Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Download Silicon Carbide A High Temperature Semiconductor full books in PDF, epub, and Kindle. Read online Silicon Carbide A High Temperature Semiconductor ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Author : Joseph R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 552 pages
Book Rating : 4.F/5 ( download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by Joseph R. O'Connor and published by . This book was released on 1960 with total page 552 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Conference on Silicon Carbide, Boston, 1959
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (144 download)
Download or read book Silicon carbide, a high temperature semiconductor: proceedings of the conference... written by Conference on Silicon Carbide, Boston, 1959 and published by . This book was released on with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Committee on Materials for High-Temperature Semiconductor Devices
Publisher : National Academies Press
ISBN 13 : 030959653X
Total Pages : 136 pages
Book Rating : 4.3/5 (95 download)
Download or read book Materials for High-Temperature Semiconductor Devices written by Committee on Materials for High-Temperature Semiconductor Devices and published by National Academies Press. This book was released on 1995-09-28 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt: Major benefits to system architecture would result if cooling systems for components could be eliminated without compromising performance. This book surveys the state-of-the-art for the three major wide bandgap materials (silicon carbide, nitrides, and diamond), assesses the national and international efforts to develop these materials, identifies the technical barriers to their development and manufacture, determines the criteria for successfully packaging and integrating these devices into existing systems, and recommends future research priorities.
Author : Gus J. Caras
Publisher :
ISBN 13 :
Total Pages : 212 pages
Book Rating : 4.3/5 (91 download)
Download or read book Silicon Carbide for Semiconductors written by Gus J. Caras and published by . This book was released on 1965 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (847 download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by J. R. O'Connor and published by . This book was released on 1960 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Conference on Silicon Carbide (BOSTON, Massachusetts)
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (558 download)
Download or read book Silicon Carbide: a High Temperature Semiconductor. Proceedings of the Conference on Silicon Carbide ... April 2-3, 1959. Edited by J.R. O'Connor and J. Smiltens, Etc written by Conference on Silicon Carbide (BOSTON, Massachusetts) and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen E. Saddow
Publisher : Artech House
ISBN 13 : 9781580537414
Total Pages : 236 pages
Book Rating : 4.5/5 (374 download)
Download or read book Advances in Silicon Carbide Processing and Applications written by Stephen E. Saddow and published by Artech House. This book was released on 2004 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the latest advances in SiC (Silicon Carbide) technology from the leading experts in the field with this new cutting-edge resource. The book is your single source for in-depth information on both SiC device fabrication and system-level applications. This comprehensive reference begins with an examination of how SiC is grown and how defects in SiC growth can affect working devices. Key issues in selective doping of SiC via ion implantation are covered with special focus on implant conditions and electrical activation of implants. SiC applications discussed include chemical sensors, motor-control components, high-temperature gas sensors, and high-temperature electronics. By cutting through the arcane data and jargon surrounding the hype on SiC, this book gives an honest assessment of today's SiC technology and shows you how SiC can be adopted in developing tomorrow's applications.
Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (113 download)
Download or read book Silicon carbide a high temperature semiconductor : proceedings written by J. R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Joseph R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (917 download)
Download or read book Silicon carbide written by Joseph R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. Anthony Powell
Publisher :
ISBN 13 :
Total Pages : 5 pages
Book Rating : 4.:/5 (13 download)
Download or read book Silicon Carbide, a High Temperature Semiconductor written by J. Anthony Powell and published by . This book was released on 1983 with total page 5 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : J. R. O'Connor
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (252 download)
Download or read book Silicon Carbide written by J. R. O'Connor and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sergey Rumyantsev
Publisher : World Scientific
ISBN 13 : 981447777X
Total Pages : 342 pages
Book Rating : 4.8/5 (144 download)
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Author : JOSEPH R. ( EDITOR ) O'CONNOR
Publisher :
ISBN 13 :
Total Pages : 521 pages
Book Rating : 4.:/5 (32 download)
Download or read book SILICON CARBIDE. A HIGH TEMPERATURE SEMICONDUCTOR ; PROCEEDINGS. CONFERENCE, BOSTON 1959 written by JOSEPH R. ( EDITOR ) O'CONNOR and published by . This book was released on 1960 with total page 521 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book SILICON CARBIDE- A HIGH TEMPERATURE SEMICONDUCTOR- PROCEEDINGS OF A CONFERENCE ON SILICON CARBIDE- ELECTRONICS RESEARCH DIRECTORATE, AIR FORCE CAMBRIDGE RESEARCH CENTER. written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Randall Kirschman
Publisher : Wiley-IEEE Press
ISBN 13 : 9780780334779
Total Pages : 0 pages
Book Rating : 4.3/5 (347 download)
Download or read book High-Temperature Electronics written by Randall Kirschman and published by Wiley-IEEE Press. This book was released on 1998-09-01 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "HIGH-TEMPERATURE ELECTRONICS provides expert coverage of the applications, characteristics, design, selection, and operation of electronic devices and circuits at temperatures above the conventional limit of 125 degrees Celsius. This edited volume contains approximately 100 key reprinted papers covering a wide range of topics related to high-temperature electronics, eight invited papers, extensive references, and a comprehensive bibliography. Containing more than 200 pages of new material, it brings the reader a well-rounded review of high-temperature electronics from its beginnings decades ago through the present and beyond to possible future technologies. The scope of HIGH TEMPERATURE ELECTRONICS includes active components from standard and advanced semiconductor materials, passive components, as well as technologies for metallizations, interconnections, and the assembly and packaging of electronic components. This book will provide active researchers, technology developers, managers, materials scientists, and advanced students with a sound fundamental grounding in high-temperature electronics technology." Sponsored by: IEEE Components, Packaging, and Manufacturing Technology Society.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313550
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-09-23 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 250 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
