The Effect of Oxidation on Impurity Diffusion and Stacking Fault Growth in Silicon

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Publisher :
ISBN 13 :
Total Pages : 152 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis The Effect of Oxidation on Impurity Diffusion and Stacking Fault Growth in Silicon by : Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory

Download or read book The Effect of Oxidation on Impurity Diffusion and Stacking Fault Growth in Silicon written by Stanford University. Stanford Electronics Laboratories. Integrated Circuits Laboratory and published by . This book was released on 1982 with total page 152 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon

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Publisher : Springer Science & Business Media
ISBN 13 : 3709105978
Total Pages : 554 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler

Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.

Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 9780792350071
Total Pages : 528 pages
Book Rating : 4.3/5 (5 download)

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Book Synopsis Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices by : Eric Garfunkel

Download or read book Fundamental Aspects of Ultrathin Dielectrics on Si-based Devices written by Eric Garfunkel and published by Springer Science & Business Media. This book was released on 1998-03-31 with total page 528 pages. Available in PDF, EPUB and Kindle. Book excerpt: An extrapolation of ULSI scaling trends indicates that minimum feature sizes below 0.1 mu and gate thicknesses of Audience: Both expert scientists and engineers who wish to keep up with cutting edge research, and new students who wish to learn more about the exciting basic research issues relevant to next-generation device technology.

Silicon Integrated Circuits

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Publisher : Academic Press
ISBN 13 : 148321477X
Total Pages : 310 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Silicon Integrated Circuits by : Dawon Kahng

Download or read book Silicon Integrated Circuits written by Dawon Kahng and published by Academic Press. This book was released on 2013-10-22 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon Integrated Circuits, Part B covers the special considerations needed to achieve high-power Si-integrated circuits. The book presents articles about the most important operations needed for the high-power circuitry, namely impurity diffusion and oxidation; crystal defects under thermal equilibrium in silicon and the development of high-power device physics; and associated technology. The text also describes the ever-evolving processing technology and the most promising approaches, along with the understanding of processing-related areas of physics and chemistry. Physicists, chemists, and engineers involved in silicon integrated circuits will find the book invaluable.

Fundamentals of Semiconductor Processing Technology

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Publisher : Springer Science & Business Media
ISBN 13 : 9780792395348
Total Pages : 620 pages
Book Rating : 4.3/5 (953 download)

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Book Synopsis Fundamentals of Semiconductor Processing Technology by : Badih El-Kareh

Download or read book Fundamentals of Semiconductor Processing Technology written by Badih El-Kareh and published by Springer Science & Business Media. This book was released on 1994-12-31 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: The drive toward new semiconductor technologies is intricately related to market demands for cheaper, smaller, faster, and more reliable circuits with lower power consumption. The development of new processing tools and technologies is aimed at optimizing one or more of these requirements. This goal can, however, only be achieved by a concerted effort between scientists, engineers, technicians, and operators in research, development, and manufac turing. It is therefore important that experts in specific disciplines, such as device and circuit design, understand the principle, capabil ities, and limitations of tools and processing technologies. It is also important that those working on specific unit processes, such as lithography or hot processes, be familiar with other unit processes used to manufacture the product. Several excellent books have been published on the subject of process technologies. These texts, however, cover subjects in too much detail, or do not cover topics important to modem tech nologies. This book is written with the need for a "bridge" between different disciplines in mind. It is intended to present to engineers and scientists those parts of modem processing technologies that are of greatest importance to the design and manufacture of semi conductor circuits. The material is presented with sufficient detail to understand and analyze interactions between processing and other semiconductor disciplines, such as design of devices and cir cuits, their electrical parameters, reliability, and yield.

High-Speed and Lower Power Technologies

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Publisher : CRC Press
ISBN 13 : 1351242288
Total Pages : 358 pages
Book Rating : 4.3/5 (512 download)

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Book Synopsis High-Speed and Lower Power Technologies by : Jung Han Choi

Download or read book High-Speed and Lower Power Technologies written by Jung Han Choi and published by CRC Press. This book was released on 2018-09-03 with total page 358 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores up-to-date research trends and achievements on low-power and high-speed technologies in both electronics and optics. It offers unique insight into low-power and high-speed approaches ranging from devices, ICs, sub-systems and networks that can be exploited for future mobile devices, 5G networks, Internet of Things (IoT), and data centers. It collects heterogeneous topics in place to catch and predict future research directions of devices, circuits, subsystems, and networks for low-power and higher-speed technologies. Even it handles about artificial intelligence (AI) showing examples how AI technology can be combined with concurrent electronics. Written by top international experts in both industry and academia, the book discusses new devices, such as Si-on-chip laser, interconnections using graphenes, machine learning combined with CMOS technology, progresses of SiGe devices for higher-speed electronices for optic, co-design low-power and high-speed circuits for optical interconnect, low-power network-on-chip (NoC) router, X-ray quantum counting, and a design of low-power power amplifiers. Covers modern high-speed and low-power electronics and photonics. Discusses novel nano-devices, electronics & photonic sub-systems for high-speed and low-power systems, and many other emerging technologies like Si photonic technology, Si-on-chip laser, low-power driver for optic device, and network-on-chip router. Includes practical applications and recent results with respect to emerging low-power systems. Addresses the future perspective of silicon photonics as a low-power interconnections and communication applications.

Dissertation Abstracts International

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Publisher :
ISBN 13 :
Total Pages : 562 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1989 with total page 562 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Technology CAD — Computer Simulation of IC Processes and Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 1461532086
Total Pages : 386 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Technology CAD — Computer Simulation of IC Processes and Devices by : Robert W. Dutton

Download or read book Technology CAD — Computer Simulation of IC Processes and Devices written by Robert W. Dutton and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: 129 3.6 Exercises 130 3.7 References. 131 4 PN Junctions 131 4.1 Introduction. 132 4.2 Carrier Densities: Equilibrium Case 4.3 Non-Equilibrium .......... . 139 4.4 Carrier Transport and Conservation 144 4.5 The pn Junction - Equilibrium Conditions. 147 155 4.6 The pn Junction - Non-equilibrium. 4.7 SEDAN Analysis . . . . . . . . . . . . . 166 4.7.1 Heavy Doping Effects ..... . 176 4.7.2 Analysis of High-Level Injection 181 190 4.7.3 Technology-Dependent Device Effects 4.8 Summary 193 4.9 Exercises 193 194 4.10 References. 5 MOS Structures 197 5.1 Introduction ............. . 197 5.2 The MOS Capacitor ........ . 198 5.3 Basic MOSFET I-V Characteristics. 208 5.4 Threshold Voltage in Nonuniform Substrate 217 5.5 MOS Device Design by Simulation . . . . . 224 5.5.1 Body-bias Sensitivity of Threshold Voltage 225 5.5.2 Two-region Model . . . . . . . . 231 5.5.3 MOSFET Design by Simulation. 234 5.6 Summary 240 5.7 Exercises 240 5.8 References. 242 6 Bipolar Transistors 243 6.1 Introduction ... 243 6.2 Lateral pnp Transistor Operation 245 6.3 Transport Current Analysis ... 252 6.4 Generalized Charge Storage Model 260 6.,1) Transistor Equivalent Circuits. 267 6.5.1 Charge Control Model ...

Silicon, Germanium, and Their Alloys

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Publisher : CRC Press
ISBN 13 : 1466586656
Total Pages : 431 pages
Book Rating : 4.4/5 (665 download)

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Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger

Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 431 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon–germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevices based on nanowires and nanodots. Silicon, Germanium, and Their Alloys: Growth, Defects, Impurities, and Nanocrystals covers the entire spectrum of R&D activities in silicon, germanium, and their alloys, presenting the latest achievements in the field of crystal growth, point defects, extended defects, and impurities of silicon and germanium nanocrystals. World-recognized experts are the authors of the book’s chapters, which span bulk, thin film, and nanostructured materials growth and characterization problems, theoretical modeling, crystal defects, diffusion, and issues of key applicative value, including chemical etching as a defect delineation technique, the spectroscopic analysis of impurities, and the use of devices as tools for the measurement of materials quality.

Process and Device Simulation for MOS-VLSI Circuits

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Publisher : Springer Science & Business Media
ISBN 13 : 9400968426
Total Pages : 632 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Process and Device Simulation for MOS-VLSI Circuits by : P. Antognetti

Download or read book Process and Device Simulation for MOS-VLSI Circuits written by P. Antognetti and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: P. Antognetti University of Genova, Italy Director of the NATO ASI The key importance of VLSI circuits is shown by the national efforts in this field taking place in several countries at differ ent levels (government agencies, private industries, defense de partments). As a result of the evolution of IC technology over the past two decades, component complexi ty has increased from one single to over 400,000 transistor functions per chip. Low cost of such single chip systems is only possible by reducing design cost per function and avoiding cost penalties for design errors. Therefore, computer simulation tools, at all levels of the design process, have become an absolute necessity and a cornerstone in the VLSI era, particularly as experimental investigations are very time-consuming, often too expensive and sometimes not at all feasible. As minimum device dimensions shrink, the need to understand the fabrication process in a quanti tati ve way becomes critical. Fine patterns, thin oxide layers, polycristalline silicon interco~ nections, shallow junctions and threshold implants, each become more sensitive to process variations. Each of these technologies changes toward finer structures requires increased understanding of the process physics. In addition, the tighter requirements for process control make it imperative that sensitivities be unde~ stood and that optimation be used to minimize the effect of sta tistical fluctuations.

Impurity Doping Processes in Silicon

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Publisher : Elsevier
ISBN 13 : 008098357X
Total Pages : 652 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Impurity Doping Processes in Silicon by : F.F.Y. Wang

Download or read book Impurity Doping Processes in Silicon written by F.F.Y. Wang and published by Elsevier. This book was released on 2012-12-02 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces to non-experts several important processes of impurity doping in silicon and goes on to discuss the methods of determination of the concentration of dopants in silicon. The conventional method used is the discussion process, but, since it has been sufficiently covered in many texts, this work describes the double-diffusion method.

Research in Progress

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Publisher :
ISBN 13 :
Total Pages : 834 pages
Book Rating : 4.:/5 (334 download)

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Book Synopsis Research in Progress by :

Download or read book Research in Progress written by and published by . This book was released on 1978 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Proceedings of the Tutorial Symposium on Semiconductor Technology

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Publisher : Pennington, NJ : Electrochemical Society
ISBN 13 :
Total Pages : 268 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Proceedings of the Tutorial Symposium on Semiconductor Technology by : Electrochemical Society. Dielectrics and Insulation Division

Download or read book Proceedings of the Tutorial Symposium on Semiconductor Technology written by Electrochemical Society. Dielectrics and Insulation Division and published by Pennington, NJ : Electrochemical Society. This book was released on 1982 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt:

SIAM Journal on Scientific and Statistical Computing

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Publisher :
ISBN 13 :
Total Pages : 848 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis SIAM Journal on Scientific and Statistical Computing by : Society for Industrial and Applied Mathematics

Download or read book SIAM Journal on Scientific and Statistical Computing written by Society for Industrial and Applied Mathematics and published by . This book was released on 1983 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Silicon 1977

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Publisher :
ISBN 13 :
Total Pages : 1170 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Semiconductor Silicon 1977 by : Howard R. Huff

Download or read book Semiconductor Silicon 1977 written by Howard R. Huff and published by . This book was released on 1977 with total page 1170 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Microelectronic Materials and Processes

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Publisher : Springer Science & Business Media
ISBN 13 : 9400909179
Total Pages : 992 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Microelectronic Materials and Processes by : R.A. Levy

Download or read book Microelectronic Materials and Processes written by R.A. Levy and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 992 pages. Available in PDF, EPUB and Kindle. Book excerpt: The primary thrust of very large scale integration (VLS!) is the miniaturization of devices to increase packing density, achieve higher speed, and consume lower power. The fabrication of integrated circuits containing in excess of four million components per chip with design rules in the submicron range has now been made possible by the introduction of innovative circuit designs and the development of new microelectronic materials and processes. This book addresses the latter challenge by assessing the current status of the science and technology associated with the production of VLSI silicon circuits. It represents the cumulative effort of experts from academia and industry who have come together to blend their expertise into a tutorial overview and cohesive update of this rapidly expanding field. A balance of fundamental and applied contributions cover the basics of microelectronics materials and process engineering. Subjects in materials science include silicon, silicides, resists, dielectrics, and interconnect metallization. Subjects in process engineering include crystal growth, epitaxy, oxidation, thin film deposition, fine-line lithography, dry etching, ion implantation, and diffusion. Other related topics such as process simulation, defects phenomena, and diagnostic techniques are also included. This book is the result of a NATO-sponsored Advanced Study Institute (AS!) held in Castelvecchio Pascoli, Italy. Invited speakers at this institute provided manuscripts which were edited, updated, and integrated with other contributions solicited from non-participants to this AS!.

Semiconductor Characterization Techniques

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Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Semiconductor Characterization Techniques by : Peter A. Barnes

Download or read book Semiconductor Characterization Techniques written by Peter A. Barnes and published by . This book was released on 1978 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt: