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Technology And Physical Parameter Extraction Formalisms For The High Frequency Optimization Of Self Aligned Gaas Algaas Heterojunction Bipolar Transistors
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Book Synopsis Technology and Physical Parameter Extraction Formalisms for the High-frequency Optimization of Self-aligned GaAs/AlGaAs Heterojunction Bipolar Transistors by : David R. Pehlke
Download or read book Technology and Physical Parameter Extraction Formalisms for the High-frequency Optimization of Self-aligned GaAs/AlGaAs Heterojunction Bipolar Transistors written by David R. Pehlke and published by . This book was released on 1994 with total page 586 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Current Trends in Heterojunction Bipolar Transistors by : M. F. Chang
Download or read book Current Trends in Heterojunction Bipolar Transistors written by M. F. Chang and published by World Scientific. This book was released on 1996 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in communication, digital signal processing and computational systems demand very high performance electronic circuits. Heterojunction Bipolar Transistors (HBTs) have the potential of providing a more efficient solution to many key system requirements through intrinsic device advantages. This book reviews the present status of GaAs, InP and silicon-based HBT technologies and their applications to digital, analog, microwave and mixed-signal circuits and systems. It represents the first major effort to cover the complete scope of the HBT technology development in the past decade, starting from the fundamental device physics, material growth, device reliability, scaling, processing, modeling to advanced HBT integrated circuit design for various system applications.
Book Synopsis InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification by : Donald James Sawdai
Download or read book InP-based NPN and PNP Heterojunction Bipolar Transistor Design, Technology, and Characterization for Enhanced High-frequency Power Amplification written by Donald James Sawdai and published by . This book was released on 1999 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits by : Delong Cui
Download or read book InP-based Materials and Heterostructure Devices, and the Applications in Monolithic Integrated NPN and PNP HBT Circuits written by Delong Cui and published by . This book was released on 2001 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis American Doctoral Dissertations by :
Download or read book American Doctoral Dissertations written by and published by . This book was released on 1993 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optoelectronic Devices and Integrated Circuits for Imaging Applications by : Sameer S. Pradhan
Download or read book Optoelectronic Devices and Integrated Circuits for Imaging Applications written by Sameer S. Pradhan and published by . This book was released on 2003 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nonlinear Transistor Model Parameter Extraction Techniques by : Matthias Rudolph
Download or read book Nonlinear Transistor Model Parameter Extraction Techniques written by Matthias Rudolph and published by Cambridge University Press. This book was released on 2011-10-13 with total page 367 pages. Available in PDF, EPUB and Kindle. Book excerpt: Achieve accurate and reliable parameter extraction using this complete survey of state-of-the-art techniques and methods. A team of experts from industry and academia provides you with insights into a range of key topics, including parasitics, intrinsic extraction, statistics, extraction uncertainty, nonlinear and DC parameters, self-heating and traps, noise, and package effects. Learn how similar approaches to parameter extraction can be applied to different technologies. A variety of real-world industrial examples and measurement results show you how the theories and methods presented can be used in practice. Whether you use transistor models for evaluation of device processing and you need to understand the methods behind the models you use, or you want to develop models for existing and new device types, this is your complete guide to parameter extraction.
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 1132 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Distortion in RF Power Amplifiers by : Joel Vuolevi
Download or read book Distortion in RF Power Amplifiers written by Joel Vuolevi and published by Artech House. This book was released on 2003 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is a thorough treatment of distortion in RF power amplifiers. This unique resource offers expert guidance in designing easily linearizable systems that have low memory effects. It offers you a detailed understanding of how the matching impedances of a power amplifier and other RF circuits can be tuned to minimize overall distortion. What's more, you see how to build models that can be used for distortion simulations.
Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma
Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1299 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.
Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski
Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Book Synopsis Intelligent Computing Techniques for Smart Energy Systems by : Akhtar Kalam
Download or read book Intelligent Computing Techniques for Smart Energy Systems written by Akhtar Kalam and published by Springer Nature. This book was released on 2019-12-16 with total page 1011 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book compiles the research works related to smart solutions concept in context to smart energy systems, maintaining electrical grid discipline and resiliency, computational collective intelligence consisted of interaction between smart devices, smart environments and smart interactions, as well as information technology support for such areas. It includes high-quality papers presented in the International Conference on Intelligent Computing Techniques for Smart Energy Systems organized by Manipal University Jaipur. This book will motivate scholars to work in these areas. The book also prophesies their approach to be used for the business and the humanitarian technology development as research proposal to various government organizations for funding approval.
Book Synopsis Power GaN Devices by : Matteo Meneghini
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Download or read book X-Parameters written by David E. Root and published by Cambridge University Press. This book was released on 2013-09-26 with total page 237 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the definitive guide to X-parameters, written by the original inventors and developers of this powerful new paradigm for nonlinear RF and microwave components and systems. Learn how to use X-parameters to overcome intricate problems in nonlinear RF and microwave engineering. The general theory behind X-parameters is carefully and intuitively introduced, and then simplified down to specific, practical cases, providing you with useful approximations that will greatly reduce the complexity of measuring, modeling and designing for nonlinear regimes of operation. Containing real-world case studies, definitions of standard symbols and notation, detailed derivations within the appendices, and exercises with solutions, this is the definitive stand-alone reference for researchers, engineers, scientists and students looking to remain on the cutting-edge of RF and microwave engineering.
Book Synopsis Polarization Effects in Semiconductors by : Debdeep Jena
Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.
Book Synopsis Electronic Structure of Semiconductor Heterojunctions by : Giorgio Margaritondo
Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Book Synopsis Terahertz Frequency Detection and Identification of Materials and Objects by : R.E. Miles
Download or read book Terahertz Frequency Detection and Identification of Materials and Objects written by R.E. Miles and published by Springer Science & Business Media. This book was released on 2007-09-08 with total page 365 pages. Available in PDF, EPUB and Kindle. Book excerpt: Want an overview of where the technology of terahertz detection has been going? Here it is. The technology has largely been developed around expensive and bulky femtosecond laser systems but, as described in this book, advances in semiconductor superlattice technology are leading to compact "electronic" sources such as the quantum cascade laser, two-terminal "Gunn" type oscillators and even a THz frequency amplifier. These advances towards electronic (as opposed to optical) THz systems mean that the technology will become portable and much less costly.