Shallow Impurity Centers In Semiconductors

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Shallow Impurity Centers in Semiconductors

Author : A. Baldereschi
Publisher : Elsevier
ISBN 13 : 0080984592
Total Pages : 315 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Shallow Impurity Centers in Semiconductors by : A. Baldereschi

Download or read book Shallow Impurity Centers in Semiconductors written by A. Baldereschi and published by Elsevier. This book was released on 2012-12-02 with total page 315 pages. Available in PDF, EPUB and Kindle. Book excerpt: Shallow Impurity Centers in Semiconductors presents the proceedings of the Second International Conference on Shallow Impurity Centers/Fourth Trieste IUPAP-ICTP Semiconductor Symposium, held at the International Center for Theoretical Physics in Trieste, Italy, on July 28 to August 1, 1986. The book presents the perspectives of some of the leading scientists in the field who address basic physical aspects and device implications, novel phenomena, recent experimental and theoretical techniques, and the behavior of impurities in new semiconductor materials. Organized into 22 chapters, the book begins with an overview of the early years of shallow impurity states before turning to a discussion of progress in spectroscopy of shallow centers in semiconductors since 1960. It then looks at theoretical and experimental aspects of hydrogen diffusion and shallow impurity passivation in semiconductors, along with optical excitation spectroscopy of isolated double donors in silicon. The book methodically walks the reader through recent research on double acceptors using near-, mid-, and far-infrared spectroscopy, the far-infrared absorption spectrum of elemental shallow donors and acceptors in germanium, and impurity spectra in stress-induced uniaxial germanium using Zeeman spectroscopy. Other papers focus on the theoretical properties of hydrogenic impurities in quantum wells, lattice relaxations at substitutional impurities in semiconductors, shallow bound excitons in silver halides, and the electronic structure of bound excitons in semiconductors. The book concludes with a chapter that reviews picosecond spectroscopy experiments performed in III-V compounds and alloy semiconductors. This volume will be useful to physicists and researchers who are working on shallow impurity centers in semiconductor physics.

Doping in III-V Semiconductors

Author : E. Fred Schubert
Publisher : E. Fred Schubert
ISBN 13 : 0986382639
Total Pages : 624 pages
Book Rating : 4.9/5 (863 download)

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Book Synopsis Doping in III-V Semiconductors by : E. Fred Schubert

Download or read book Doping in III-V Semiconductors written by E. Fred Schubert and published by E. Fred Schubert. This book was released on 2015-08-18 with total page 624 pages. Available in PDF, EPUB and Kindle. Book excerpt: This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes various doping techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III-V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, autocompensation, and maximum attainable dopant concentration. Redistribution effects are important in semiconductor microstructures. Linear and non-linear diffusion, different microscopic diffusion mechanisms, surface segregation, surface drift, surface migration, impurity-induced disordering, and the respective physical driving mechanisms are illustrated. Topics related to basic impurity theory include the hydrogenic model for shallow impurities, linear screening, density of states, classical and quantum statistics, the law of mass action, as well as many analytic approximations for the Fermi-Dirac integral for three-, two- and one dimensional systems. The timely topic of highly doped semiconductors, including band tails, impurity bands, bandgap renormalization, the Mott transition, and the Burstein-Moss shift, is discussed as well. Doping is essential in many semiconductor heterostructures including high-mobility selectively doped heterostructures, quantum well and quantum barrier structures, doping superlattice structures and d-doping structures. Technologically important deep levels are summarized, including Fe, Cr, and the DX-center, the EL2 defect, and rare-earth impurities. The properties of deep levels are presented phenomenologically, including emission, capture, Shockley-Read recombination, the Poole-Frenkel effect, lattice relaxation, and other effects. The final chapter is dedicated to the experimental characterization of impurities. This book will be of interest to graduate students, researchers and development engineers in the fields of electrical engineering, materials science, physics, and chemistry working on semiconductors. The book may also be used as a text for graduate courses in electrical engineering and materials science.

Shallow Impurities in Semiconductors

Author : Tsunemasa Taguchi
Publisher :
ISBN 13 :
Total Pages : 566 pages
Book Rating : 4.:/5 (318 download)

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Book Synopsis Shallow Impurities in Semiconductors by : Tsunemasa Taguchi

Download or read book Shallow Impurities in Semiconductors written by Tsunemasa Taguchi and published by . This book was released on 1993 with total page 566 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Fundamentals of Semiconductors

Author : Peter YU
Publisher : Springer Science & Business Media
ISBN 13 : 3642007104
Total Pages : 778 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Fundamentals of Semiconductors by : Peter YU

Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2010-04-07 with total page 778 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.

Shallow Impurities in Semiconductors V

Author : Tsunemasa Taguchi
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035704724
Total Pages : 542 pages
Book Rating : 4.0/5 (357 download)

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Book Synopsis Shallow Impurities in Semiconductors V by : Tsunemasa Taguchi

Download or read book Shallow Impurities in Semiconductors V written by Tsunemasa Taguchi and published by Trans Tech Publications Ltd. This book was released on 1993-01-01 with total page 542 pages. Available in PDF, EPUB and Kindle. Book excerpt: The volume presents the proceedings of the 5th International Conference on Shallow Impurities in Semiconductors, held in Kobe, Japan, August 1992.

Shallow Impurities in Semiconductors

Author : Gordon Davies
Publisher :
ISBN 13 :
Total Pages : 506 pages
Book Rating : 4.:/5 (45 download)

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Book Synopsis Shallow Impurities in Semiconductors by : Gordon Davies

Download or read book Shallow Impurities in Semiconductors written by Gordon Davies and published by . This book was released on 1991 with total page 506 pages. Available in PDF, EPUB and Kindle. Book excerpt: I. TECHNIQUES . II. d DOPING . III. QUANTUM WELLS . IV. HYDROGEN IN SEMICONDUCTORS . V. BOUND EXCITONS . VI. IMPURITIES IN SILICON . VII. IMPURITIES IN Ge AND GexSi1-x. VIII. IMPURITIES IN COMPOUND SEMICONDUCTORS . IX. DX CENTRES .

Nonradiative Recombination in Semiconductors

Author : V.N. Abakumov
Publisher : Elsevier
ISBN 13 : 0444600825
Total Pages : 337 pages
Book Rating : 4.4/5 (446 download)

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Book Synopsis Nonradiative Recombination in Semiconductors by : V.N. Abakumov

Download or read book Nonradiative Recombination in Semiconductors written by V.N. Abakumov and published by Elsevier. This book was released on 1991-07-26 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years, great progress has been made in the understandingof recombination processes controlling the number of excessfree carriers in semiconductors under nonequilibrium conditions. As a result, it is now possible to give a comprehensivetheoretical description of these processes. The authors haveselected a number of experimental results which elucidate theunderlying physical problems and enable a test of theoreticalmodels.The following topics are dealt with: phenomenological theory ofrecombination, theoretical models of shallow and deep localizedstates, cascade model of carrier capture by impurity centers,capture restricted by diffusion, multiphonon processes, Augerprocesses, effect of electric field on capture and thermalemission of carriers.

Impurities in Semiconductors

Author : Victor I. Fistul
Publisher : CRC Press
ISBN 13 : 0203299256
Total Pages : 448 pages
Book Rating : 4.2/5 (32 download)

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Book Synopsis Impurities in Semiconductors by : Victor I. Fistul

Download or read book Impurities in Semiconductors written by Victor I. Fistul and published by CRC Press. This book was released on 2004-01-27 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: Although there is a good deal of research concerning semiconductor impurities available, most publications on the subject are very specialized and very theoretical. Until now, the field lacked a text that described the current experimental data, applications, and theory concerning impurities in semiconductor physics. Impurities in Semicondu

Optical Phenomena in Semiconductor Structures of Reduced Dimensions

Author : D.J. Lockwood
Publisher : Springer Science & Business Media
ISBN 13 : 9401119120
Total Pages : 443 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Optical Phenomena in Semiconductor Structures of Reduced Dimensions by : D.J. Lockwood

Download or read book Optical Phenomena in Semiconductor Structures of Reduced Dimensions written by D.J. Lockwood and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 443 pages. Available in PDF, EPUB and Kindle. Book excerpt: Remarkable advances in semiconductor growth and processing technologies continue to have a profound impact on condensed-matter physics and to stimulate the invention of novel optoelectronic effects. Intensive research on the behaviors of free carriers has been carried out in the two-dimensional systems of semiconductor heterostructures and in the one and zero-dimensional systems of nanostructures created by the state-of-the-art fabrication methods. These studies have uncovered unexpected quantum mechanical correlations that arise because of the combined effects of strong electron-electron interactions and wave function confinement associated with reduced dimensionality. The investigations of these phenomena are currently at the frontiers of condensed-matter physics. They include areas like the fractional quantum Hall effect, the dynamics of electrons on an ultra short (femtosecond) time scale, electron behavior in quantum wires and dots, and studies of electron tunneling phenomena in ultra small semiconductor structures. Optical techniques have made important contributions to these fields in recent years, but there has been no coherent review of this work until now. The book provides an overview of these recent developments that will be of interest to semiconductor materials scientists in university, government and industrial laboratories.

Optical Properties of Semiconductors

Author : N. G. Basov
Publisher : Springer Science & Business Media
ISBN 13 : 1461575486
Total Pages : 189 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Optical Properties of Semiconductors by : N. G. Basov

Download or read book Optical Properties of Semiconductors written by N. G. Basov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 189 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fundamentals of Semiconductor

Author : Peter YU
Publisher : Springer Science & Business Media
ISBN 13 : 3662033135
Total Pages : 627 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Fundamentals of Semiconductor by : Peter YU

Download or read book Fundamentals of Semiconductor written by Peter YU and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 627 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bridging the gap between a general solid-state physics textbook and research articles, the renowned authors provide detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors. Their approach is a physical and intuitive one, rather than formal and pedantic. This textbook has been written with both students and researchers in mind, and the authors therefore present theories to explain experimental results. Throughout, the emphasis is on understanding the physical properties of Si, and similar tetrahedrally coordinated semiconductors, with explanations based on physical insights. Each chapter is enriched by an extensive collection of tables of material parameters, figures and problems -- many of the latter 'lead students by the hand' to arrive at the results.

Electronic Properties of Doped Semiconductors

Author : B.I. Shklovskii
Publisher : Springer Science & Business Media
ISBN 13 : 3662024039
Total Pages : 400 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Electronic Properties of Doped Semiconductors by : B.I. Shklovskii

Download or read book Electronic Properties of Doped Semiconductors written by B.I. Shklovskii and published by Springer Science & Business Media. This book was released on 2013-11-09 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: First-generation semiconductors could not be properly termed "doped- they were simply very impure. Uncontrolled impurities hindered the discovery of physical laws, baffling researchers and evoking pessimism and derision in advocates of the burgeoning "pure" physical disciplines. The eventual banish ment of the "dirt" heralded a new era in semiconductor physics, an era that had "purity" as its motto. It was this era that yielded the successes of the 1950s and brought about a new technology of "semiconductor electronics". Experiments with pure crystals provided a powerful stimulus to the develop ment of semiconductor theory. New methods and theories were developed and tested: the effective-mass method for complex bands, the theory of impurity states, and the theory of kinetic phenomena. These developments constitute what is now known as semiconductor phys ics. In the last fifteen years, however, there has been a noticeable shift towards impure semiconductors - a shift which came about because it is precisely the impurities that are essential to a number of major semiconductor devices. Technology needs impure semiconductors, which unlike the first-generation items, are termed "doped" rather than "impure" to indicate that the impurity levels can now be controlled to a certain extent.

Semiconductor Physical Electronics

Author : Sheng S. Li
Publisher : Springer Science & Business Media
ISBN 13 : 146130489X
Total Pages : 514 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Semiconductor Physical Electronics by : Sheng S. Li

Download or read book Semiconductor Physical Electronics written by Sheng S. Li and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this book is to provide the reader with a self-contained treatment of fundamen tal solid state and semiconductor device physics. The material presented in the text is based upon the lecture notes of a one-year graduate course sequence taught by this author for many years in the ·Department of Electrical Engineering of the University of Florida. It is intended as an introductory textbook for graduate students in electrical engineering. However, many students from other disciplines and backgrounds such as chemical engineering, materials science, and physics have also taken this course sequence, and will be interested in the material presented herein. This book may also serve as a general reference for device engineers in the semiconductor industry. The present volume covers a wide variety of topics on basic solid state physics and physical principles of various semiconductor devices. The main subjects covered include crystal structures, lattice dynamics, semiconductor statistics, energy band theory, excess carrier phenomena and recombination mechanisms, carrier transport and scattering mechanisms, optical properties, photoelectric effects, metal-semiconductor devices, the p--n junction diode, bipolar junction transistor, MOS devices, photonic devices, quantum effect devices, and high speed III-V semiconductor devices. The text presents a unified and balanced treatment of the physics of semiconductor materials and devices. It is intended to provide physicists and mat erials scientists with more device backgrounds, and device engineers with a broader knowledge of fundamental solid state physics.

Advances in Imaging and Electron Physics

Author :
Publisher : Academic Press
ISBN 13 : 008057775X
Total Pages : 473 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Advances in Imaging and Electron Physics by :

Download or read book Advances in Imaging and Electron Physics written by and published by Academic Press. This book was released on 1999-09-28 with total page 473 pages. Available in PDF, EPUB and Kindle. Book excerpt: Advances in Imaging & Electron Physics merges two long-running serials--Advances in Electronics & Electron Physics and Advances in Optical & Electron Microscopy. The series features extended articles on the physics of electron devices (especially semiconductor devices), particle optics at high and low energies, microlithography, image science and digital image processing, electromagnetic wave propagation, electron microscopy, and the computing methods used in all these domains.

Crystalline Semiconducting Materials and Devices

Author : Paul N. Butcher
Publisher : Springer Science & Business Media
ISBN 13 : 1475799004
Total Pages : 657 pages
Book Rating : 4.4/5 (757 download)

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Book Synopsis Crystalline Semiconducting Materials and Devices by : Paul N. Butcher

Download or read book Crystalline Semiconducting Materials and Devices written by Paul N. Butcher and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 657 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is concerned primarily with the fundamental theory underlying the physical and chemical properties of crystalIine semiconductors. After basic introductory material on chemical bonding, electronic band structure, phonons, and electronic transport, some emphasis is placed on surface and interfacial properties, as weil as effects of doping with a variety of impurities. Against this background, the use of such materials in device physics is examined and aspects of materials preparation are discussed briefty. The level of presentation is suitable for postgraduate students and research workers in solid-state physics and chemistry, materials science, and electrical and electronic engineering. Finally, it may be of interest to note that this book originated in a College organized at the International Centre for Theoretical Physics, Trieste, in Spring 1984. P. N. Butcher N. H. March M. P. Tosi vii Contents 1. Bonds and Bands in Semiconductors 1 E. Mooser 1. 1. Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1. 2. The Semiconducting Bond . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1. 3. Bond Approach Versus Band Model. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 1. 4. Construction of the Localized X by Linear Combination of n Atomic Orbitals . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 1. 5. The General Octet Rule . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23 1. 6. The Aufbau-Principle of the Crystal Structure of Semiconductors . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26 1. 7. A Building Principle for Polyanionic Structures . . . . . . . . . . . . . . . . . . . . . . 29 I. H. Structural Sorting . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 39 1. 9. Chemical Bonds and Semiconductivity in Transition-Element Compounds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 46 1. 10. Conclusion . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 54 2. Electronic Band Structure . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 G. Grosso 2. 1. Two Different Strategies for Band-Structure Calculations . . . . . . . 55 2. 2. The Tight-Binding Method . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Wide-band-gap Semiconductors

Author : C.G. Van de Walle
Publisher : Elsevier
ISBN 13 : 0444599177
Total Pages : 635 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Wide-band-gap Semiconductors by : C.G. Van de Walle

Download or read book Wide-band-gap Semiconductors written by C.G. Van de Walle and published by Elsevier. This book was released on 2012-12-02 with total page 635 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide-band-gap semiconductors have been a research topic for many decades. However, it is only in recent years that the promise for technological applications came to be realized; simultaneously an upsurge of experimental and theoretical activity in the field has been witnessed. Semiconductors with wide band gaps exhibit unique electronic and optical properties. Their low intrinsic carrier concentrations and high breakdown voltage allow high-temperature and high-power applications (diamond, SiC etc.). The short wavelength of band-to-band transitions allows emission in the green, blue, or even UV region of the spectrum (ZnSe, GaN, etc.). In addition, many of these materials have favorable mechanical and thermal characteristics. These proceedings reflect the exciting progress made in this field. Successful p-type doping of ZnSe has recently led to the fabrication of blue-green injection lasers in ZnSe; applications of short-wavelength light-emitting devices range from color displays to optical storage. In SiC, advances in growth techniques for bulk as well as epitaxial material have made the commercial production of high-temperature and high-frequency devices possible. For GaN, refinement of growth procedures and new ways of obtaining doped material have resulted in blue-light-emitting diodes and opened the road to the development of laser diodes. Finally, while the quality of artificial diamond is not yet high enough for electronic applications, the promise it holds in terms of unique material properties is encouraging intense activity in the field. This volume contains contributions from recognized experts presently working on different material systems in the field. The papers cover the theoretical, experimental and application-oriented aspects of this exciting topic.

Computational Chemistry And Chemical Engineering - Proceedings Of The Third Unam-cray Supercomputing Confrence

Author : Gerardo Cisneros
Publisher : World Scientific
ISBN 13 : 9814545805
Total Pages : 421 pages
Book Rating : 4.8/5 (145 download)

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Book Synopsis Computational Chemistry And Chemical Engineering - Proceedings Of The Third Unam-cray Supercomputing Confrence by : Gerardo Cisneros

Download or read book Computational Chemistry And Chemical Engineering - Proceedings Of The Third Unam-cray Supercomputing Confrence written by Gerardo Cisneros and published by World Scientific. This book was released on 1997-10-31 with total page 421 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a wide-ranging and up-to-date description of state-of-the-art computational methodologies in chemistry and chemical engineering. It displays a representative mix of topics on the computation and modeling of chemical systems of all sizes, from the very small (atomic) to the very large (industrial). The book constitutes an excellent overview for graduate students as well as a critical update for researchers.