Spontaneous Atomic Ordering In Movpe Grown Gaassb

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Spontaneous Atomic Ordering in MOVPE Grown GaAsSb

Author : Weiyang Jiang
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (112 download)

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Book Synopsis Spontaneous Atomic Ordering in MOVPE Grown GaAsSb by : Weiyang Jiang

Download or read book Spontaneous Atomic Ordering in MOVPE Grown GaAsSb written by Weiyang Jiang and published by . This book was released on 2008 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Spontaneous atomic ordering of semiconductor alloys is of great practical and fundamental interest. Atomic ordering of III-V alloys such as InGaP has been extensively studied experimentally and theoretically. In this thesis, we investigate a little-studied, atomic-ordering phenomenon, the so-called CuAu structure in the III-V material GaAsSb, grown by the technique of metalorganic vapor-phase epitaxy(MOVPE). Despite being first observed in 1986 in this material, there is as yet no detailed microscopic model for its formation mechanism. A key part of the thesis involves the study of surfactant effects on the ordering process in GaAsSb. Surfactants are elements which modify the growth surface without incorporation in the bulk. Nevertheless, they influence the incorporation of the bulk elements. We first explored the surfactant behavior of Bi on GaAs in order to understand how Bi incorporates at the surface and in the bulk in a related III-V material. For GaAs(001), Bi surface layers are stable at temperatures below 500C but rapidly desorb at temperatures of 550C and higher. Bi coverages of over 1ML induce the formation of Bi islands, whose sizes increase with increasing Bi exposure. Bulk incorporation of Bi remains essentially zero at typical MOVPE growth temperatures. In the case of GaAsSb alloys, Bi surfactant was found to induce CuAu ordering, with no measurable Bi incorporation in the bulk. High resolution TEM was used to study the detailed microstructural features for ordered and disordered samples. The domain sizes of the ordered regions are from 5nm to 20nm under all growth conditions. In contrast to orderings in other alloys such as InGaP, CuAu ordering had no observable effect on the bandgap. CuAu ordering in GaAsSb was studied in a function of growth conditions, including Bi surfactant concentration, growth temperature, growth rate, and substrate miscut. All of these experiments confirm that bulk CuAu ordering is a surface driven, rather than bulk process. It is unlikely that the ordering mechanism is similar to the dimer-induced strain models that have been successfully used to explain CuPt ordering in InGaP. We propose a simple model based on alternating incorporation of group V adatoms at step edges.

Spontaneous Ordering in Semiconductor Alloys

Author : Angelo Mascarenhas
Publisher : Springer Science & Business Media
ISBN 13 : 146150631X
Total Pages : 483 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Spontaneous Ordering in Semiconductor Alloys by : Angelo Mascarenhas

Download or read book Spontaneous Ordering in Semiconductor Alloys written by Angelo Mascarenhas and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 483 pages. Available in PDF, EPUB and Kindle. Book excerpt: The phenomenonofspontaneous ordering in semiconductoralloys, which can be categorized as a self-organized process, is observed to occur sponta neously during epitaxial growth of certain ternary alloy semiconductors and results in a modification of their structural, electronic, and optical properties. There has been a great dealofinterest in learning how to control this phenome non so that it may be used for tailoring desirable electronic and optical properties. There has been even greater interest in exploiting the phenomenon for its unique ability in providing an experimental environment of controlled alloy statistical fluctuations. As such, itimpacts areasofsemiconductorscience and technology related to the materials science ofepitaxial growth, statistical mechanics, and electronic structure of alloys and electronic and photonic devices. During the past two decades, significant progress has been made toward understanding the mechanisms that drive this phenomenon and the changes in physical properties that result from it. A variety of experimental techniques have been used to probe the phenomenon and several attempts made atproviding theoretical models both for the ordering mechanisms as well as electronic structure changes. The various chapters of this book provide a detailed account of these efforts during the past decade. The first chapter provides an elaborate account of the phenomenon, with an excellent perspective of the structural and elec tronic modifications itinduces.

Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Metalorganic Vapor Phase Epitaxy (MOVPE)

Author : Stuart Irvine
Publisher : John Wiley & Sons
ISBN 13 : 1119313031
Total Pages : 907 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-09-04 with total page 907 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Heteroepitaxy of Semiconductors

Author : John E. Ayers
Publisher : CRC Press
ISBN 13 : 1315355175
Total Pages : 794 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Low-Dimensional Structures in Semiconductors

Author : A.R. Peaker
Publisher : Springer Science & Business Media
ISBN 13 : 1489906231
Total Pages : 227 pages
Book Rating : 4.4/5 (899 download)

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Book Synopsis Low-Dimensional Structures in Semiconductors by : A.R. Peaker

Download or read book Low-Dimensional Structures in Semiconductors written by A.R. Peaker and published by Springer Science & Business Media. This book was released on 2013-06-29 with total page 227 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains a sequence of reviews presented at the NATO Advanced Study Institute on 'Low Dimensional Structures in Semiconductors ... from Basic Physics to Applications.' This was part of the International School of Materials Science and 1990 at the Ettore Majorana Centre in Sicily. Technology held in July Only a few years ago, Low Dimensional Structures was an esoteric concept, but now it is apparent they are likely to playa major role in the next generation of electronic devices. The theme of the School acknowledged this rapidly developing maturity.' The contributions to the volume consider not only the essential physics, but take a wider view of the topic, starting from material growth and processing, then prog ressing right through to applications with some discussion of the likely use of low dimensional devices in systems. The papers are arranged into four sections, the first of which deals with basic con cepts of semiconductor and low dimensional systems. The second section is on growth and fabrication, reviewing MBE and MOVPE methods and discussing the achievements and limitations of techniques to reduce structures into the realms of one and zero dimensions. The third section covers the crucial issue of interfaces while the final section deals with devices and device physics.

High Brightness Light Emitting Diodes

Author :
Publisher : Academic Press
ISBN 13 : 0080864457
Total Pages : 489 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis High Brightness Light Emitting Diodes by :

Download or read book High Brightness Light Emitting Diodes written by and published by Academic Press. This book was released on 1998-02-09 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume 48in the Semiconductors and Semimetals series discusses the physics and chemistry of electronic materials, a subject of growing practical importance in the semiconductor devices industry. The contributors discuss the current state of knowledge and provide insight into future developments of this important field.

Springer Handbook of Electronic and Photonic Materials

Author : Safa Kasap
Publisher : Springer
ISBN 13 : 331948933X
Total Pages : 1536 pages
Book Rating : 4.3/5 (194 download)

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Book Synopsis Springer Handbook of Electronic and Photonic Materials by : Safa Kasap

Download or read book Springer Handbook of Electronic and Photonic Materials written by Safa Kasap and published by Springer. This book was released on 2017-10-04 with total page 1536 pages. Available in PDF, EPUB and Kindle. Book excerpt: The second, updated edition of this essential reference book provides a wealth of detail on a wide range of electronic and photonic materials, starting from fundamentals and building up to advanced topics and applications. Its extensive coverage, with clear illustrations and applications, carefully selected chapter sequencing and logical flow, makes it very different from other electronic materials handbooks. It has been written by professionals in the field and instructors who teach the subject at a university or in corporate laboratories. The Springer Handbook of Electronic and Photonic Materials, second edition, includes practical applications used as examples, details of experimental techniques, useful tables that summarize equations, and, most importantly, properties of various materials, as well as an extensive glossary. Along with significant updates to the content and the references, the second edition includes a number of new chapters such as those covering novel materials and selected applications. This handbook is a valuable resource for graduate students, researchers and practicing professionals working in the area of electronic, optoelectronic and photonic materials.

Optical Characterization of Epitaxial Semiconductor Layers

Author : Günther Bauer
Publisher : Springer Science & Business Media
ISBN 13 : 3642796788
Total Pages : 446 pages
Book Rating : 4.6/5 (427 download)

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Book Synopsis Optical Characterization of Epitaxial Semiconductor Layers by : Günther Bauer

Download or read book Optical Characterization of Epitaxial Semiconductor Layers written by Günther Bauer and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 446 pages. Available in PDF, EPUB and Kindle. Book excerpt: The characterization of epitaxial layers and their surfaces has benefitted a lot from the enormous progress of optical analysis techniques during the last decade. In particular, the dramatic improvement of the structural quality of semiconductor epilayers and heterostructures results to a great deal from the level of sophistication achieved with such analysis techniques. First of all, optical techniques are nondestructive and their sensitivity has been improved to such an extent that nowadays the epilayer analysis can be performed on layers with thicknesses on the atomic scale. Furthermore, the spatial and temporal resolution have been pushed to such limits that real time observation of surface processes during epitaxial growth is possible with techniques like reflectance difference spectroscopy. Of course, optical spectroscopies complement techniques based on the inter action of electrons with matter, but whereas the latter usually require high or ultrahigh vacuum conditions, the former ones can be applied in different environments as well. This advantage could turn out extremely important for a rather technological point of view, i.e. for the surveillance of modern semiconductor processes. Despite the large potential of techniques based on the interaction of electromagnetic waves with surfaces and epilayers, optical techniques are apparently moving only slowly into this area of technology. One reason for this might be that some prejudices still exist regarding their sensitivity.

Bismuth-Containing Alloys and Nanostructures

Author : Shumin Wang
Publisher : Springer
ISBN 13 : 9811380783
Total Pages : 399 pages
Book Rating : 4.8/5 (113 download)

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Book Synopsis Bismuth-Containing Alloys and Nanostructures by : Shumin Wang

Download or read book Bismuth-Containing Alloys and Nanostructures written by Shumin Wang and published by Springer. This book was released on 2019-07-03 with total page 399 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on novel bismuth-containing alloys and nanostructures, covering a wide range of materials from semiconductors, topological insulators, silica optical fibers and to multiferroic materials. It provides a timely overview of bismuth alloys and nanostructures, from material synthesis and physical properties to device applications and also includes the latest research findings. Bismuth is considered to be a sustainable and environmentally friendly element, and has received increasing attention in a variety of innovative research areas in recent years. The book is intended as a reference resource and textbook for graduate students and researchers working in these fields.

Dilute Nitride Semiconductors

Author : Mohamed Henini
Publisher : Elsevier
ISBN 13 : 0080455999
Total Pages : 648 pages
Book Rating : 4.0/5 (84 download)

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Book Synopsis Dilute Nitride Semiconductors by : Mohamed Henini

Download or read book Dilute Nitride Semiconductors written by Mohamed Henini and published by Elsevier. This book was released on 2004-12-15 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field. It gives the reader easier access and better evaluation of future trends, Conveying important results and current ideas. Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community. The high speed lasers operating at wavelength of 1.3 μm and 1.55 μm are very important light sources in optical communications since the optical fiber used as a transport media of light has dispersion and attenuation minima, respectively, at these wavelengths. These long wavelengths are exclusively made of InP-based material InGaAsP/InP. However, there are several problems with this material system. Therefore, there has been considerable effort for many years to fabricate long wavelength laser structures on other substrates, especially GaAs. The manufacturing costs of GaAs-based components are lower and the processing techniques are well developed. In 1996 a novel quaternary material GaInAsN was proposed which could avoid several problems with the existing technology of long wavelength lasers. In this book, several leaders in the field of dilute nitrides will cover the growth and processing, experimental characterization, theoretical understanding, and device design and fabrication of this recently developed class of semiconductor alloys. They will review their current status of research and development. Dilute Nitrides (III-N-V) Semiconductors: Physics and Technology organises the most current available data, providing a ready source of information on a wide range of topics, making this book essential reading for all post graduate students, researchers and practitioners in the fields of Semiconductors and Optoelectronics Contains full account of the advances made in the dilute nitrides, providing an excellent starting point for workers entering the field Gives the reader easier access and better evaluation of future trends, conveying important results and current ideas Includes a generous list of references at the end of each chapter, providing a useful reference to the III-V-N based semiconductors research community

Organometallic Vapor-Phase Epitaxy

Author : Gerald B. Stringfellow
Publisher : Elsevier
ISBN 13 : 0323139175
Total Pages : 417 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Organometallic Vapor-Phase Epitaxy by : Gerald B. Stringfellow

Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.

Semiconductor Nanowires II: Properties and Applications

Author :
Publisher : Academic Press
ISBN 13 : 0128041447
Total Pages : 424 pages
Book Rating : 4.1/5 (28 download)

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Book Synopsis Semiconductor Nanowires II: Properties and Applications by :

Download or read book Semiconductor Nanowires II: Properties and Applications written by and published by Academic Press. This book was released on 2016-01-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor Nanowires: Part B, and Volume 94 in the Semiconductor and Semimetals series, focuses on semiconductor nanowires. Includes experts contributors who review the most important recent literature Contains a broad view, including examination of semiconductor nanowires

Frontiers of High Pressure Research

Author : Hans D. Hochheimer
Publisher : Springer Science & Business Media
ISBN 13 : 9780306441882
Total Pages : 514 pages
Book Rating : 4.4/5 (418 download)

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Book Synopsis Frontiers of High Pressure Research by : Hans D. Hochheimer

Download or read book Frontiers of High Pressure Research written by Hans D. Hochheimer and published by Springer Science & Business Media. This book was released on 1991 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Proceedings of a NATO ARW held in Fort Collins, Colorado, July 15-18, 1991

Clean Electricity From Photovoltaics

Author : Mary D Archer
Publisher : World Scientific
ISBN 13 : 1783262052
Total Pages : 870 pages
Book Rating : 4.7/5 (832 download)

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Book Synopsis Clean Electricity From Photovoltaics by : Mary D Archer

Download or read book Clean Electricity From Photovoltaics written by Mary D Archer and published by World Scientific. This book was released on 2001-06-04 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Photovoltaic cells provide clean, reversible electrical power from the sun. Made from semiconductors, they are durable, silent in operation and free of polluting emissions. In this book, experts from all sectors of the PV community — materials scientists, physicists, production engineers, economists and environmentalists — give their critical appraisals of where the technology is now and what its prospects are./a

Atom Probe Microscopy

Author : Baptiste Gault
Publisher : Springer Science & Business Media
ISBN 13 : 146143436X
Total Pages : 411 pages
Book Rating : 4.4/5 (614 download)

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Book Synopsis Atom Probe Microscopy by : Baptiste Gault

Download or read book Atom Probe Microscopy written by Baptiste Gault and published by Springer Science & Business Media. This book was released on 2012-08-27 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Atom probe microscopy enables the characterization of materials structure and chemistry in three dimensions with near-atomic resolution. This uniquely powerful technique has been subject to major instrumental advances over the last decade with the development of wide-field-of-view detectors and pulsed-laser-assisted evaporation that have significantly enhanced the instrument’s capabilities. The field is flourishing, and atom probe microscopy is being embraced as a mainstream characterization technique. This book covers all facets of atom probe microscopy—including field ion microscopy, field desorption microscopy and a strong emphasis on atom probe tomography. Atom Probe Microscopy is aimed at researchers of all experience levels. It will provide the beginner with the theoretical background and practical information necessary to investigate how materials work using atom probe microscopy techniques. This includes detailed explanations of the fundamentals and the instrumentation, contemporary specimen preparation techniques, experimental details, and an overview of the results that can be obtained. The book emphasizes processes for assessing data quality, and the proper implementation of advanced data mining algorithms. Those more experienced in the technique will benefit from the book as a single comprehensive source of indispensable reference information, tables and techniques. Both beginner and expert will value the way that Atom Probe Microscopy is set out in the context of materials science and engineering, and includes references to key recent research outcomes.

Perovskite and Piezoelectric Materials

Author : Someshwar Pola
Publisher : BoD – Books on Demand
ISBN 13 : 1789856655
Total Pages : 230 pages
Book Rating : 4.7/5 (898 download)

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Book Synopsis Perovskite and Piezoelectric Materials by : Someshwar Pola

Download or read book Perovskite and Piezoelectric Materials written by Someshwar Pola and published by BoD – Books on Demand. This book was released on 2021-01-27 with total page 230 pages. Available in PDF, EPUB and Kindle. Book excerpt: Investigating in the area of perovskite materials and the fabrication of devices for properties in optoelectronics, we have presented a brief outline of perovskite materials. The authors present a fairly comprehensive arrangement of this very active area of research, with its past changes and present position and outlooks. Discussions are presented regarding photocatalysis, fabrication of solar cell devices and their stability, lead-free materials, as well as thermoelectric and piezoelectric applications. In view of the present status of perovskite materials, I am assured that each chapter of the book will be of boundless encouragement for researchers, scientists, and academicians working in this field.