Molecular Beam Epitaxy

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Author :
Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

III–V Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642676111
Total Pages : 171 pages
Book Rating : 4.6/5 (426 download)

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Book Synopsis III–V Semiconductors by : Herbert C. Freyhardt

Download or read book III–V Semiconductors written by Herbert C. Freyhardt and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 171 pages. Available in PDF, EPUB and Kindle. Book excerpt: Springer-Verlag, Berlin Heidelberg, in conjunction with Springer-Verlag New York, is pleased to announce a new series: CRYSTALS Growth, Properties, and Applications The series presents critical reviews of recent developments in the field of crystal growth, properties, and applications. A substantial portion of the new series will be devoted to the theory, mechanisms, and techniques of crystal growth. Occasionally, clear, concise, complete, and tested instructions for growing crystals will be published, particularly in the case of methods and procedures that promise to have general applicability. Responding to the ever-increasing need for crystal substances in research and industry, appropriate space will be devoted to methods of crystal characterization and analysis in the broadest sense, even though reproducible results may be expected only when structures, microstructures, and composition are really known. Relations among procedures, properties, and the morphology of crystals will also be treated with reference to specific aspects of their practical application. In this way the series will bridge the gaps between the needs of research and industry, the pos sibilities and limitations of crystal growth, and the properties of crystals. Reports on the broad spectrum of new applications - in electronics, laser tech nology, and nonlinear optics, to name only a few - will be of interest not only to industry and technology, but to wider areas of applied physics as well and to solid state physics in particular. In response to the growing interest in and importance of organic crystals and polymers, they will also be treated.

Molecular Beam Epitaxy

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Author :
Publisher : OUP Oxford
ISBN 13 : 0191061166
Total Pages : 529 pages
Book Rating : 4.1/5 (91 download)

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Book Synopsis Molecular Beam Epitaxy by : John Orton

Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Research in Progress

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Publisher :
ISBN 13 :
Total Pages : 834 pages
Book Rating : 4.:/5 (334 download)

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Book Synopsis Research in Progress by :

Download or read book Research in Progress written by and published by . This book was released on 1978 with total page 834 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference

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Publisher : World Scientific
ISBN 13 : 9814552399
Total Pages : 818 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference by : J Pollman

Download or read book Formation Of Semiconductor Interfaces - Proceedings Of The 4th International Conference written by J Pollman and published by World Scientific. This book was released on 1994-06-09 with total page 818 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor interfaces are of paramount importance in micro, nano- and optoelectronics. Basic as well as applied research on such systems is therefore of extremely high current interest. To meet the continuous need for a better understanding of semiconductor interfaces with respect to both their fundamental physical and chemical properties as well as their applications in modern opto- and microelectronics, the series of international conferences on the formation of semiconductor interfaces was begun. The fourth conference of the series held in Jülich addresses as main topics: clean semiconductor surfaces; adsorbates at semiconductor surfaces; metal-semiconductor, insulator-semiconductor and semiconductor-semiconductor interfaces; devices and wet chemical processes. The 12 invited lectures assess the present status of the research in important areas and about 180 contributed papers describe most recent achievements in the field.

Advances in Materials, Processing and Devices in III-V Compound Semiconductors: Volume 144

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Publisher : Mrs Proceedings
ISBN 13 :
Total Pages : 758 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Advances in Materials, Processing and Devices in III-V Compound Semiconductors: Volume 144 by : Devendra K. Sadana

Download or read book Advances in Materials, Processing and Devices in III-V Compound Semiconductors: Volume 144 written by Devendra K. Sadana and published by Mrs Proceedings. This book was released on 1989-11-20 with total page 758 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.

Scientific and Technical Aerospace Reports

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Publisher :
ISBN 13 :
Total Pages : 702 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 702 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific Information Bulletin

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Publisher :
ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific Information Bulletin by :

Download or read book Scientific Information Bulletin written by and published by . This book was released on 1992 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Control of Semiconductor Interfaces

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Publisher : Elsevier
ISBN 13 : 1483290484
Total Pages : 600 pages
Book Rating : 4.4/5 (832 download)

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Book Synopsis Control of Semiconductor Interfaces by : I. Ohdomari

Download or read book Control of Semiconductor Interfaces written by I. Ohdomari and published by Elsevier. This book was released on 2017-05-03 with total page 600 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses exclusively on control of interfacial properties and structures for semiconductor device applications from the point of view of improving and developing novel electrical properties. The following topics are covered: metal-semiconductors, semiconductor hetero-interfaces, characterization, semiconducting new materials, insulator-semiconductor, interfaces in device, control of interface formation, control of interface properties, contact metallization. A variety of up-to-date research topics such as atomic layer epitaxy, atomic layer passivation, atomic scale characterization including STM and SR techniques, single ion implementation, self-organization crystal growth, in situ measurements for process control and extremely high-spatial resolution analysis techniques, are also included. Furthermore it bridges the macroscopic, mesoscopic, and atomic-scale regimes of semicondutor interfaces, describing the state of the art in forming, controlling and characterizating unique semiconductor interfaces, which will be of practical importance in advanced devices. Intended for both technologists who require an up-to-date assessment of methods for interface formation, processing and characterization, and solid state researchers who desire the latest developments in understanding the basic mechanisms of interface physics, chemistry and electronics, this book will be a welcome addition to the existing literature.

Physics and Technology of High-k Materials 9

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Publisher : The Electrochemical Society
ISBN 13 : 1607682575
Total Pages : 504 pages
Book Rating : 4.6/5 (76 download)

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Book Synopsis Physics and Technology of High-k Materials 9 by : S. Kar

Download or read book Physics and Technology of High-k Materials 9 written by S. Kar and published by The Electrochemical Society. This book was released on 2011 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Materials and Molecular Research Division Annual Report

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Publisher :
ISBN 13 :
Total Pages : 340 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Materials and Molecular Research Division Annual Report by : Lawrence Berkeley Laboratory. Materials and Molecular Research Division

Download or read book Materials and Molecular Research Division Annual Report written by Lawrence Berkeley Laboratory. Materials and Molecular Research Division and published by . This book was released on 1986 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington

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Author :
Publisher : National Academies
ISBN 13 :
Total Pages : 320 pages
Book Rating : 4.1/5 (224 download)

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Book Synopsis Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington by :

Download or read book Coopertive Research Associateships Tenable at the Naval Research Laboratory, Washington written by and published by National Academies. This book was released on 1997 with total page 320 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Atomic Scale Images of Acceptors in III-V Semiconductors

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Author :
Publisher : Universitätsverlag Göttingen
ISBN 13 : 3940344141
Total Pages : 189 pages
Book Rating : 4.9/5 (43 download)

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Book Synopsis Atomic Scale Images of Acceptors in III-V Semiconductors by : Sebastian Loth

Download or read book Atomic Scale Images of Acceptors in III-V Semiconductors written by Sebastian Loth and published by Universitätsverlag Göttingen. This book was released on 2008 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Applied RHEED

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Publisher : Springer Science & Business Media
ISBN 13 : 9783540651994
Total Pages : 240 pages
Book Rating : 4.6/5 (519 download)

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Book Synopsis Applied RHEED by : Wolfgang Braun

Download or read book Applied RHEED written by Wolfgang Braun and published by Springer Science & Business Media. This book was released on 1999-04-16 with total page 240 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book describes RHEED (reflection high-energy electron diffraction) used as a tool for crystal growth. New methods using RHEED to characterize surfaces and interfaces during crystal growth by MBE (molecular beam epitaxy) are presented. Special emphasis is put on RHEED intensity oscillations, segregation phenomena, electron energy-loss spectroscopy and RHEED with rotating substrates.

Advances in III-V Semiconductor Nanowires and Nanodevices

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Publisher : Bentham Science Publishers
ISBN 13 : 1608050521
Total Pages : 186 pages
Book Rating : 4.6/5 (8 download)

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Book Synopsis Advances in III-V Semiconductor Nanowires and Nanodevices by : Jianye Li

Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by Bentham Science Publishers. This book was released on 2011-09-09 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest fo"

Cooperative Research Associateships, Post Doctoral Research Awards

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Publisher : National Academies
ISBN 13 :
Total Pages : 164 pages
Book Rating : 4.1/5 (12 download)

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Book Synopsis Cooperative Research Associateships, Post Doctoral Research Awards by :

Download or read book Cooperative Research Associateships, Post Doctoral Research Awards written by and published by National Academies. This book was released on 1990 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Beam Epitaxy

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Author :
Publisher : John Wiley & Sons
ISBN 13 : 111935501X
Total Pages : 510 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-04-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.