Study Of Wide Bandgap Semiconductor Nanowire Field Effect Transistor And Resonant Tunneling Device

Download Study Of Wide Bandgap Semiconductor Nanowire Field Effect Transistor And Resonant Tunneling Device full books in PDF, epub, and Kindle. Read online Study Of Wide Bandgap Semiconductor Nanowire Field Effect Transistor And Resonant Tunneling Device ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!

Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors

Author : Mengqi Fu
Publisher : Springer
ISBN 13 : 9789811334436
Total Pages : 0 pages
Book Rating : 4.3/5 (344 download)

DOWNLOAD NOW!

Book Synopsis Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by : Mengqi Fu

Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-12-12 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.

Semiconductor Nanowires

Author : J Arbiol
Publisher : Elsevier
ISBN 13 : 1782422633
Total Pages : 573 pages
Book Rating : 4.7/5 (824 download)

DOWNLOAD NOW!

Book Synopsis Semiconductor Nanowires by : J Arbiol

Download or read book Semiconductor Nanowires written by J Arbiol and published by Elsevier. This book was released on 2015-03-31 with total page 573 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires promise to provide the building blocks for a new generation of nanoscale electronic and optoelectronic devices. Semiconductor Nanowires: Materials, Synthesis, Characterization and Applications covers advanced materials for nanowires, the growth and synthesis of semiconductor nanowires—including methods such as solution growth, MOVPE, MBE, and self-organization. Characterizing the properties of semiconductor nanowires is covered in chapters describing studies using TEM, SPM, and Raman scattering. Applications of semiconductor nanowires are discussed in chapters focusing on solar cells, battery electrodes, sensors, optoelectronics and biology. - Explores a selection of advanced materials for semiconductor nanowires - Outlines key techniques for the property assessment and characterization of semiconductor nanowires - Covers a broad range of applications across a number of fields

Fundamentals of III-V Semiconductor MOSFETs

Author : Serge Oktyabrsky
Publisher : Springer Science & Business Media
ISBN 13 : 1441915478
Total Pages : 451 pages
Book Rating : 4.4/5 (419 download)

DOWNLOAD NOW!

Book Synopsis Fundamentals of III-V Semiconductor MOSFETs by : Serge Oktyabrsky

Download or read book Fundamentals of III-V Semiconductor MOSFETs written by Serge Oktyabrsky and published by Springer Science & Business Media. This book was released on 2010-03-16 with total page 451 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of III-V Semiconductor MOSFETs presents the fundamentals and current status of research of compound semiconductor metal-oxide-semiconductor field-effect transistors (MOSFETs) that are envisioned as a future replacement of silicon in digital circuits. The material covered begins with a review of specific properties of III-V semiconductors and available technologies making them attractive to MOSFET technology, such as band-engineered heterostructures, effect of strain, nanoscale control during epitaxial growth. Due to the lack of thermodynamically stable native oxides on III-V's (such as SiO2 on Si), high-k oxides are the natural choice of dielectrics for III-V MOSFETs. The key challenge of the III-V MOSFET technology is a high-quality, thermodynamically stable gate dielectric that passivates the interface states, similar to SiO2 on Si. Several chapters give a detailed description of materials science and electronic behavior of various dielectrics and related interfaces, as well as physics of fabricated devices and MOSFET fabrication technologies. Topics also include recent progress and understanding of various materials systems; specific issues for electrical measurement of gate stacks and FETs with low and wide bandgap channels and high interface trap density; possible paths of integration of different semiconductor materials on Si platform.

Advanced Nanoelectronics

Author : Muhammad Mustafa Hussain
Publisher : John Wiley & Sons
ISBN 13 : 352734358X
Total Pages : 284 pages
Book Rating : 4.5/5 (273 download)

DOWNLOAD NOW!

Book Synopsis Advanced Nanoelectronics by : Muhammad Mustafa Hussain

Download or read book Advanced Nanoelectronics written by Muhammad Mustafa Hussain and published by John Wiley & Sons. This book was released on 2019-01-04 with total page 284 pages. Available in PDF, EPUB and Kindle. Book excerpt: Brings novel insights to a vibrant research area with high application potential?covering materials, physics, architecture, and integration aspects of future generation CMOS electronics technology Over the last four decades we have seen tremendous growth in semiconductor electronics. This growth has been fueled by the matured complementary metal oxide semiconductor (CMOS) technology. This comprehensive book captures the novel device options in CMOS technology that can be realized using non-silicon semiconductors. It discusses germanium, III-V materials, carbon nanotubes and graphene as semiconducting materials for three-dimensional field-effect transistors. It also covers non-conventional materials such as nanowires and nanotubes. Additionally, nanoelectromechanical switches-based mechanical relays and wide bandgap semiconductor-based terahertz electronics are reviewed as essential add-on electronics for enhanced communication and computational capabilities. Advanced Nanoelectronics: Post-Silicon Materials and Devices begins with a discussion of the future of CMOS. It continues with comprehensive chapter coverage of: nanowire field effect transistors; two-dimensional materials for electronic applications; the challenges and breakthroughs of the integration of germanium into modern CMOS; carbon nanotube logic technology; tunnel field effect transistors; energy efficient computing with negative capacitance; spin-based devices for logic, memory and non-Boolean architectures; and terahertz properties and applications of GaN. -Puts forward novel approaches for future, state-of-the-art, nanoelectronic devices -Discusses emerging materials and architectures such as alternate channel material like germanium, gallium nitride, 1D nanowires/tubes, 2D graphene, and other dichalcogenide materials and ferroelectrics -Examines new physics such as spintronics, negative capacitance, quantum computing, and 3D-IC technology -Brings together the latest developments in the field for easy reference -Enables academic and R&D researchers in semiconductors to "think outside the box" and explore beyond silica An important resource for future generation CMOS electronics technology, Advanced Nanoelectronics: Post-Silicon Materials and Devices will appeal to materials scientists, semiconductor physicists, semiconductor industry, and electrical engineers.

Physical Limitations of Semiconductor Devices

Author : Vladislav A. Vashchenko
Publisher : Springer Science & Business Media
ISBN 13 : 0387745149
Total Pages : 337 pages
Book Rating : 4.3/5 (877 download)

DOWNLOAD NOW!

Book Synopsis Physical Limitations of Semiconductor Devices by : Vladislav A. Vashchenko

Download or read book Physical Limitations of Semiconductor Devices written by Vladislav A. Vashchenko and published by Springer Science & Business Media. This book was released on 2008-03-22 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: Providing an important link between the theoretical knowledge in the field of non-linier physics and practical application problems in microelectronics, the purpose of the book is popularization of the physical approach for reliability assurance. Another unique aspect of the book is the coverage given to the role of local structural defects, their mathematical description, and their impact on the reliability of the semiconductor devices.

Solid State Properties

Author : Mildred Dresselhaus
Publisher : Springer
ISBN 13 : 3662559226
Total Pages : 521 pages
Book Rating : 4.6/5 (625 download)

DOWNLOAD NOW!

Book Synopsis Solid State Properties by : Mildred Dresselhaus

Download or read book Solid State Properties written by Mildred Dresselhaus and published by Springer. This book was released on 2018-01-17 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book fills a gap between many of the basic solid state physics and materials sciencebooks that are currently available. It is written for a mixed audience of electricalengineering and applied physics students who have some knowledge of elementaryundergraduate quantum mechanics and statistical mechanics. This book, based on asuccessful course taught at MIT, is divided pedagogically into three parts: (I) ElectronicStructure, (II) Transport Properties, and (III) Optical Properties. Each topic is explainedin the context of bulk materials and then extended to low-dimensional materials whereapplicable. Problem sets review the content of each chapter to help students to understandthe material described in each of the chapters more deeply and to prepare them to masterthe next chapters.

Tunneling Field Effect Transistor Technology

Author : Lining Zhang
Publisher : Springer
ISBN 13 : 3319316532
Total Pages : 217 pages
Book Rating : 4.3/5 (193 download)

DOWNLOAD NOW!

Book Synopsis Tunneling Field Effect Transistor Technology by : Lining Zhang

Download or read book Tunneling Field Effect Transistor Technology written by Lining Zhang and published by Springer. This book was released on 2016-04-09 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to the state-of-the art in tunneling field effect transistors (TFETs). Readers will learn the TFETs physics from advanced atomistic simulations, the TFETs fabrication process and the important roles that TFETs will play in enabling integrated circuit designs for power efficiency.

The Physics of Semiconductor Devices

Author : R. K. Sharma
Publisher : Springer
ISBN 13 : 3319976044
Total Pages : 1260 pages
Book Rating : 4.3/5 (199 download)

DOWNLOAD NOW!

Book Synopsis The Physics of Semiconductor Devices by : R. K. Sharma

Download or read book The Physics of Semiconductor Devices written by R. K. Sharma and published by Springer. This book was released on 2019-01-31 with total page 1260 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book disseminates the current knowledge of semiconductor physics and its applications across the scientific community. It is based on a biennial workshop that provides the participating research groups with a stimulating platform for interaction and collaboration with colleagues from the same scientific community. The book discusses the latest developments in the field of III-nitrides; materials & devices, compound semiconductors, VLSI technology, optoelectronics, sensors, photovoltaics, crystal growth, epitaxy and characterization, graphene and other 2D materials and organic semiconductors.

Strain Effect in Semiconductors

Author : Yongke Sun
Publisher : Springer Science & Business Media
ISBN 13 : 1441905529
Total Pages : 353 pages
Book Rating : 4.4/5 (419 download)

DOWNLOAD NOW!

Book Synopsis Strain Effect in Semiconductors by : Yongke Sun

Download or read book Strain Effect in Semiconductors written by Yongke Sun and published by Springer Science & Business Media. This book was released on 2009-11-14 with total page 353 pages. Available in PDF, EPUB and Kindle. Book excerpt: Strain Effect in Semiconductors: Theory and Device Applications presents the fundamentals and applications of strain in semiconductors and semiconductor devices that is relevant for strain-enhanced advanced CMOS technology and strain-based piezoresistive MEMS transducers. Discusses relevant applications of strain while also focusing on the fundamental physics pertaining to bulk, planar, and scaled nano-devices. Hence, this book is relevant for current strained Si logic technology as well as for understanding the physics and scaling for future strained nano-scale devices.

Electrical & Electronics Abstracts

Author :
Publisher :
ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)

DOWNLOAD NOW!

Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Functionalization of Graphene

Author : Vasilios Georgakilas
Publisher : John Wiley & Sons
ISBN 13 : 352767277X
Total Pages : 507 pages
Book Rating : 4.5/5 (276 download)

DOWNLOAD NOW!

Book Synopsis Functionalization of Graphene by : Vasilios Georgakilas

Download or read book Functionalization of Graphene written by Vasilios Georgakilas and published by John Wiley & Sons. This book was released on 2014-04-03 with total page 507 pages. Available in PDF, EPUB and Kindle. Book excerpt: All set to become the standard reference on the topic, this book covers the most important procedures for chemical functionalization, making it an indispensable resource for all chemists, physicists, materials scientists and engineers entering or already working in the field. Expert authors share their knowledge on a wide range of different functional groups, including organic functional groups, hydrogen, halogen, nanoparticles and polymers.

Polarization Effects in Semiconductors

Author : Debdeep Jena
Publisher : Springer Science & Business Media
ISBN 13 : 0387368310
Total Pages : 523 pages
Book Rating : 4.3/5 (873 download)

DOWNLOAD NOW!

Book Synopsis Polarization Effects in Semiconductors by : Debdeep Jena

Download or read book Polarization Effects in Semiconductors written by Debdeep Jena and published by Springer Science & Business Media. This book was released on 2008 with total page 523 pages. Available in PDF, EPUB and Kindle. Book excerpt: Polarization Effects in Semiconductors: From Ab Initio Theory to Device Applications presents the latest understanding of the solid state physics, electronic implications and practical applications of the unique spontaneous or pyro-electric polarization charge of wurtzite compound semiconductors, and associated piezo-electric effects in strained thin film heterostructures. These heterostructures are used in wide band gap semiconductor based sensors, in addition to various electronic and opto-electronic semiconductor devices. The book covers the ab initio theory of polarization in cubic and hexagonal semiconductors, growth of thin film GaN, GaN/AlGaN GaAlN/ AlGaInN, and other nitrides, and SiC heterostructures. It discusses the effects of spontaneous and piezoelectric polarization on band diagrams and electronic properties of abrupt and compositionally graded heterostructures, electronic characterization of polarization-induced charge distributions by scanning-probe spectroscopies, and gauge factors and strain effects. In addition, polarization in extended defects, piezo-electric strain/charge engineering, and application to device design and processing are covered. The effects of polarization on the fundamental electron transport properties, and on the basic optical transitions are described. The crucial role of polarization in devices such as high electron mobility transistors (HEMTs) and light-emitting diodes (LEDs) is covered. The chapters are authored by professors and researchers in the fields of physics, applied physics and electrical engineering, who worked for 5 years under the "Polarization Effects in Semiconductors" DOD funded Multi Disciplinary University Research Initiative. This book will be of interest to graduate students and researchers working in the field of wide-bandgap semiconductor physics and their device applications. It will also be useful for practicing engineers in the field of wide-bandgap semiconductor device research and development.

Atomic Layer Deposition for Semiconductors

Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)

DOWNLOAD NOW!

Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Ultra-wide Bandgap Semiconductor Materials

Author : Meiyong Liao
Publisher : Elsevier
ISBN 13 : 0128172568
Total Pages : 506 pages
Book Rating : 4.1/5 (281 download)

DOWNLOAD NOW!

Book Synopsis Ultra-wide Bandgap Semiconductor Materials by : Meiyong Liao

Download or read book Ultra-wide Bandgap Semiconductor Materials written by Meiyong Liao and published by Elsevier. This book was released on 2019-06-18 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ultra-wide Bandgap Semiconductors (UWBG) covers the most recent progress in UWBG materials, including sections on high-Al-content AlGaN, diamond, B-Ga2O3, and boron nitrides. The coverage of these materials is comprehensive, addressing materials growth, physics properties, doping, device design, fabrication and performance. The most relevant and important applications are covered, including power electronics, RF electronics and DUV optoelectronics. There is also a chapter on novel structures based on UWBG, such as the heterojunctions, the low-dimensional structures, and their devices. This book is ideal for materials scientists and engineers in academia and R&D searching for materials superior to silicon carbide and gallium nitride. - Provides a one-stop resource on the most promising ultra-wide bandgap semiconducting materials, including high-Al-content AlGaN, diamond, ß-Ga2O3, boron nitrides, and low-dimensional materials - Presents comprehensive coverage, from materials growth and properties, to device design, fabrication and performance - Features the most relevant applications, including power electronics, RF electronics and DUV optoelectronics

Compact Modeling

Author : Gennady Gildenblat
Publisher : Springer Science & Business Media
ISBN 13 : 9048186145
Total Pages : 531 pages
Book Rating : 4.0/5 (481 download)

DOWNLOAD NOW!

Book Synopsis Compact Modeling by : Gennady Gildenblat

Download or read book Compact Modeling written by Gennady Gildenblat and published by Springer Science & Business Media. This book was released on 2010-06-22 with total page 531 pages. Available in PDF, EPUB and Kindle. Book excerpt: Most of the recent texts on compact modeling are limited to a particular class of semiconductor devices and do not provide comprehensive coverage of the field. Having a single comprehensive reference for the compact models of most commonly used semiconductor devices (both active and passive) represents a significant advantage for the reader. Indeed, several kinds of semiconductor devices are routinely encountered in a single IC design or in a single modeling support group. Compact Modeling includes mostly the material that after several years of IC design applications has been found both theoretically sound and practically significant. Assigning the individual chapters to the groups responsible for the definitive work on the subject assures the highest possible degree of expertise on each of the covered models.

Nanostructure Science and Technology

Author : Richard W. Siegel
Publisher : Springer Science & Business Media
ISBN 13 : 9780792358541
Total Pages : 378 pages
Book Rating : 4.3/5 (585 download)

DOWNLOAD NOW!

Book Synopsis Nanostructure Science and Technology by : Richard W. Siegel

Download or read book Nanostructure Science and Technology written by Richard W. Siegel and published by Springer Science & Business Media. This book was released on 1999-09-30 with total page 378 pages. Available in PDF, EPUB and Kindle. Book excerpt: Timely information on scientific and engineering developments occurring in laboratories around the world provides critical input to maintaining the economic and technological strength of the United States. Moreover, sharing this information quickly with other countries can greatly enhance the productivity of scientists and engineers. These are some of the reasons why the National Science Foundation (NSF) has been involved in funding science and technology assessments comparing the United States and foreign countries since the early 1980s. A substantial number of these studies have been conducted by the World Technology Evaluation Center (WTEC) managed by Loyola College through a cooperative agreement with NSF. The National Science and Technology Council (NSTC), Committee on Technology's Interagency Working Group on NanoScience, Engineering and Technology (CT/IWGN) worked with WTEC to develop the scope of this Nanostucture Science and Technology report in an effort to develop a baseline of understanding for how to strategically make Federal nanoscale R&D investments in the coming years. The purpose of the NSTC/WTEC activity is to assess R&D efforts in other countries in specific areas of technology, to compare these efforts and their results to U. S. research in the same areas, and to identify opportunities for international collaboration in precompetitive research. Many U. S. organizations support substantial data gathering and analysis efforts focusing on nations such as Japan. But often the results of these studies are not widely available. At the same time, government and privately sponsored studies that are in the public domain tend to be "input" studies.

Wide Bandgap Semiconductors

Author : Kiyoshi Takahashi
Publisher : Springer Science & Business Media
ISBN 13 : 3540472355
Total Pages : 481 pages
Book Rating : 4.5/5 (44 download)

DOWNLOAD NOW!

Book Synopsis Wide Bandgap Semiconductors by : Kiyoshi Takahashi

Download or read book Wide Bandgap Semiconductors written by Kiyoshi Takahashi and published by Springer Science & Business Media. This book was released on 2007-04-12 with total page 481 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book offers a comprehensive overview of the development, current state, and future prospects of wide bandgap semiconductor materials and related optoelectronics devices. With 901 references, 333 figures and 21 tables, this book will serve as a one-stop source of knowledge on wide bandgap semiconductors and related optoelectronics devices.