Semimagnetic Semiconductors and Diluted Magnetic Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1461537762
Total Pages : 278 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Semimagnetic Semiconductors and Diluted Magnetic Semiconductors by : M. Averous

Download or read book Semimagnetic Semiconductors and Diluted Magnetic Semiconductors written by M. Averous and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semimagnetic semiconductors (SMSC) and diluted magnetic semiconductors (DMS) have in the past decade attracted considerable attention because they confer many new physical properties on both bulk materials and heterostructures. These new effects are due either to exchange interactions between magnetic moments on magnetic ions, or to exchange interactions between magnetic moments and the spin of the charge carrier. These effects vary with the transition metal (Mn, Fe, Co) or rare earth (Eu, Gd, etc) used and thus provide a range of different situations. The field is very large (zero gap, small gap, wide gap), and the magnetic properties also are very rich (paramagnetic spin glass, antiferromagnetism). These materials are very convenient for studying the magnetism (the magnetism is diluted) or the superlattices (SL) with a continuous change from type II SL to type III SL. This Course attempted to provide a complete overview of the topic. The participants of this summer school held in Erice came from ten countries and were from various backgrounds and included theoreticians, experimentalists, physicists, and chemists. Consequently, an attempt was made to make the Course as thorough as possible, but at the same time attention was devoted to basic principles. The lecturers, drawn from all the groups in the world involved in the field, were asked to be very didactic in their presentation. After two introductory lectures, Dr.

Introduction to the Physics of Diluted Magnetic Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 3642158560
Total Pages : 484 pages
Book Rating : 4.6/5 (421 download)

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Book Synopsis Introduction to the Physics of Diluted Magnetic Semiconductors by : Jan A. Gaj

Download or read book Introduction to the Physics of Diluted Magnetic Semiconductors written by Jan A. Gaj and published by Springer Science & Business Media. This book was released on 2011-01-12 with total page 484 pages. Available in PDF, EPUB and Kindle. Book excerpt: As materials whose semiconducting properties are influenced by magnetic ions, DMSs are central to the emerging field of spintronics. This volume focuses both on basic physical mechanisms (e.g. carrier-ion and ion-ion interactions), and resulting phenomena.

First Principles Study of III-V Diluted Magnetic Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 178 pages
Book Rating : 4.:/5 (237 download)

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Book Synopsis First Principles Study of III-V Diluted Magnetic Semiconductors by : Jialei Xu

Download or read book First Principles Study of III-V Diluted Magnetic Semiconductors written by Jialei Xu and published by . This book was released on 2007 with total page 178 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Diluted Magnetic Semiconductors

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Publisher : World Scientific
ISBN 13 : 9789810201760
Total Pages : 682 pages
Book Rating : 4.2/5 (17 download)

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Book Synopsis Diluted Magnetic Semiconductors by : Mukesh Kumar Jain

Download or read book Diluted Magnetic Semiconductors written by Mukesh Kumar Jain and published by World Scientific. This book was released on 1991 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.

Study of Diluted Magnetic Semiconductors

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Publisher :
ISBN 13 :
Total Pages : 157 pages
Book Rating : 4.:/5 (731 download)

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Book Synopsis Study of Diluted Magnetic Semiconductors by : Zlatko Micković

Download or read book Study of Diluted Magnetic Semiconductors written by Zlatko Micković and published by . This book was released on 2010 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of Diluted Magnetic Semiconductors: the Case of Transition Metal Doped ZnO

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Publisher :
ISBN 13 :
Total Pages : 157 pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis Study of Diluted Magnetic Semiconductors: the Case of Transition Metal Doped ZnO by : Zlatko Micković

Download or read book Study of Diluted Magnetic Semiconductors: the Case of Transition Metal Doped ZnO written by Zlatko Micković and published by . This book was released on 2010 with total page 157 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Magnetism and Tunneling in Diluted Magnetic Semiconductor Structures

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Publisher :
ISBN 13 :
Total Pages : 131 pages
Book Rating : 4.:/5 (92 download)

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Book Synopsis Magnetism and Tunneling in Diluted Magnetic Semiconductor Structures by : Predrag Krstajić

Download or read book Magnetism and Tunneling in Diluted Magnetic Semiconductor Structures written by Predrag Krstajić and published by . This book was released on 2006 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of Magnetism in Dilute Magnetic Semiconductors Based on III-V Nitrides

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Publisher :
ISBN 13 :
Total Pages : 105 pages
Book Rating : 4.:/5 (272 download)

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Book Synopsis Study of Magnetism in Dilute Magnetic Semiconductors Based on III-V Nitrides by : Rekha Rajaram

Download or read book Study of Magnetism in Dilute Magnetic Semiconductors Based on III-V Nitrides written by Rekha Rajaram and published by . This book was released on 2007 with total page 105 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures

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Publisher : GRIN Verlag
ISBN 13 : 364026830X
Total Pages : 282 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures by : Martin Kneip

Download or read book Magnetization Dynamics in Diluted Magnetic Semiconductor Heterostructures written by Martin Kneip and published by GRIN Verlag. This book was released on 2009-02 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: Doctoral Thesis / Dissertation from the year 2008 in the subject Physics - Theoretical Physics, grade: sehr gut (1,0), University of Dortmund, 550 entries in the bibliography, language: English, abstract: In this thesis spin dynamics in (Zn, Mn)Se/(Zn, Be)Se and (Cd, Mn)Te/(Cd, Mg)Te DMS quantum well heterostructures with a type-I band alignment are studied, where the carriers are quantum confined. Especially the important role of free carriers in heating of the Mn-system, by its interaction with photoexcited carriers with excess kinetic energy, and in the cooling of the Mn-system in the presence of cold background carriers, provided by modulation doping, is established. The studies are separated in three chapters. In the fourth chapter of this thesis, new results on energy and spin transfer between free carriers and Mn-ion system are presented. Contributions of direct heating of the Mn-system by photocarriers and indirect heating via nonequilibrium phonons are distinguished and their competition is discussed. In the fifth chapter dynamics of spin-lattice relaxation of magnetic Mn-ions in DMS QW heterostructures is investigated and new experimental studies on (Zn, Mn)Se/(Zn, Be)Se heterostructures are shown. Crucial for spintronic devices is the ability to tune the spin relaxation time precisely, as the spin relaxation time is important in double respects. On the one hand spin polarization must be conserved over long times and distances, if the spin shall be processed or stored in a region, which is spatial separated from the spin-injector. Especially for the possibility of utilizing spins as quantum bits for quantum information processing, long spin polarization is needed. On the other hand short spin relaxation time is needed for fast switching between different spin-states. For instance semiconductor lasers can be switched off extremely fast by reorientation of spin. This very relevant topic is devoted the sixth chapter, before the thesis is summarized in the las

Nanostructured Metal Oxides and Devices

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Publisher : Springer Nature
ISBN 13 : 9811533148
Total Pages : 348 pages
Book Rating : 4.8/5 (115 download)

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Book Synopsis Nanostructured Metal Oxides and Devices by : M. K. Jayaraj

Download or read book Nanostructured Metal Oxides and Devices written by M. K. Jayaraj and published by Springer Nature. This book was released on 2020-04-16 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book primarily covers the fundamental science, synthesis, characterization, optoelectronic properties, and applications of metal oxide nanomaterials. It discusses the basic aspects of synthetic procedures and fabrication technologies, explains the related experimental techniques and also elaborates on the current status of nanostructured oxide materials and related devices. Two major aspects of metal oxide nanostructures – their optical and electrical properties – are described in detail. The first five chapters focus on the optical characteristics of semiconducting materials, especially metal oxides at the nanoscale. The following five chapters discuss the electrical properties observed in metal oxide-based semiconductors and the status quo of device-level developments in a variety of applications such as sensors, transistors, dilute magnetic semiconductors, and dielectric materials. The basic science and mechanism behind the optoelectronic phenomena are explained in detail, to aid readers interested in the structure–property symbiosis in semiconducting nanomaterials. In short, the book offers a valuable reference guide for researchers and academics in the areas of material science and semiconductor technology, especially nanophotonics and electronics.

Magnetic Correlations in the Diluted Magnetic Semiconductor Sn 1-x Mn X Te

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Publisher :
ISBN 13 :
Total Pages : 100 pages
Book Rating : 4.:/5 (18 download)

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Book Synopsis Magnetic Correlations in the Diluted Magnetic Semiconductor Sn 1-x Mn X Te by : Cornelis W. Vennix

Download or read book Magnetic Correlations in the Diluted Magnetic Semiconductor Sn 1-x Mn X Te written by Cornelis W. Vennix and published by . This book was released on 1993 with total page 100 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Diluted Magnetic Semiconductors

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Publisher : World Scientific
ISBN 13 : 9814506990
Total Pages : 677 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Diluted Magnetic Semiconductors by : Mukesh Jain

Download or read book Diluted Magnetic Semiconductors written by Mukesh Jain and published by World Scientific. This book was released on 1991-10-31 with total page 677 pages. Available in PDF, EPUB and Kindle. Book excerpt: This review volume presents both basic and applied aspects of diluted magnetic semiconductors (DMS). The term DMS applies generally to semiconductors in which a fraction of its constituent ions are replaced by magnetic ions. This book is only the second to review DMS materials. It presents a detailed treatment of the current state of knowledge of the established properties of DMS in the form of single crystals, quantum wells and superlattices. It also brings together recent work on new DMS materials and presents discussions on a wide range of possible DMS applications.

Electron Paramagnetic Studies of Diluted Magnetic Semiconductor Nanostructures

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Publisher :
ISBN 13 :
Total Pages : 314 pages
Book Rating : 4.:/5 (429 download)

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Book Synopsis Electron Paramagnetic Studies of Diluted Magnetic Semiconductor Nanostructures by : Luis A. Montes

Download or read book Electron Paramagnetic Studies of Diluted Magnetic Semiconductor Nanostructures written by Luis A. Montes and published by . This book was released on 1999 with total page 314 pages. Available in PDF, EPUB and Kindle. Book excerpt:

First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors

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Publisher : Nova Science Publishers
ISBN 13 : 9781536140774
Total Pages : 177 pages
Book Rating : 4.1/5 (47 download)

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Book Synopsis First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors by : Omar Mounkachi

Download or read book First-Principle Vs Experimental Design of Diluted Magnetic Semiconductors written by Omar Mounkachi and published by Nova Science Publishers. This book was released on 2018-10 with total page 177 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent discoveries have given rise to a new class of electronics known as "spin electronics or spintronics," which uses the electron spin rather than its charge to create polarized currents. Spintronics is currently experiencing an extraordinary development with the manufacture of nanoscale devices based on ferromagnetic materials and semiconductors. Their applications are numerous, ranging from recording, electronics, and optoelectronics to quantum information. Spintronics is a new generation of electronics that has brought and continues to bring a lot of progress to information storage; this is due to the discovery of new materials with new functionalities and multiple applications. The discovery of giant magnetoresistance (GMR) in 1988 by Albert Fert and Peter Grünberg (receiver of the Nobel Prize in Physics in 2007) is considered a starting point of spintronics. GMR is based on the variation of the electric current in the presence of a magnetic field. The spintronics has made important contributions to the miniaturization desired for electronics; it uses nanometric components for processing and storing information. However, the limits of miniaturization on a nanometric scale are known, and it is imperative to develop new ways and new materials to exceed those limits. The most desired properties for these materials are high spin polarization, modular magnetic properties by an electric field and a long lifetime of the spin polarization. Among the new promising materials, we cite the following: Diluted magnetic semiconductors, which give new magnetic properties of conventional semiconductors, functional oxides (including the semi-metals and multiferroic metals) and organic semiconductors. The main theoretical challenge in this area is to understand how the macroscopic magnetic behavior observed results from interactions of a large number of degrees of microscopic freedom. In these systems the disorder is an essential parameter of magnetic phenomena, and due to random locations of impurity atoms it can lead to a total physical difference from the observed absence. There has been considerable recent advances in the design of these materials as diluted magnetic semiconductors (DMS, or diluted magnetic semiconductors), and a number of semiconductors were investigated as II-VI group and III-V group doped compounds, with transition metals substituting their original cations. There are several different theoretical approaches to study these magnetic materials. The ab-initio approach starts from the Schrödinger equation to simulate a given material. Such an approach is essential to determine the parameters and microscopic properties of such a system. In this book, the authors analyzed the electronic structure of magnetic semiconductors diluted in the case of ZnO, GaN, SnO2, TiO2, MgH2, EuO and EuN doped RENs (RE=GdN, DyN and HoN). The authors focused on magnetic, optical and exchange mechanisms which control the ferromagnetism in these systems. The purpose of this book is to propose some ideas to answer the most important question in material science for semiconductor spintronics, primarily considering how room-temperature ferromagnetism in DMS can be realized. Additionally, the correlation between first principle and experimental design to see how properties of yet-to-be-synthesized materials can be predicted is discussed.

Dilute Magnetic Semiconducting (DMS) Materials

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Publisher : Materials Research Forum LLC
ISBN 13 : 194529177X
Total Pages : 203 pages
Book Rating : 4.9/5 (452 download)

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Book Synopsis Dilute Magnetic Semiconducting (DMS) Materials by : R. Saravanan

Download or read book Dilute Magnetic Semiconducting (DMS) Materials written by R. Saravanan and published by Materials Research Forum LLC. This book was released on 2018-08-25 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Diluted Magnetic Semiconductors (DMS) play a vital role in modern electronics industry. It is important to understand the fundamental properties of these materials in order to apply them to their full potential. This book presents an analysis of the charge density distribution and other properties of some silicon and germanium based diluted magnetic semiconductors. A quantitative analysis of the charge density distribution has been done in order to obtain measurements of the charges involved in the bonding, which are decisive for the physical and chemical properties of the DMS materials. Also, the local structures of the materials have been analyzed by studying their powder X-ray diffraction intensities. Analysis of the magnetic properties of the DMS materials is mandatory and has been accomplished by magnetic measurements carried out using a vibrating sample magnetometer. The morphology of the DMS materials has been studied using scanning electron micrographs.

Monte Carlo Study of Dilute Magnetic Semiconductors

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (81 download)

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Book Synopsis Monte Carlo Study of Dilute Magnetic Semiconductors by : Ruairi Hanafin

Download or read book Monte Carlo Study of Dilute Magnetic Semiconductors written by Ruairi Hanafin and published by . This book was released on 2009 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of the Dilute Magnetic Semiconductor, Ga[subscript 1-x] Mn[subscript X]P and Undoped GaP, with Hard X-ray Photoemission and Angle-resolved Photoemission

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Publisher :
ISBN 13 : 9780438930964
Total Pages : pages
Book Rating : 4.9/5 (39 download)

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Book Synopsis Study of the Dilute Magnetic Semiconductor, Ga[subscript 1-x] Mn[subscript X]P and Undoped GaP, with Hard X-ray Photoemission and Angle-resolved Photoemission by : Armela Keqi

Download or read book Study of the Dilute Magnetic Semiconductor, Ga[subscript 1-x] Mn[subscript X]P and Undoped GaP, with Hard X-ray Photoemission and Angle-resolved Photoemission written by Armela Keqi and published by . This book was released on 2018 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The invention of the transistor revolutionized the world by allowing advances that could hardly be imagined only a few decades earlier. Their pervasiveness in almost every imaginable device today, ranging from wristwatches to large scale industrial automation components, shows just how significant a building block of the modern world transistors are. It also underlines the significance of any potential further advances in semiconductor technology. An emerging development in this regard is the addition of magnetic properties to semiconductors, which, among other things, has the potential of enabling a significant increase in computer storage capacity as well as a corresponding cost decrease. The ability to combine the nonvolatile nature of magnetic materials with the fast speeds typical of semiconductor devices could provide a path to a dramatic improvement of storage technology. A new class of materials suggested to have both semiconductor and magnetic properties is known as dilute magnetic semiconductors (DMS). The main focus of this thesis is the study of the dilute magnetic semiconductor of the group III-V, Ga(Mn)P, which consists of GaP that is doped with metal Manganese. Ga(Mn)P is closely related to Ga(Mn)As which has received a lot of attention in the materials science community. There are, however, important differences between Ga(Mn)P and Ga(Mn)As which we will discuss in this thesis. The electronic structure of three different Ga[subscript 1-x]MnxP DMSs is investigated, with x representing the percent dopant of Mn, which is substitutional to Ga. The three dopant samples are Ga0.98Mn0.02P, Ga0.968Mn0.032P, and Ga0.959Mn0.041P and they are compared to the undoped GaP sample.The experiments reported in this thesis were performed at a number of synchrotron facilities, namely the Advanced Light Source (ALS) at Berkeley (USA), SOLEIL in Paris (France), and SPring-8 at Hyogo (Japan). All these facilities are third-generation synchrotrons. Hard X-ray photoelectron spectroscopy (HXPS) and hard X-ray angle-resolved photoemission spectroscopy (HARPES) at energies of about 3 keV, were the methods used to study the electronic structure of the samples. The advantage of hard x-ray photoelectron spectroscopy is the ability to probe deeper into the sample, therefore measuring bulk properties of the materials. In order to understand the role of the Mn dopant in the emergence of ferromagnetism in our samples, we present both experimental data and theoretical calculations. Both core-level spectra and angle-resolved or angle-integrated valence spectra of Ga0.98Mn0.02P and the undoped GaP are discussed. In particular, the HARPES experimental data are compared to free-electron final-state model calculations and to more accurate one-step photoemission theory. The experimental results show differences between Ga0.98Mn0.02P and GaP in both angle-resolved and angle-integrated valence spectra. The Ga0.98Mn0.02P bands are broadened due to the presence of Mn impurities that disturb the long-range translational order of the host GaP crystal. Mn-induced changes of the electronic structure are observed over the entire valence band range, including the presence of a distinct impurity band close to the valence-band maximum of the DMS. These experimental results are in good agreement with the one-step photoemission calculations, and a prior HARPES study of Ga0.97Mn0.03As and GaAs (Gray et al. Nature Materials 11, 957 (2012)), demonstrating the strong similarity between these two materials. The Mn 2p and 3s core-level spectra also reveal an essentially identical state in doping both GaAs and GaP. Furthermore, additional HXPS experimental results for all three dopant concentrations at two different photon energies, 2550 eV and 2905 eV, show a detailed study of various core-levels. Ga 2p, Ga 3d, P 2p, Mn 2p, and Mn 3s are the main core-levels analyzed and all their features such as spin-orbit splitting, multiplet splitting, and satellite are explained. Experimental data is compared to theoretical calculations using the simulation of electron spectra of surface analysis (SESSA) program.