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Small Signal And Noise Two Dimensional Modeling Of Submicrometer High Speed Bipolar Transistor
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Book Synopsis Small-signal and Noise Two-dimensional Modeling of Submicrometer High Speed Bipolar Transistor by :
Download or read book Small-signal and Noise Two-dimensional Modeling of Submicrometer High Speed Bipolar Transistor written by and published by . This book was released on 1909 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: In the first part of the paper, the Y matrix representation is used to directly and accurately extract all the parameters of the --hybrid model. In the second part the noise sources are added to the equivalent model and the analytical expression of noise figure is obtained. This expression is used to get a full set of noise parameters to characterize the behaviour of the bipolar microwave transistors from numerical simulation.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation by : Jiann-Shiun Yuan
Download or read book Modeling and Characterization of Advanced Bipolar Transistors and Interconnects for Circuit Simulation written by Jiann-Shiun Yuan and published by . This book was released on 1988 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation discusses the modeling of two-dimensional effects in advanced bipolar transistors (BJT's) and interconnects. The goal is to develop accurate and compact models for SPICE circuit simulation of advanced bipolar technologies. After reviewing base pushout mechanism in the bipolar transistor, the collector current spreading effects in quasi-saturation have been presented. A two-dimensional circuit model including collector spreading effects in the epitaxial collector is developed based on the physical insights gained from PISCES device simulations. Illustrative measurements and simulations demonstrate the bipolar circuit modeling accuracy. Then a physics-based current-dependent base resistance model for circuit simulation is developed. Physical mechanisms such as base width modulation, base conductivity modulation, emitter crowding, and base pushout are accounted for in the comprehensive current -dependent base resistance "model. Comparisons of the model predictions with measurements and device simulations show excellent agreement. Two-dimensional circuit modeling is developed for the nonuniform current and charge distribution effects at the emitter-base sidewall and under the emitter during switch-on transients. The charge and current partitioning implemented in the bipolar transistor model treats the transient emitter crowding and current -dependent base resistance in a unified manner. Good agreement is obtained between model predictions and experimental results and transient device simulations. In parallel to the work on fast BJT digital transients, the bipolar transistor high-frequency small-signal s-parameter prediction using a physical device simulator is developed. This is a novel result which includes the effects of the Intrinsic bipolar response as well as the parasitics of interconnects, discontinuities, and bonding pads. This modeling technique can be used for sophisticated three-port or four-port network characterization and for predicting the high-frequency small-signal parameters other types of transistors. The dissertation examines the improvement of IC interconnect models. Interconnect models including losses and dispersion are developed for advanced BJT IC doping profiles. In addition, signal crosstalk between adjacent interconnects is discussed. An ECL ring oscillator with interconnection line in mixed-mode circuit simulation demonstrates the utility and necessity of accurate interconnect modeling. In summary, the dissertation provides a comprehensive two-dimensional circuit and interconnect modeling for advanced bipolar IC techniques useful in computer-aided device and circuit design.
Book Synopsis Compact Hierarchical Bipolar Transistor Modeling with Hicum by : Michael Schrter
Download or read book Compact Hierarchical Bipolar Transistor Modeling with Hicum written by Michael Schrter and published by World Scientific. This book was released on 2010 with total page 753 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compact Hierarchical Bipolar Transistor Modeling with HICUM will be of great practical benefit to professionals from the process development, modeling and circuit design community who are interested in the application of bipolar transistors, which include the SiGe:C HBTs fabricated with existing cutting-edge process technology. The book begins with an overview on the different device designs of modern bipolar transistors, along with their relevant operating conditions; while the subsequent chapter on transistor theory is subdivided into a review of mostly classical theories, brought into context with modern technology, and a chapter on advanced theory that is required for understanding modern device designs. This book aims to provide a solid basis for the understanding of modern compact models.
Book Synopsis Microelectronics and Microsystems by : Luigi Fortuna
Download or read book Microelectronics and Microsystems written by Luigi Fortuna and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 216 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book presents the best contributions, extracted from the theses written by the students who have attended the second edition of the Master in Microelectronics and Systems that has been organized by the Universita degli Studi di Catania and that has been held at the STMicroelectronics Company (Catania Site) from May 2000 to January 2001. In particular, the mentioned Master has been organized among the various ac tivities of the "Istituto Superiore di Catania per la Formazione di Eccellenza". The Institute is one of the Italian network of universities selected by MURST (Ministry University Research Scientific Technology). The first aim of tl;te Master in Microelectronics and Systems is to increase the skills of the students with the Laurea Degree in Physics or Electrical Engineering in the more advanced areas as VLSI system design, high-speed low-voltage low-power circuitS and RF systems. The second aim has been to involve in the educational program companies like STMicroelectronics, ACCENT and ITEL, interested in emergent microelectronics topics, to cooperate with the University in developing high-level research projects. Besides the tutorial activity during the teaching hours, provided by national and international researchers, a significant part of the School has been dedicated to the presentation of specific CAD tools and experiments in order to prepare the students to solve specific problems during the stage period and in the thesis work.
Book Synopsis Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors by : Andreas Pawlak
Download or read book Advanced Modeling of Silicon-Germanium Heterojunction Bipolar Transistors written by Andreas Pawlak and published by Tudpress Verlag Der Wissenschaften Gmbh. This book was released on 2015-10-14 with total page 244 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon-Germanium Heterojunction Bipolar Transistors (SiGe HBTs) are perfectly suited for high-speed electronics. Since the fabrication costs per design cycle are rapidly increasing with progressing frequency and complexity of the systems, accurate compact models are essential in order to enable robust circuit design. This thesis focuses on selected important physical effects in advanced SiGe HBTs, which have been either insufficiently modeled or completely missing in conventional compact models. New compact model equations for the transfer current were derived and successfully applied to a large set of different technologies. Hereby, the "Generalized Integral Charge Control Relation" was used as a foundation. A physics-based model utilizing small-signal parameters obtained from measurements is derived for modeling the current dependent collector charge. A brief chapter about substrate effects in bipolar transistors comprises the derivation of a compact model for the bias-dependent substrate resistance as well as a proper partitioning of the substrate capacitance. New extraction methods for compact model parameters are introduced and the application of existing methods to advanced processes is discussed. The derived joint extraction method for the emitter and thermal resistance as well as a scalable model for the transfer current have been successfully applied to experimental data of fast HBTs. The derived model equations were applied to a selected very advanced SiGe HBT process developed by IHP. Highly accurate models for DC- and small-signal as well as for large-signal characteristics are presented.
Book Synopsis Index to IEEE Publications by : Institute of Electrical and Electronics Engineers
Download or read book Index to IEEE Publications written by Institute of Electrical and Electronics Engineers and published by . This book was released on 1997 with total page 1462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Issues for 1973- cover the entire IEEE technical literature.
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis RF and Microwave Transmitter Design by : Andrei Grebennikov
Download or read book RF and Microwave Transmitter Design written by Andrei Grebennikov and published by John Wiley & Sons. This book was released on 2011-07-12 with total page 848 pages. Available in PDF, EPUB and Kindle. Book excerpt: RF and Microwave Transmitter Design is unique in its coverage of both historical transmitter design and cutting edge technologies. This text explores the results of well-known and new theoretical analyses, while informing readers of modern radio transmitters' pracitcal designs and their components. Jam-packed with information, this book broadcasts and streamlines the author's considerable experience in RF and microwave design and development.
Book Synopsis Reliability Study of InGaP/GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization, Modeling and Simulation by : Xiang Liu
Download or read book Reliability Study of InGaP/GaAs Heterojunction Bipolar Transistor MMIC Technology by Characterization, Modeling and Simulation written by Xiang Liu and published by . This book was released on 2011 with total page 88 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent years have shown real advances of microwave monolithic integrated circuits (MMICs) for millimeter-wave frequency systems, such as wireless communication, advanced imaging, remote sensing and automotive radar systems, as MMICs can provide the size, weight and performance required for these systems. Traditionally, GaAs pseudomorphic high electron mobility transistor (pHEMT) or InP based MMIC technology has dominated in millimeter-wave frequency applications because of their high f[subscript T] and f[subscript max] as well as their superior noise performance. But these technologies are very expensive. Thus, for low cost and high performance applications, InGaP/GaAs heterojunction bipolar transistors (HBTs) are quickly becoming the preferred technology to be used due to their inherently excellent characteristics. These features, together with the need for only one power supply to bias the device, make InGaP/GaAs HBTs very attractive for the design of high performance fully integrated MMICs. With the smaller dimensions for improving speed and functionality of InGaP/GaAs HBTs, which dissipate large amount of power and result in heat flux accumulated in the device junction, technology reliability issues are the first concern for the commercialization. As the thermally triggered instabilities often seen in InGaP/GaAs HBTs, a carefully derived technique to define the stress conditions of accelerated life test has been employed in our study to acquire post-stress device characteristics for the projection of long-term device performance degradation pattern. To identify the possible origins of the post-stress device behaviors observed experimentally, a two dimensional (2-D) TCAD numerical device simulation has been carried out. Using this approach, it is suggested that the acceptor-type trapping states located in the emitter bulk are responsible for the commonly seen post-stress base current instability over the moderate base-emitter voltage region. HBT-based MMIC performance is very sensitive to the variation of core device characteristics and the reliability issues put the limit on its radio frequency (RF) behaviors. While many researchers have reported the observed stress-induced degradations of GaAs HBT characteristics, there has been little published data on the full understanding of stress impact on the GaAs HBT-based MMICs. If care is not taken to understand this issue, stress-induced degradation paths can lead to built-in circuit failure during regular operations. However, detection of this failure may be difficult due to the circuit complexity and lead to erroneous data or output conditions. Thus, a practical and analytical methodology has been developed to predict the stress impacts on HBT-based MMICs. It provides a quick way and guidance for the RF design engineer to evaluate the circuit performance with reliability considerations. Using the present existing EDA tools (Cadance SpectreRF and Agilent ADS) with the extracted pre- and post-stress transistor models, the electrothermal stress effects on InGaP/GaAs HBT-based RF building blocks including power amplifier (PA), low-noise amplifier (LNA) and oscillator have been systematically evaluated. This provides a potential way for the RF/microwave industry to save tens of millions of dollars annually in testing costs. The world now stands at the threshold of the age of advanced GaAs HBT MMIC technology and researchers have been exploring here for years. The reliability of GaAs HBT technology is no longer the post-design evaluation, but the pre-design consideration. The successful and fruitful results of this dissertation provide methods and guidance for the RF designers to achieve more reliable RF circuits with advanced GaAs HBT technology in the future.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Noise in Devices and Circuits written by and published by . This book was released on 2003 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :IEEE Microwave Theory and Techniques Society Publisher :Institute of Electrical & Electronics Engineers(IEEE) ISBN 13 : Total Pages :388 pages Book Rating :4.X/5 (4 download)
Book Synopsis Proceedings, RAWCON 98 by : IEEE Microwave Theory and Techniques Society
Download or read book Proceedings, RAWCON 98 written by IEEE Microwave Theory and Techniques Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1998 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: These papers from RAWCON '98 offer an interdisciplinary focus at the intersection between radio-frequency and communications engineering. Topics include: broadband wireless systems concepts; system architecture and networking; and system modelling and measurement.
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1416 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis IEICE Transactions on Electronics by :
Download or read book IEICE Transactions on Electronics written by and published by . This book was released on 1999 with total page 1116 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis IEEE Transactions on Microwave Theory and Techniques by :
Download or read book IEEE Transactions on Microwave Theory and Techniques written by and published by . This book was released on 1953 with total page 880 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski
Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
