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Some Investigations On Germanium And Silicon Surfaces
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Book Synopsis Some Investigations on Germanium and Silicon Surfaces by : A. H. Boonstra
Download or read book Some Investigations on Germanium and Silicon Surfaces written by A. H. Boonstra and published by . This book was released on 1968 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Field Effect Investigations of Surface States on Clean Surfaces of Silicon and Germanium by : D. M. Thompson
Download or read book Field Effect Investigations of Surface States on Clean Surfaces of Silicon and Germanium written by D. M. Thompson and published by . This book was released on 1973 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quantum-mechanical Investigation of Germanium Nanostructures on Silicon Surfaces by : Aditi Shankar Rao
Download or read book Quantum-mechanical Investigation of Germanium Nanostructures on Silicon Surfaces written by Aditi Shankar Rao and published by . This book was released on 2008 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Lithium-Drifted Germanium Detectors: Their Fabrication and Use by : I. C. Brownridge
Download or read book Lithium-Drifted Germanium Detectors: Their Fabrication and Use written by I. C. Brownridge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 222 pages. Available in PDF, EPUB and Kindle. Book excerpt: A lithium-drifted germanium detector is a semiconductor de vice which operates at liquid nitrogen temperature, and is used for detection of nuclear radiation, mostly gamma ray. The detection occurs when the y-ray undergoes an interaction in the intrinsic or I region of the semiconductor. The interaction results in the pro duction of charge carriers which are swept out by an electric field. This is accomplished by reverse biasing the detector with approxi mately 100 v/mm of intrinsic material. The total amount of charge swept out is proportional to the energy dissipated in the intrinsic region. This may include the total energy of the photon, but gen erally somewhat less. The Ge(Li) device is a semiconductor p-n device with a very large intrinsic region between the positive carrier region and the negative carrier region (P-I-N). The fabrication of this device consists of three major steps: the diffusion of the lithium into the p-type germanium to give an n-type surface region, the drifting process to obtain the intrinsic region as deeply as possible, and the surface preparation. There are numerous procedures for the various steps as well as criteria for material selection and the preparation of the materials.
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 1028 pages. Available in PDF, EPUB and Kindle. Book excerpt: Lists citations with abstracts for aerospace related reports obtained from world wide sources and announces documents that have recently been entered into the NASA Scientific and Technical Information Database.
Book Synopsis Some Investigations on Gemanium and Silicon Surfaces by :
Download or read book Some Investigations on Gemanium and Silicon Surfaces written by and published by . This book was released on 1968 with total page 106 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Some Investigations on germanicum and silicon surfaces by :
Download or read book Some Investigations on germanicum and silicon surfaces written by and published by . This book was released on 1968 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Government-wide Index to Federal Research & Development Reports by :
Download or read book Government-wide Index to Federal Research & Development Reports written by and published by . This book was released on 1967-10 with total page 1020 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Theoretical Investigations of the Structure and Reactivity of the Si(100) and Ge(100) Surfaces by : Andrew Foraker
Download or read book Theoretical Investigations of the Structure and Reactivity of the Si(100) and Ge(100) Surfaces written by Andrew Foraker and published by . This book was released on 2001 with total page 308 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis An Experimental Investigation of Some Contact and Surface Properties of Germanium by : Peter Morland Tipple
Download or read book An Experimental Investigation of Some Contact and Surface Properties of Germanium written by Peter Morland Tipple and published by . This book was released on 1954 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon, Germanium, and Their Alloys by : Gudrun Kissinger
Download or read book Silicon, Germanium, and Their Alloys written by Gudrun Kissinger and published by CRC Press. This book was released on 2014-12-09 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Despite the vast knowledge accumulated on silicon, germanium, and their alloys, these materials still demand research, eminently in view of the improvement of knowledge on silicon-germanium alloys and the potentialities of silicon as a substrate for high-efficiency solar cells and for compound semiconductors and the ongoing development of nanodevic
Book Synopsis Silicon-Germanium (SiGe) Nanostructures by : Y. Shiraki
Download or read book Silicon-Germanium (SiGe) Nanostructures written by Y. Shiraki and published by Elsevier. This book was released on 2011-02-26 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanostructured silicon-germanium (SiGe) opens up the prospects of novel and enhanced electronic device performance, especially for semiconductor devices. Silicon-germanium (SiGe) nanostructures reviews the materials science of nanostructures and their properties and applications in different electronic devices. The introductory part one covers the structural properties of SiGe nanostructures, with a further chapter discussing electronic band structures of SiGe alloys. Part two concentrates on the formation of SiGe nanostructures, with chapters on different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition. This part also includes chapters covering strain engineering and modelling. Part three covers the material properties of SiGe nanostructures, including chapters on such topics as strain-induced defects, transport properties and microcavities and quantum cascade laser structures. In Part four, devices utilising SiGe alloys are discussed. Chapters cover ultra large scale integrated applications, MOSFETs and the use of SiGe in different types of transistors and optical devices. With its distinguished editors and team of international contributors, Silicon-germanium (SiGe) nanostructures is a standard reference for researchers focusing on semiconductor devices and materials in industry and academia, particularly those interested in nanostructures. Reviews the materials science of nanostructures and their properties and applications in different electronic devices Assesses the structural properties of SiGe nanostructures, discussing electronic band structures of SiGe alloys Explores the formation of SiGe nanostructuresfeaturing different methods of crystal growth such as molecular beam epitaxy and chemical vapour deposition
Book Synopsis Physical Properties of Atomically Clean Semiconductor Surface by : Boris Alekseevich Nesterenko
Download or read book Physical Properties of Atomically Clean Semiconductor Surface written by Boris Alekseevich Nesterenko and published by . This book was released on 1988 with total page 344 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis INVESTIGATIONS OF SURFACE PROPERTIES OF SILICON AND OTHER SEMICONDUCTORS. by :
Download or read book INVESTIGATIONS OF SURFACE PROPERTIES OF SILICON AND OTHER SEMICONDUCTORS. written by and published by . This book was released on 1963 with total page 41 pages. Available in PDF, EPUB and Kindle. Book excerpt: The photoelectric work functions of atomically clean surfaces of three planes niobium as measured by the Fowler method are; (111), 4.66; (335), 4. 55; (110), 4.33 ev. The work function of ion bombarded surfaces of all three planes is 4.09 ev. The sticking coefficient for oxygen on the clean surfaces is 0.9 and on the ion bombarded surfaces is 0.2. The sticking coefficient for carbon monoxide on these surfaces was found to be at least an order of magnitude lower than the values quoted for oxygen. The work function of ion bombarded surfaces is found to be dependent on the extent of bombardment for bombardments of less than one minute carried out at 0.20 ma/square centimeter . A work function of about 4.7 ev has been observed for a bombardment of 20 seconds on the (355) face. Ion-bombardment etching effects observed on the three planes are similar to those observed on germanium and silicon.
Book Synopsis Investigation of Quantum Confinement in Silicon and Germanium Semiconductor Nanocrystals and Their Application in Photonic Devices by : Gildardo Rios Delgado
Download or read book Investigation of Quantum Confinement in Silicon and Germanium Semiconductor Nanocrystals and Their Application in Photonic Devices written by Gildardo Rios Delgado and published by . This book was released on 1997 with total page 490 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Solar Energy Update written by and published by . This book was released on 1985 with total page 856 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physical Methods of Chemistry, Investigations of Surfaces and Interfaces by : Bryant W. Rossiter
Download or read book Physical Methods of Chemistry, Investigations of Surfaces and Interfaces written by Bryant W. Rossiter and published by John Wiley & Sons. This book was released on 1993-01-12 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each volume of this series heralds profound changes in both the perception and practice of chemistry. This edition presents the state of the art of all important methods of instrumental chemical analysis, measurement and control. Contributions offer introductions together with sufficient detail to give a clear understanding of basic theory and apparatus involved and an appreciation of the value, potential and limitations of the respective techniques. The emphasis of the subjects treated is on method rather than results, thus aiding the investigator in applying the techniques successfully in the laboratory.