equivalently the common-emitter DC current gain reduction and (2) the collector-emitter offset voltage shift. At low fluence of neutron irradiation, a small gain increase is observed at low base currents which is caused by the suppression of the base current due to ionization effect. At higher fluence, gain degradation is observed whose magnitude depends upon the nature and fluence of the irradiation particle. This degradation is caused by the displacement damage in the SCR leading to the current gain degradation at all base currents. In addition to the gain degradation, neutron irradiation causes a shift of the collector-emitter offset voltage, which is caused by the displacement damage in the base-collector region.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1979 with total page 738 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
