Strained Sige Channel P Mosfets

Download Strained Sige Channel P Mosfets full books in PDF, epub, and Kindle. Read online Strained Sige Channel P Mosfets ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!

Strain-Engineered MOSFETs

Author : C.K. Maiti
Publisher : CRC Press
ISBN 13 : 1466503475
Total Pages : 311 pages
Book Rating : 4.4/5 (665 download)

DOWNLOAD NOW!

Book Synopsis Strain-Engineered MOSFETs by : C.K. Maiti

Download or read book Strain-Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2018-10-03 with total page 311 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.

Silicon-Germanium Strained Layers and Heterostructures

Author : M. Willander
Publisher : Elsevier
ISBN 13 : 008054102X
Total Pages : 325 pages
Book Rating : 4.0/5 (85 download)

DOWNLOAD NOW!

Book Synopsis Silicon-Germanium Strained Layers and Heterostructures by : M. Willander

Download or read book Silicon-Germanium Strained Layers and Heterostructures written by M. Willander and published by Elsevier. This book was released on 2003-10-02 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: The study of Silicone Germanium strained layers has broad implications for material scientists and engineers, in particular those working on the design and modelling of semi-conductor devices. Since the publication of the original volume in 1994, there has been a steady flow of new ideas, new understanding, new Silicon-Germanium (SiGe) structures and new devices with enhanced performance. Written for both students and senior researchers, the 2nd edition of Silicon-Germanium Strained Layers and Heterostructures provides an essential up-date of this important topic, describing in particular the recent developments in technology and modelling.* Fully-revised and updated 2nd edition incorporating important recent breakthroughs and a complete literature review* The extensive bibliography of over 400 papers provides a comprehensive and coherent overview of the subject* Appropriate for students and senior researchers

Strained-Si Heterostructure Field Effect Devices

Author : C.K Maiti
Publisher : CRC Press
ISBN 13 : 1420012347
Total Pages : 438 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis Strained-Si Heterostructure Field Effect Devices by : C.K Maiti

Download or read book Strained-Si Heterostructure Field Effect Devices written by C.K Maiti and published by CRC Press. This book was released on 2007-01-11 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: A combination of the materials science, manufacturing processes, and pioneering research and developments of SiGe and strained-Si have offered an unprecedented high level of performance enhancement at low manufacturing costs. Encompassing all of these areas, Strained-Si Heterostructure Field Effect Devices addresses the research needs associated wi

Strained Silicon Heterostructures

Author : C. K. Maiti
Publisher : IET
ISBN 13 : 9780852967782
Total Pages : 520 pages
Book Rating : 4.9/5 (677 download)

DOWNLOAD NOW!

Book Synopsis Strained Silicon Heterostructures by : C. K. Maiti

Download or read book Strained Silicon Heterostructures written by C. K. Maiti and published by IET. This book was released on 2001 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book comprehensively covers the areas of materials growth, characterisation and descriptions for the new devices in siliconheterostructure material systems. In recent years, the development of powerful epitaxial growth techniques such as molecular beam epitaxy (MBE), ultra-high vacuum chemical vapour deposition (UHVCVD) and other low temperature epitaxy techniques has given rise to a new area of research of bandgap engineering in silicon-based materials. This has paved the way not only for heterojunction bipolar and field effect transistors, but also for other fascinating novel quantum devices. This book provides an excellent introduction and valuable references for postgraduate students and research scientists.

Physics of Semiconductor Devices

Author : K. N. Bhat
Publisher : Alpha Science Int'l Ltd.
ISBN 13 : 9788173195679
Total Pages : 1310 pages
Book Rating : 4.1/5 (956 download)

DOWNLOAD NOW!

Book Synopsis Physics of Semiconductor Devices by : K. N. Bhat

Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.

Proceedings of the International Conference on Microelectronics, Computing & Communication Systems

Author : Vijay Nath
Publisher : Springer
ISBN 13 : 9811055653
Total Pages : 384 pages
Book Rating : 4.8/5 (11 download)

DOWNLOAD NOW!

Book Synopsis Proceedings of the International Conference on Microelectronics, Computing & Communication Systems by : Vijay Nath

Download or read book Proceedings of the International Conference on Microelectronics, Computing & Communication Systems written by Vijay Nath and published by Springer. This book was released on 2017-12-29 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume comprises select papers from the International Conference on Microelectronics, Computing & Communication Systems(MCCS 2015). Electrical, Electronics, Computer, Communication and Information Technology and their applications in business, academic, industry and other allied areas. The main aim of this volume is to bring together content from international scientists, researchers, engineers from both academia and the industry. The contents of this volume will prove useful to researchers, professionals, and students alike.

SiGe and Ge

Author : David Louis Harame
Publisher : The Electrochemical Society
ISBN 13 : 1566775078
Total Pages : 1280 pages
Book Rating : 4.5/5 (667 download)

DOWNLOAD NOW!

Book Synopsis SiGe and Ge by : David Louis Harame

Download or read book SiGe and Ge written by David Louis Harame and published by The Electrochemical Society. This book was released on 2006 with total page 1280 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second International SiGe & Ge: Materials, Processing, and Devices Symposium was part of the 2006 ECS conference held in Cancun, Mexico from October 29-Nov 3, 2006. This meeting provided a forum for reviewing and discussing all materials and device related aspects of SiGe & Ge. The hardcover edition includes a bonus CD-ROM containing the PDF of the entire issue.

Silicon-Germanium (SiGe) Nanostructures

Author : Y. Shiraki
Publisher : Elsevier
ISBN 13 : 0857091425
Total Pages : 649 pages
Book Rating : 4.8/5 (57 download)

DOWNLOAD NOW!

Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki

Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices.The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices.With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. - Reviews the materials science of nanostructures and their properties and applications in different electronic devices - Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys - Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition

High Mobility Materials for CMOS Applications

Author : Nadine Collaert
Publisher : Woodhead Publishing
ISBN 13 : 0081020627
Total Pages : 390 pages
Book Rating : 4.0/5 (81 download)

DOWNLOAD NOW!

Book Synopsis High Mobility Materials for CMOS Applications by : Nadine Collaert

Download or read book High Mobility Materials for CMOS Applications written by Nadine Collaert and published by Woodhead Publishing. This book was released on 2018-06-29 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt: High Mobility Materials for CMOS Applications provides a comprehensive overview of recent developments in the field of (Si)Ge and III-V materials and their integration on Si. The book covers material growth and integration on Si, going all the way from device to circuit design. While the book's focus is on digital applications, a number of chapters also address the use of III-V for RF and analog applications, and in optoelectronics. With CMOS technology moving to the 10nm node and beyond, however, severe concerns with power dissipation and performance are arising, hence the need for this timely work on the advantages and challenges of the technology. - Addresses each of the challenges of utilizing high mobility materials for CMOS applications, presenting possible solutions and the latest innovations - Covers the latest advances in research on heterogeneous integration, gate stack, device design and scalability - Provides a broad overview of the topic, from materials integration to circuits

Computational Electronics

Author : Dragica Vasileska
Publisher : CRC Press
ISBN 13 : 1351834886
Total Pages : 866 pages
Book Rating : 4.3/5 (518 download)

DOWNLOAD NOW!

Book Synopsis Computational Electronics by : Dragica Vasileska

Download or read book Computational Electronics written by Dragica Vasileska and published by CRC Press. This book was released on 2017-12-19 with total page 866 pages. Available in PDF, EPUB and Kindle. Book excerpt: Starting with the simplest semiclassical approaches and ending with the description of complex fully quantum-mechanical methods for quantum transport analysis of state-of-the-art devices, Computational Electronics: Semiclassical and Quantum Device Modeling and Simulation provides a comprehensive overview of the essential techniques and methods for effectively analyzing transport in semiconductor devices. With the transistor reaching its limits and new device designs and paradigms of operation being explored, this timely resource delivers the simulation methods needed to properly model state-of-the-art nanoscale devices. The first part examines semiclassical transport methods, including drift-diffusion, hydrodynamic, and Monte Carlo methods for solving the Boltzmann transport equation. Details regarding numerical implementation and sample codes are provided as templates for sophisticated simulation software. The second part introduces the density gradient method, quantum hydrodynamics, and the concept of effective potentials used to account for quantum-mechanical space quantization effects in particle-based simulators. Highlighting the need for quantum transport approaches, it describes various quantum effects that appear in current and future devices being mass-produced or fabricated as a proof of concept. In this context, it introduces the concept of effective potential used to approximately include quantum-mechanical space-quantization effects within the semiclassical particle-based device simulation scheme. Addressing the practical aspects of computational electronics, this authoritative resource concludes by addressing some of the open questions related to quantum transport not covered in most books. Complete with self-study problems and numerous examples throughout, this book supplies readers with the practical understanding required to create their own simulators.

Nanoelectronics

Author : Robert Puers
Publisher : John Wiley & Sons
ISBN 13 : 352734053X
Total Pages : 694 pages
Book Rating : 4.5/5 (273 download)

DOWNLOAD NOW!

Book Synopsis Nanoelectronics by : Robert Puers

Download or read book Nanoelectronics written by Robert Puers and published by John Wiley & Sons. This book was released on 2017-06-19 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.

ULSI Process Integration 5

Author : Cor L. Claeys
Publisher : The Electrochemical Society
ISBN 13 : 1566775728
Total Pages : 509 pages
Book Rating : 4.5/5 (667 download)

DOWNLOAD NOW!

Book Synopsis ULSI Process Integration 5 by : Cor L. Claeys

Download or read book ULSI Process Integration 5 written by Cor L. Claeys and published by The Electrochemical Society. This book was released on 2007 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: The symposium provided a forum for reviewing and discussing all aspects of process integration, with special focus on nanoscaled technologies, 65 nm and beyond on DRAM, SRAM, flash memory, high density logic-low power, RF, mixed analog-digital, process integration yield, CMP chemistries, low-k processes, gate stacks, metal gates, rapid thermal processing, silicides, copper interconnects, carbon nanotubes, novel materials, high mobility substrates (SOI, sSi, SiGe, GeOI), strain engineering, and hybrid integration.

Mechanical Stress on the Nanoscale

Author : Margrit Hanbücken
Publisher : John Wiley & Sons
ISBN 13 : 3527639551
Total Pages : 354 pages
Book Rating : 4.5/5 (276 download)

DOWNLOAD NOW!

Book Synopsis Mechanical Stress on the Nanoscale by : Margrit Hanbücken

Download or read book Mechanical Stress on the Nanoscale written by Margrit Hanbücken and published by John Wiley & Sons. This book was released on 2011-12-07 with total page 354 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together experts from the various disciplines involved, this first comprehensive overview of the current level of stress engineering on the nanoscale is unique in combining the theoretical fundamentals with simulation methods, model systems and characterization techniques. Essential reading for researchers in microelectronics, optoelectronics, sensing, and photonics.

Introducing Technology Computer-Aided Design (TCAD)

Author : Chinmay K. Maiti
Publisher : CRC Press
ISBN 13 : 9814745529
Total Pages : 438 pages
Book Rating : 4.8/5 (147 download)

DOWNLOAD NOW!

Book Synopsis Introducing Technology Computer-Aided Design (TCAD) by : Chinmay K. Maiti

Download or read book Introducing Technology Computer-Aided Design (TCAD) written by Chinmay K. Maiti and published by CRC Press. This book was released on 2017-03-16 with total page 438 pages. Available in PDF, EPUB and Kindle. Book excerpt: This might be the first book that deals mostly with the 3D technology computer-aided design (TCAD) simulations of major state-of-the-art stress- and strain-engineered advanced semiconductor devices: MOSFETs, BJTs, HBTs, nonclassical MOS devices, finFETs, silicon-germanium hetero-FETs, solar cells, power devices, and memory devices. The book focuses on how to set up 3D TCAD simulation tools, from mask layout to process and device simulation, including design for manufacturing (DFM), and from device modeling to SPICE parameter extraction. The book also offers an innovative and new approach to teaching the fundamentals of semiconductor process and device design using advanced TCAD simulations of various semiconductor structures. The simulation examples chosen are from the most popular devices in use today and provide useful technology and device physics insights. To extend the role of TCAD in today’s advanced technology era, process compact modeling and DFM issues have been included for design–technology interface generation. Unique in approach, this book provides an integrated view of silicon technology and beyond—with emphasis on TCAD simulations. It is the first book to provide a web-based online laboratory for semiconductor device characterization and SPICE parameter extraction. It describes not only the manufacturing practice associated with the technologies used but also the underlying scientific basis for those technologies. Written from an engineering standpoint, this book provides the process design and simulation background needed to understand new and future technology development, process modeling, and design of nanoscale transistors. The book also advances the understanding and knowledge of modern IC design via TCAD, improves the quality in micro- and nanoelectronics R&D, and supports the training of semiconductor specialists. It is intended as a textbook or reference for graduate students in the field of semiconductor fabrication and as a reference for engineers involved in VLSI technology development who have to solve device and process problems. CAD specialists will also find this book useful since it discusses the organization of the simulation system, in addition to presenting many case studies where the user applies TCAD tools in different situations.

Icccd-2000.

Author :
Publisher : Allied Publishers
ISBN 13 : 9788177641004
Total Pages : 444 pages
Book Rating : 4.6/5 (41 download)

DOWNLOAD NOW!

Book Synopsis Icccd-2000. by :

Download or read book Icccd-2000. written by and published by Allied Publishers. This book was released on 2000 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Low-Frequency Noise in Advanced MOS Devices

Author : Martin Haartman
Publisher : Springer Science & Business Media
ISBN 13 : 1402059108
Total Pages : 224 pages
Book Rating : 4.4/5 (2 download)

DOWNLOAD NOW!

Book Synopsis Low-Frequency Noise in Advanced MOS Devices by : Martin Haartman

Download or read book Low-Frequency Noise in Advanced MOS Devices written by Martin Haartman and published by Springer Science & Business Media. This book was released on 2007-08-23 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is an introduction to noise, describing fundamental noise sources and basic circuit analysis, discussing characterization of low-frequency noise and offering practical advice that bridges concepts of noise theory and modelling, characterization, CMOS technology and circuits. The text offers the latest research, reviewing the most recent publications and conference presentations. The book concludes with an introduction to noise in analog/RF circuits and describes how low-frequency noise can affect these circuits.

Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment

Author : P. J. Timans
Publisher : The Electrochemical Society
ISBN 13 : 1566776260
Total Pages : 488 pages
Book Rating : 4.5/5 (667 download)

DOWNLOAD NOW!

Book Synopsis Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment by : P. J. Timans

Download or read book Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS 4: New Materials, Processes, and Equipment written by P. J. Timans and published by The Electrochemical Society. This book was released on 2008-05 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue describes processing, materials and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.