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Author : Steffen Kellermann
Publisher :
ISBN 13 :
Total Pages : 91 pages
Book Rating : 4.:/5 (54 download)
Download or read book Synthesis and Characterization of Group-III Nitrides written by Steffen Kellermann and published by . This book was released on 2001 with total page 91 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : James H. Edgar
Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 328 pages
Book Rating : 4.3/5 (91 download)
Download or read book Properties of Group III Nitrides written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1994 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: The group III nitrides are playing an increasingly important role in the development of commercially viable microelectronic and optoelectronic devices. This volume provides reviews and evaluations of the group, in addition to guidance on the current reference literature.
Author : M Razeghi
Publisher : Elsevier
ISBN 13 : 9780080444260
Total Pages : 602 pages
Book Rating : 4.4/5 (442 download)
Download or read book Optoelectronic Devices written by M Razeghi and published by Elsevier. This book was released on 2004 with total page 602 pages. Available in PDF, EPUB and Kindle. Book excerpt: Tremendous progress has been made in the last few years in the growth, doping and processing technologies of the wide bandgap semiconductors. As a result, this class of materials now holds significant promis for semiconductor electronics in a broad range of applications. The principal driver for the current revival of interest in III-V Nitrides is their potential use in high power, high temperature, high frequency and optical devices resistant to radiation damage. This book provides a wide number of optoelectronic applications of III-V nitrides and covers the entire process from growth to devices and applications making it essential reading for those working in the semiconductors or microelectronics. Broad review of optoelectronic applications of III-V nitrides
Author : Michael P. Shemkunas
Publisher :
ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (539 download)
Download or read book Synthesis and Characterization of Group IV Spinel Structure Nitrides written by Michael P. Shemkunas and published by . This book was released on 2002 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael A. Serio
Publisher :
ISBN 13 :
Total Pages : 296 pages
Book Rating : 4.3/5 (91 download)
Download or read book Synthesis and Characterization of Advanced Materials written by Michael A. Serio and published by . This book was released on 1998 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: These papers by leading experts look at current methods for synthesizing new materials. The methods presented include chemical vapor deposition synthesis, solution synthesis, pyrolysis and combustion synthesis, and polymer synthesis. Featuring in-depth coverage of ceramic materials, the volume also discusses group III nitrides, fullerenes, and ferroelectrics.
Author : Mark Stuart Bailey
Publisher :
ISBN 13 :
Total Pages : 896 pages
Book Rating : 4.E/5 ( download)
Download or read book The Synthesis and Characterization of Nitrides and Other Non-oxide Materials written by Mark Stuart Bailey and published by . This book was released on 2005 with total page 896 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 53 pages
Book Rating : 4.:/5 (684 download)
Download or read book Synthesis and Characterization of Novel Group VI Metal (Mo, W) Nitride and Oxide Compounds written by and published by . This book was released on 1998 with total page 53 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigations into the preparation of tungsten nitrides have involved the synthesis of molecular precursors, and their conversion to tungsten nitrides at relatively low temperatures. Two interesting molecular precursors, [WNCl3·NCCH3]4 and WN(N3)3·xNCCH3, have been prepared and characterized. The molecular structure of the first consists of a W4N4 tetrameric core with multiple and single W-N bonds arranged in an alternating fashion. Three new solid state phases, amorphous W3N5, cubic WN, and W2N2(C2N2), have been discovered by solid state and chemical vapor transport reactions. The structures have been investigated. A systematic study in the Ln2O3-MoO3-Mo (Ln = La, Ce, Pr, Nd, Sm) system has been explored to better understand LnMoO14. The study has shown that the sizes of the rare-earth cations affect the formation of these phases. Larger cations (La, Ce, and Pr) aid in the formation of trans-Mo bicapped octahedra, and the smaller cations (Nd, Sm) only stabilize the cis-Mo8 bicapped octahedra. Magnetic susceptibility measurements have indicated that no effective moment contribution arises from the Mo8 metal clusters, even though the cis-Mo8 cluster in LnMo8O14, containing all cis-Mo8 octahedra, apparently contains an odd number of electrons (23). Electrical resistivity measurements and electronic structure calculations have shown that the LnMo8O14 compounds containing cis-Mo8 clusters are metallic, and the LnMo8O14 compounds containing a 1:1 ratio of cis- to trans-Mo8 clusters are semiconducting.
Author : Ayse Erol
Publisher : Springer Science & Business Media
ISBN 13 : 3540745297
Total Pages : 607 pages
Book Rating : 4.5/5 (47 download)
Download or read book Dilute III-V Nitride Semiconductors and Material Systems written by Ayse Erol and published by Springer Science & Business Media. This book was released on 2008-01-12 with total page 607 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book reviews the current status of research and development in dilute III-V nitrides. It covers major developments in this new class of materials within 24 chapters from prominent research groups. The book integrates materials science and applications in optics and electronics in a unique way. It is valuable both as a reference work for researchers and as a study text for graduate students.
Author : Zhihong Zhang
Publisher :
ISBN 13 :
Total Pages : 386 pages
Book Rating : 4.:/5 (391 download)
Download or read book Synthesis and Characterization of Novel Group VI Metal (Mo, W) Nitride and Oxide Compounds written by Zhihong Zhang and published by . This book was released on 1997 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Binary Group VI metal nitrides are characterized by thermodynamic instability towards dissociation to N2 and the N-saturated elements at high temperature. Our investigations into the preparation of tungsten nitrides have involved the synthesis of molecular precursors, and their conversion to tungsten nitrides at relatively low temperatures. Two interesting molecular precursors, [WNCl3·NCCH3]4 and WN(N3)3·xNCCH3, have been prepared and characterized. The Molecular structure of [WNCl3·NCCH3]4 consists of a W4N4 tetrameric core with multiple and single WN bonds arranged in an alternating fashion.
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1908978813
Total Pages : 477 pages
Book Rating : 4.9/5 (89 download)
Download or read book Iii-nitride Devices And Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008-08-19 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field./a
Author : Phillip Ray Coffman
Publisher :
ISBN 13 :
Total Pages : 260 pages
Book Rating : 4.:/5 (393 download)
Download or read book Synthesis, Processing, and Characterization of Several Group IV, V and VI Nitrides and Related Compounds written by Phillip Ray Coffman and published by . This book was released on 1996 with total page 260 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Zhe Chuan Feng
Publisher : World Scientific
ISBN 13 : 1848162235
Total Pages : 477 pages
Book Rating : 4.8/5 (481 download)
Download or read book III-nitride Devices and Nanoengineering written by Zhe Chuan Feng and published by World Scientific. This book was released on 2008 with total page 477 pages. Available in PDF, EPUB and Kindle. Book excerpt: Devices, nanoscale science and technologies based on GaN and related materials, have achieved great developments in recent years. New GaN-based devices such as UV detectors, fast p-HEMT and microwave devices are developed far more superior than other semiconductor materials-based devices.Written by renowned experts, the review chapters in this book cover the most important topics and achievements in recent years, discuss progress made by different groups, and suggest future directions. Each chapter also describes the basis of theory and experiment.This book is an invaluable resource for device design and processing engineers, material growers and evaluators, postgraduates and scientists as well as newcomers in the GaN field.
Author : Heock-Hoi Kwon
Publisher :
ISBN 13 :
Total Pages : 284 pages
Book Rating : 4.3/5 (91 download)
Download or read book Synthesis and Characterization of Group V Metal Carbide and Nitride Catalysts written by Heock-Hoi Kwon and published by . This book was released on 1998 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Torsten Schmidtling
Publisher :
ISBN 13 :
Total Pages : 135 pages
Book Rating : 4.:/5 (18 download)
Download or read book MOVPE Growth and Characterization of Group III Nitrides Using in Situ Spectroscopic Ellipsometry written by Torsten Schmidtling and published by . This book was released on 2006 with total page 135 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Elke Meissner
Publisher : Springer Nature
ISBN 13 : 3030563057
Total Pages : 351 pages
Book Rating : 4.0/5 (35 download)
Download or read book Ammonothermal Synthesis and Crystal Growth of Nitrides written by Elke Meissner and published by Springer Nature. This book was released on 2021-02-07 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a collection of contributed chapters, delivering a comprehensive overview of topics related to the synthesis and crystal growth of nitride compounds under supercritical ammonia conditions. Focusing on key chemical and technological aspects of ammonothermal synthesis and growth of functional nitride compounds, the book also describes many innovative techniques for in-situ observation and presents new data fundamental for materials synthesis under ammonothermal conditions. With its detailed coverage of many thermodynamic and kinetics aspects, which are necessary for understanding and controlling crystal growth, this contributed volume is the ideal companion to materials chemists and engineers at any point in their journey in this rich and exciting field.
Author :
Publisher :
ISBN 13 :
Total Pages : 84 pages
Book Rating : 4.:/5 (318 download)
Download or read book Innovative Growth and Defect Analysis of Group III - Nitrides for High Speed Electronics written by and published by . This book was released on 2008 with total page 84 pages. Available in PDF, EPUB and Kindle. Book excerpt: The project focused on novel techniques in growth and characterization which may enhance group III - nitride applications. On the growth side nitride deposition on diamond templates was characterized as the most promising novel growth techniques. The continuing progress can be supported applying the novel characterization technique described below. Local inhomogeneities are a common feature in group III - nitrides. With standard characterization methods such materials cannot be properly evaluated. Multiple group III - nitride epilayers were investigated utilizing VEELS in combination with high resolution TEM in order to characterize the materials in high spatial and energy resolution. It was found that possible side effects such as sample damage due to electron irradiation or falsified results due to retardation effects can be avoided if proper sample treatment is applied. It is assumed that the occurrence of local electronic transitions in close vicinity to interfaces is due to the presence of local point or surface defects. For the first time it may become possible to investigate the impact of such defects on the performance of devices. For the InGaN alloy system nano-cluster formation which changes optical responses was investigated. It was found that the III-V compound InN exists as a composite InN:In material. InN commonly exhibits multiple optical responses including an interface and/or surface related effect, which triggered confusing scientific models in the past. The prospect of exploiting multiple energy transitions within ONE material offers completely new alternatives for novel device development.
Author : Thomas F. Kent
Publisher :
ISBN 13 :
Total Pages : 224 pages
Book Rating : 4.:/5 (9 download)
Download or read book III-nitride Nanostructures for Optoelectronic and Magnetic Functionalities written by Thomas F. Kent and published by . This book was released on 2014 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the last two decades, group III-nitride compound semiconductor materials have revolutionized modern optoelectronics and high frequency devices. In this work, III-nitride based compound semiconductor nanostructures with tailor-made optoelectronic and magnetic functionalities are investigated. The first research vector concerns design, synthesis and characterization of novel ferromagnetic materials based on III-nitrides involving manipulation of magnetic dopants as well as heteroepitaxy of ferromagnetic materials. Synthesis of III-nitride-GdN epitaxial, ferromagnetic nanocomposites is developed using the technique of plasma assisted molecular beam epitaxy. Magnetic, structural and optical characteristics of these materials are tailored to yield nanocomposites which preserve the structural and semiconducting characteristics of GaN while integrating the ferromagnetic compound GdN. In the second part of this work, the growth, characterization and development of self-assembled III-nitride nanowire based ultraviolet light emitting diodes is explored. These devices are formed by a novel heterostructure which utilizes synthetic gradients in dipole moment per unit volume to mitigate many of the shortcomings of traditional thin film wide bandgap light emitting diode (LED) device designs for deep ultraviolet wavelengths. The optical and electronic characteristics of these devices are investigated by a number of spectroscopic methods. Combination of this heterostructure with the epitaxy of GdN on III-nitrides is found to yield a unique electrical device which allows electrical modulation of narrow linewidth, ultraviolet Gd intra-f-shell fluorescence at significantly lower voltages compared to existing technology. During the course of this work, a number of unique scientific instruments were developed to aid research efforts in the Myers group. The design, construction and operation of a wide spectral bandwidth, ultrafast semiconductor photoluminescence characterization system, a spectroscopic probe station for high throughput measurements of deep ultraviolet LED's and a modified closed cycle He cryostat for magnetic field dependent low level optoelectronic measurements is described. The dissertation closes with a discussion of various collaborative works of the author as well as a broad summary, conclusions and suggested future directions.
