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Surface Electronic Structure Of Si1105x1 Si111 3x 3 In And Ge1112x1 Studied With Angle Resolved Photoelectron Spectroscopy
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Book Synopsis Surface Electronic Structure of Si(110)5x1, Si(111) 3x 3 - In and Ge(111)2x1 Studied with Angle Resolved Photoelectron Spectroscopy by : Per Mårtensson
Download or read book Surface Electronic Structure of Si(110)5x1, Si(111) 3x 3 - In and Ge(111)2x1 Studied with Angle Resolved Photoelectron Spectroscopy written by Per Mårtensson and published by . This book was released on 1985 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Surface and Bulk Electronic Structure of Silicon Studied by Angle Resolved Photoelectron Spectroscopy by : Roger Uhrberg
Download or read book Surface and Bulk Electronic Structure of Silicon Studied by Angle Resolved Photoelectron Spectroscopy written by Roger Uhrberg and published by . This book was released on 1984 with total page 24 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Connecting Electronic Structure with Inter-atomic Potentials by : Jessica L. McChesney
Download or read book Connecting Electronic Structure with Inter-atomic Potentials written by Jessica L. McChesney and published by . This book was released on 2004 with total page 110 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Studies of the Electronic Structure of Some Clean and As-covered Semiconductor Surfaces Using Angle-resolved Photoelectron Spectroscopy by : Hua Qu
Download or read book Studies of the Electronic Structure of Some Clean and As-covered Semiconductor Surfaces Using Angle-resolved Photoelectron Spectroscopy written by Hua Qu and published by . This book was released on 1991 with total page 32 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure of Semiconductor Surfaces, Clean and with Adsorbed Overlayers, Studied with Angle-resolved Photoemission by : Per Mårtensson
Download or read book Electronic Structure of Semiconductor Surfaces, Clean and with Adsorbed Overlayers, Studied with Angle-resolved Photoemission written by Per Mårtensson and published by . This book was released on 1986 with total page 60 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Unusual Aspects of Surface Electronic Structure Studied with Photoelectron Spectroscopy by : Matthias Hengsberger
Download or read book Unusual Aspects of Surface Electronic Structure Studied with Photoelectron Spectroscopy written by Matthias Hengsberger and published by . This book was released on 2000 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces by : Dean E. Eastman
Download or read book Spectroscopic Studies of the Electronic Structure of Metal-Semiconductor and Vacuum-Semiconductor Interfaces written by Dean E. Eastman and published by . This book was released on 1980 with total page 37 pages. Available in PDF, EPUB and Kindle. Book excerpt: The electronic structure and properties of semiconductor interfaces including both vacuum-semiconductor and metal-semiconductor interfaces as well as relevant metal and semiconductor materials have been investigated under this contract. The emphasis has been on elucidating the electronic properties of these materials and their interfaces, e.g., metal-semiconductor Schottky barriers, which are of far reaching importance in such semiconductor devices as MOSFETS, CCD devices, photovoltaic devices, etc. Extensive studies of the electronic structure of semiconductor surfaces and interfaces and related metal surfaces have been performed as a function of surface preparation (include laser annealing), doping, thickness of adsorbed overlayers, etc. The principle technique used has been photoelectron spectroscopy (XPS and UPS - with an emphasis on angle-resolved studies using synchrotron radiation and yield spectroscopy); other techniques include electron energy loss spectroscopy, low energy electron diffraction and theoretical band structure methods. Major achievements of our research program includes world-leading contributions to: (1) the electronic structure of cleaned and annealed Si(111) surfaces; (2) accurate experimental determinations of electron energy vs momentum band dispersions E(k) of selected materials (such E(K) dispersions are of central importance in solid state physics in understanding the electronic, physical and chemical properties of materials); and (3) the development and application of surface core level spectroscopy, a promising new photoemission technique.
Book Synopsis Electronic Structure of the Clean and Hydrogen-chemisorbed Si(100)2x1 Surface Studied with Angle-resolved Photoemission by : Lars Johansson
Download or read book Electronic Structure of the Clean and Hydrogen-chemisorbed Si(100)2x1 Surface Studied with Angle-resolved Photoemission written by Lars Johansson and published by . This book was released on 1988 with total page 82 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure of CaF2/Si(111) by X-ray Photoelectron Spectroscopy by : Ramalingeswar Pandiri
Download or read book Electronic Structure of CaF2/Si(111) by X-ray Photoelectron Spectroscopy written by Ramalingeswar Pandiri and published by . This book was released on 1991 with total page 92 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structures of Novel Complex Materials Studied by Angle Resolved Photoemission Spectroscopy by : Zhongkai Liu
Download or read book Electronic Structures of Novel Complex Materials Studied by Angle Resolved Photoemission Spectroscopy written by Zhongkai Liu and published by . This book was released on 2014 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: Electronic Structure is the key factor for identifying new material or phases and understanding the underlying physics behind emergent phenomena. In the investigation of the electronic structures of novel complex materials, the angular resolved photoemission spectroscopy (ARPES) serves as a powerful tool. The thesis summarizes two of my graduate research projects, which both involves probing electronic structures and analyzing underlying physics on novel complex materials with state-of-the-art ARPES techniques: In the first part, I would summarize our investigation on the materials with non-trivial topology. I would start from our initial work on the three-dimensional topological insulators where we identified the characteristic surface states and verified that they are robust from perturbations. Following the line of search, we discovered three-dimensional topological insulators with other interesting properties, including the strongly inversion asymmetric topological insulator BiTeCl, and the strongly correlated topological Kondo insulator SmB6. We further extended our research to Na3Bi and Cd3As2, where we found them hosting a three-dimensional Dirac point and are first examples of topological Dirac semimetals, a three-dimensional analogue of graphene. In the second part of my thesis, I would discuss the ARPES study on the electron correlation level in the iron chalcogenide family Fe(Se, Te). For the parent compound FeTe, we discovered "peak-dip-hump" spectra with heavily renormalized quasiparticles in the low temperature antiferromagnetic state, characteristic of coherent polarons seen in other correlated materials. The increase of Se ratio leads to an incoherent to coherent crossover in the electronic structure. Furthermore, the reduction of the electronic correlation in Fe(Se, Te) evolves in an orbital-dependent way, where the dxy orbital is influenced most significantly. Finally, in comparison with other members of iron chalcogenides (AxFe2-ySe2, A=K, Rb, Cs; and monolayer FeSe film on SrTiO3 substrate), we found the strong correlation behavior is universal in all iron chalcogenides. Specifically, the dxy orbital is always heavily renormalized and loses spectral weight upon raising temperature. Several physical models of the orbital dependent physics and electron correlations would be discussed.
Book Synopsis Studies of the Surface Electronic Structure and Chemistry of Si, Ge, and Other Solids by : W. E. Spicer
Download or read book Studies of the Surface Electronic Structure and Chemistry of Si, Ge, and Other Solids written by W. E. Spicer and published by . This book was released on 1978 with total page 9 pages. Available in PDF, EPUB and Kindle. Book excerpt: The surface electronic structure and certain aspects of the surface chemistry of amorphous and crystalline Si and Ge as well as crystalline SrTiO3 ZnO, and Sn have been studied using photoemission spectroscopy and Auger electron spectroscopy. By examining the surface, valence, and core states a more detailed picture of the surface electronic structure and chemistry could be obtained than has been generally possible in the past. Of particular importance has been the use of Stanford Synchrotron Radiation Laboratory which has provided continuously tunable radiation from 10 to 300 eV. Using this capability, it is possible, for example, to examine the surface states and core levels as a gas is adsorbed. It has been found possible to adsorb oxygen on Si in such a way that the surface states are removed but the usual shift in the Si 2p core level associated with chemical bonding is missing. This indicates a new type of 'covalent' bonding, previously unexpected. These results can give new insight into the kinetics of oxygen takeup on Si.
Book Synopsis Study of the Electronic Surface States of III-V Compounds and Silicon by : W. E. Spicer
Download or read book Study of the Electronic Surface States of III-V Compounds and Silicon written by W. E. Spicer and published by . This book was released on 1982 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: The work performed over the four year span of this contract comprises a large body of research. Its results are summarized in this document. The technical problem was to study the electronic and atomic structure of the surfaces of several semiconductors. The III-V compound semiconductors, especially GaAs, InP, and GaSb, and the column IV semiconductor Si were emphasized, but some work on GE and HgCdTe was also performed. The predominant methodology used was laboratory experimentation: photoemission spectroscopy excited by synchrotron radiation was utilized heavily, along with angle-resolved photoemission, photoemission excited by conventional ultraviolet and x-ray illumination, low energy electron diffraction, Auger electron spectroscopy, contact potential difference (Kelvin probe) measurements, as well as other techniques which are detailed in the publications.
Book Synopsis Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors by : Leyla Colakerol
Download or read book Electronic Structure and Quantized Surface Electron Accumulation of Narrow Band Gap Semiconductors written by Leyla Colakerol and published by . This book was released on 2009 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: Narrow band gap semiconductors play a crucial role in thin film photovoltaic cells and optoelectronics devices operating in the infrared region of visible spectrum. The interactions between the valence and conduction bands due to the narrow band gap have a big influence on the electronic structure and the device performance of these materials. The surface and bulk electronic properties of narrow band gap semiconductors were investigated using angle resolved photoelectron spectroscopy (ARPES), x-ray absorption spectroscopy and x-ray emission spectroscopy. Comparisons were made between the experimental results and density functional theory band structure calculations. Intrinsic electron accumulation near the surface of clean InN was directly observed by ARPES. The accumulation layer is discussed in terms of the bulk Fermi level (E F) lying below the pinned surface E F, with a confining potential formed normal to surface due to the downward band bending facilitated by donor type surface states or nitrogen vacancies. Various spectroscopic techniques were used to measure this band bending. The energy of the Fermi level and the size of the Fermi surface for these quantum well states could be controlled by varying the method of surface preparation and by the adsorption of potassium on the surface. Intermixing between the heavy and light hole valence bands in the intrinsic quantum well potential associated with the surface electron accumulation layer results in an inverted band structure, with the valence band maximum lying away from the Brillouin zone center. Similarly, the electronic band structure of CdO was investigated and quantized electron subbands were observed above the valence band maximum. The origin of the accumulation layer is discussed in terms of the bulk band structure of CdO calculated using quasi particle corrected density functional theory. High electron density at the surface of these materials provides new opportunities for potential device structures such as sensors, high frequency transmitters and field effect transistors. Therefore the study of their near surface electron accumulation and electronic structure is of importance in understanding the properties of these materials and discovering new application areas.
Book Synopsis The Elucidation of the Mechanism of the Initial Stages of Si(111)-7x7 Oxidation Using Scanning Tunneling Microscopy by : Ph Avouris
Download or read book The Elucidation of the Mechanism of the Initial Stages of Si(111)-7x7 Oxidation Using Scanning Tunneling Microscopy written by Ph Avouris and published by . This book was released on 1992 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: The capability of the scanning tunneling microscopy (STM) and spectroscopy (STS) to probe the topography and electronic structure of surfaces and adsorbate layers with atomic resoLution makes it a powerful took in the study of surface chemistry. Here we use STM, STS, ultraviolet photoemission spectroscopy (LIPS) and electronic structure calculations to study the long-standing problem involving the nature of the initial stages of the oxidation of silicon. There have been a large number of studies on this issue utilizing a great variety of techniques. However, not only is the mechanism of oxidation still unclear, but there is not even agreement on what kind of product(s) is formed. Several different configurations have been proposed for the oxygen-containing sites in the early stages of the reaction. They involve oxygen atoms saturating the dangling-bonds of top-layer Si atoms, oxygen atoms inserted in back-bonds but leaving the dangling-bonds intact, or molecular forms of oxygen attached to surface atoms or bridging two surface Si atoms.
Book Synopsis Electronic Structure of Solids b by : A. Goldmann
Download or read book Electronic Structure of Solids b written by A. Goldmann and published by Springer. This book was released on 1994-12-19 with total page 327 pages. Available in PDF, EPUB and Kindle. Book excerpt: The collection of tables and diagrams given in this volume is a contribution to a larger programme aiming at a critical, and as comprehensive as possible, tabulation of electronic structure information obtained by electron and photon spectroscopy. No such collection of photoelectron spectra and related data exists at present, and the editors hope to fill a need of both experimentalists and theoreticians in various fields of solid state research. Besides the photoelectron results, also a limited set of other data (like lattice constants and work functions) useful in the context of band structure information are offered.
