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Semiconductor Process And Device Performance Modelling Volume 490
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Book Synopsis Semiconductor Process and Device Performance Modelling: by : Scott T. Dunham
Download or read book Semiconductor Process and Device Performance Modelling: written by Scott T. Dunham and published by Cambridge University Press. This book was released on 2014-06-05 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: The concept of a 'virtual semiconductor fab' requires a focused effort among engineering, physics, chemistry, materials, mathematical and computational sciences. Although widely used by the semiconductor industry, current technology computer-aided design (TCAD) struggles to keep pace with new generations of IC technology. The semiconductor industry needs improved, predictive physically-based modelling and simulation capabilities to decrease cost, improve efficiency, and provide TCAD tools to process developers before production begins. Without the use of more advanced next generation TCAD models, future IC technology development will slow as a result of expensive, time-consuming experimental validation of processes and device performance. This book brings together researchers from industry, universities and national laboratories to highlight advances in TCAD, and to identify critical areas for future emphasis. Both silicon and compound semiconductor process and device performance modelling are featured. Topics include: bulk process modelling; equipment modelling; topography modelling; and characterization and device modelling.
Book Synopsis Semiconductor Process and Device Performance Modelling: Volume 490 by : Scott T. Dunham
Download or read book Semiconductor Process and Device Performance Modelling: Volume 490 written by Scott T. Dunham and published by . This book was released on 1998-10-02 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: Highlights recent advances in technology computer-aided design (TCAD) and identifies critical areas for future emphasis. The 39 contributions from the December 1997 symposium cover four main topics--bulk process modeling, equipment modeling, topography modeling, and characterization and device modeling. Paper topics include arsenic deactivation in silicon; defect reactions induced by reactive ion etching; optimization of AMT barrel reactors for silicon epitaxy; grain structure evolution and the reliability of Al(Cu) thin film interconnects; and improved quantitative mobility spectrum analysis. Annotation copyrighted by Book News, Inc., Portland, OR
Download or read book CVD XV written by Mark Donald Allendorf and published by The Electrochemical Society. This book was released on 2000 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Essderc'98 written by and published by Atlantica Séguier Frontières. This book was released on 1998 with total page 680 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Silicon Front-end Technology--materials Processing and Modelling by : Nicholas E. B. Cowern
Download or read book Silicon Front-end Technology--materials Processing and Modelling written by Nicholas E. B. Cowern and published by . This book was released on 1998 with total page 258 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon by : Peter Pichler
Download or read book Intrinsic Point Defects, Impurities, and Their Diffusion in Silicon written by Peter Pichler and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 576 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book contains the first comprehensive review of intrinsic point defects, impurities and their complexes in silicon. Besides compiling the structures, energetic properties, identified electrical levels and spectroscopic signatures, and the diffusion behaviour from investigations, it gives a comprehensive introduction into the relevant fundamental concepts.
Book Synopsis Semiconductor Defect Engineering: Volume 994 by : S. Ashok
Download or read book Semiconductor Defect Engineering: Volume 994 written by S. Ashok and published by . This book was released on 2007-09-10 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners. This book, first published in 2007, focuses on the application of defects and impurities in current and emerging semiconductor technologies.
Book Synopsis Advanced Metallization Conference in ... by :
Download or read book Advanced Metallization Conference in ... written by and published by . This book was released on 2004 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics of Semiconductor Devices by : K. N. Bhat
Download or read book Physics of Semiconductor Devices written by K. N. Bhat and published by Alpha Science Int'l Ltd.. This book was released on 2004 with total page 1310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Contributed papers of the workshop held at IIT, Madras, in 2003.
Book Synopsis Sic Materials And Devices - Volume 1 by : Sergey Rumyantsev
Download or read book Sic Materials And Devices - Volume 1 written by Sergey Rumyantsev and published by World Scientific. This book was released on 2006-07-25 with total page 342 pages. Available in PDF, EPUB and Kindle. Book excerpt: After many years of research and development, silicon carbide has emerged as one of the most important wide band gap semiconductors. The first commercial SiC devices — power switching Schottky diodes and high temperature MESFETs — are now on the market. This two-volume book gives a comprehensive, up-to-date review of silicon carbide materials properties and devices. With contributions by recognized leaders in SiC technology and materials and device research, SiC Materials and Devices is essential reading for technologists, scientists and engineers who are working on silicon carbide or other wide band gap materials and devices. The volumes can also be used as supplementary textbooks for graduate courses on silicon carbide and wide band gap semiconductor technology.
Book Synopsis Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials: Volume 504 by :
Download or read book Atomistic Mechanisms in Beam Synthesis and Irradiation of Materials: Volume 504 written by and published by Mrs Proceedings. This book was released on 1999-03 with total page 488 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some 70 papers focus on atomistic processes that occur in metals, ceramics and glasses, and polymers exposed to energetic beams in order to synthesize or modify a material. Sections also explore defects and modelling, energetic particle synthesis and mechanical properties, and optical materials and nanoclusters. The invited papers cover defect evolution in ion-implanted Silicon from point to extended defects, achievements of the Japanese government and university projects in ion and laser beam technology, forming metastable materials by ion-beam-assisted deposition and its application to metal clusters in ceramic matrices, and the mesoscale engineering of nanocomposite nonlinear optical materials. Annotation copyrighted by Book News, Inc., Portland, OR
Book Synopsis Handbook of Optoelectronic Device Modeling and Simulation by : Joachim Piprek
Download or read book Handbook of Optoelectronic Device Modeling and Simulation written by Joachim Piprek and published by CRC Press. This book was released on 2017-10-10 with total page 835 pages. Available in PDF, EPUB and Kindle. Book excerpt: • Provides a comprehensive survey of fundamental concepts and methods for optoelectronic device modeling and simulation. • Gives a broad overview of concepts with concise explanations illustrated by real results. • Compares different levels of modeling, from simple analytical models to complex numerical models. • Discusses practical methods of model validation. • Includes an overview of numerical techniques.
Book Synopsis Index of Conference Proceedings by : British Library. Document Supply Centre
Download or read book Index of Conference Proceedings written by British Library. Document Supply Centre and published by . This book was released on 1999 with total page 844 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology by : G. R. Srinivasan
Download or read book Proceedings of the Fourth International Symposium of Process Physics and Modeling in Semiconductor Technology written by G. R. Srinivasan and published by The Electrochemical Society. This book was released on 1996 with total page 546 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Device Modelling by : Christopher M. Snowden
Download or read book Semiconductor Device Modelling written by Christopher M. Snowden and published by Springer. This book was released on 2011-10-08 with total page 259 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor device modelling has developed in recent years from being solely the domain of device physicists to span broader technological disciplines involved in device and electronic circuit design and develop ment. The rapid emergence of very high speed, high density integrated circuit technology and the drive towards high speed communications has meant that extremely small-scale device structures are used in contempor ary designs. The characterisation and analysis of these devices can no longer be satisfied by electrical measurements alone. Traditional equivalent circuit models and closed-form analytical models cannot always provide consis tently accurate results for all modes of operation of these very small devices. Furthermore, the highly competitive nature of the semiconductor industry has led to the need to minimise development costs and lead-time associated with introducing new designs. This has meant that there has been a greater demand for models capable of increasing our understanding of how these devices operate and capable of predicting accurate quantitative results. The desire to move towards computer aided design and expert systems has reinforced the need for models capable of representing device operation under DC, small-signal, large-signal and high frequency operation. It is also desirable to relate the physical structure of the device to the electrical performance. This demand for better models has led to the introduction of improved equivalent circuit models and a upsurge in interest in using physical models.
Book Synopsis Physical Models for Semiconductor Devices by : John E. Carroll
Download or read book Physical Models for Semiconductor Devices written by John E. Carroll and published by Hodder Education. This book was released on 1974 with total page 253 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Semiconductor Material and Device Characterization by : Dieter K. Schroder
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
