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Secondary Ion Mass Spectrometric Studies Of Group Iii Group V Semiconductor Materials
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Book Synopsis Secondary Ion Mass Spectrometric Studies of Group III - Group V Semiconductor Materials by : Gerald Joseph Scilla
Download or read book Secondary Ion Mass Spectrometric Studies of Group III - Group V Semiconductor Materials written by Gerald Joseph Scilla and published by . This book was released on 1977 with total page 356 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 652 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Secondary Ion Mass Spectrometry by : Paul van der Heide
Download or read book Secondary Ion Mass Spectrometry written by Paul van der Heide and published by John Wiley & Sons. This book was released on 2014-08-19 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: Serves as a practical reference for those involved in Secondary Ion Mass Spectrometry (SIMS) • Introduces SIMS along with the highly diverse fields (Chemistry, Physics, Geology and Biology) to it is applied using up to date illustrations • Introduces the accepted fundamentals and pertinent models associated with elemental and molecular sputtering and ion emission • Covers the theory and modes of operation of the instrumentation used in the various forms of SIMS (Static vs Dynamic vs Cluster ion SIMS) • Details how data collection/processing can be carried out, with an emphasis placed on how to recognize and avoid commonly occurring analysis induced distortions • Presented as concisely as believed possible with All sections prepared such that they can be read independently of each other
Book Synopsis Time-of-Flight Secondary Ion Mass Spectrometry Studies of Cluster Ion Analysis for Semiconductors and Diffusion of Manganese in Gallium Arsenide at Low Temperatures by : Robyn Goacher
Download or read book Time-of-Flight Secondary Ion Mass Spectrometry Studies of Cluster Ion Analysis for Semiconductors and Diffusion of Manganese in Gallium Arsenide at Low Temperatures written by Robyn Goacher and published by . This book was released on 2010 with total page 338 pages. Available in PDF, EPUB and Kindle. Book excerpt: Secondary Ion Mass Spectrometry (SIMS) is an established method for the quantitative analysis of dopants in semiconductors. The quasi-parallel mass acquisition of Time-of-Flight SIMS, along with the development of polyatomic primary ions, have rapidly increased the use of SIMS for analysis of organic and biological specimens. However, the advantages and disadvantages of using cluster primary ions for quantitative analysis of inorganic materials are not clear. The research described in this dissertation investigates the consequences of using polyatomic primary ions for the analysis of inorganic compounds in ToF-SIMS. Furthermore, the diffusion of Mn in GaAs, which is important in Spintronic material applications such as spin injection, is also studied by quantitative ToF-SIMS depth profiling.^In the first portion of this work, it was discovered that primary ion bombardment of pre-sputtered compound semiconductors GaAs and InP for the purpose of spectral analysis resulted in the formation of cluster secondary ions, as well as atomic secondary ions (Chapter 2). In particular, bombardment using a cluster primary ion such as Bi3q+ or C60q+ resulted in higher yields of high-mass cluster secondary ions. These cluster secondary ions did not have bulk stoichiometry, "non-stoichiometric", in contrast to the paradigm of stoichiometric cluster ions generated from salts. This is attributed to the covalent bonding of the compound semiconductors, as well as to preferential sputtering. The utility of high-mass cluster secondary ions in depth profiling is also discussed.^Relative sensitivity factors (RSFs) calculated for ion-implanted Fe and Mn samples in GaAs also exhibit differences based on whether monatomic or polyatomic primary ions are utilized (Chapter 3). These RSFs are important for the quantitative conversion of intensity to concentration. When Bi32+ primary ions are used for analysis instead of Bi+ primary ions, there is a significantly higher proportion of Mn and Fe ions present in the spectra, as referenced to the matrix species. The magnitude of this effect differs depending on the sputtering ion, Cs or C60. The use of C60cluster primary ions for depth profiling of GaAs is also investigated (Chapter 4). In particular, for quantitative depth profiling, parameters such as depth resolution, ion and sputter yields, and relative sensitivity factors are pertinent to profiling thin layered structures quantitatively and quickly.^C60 sputtering is compared to Cs sputtering in all of these aspects. It is found that 10 keV C60+ is advantageous for the analysis of metals (such as Au contacts on Si) but that previously reported roughness problems prohibit successful analysis in Si. For Al delta layers and quantum wells in GaAs, C60q+ sputtering induced very little roughness in the sample, and resulted in high ion yields and excellent signal-to-noise as compared to Cs+ sputtering. However, the depth resolution of C60 is at best equivalent to 1 keV Cs+ and does not extend into the sub 2-nm range. Furthermore, C60 sputtering results in significant carbon implantation. In the second portion of this work, quantitative ToF-SIMS depth profiling was used to evaluate the diffusion of Mn into GaAs. Samples were prepared by Molecular Beam Epitaxy in the department of Physics.^Mn diffusion from MnAs was investigated first, and Mn diffusion from layered epitaxial structures of GaAs / Ga1-xMnxAs / GaAs was investigated second. Diffusion experiments were conducted by annealing portions of the samples in sealed glass ampoules at low temperatures (200-400°C). Different sputtering rates were measured for MnAs and GaAs and the measured depth profiles were corrected for these effects. RSFs measured for Mn ion-implanted standards were used to calibrate the intensity scale. For diffusion from MnAs, thin MnAs layers resulted in no measurable changes except in the surface transient. For thick MnAs layers, it was determined that substantial loss of As occurred at 400°C, resulting in severe sample roughening, which inhibited proper SIMS analysis.^Results for the diffusion of Mn out of a thick buried layer of Ga1-xMnxAs show that annealing induces diffusion of Mn species from the Ga1-xMnxAs layer into the neighboring GaAs with an activation energy of 0.69"0.09 eV. This results in doping of the GaAs layer, which is detrimental to spin injection for Spintronics devices.
Book Synopsis Secondary Ion Mass Spectrometry SIMS III by : A. Benninghoven
Download or read book Secondary Ion Mass Spectrometry SIMS III written by A. Benninghoven and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 455 pages. Available in PDF, EPUB and Kindle. Book excerpt: Following the biannual meetings in MUnster (1977) and Stanford (1979) the Third International Conference on Secondary Ion Mass Spectroscopy was held in Budapest from August 31 to September 5, 1981. The Conference was attended by about 250 participants. The success of the 1981 Conference in Budapest was especially due to the excellent preparation and organization by the Local Organizing Committee. We would also like to acknowledge the generous hospitality and cooperation of the Hungarian Academy of Sciences. Japan was chosen to be the location for the next conference in 1983. SIMS conferences are devoted to two main issues: improving the application of SIMS in different and especially new fields, and understanding the ion formation process. Needless to say, there is a very strong interaction be tween these two issues. The major reason for the rapid increase in SIMS activities in the last few years is the fact that SIMS is a powerful tool for bulk, thin-film, and surface analysis. Today it is extensively and successfully applied in such different fields as depth profiling and imaging of semiconductor devices, in isotope analysis of minerals, in imaging biological tissues, in the study of catalysts and catalytic reactions, in oxide-layer analysis on metals in drug detection, and in the analysis of body fluids.
Book Synopsis Secondary Ion Mass Spectrometry by : Fred Stevie
Download or read book Secondary Ion Mass Spectrometry written by Fred Stevie and published by Momentum Press. This book was released on 2015-09-15 with total page 233 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book was written to explain a technique that requires an understanding of many details in order to properly obtain and interpret the data obtained. It also will serve as a reference for those who need to provide SIMS data. The book has over 200 figures and the references allow one to trace development of SIMS and understand the many details of the technique.
Book Synopsis Secondary Ion Mass Spectrometry by : J. C. Vickerman
Download or read book Secondary Ion Mass Spectrometry written by J. C. Vickerman and published by Oxford University Press, USA. This book was released on 1989 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an overview of the phenomenology, technology and application of secondary ion mass spectrometry as a technique for materials analysis. This approach is developing into one of the most effective methods of characterizing the composition and chemical state of the surface and sub-surface layers of solid materials. The first three chapters introduce the basic physical and chemical principles involved and the theories which have been proposed to explain the process. Subsequent chapters describe the instrumental components of the SIMS apparatus, the use of SIMS as an analytical tool, and the development of the techniques of sputtered neutral mass spectrometry and laser microprobe and plasma desorption mass spectrometry. Many practical examples are featured to illustrate the application of SIMS to real problems, possible pitfalls are pointed out, and data of use to analysts are collected in appendices. The book is a practical guide suitable for scientists in all fields who wish to use this valuable analytical technique.
Book Synopsis An Introduction to Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and its Application to Materials Science by : Sarah Fearn
Download or read book An Introduction to Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) and its Application to Materials Science written by Sarah Fearn and published by Morgan & Claypool Publishers. This book was released on 2015-10-16 with total page 67 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book highlights the application of Time-of-Flight Secondary Ion Mass Spectrometry (ToF-SIMS) for high-resolution surface analysis and characterization of materials. While providing a brief overview of the principles of SIMS, it also provides examples of how dual-beam ToF-SIMS is used to investigate a range of materials systems and properties. Over the years, SIMS instrumentation has dramatically changed since the earliest secondary ion mass spectrometers were first developed. Instruments were once dedicated to either the depth profiling of materials using high-ion-beam currents to analyse near surface to bulk regions of materials (dynamic SIMS), or time-of-flight instruments that produced complex mass spectra of the very outer-most surface of samples, using very low-beam currents (static SIMS). Now, with the development of dual-beam instruments these two very distinct fields now overlap.
Book Synopsis Quantitative Analysis of Semiconductor Materials Using Secondary Ion Mass Spectrometry by : Paul Kim Ho Chu
Download or read book Quantitative Analysis of Semiconductor Materials Using Secondary Ion Mass Spectrometry written by Paul Kim Ho Chu and published by . This book was released on 1982 with total page 330 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quantification of Secondary Ion Mass Spectrometry on Semiconductor Materials by : Hendrik Johannes Strydom
Download or read book Quantification of Secondary Ion Mass Spectrometry on Semiconductor Materials written by Hendrik Johannes Strydom and published by . This book was released on 1989 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Secondary Ion Mass Spectroscopy of Solid Surfaces by : V. T. Cherepin
Download or read book Secondary Ion Mass Spectroscopy of Solid Surfaces written by V. T. Cherepin and published by CRC Press. This book was released on 2020-04-28 with total page 127 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume is devoted to the physics, instrumentation and analytical methods of secondary ion mass spectroscopy (SIMS) in relation to solid surfaces. It describes modern models of secondary ion formation and the factors influencing sensitivity of measurements and the range of applications. All the main parts of SIMS instruments are discussed in detail. Emphasising practical applications the book also considers the methods and analytical procedures for constitutional analysis of solids --- including metals, semiconductors, organic and biological samples. Methods of depth profiling, spatially multidimensional analysis and study of processes at the surface, such as adsorption, catalysis and oxidation, are given along with the application of SIMS in combination with other methods of surface analysis.
Book Synopsis Secondary Ion Mass Spectrometry by : A. Benninghoven
Download or read book Secondary Ion Mass Spectrometry written by A. Benninghoven and published by Elsevier Science & Technology. This book was released on 2000 with total page 1092 pages. Available in PDF, EPUB and Kindle. Book excerpt: Hardbound. This biennial conference series is the first international forum covering developments in Secondary Ion Mass Spectrometry. All aspects of the most recent developments in SIMS were covered by the scientific program: fundamentals, instrumentation, methodology, and analytical applications in different fields (semiconductors, polymer and organic materials, life sciences, environmental sciences, earth sciences, materials science). Related techniques and topics were also included.
Book Synopsis Secondary Ion Mass Spectrometry SIMS V by : Alfred Benninghoven
Download or read book Secondary Ion Mass Spectrometry SIMS V written by Alfred Benninghoven and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 578 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the Fifth International Confer ence on Secondary Ion Mass Spectrometry (SIMS V), held at the Capitol Holiday Inn, Washington, DC, USA, from September 30 to October 4, 1985. The conference was the fifth in a series of conferences held bienni ally. Previous conferences were held in Miinster (1977), Stanford (1979), Budapest (1981), and Osaka (1983). SIMS V was organized by Dr. R.J. Colton of the Nayal Research Lab oratory and Dr. D.S. Simons of the National Bureau of Standards un der the auspices of the International Organizing Committee chaired by Prof. A. Benninghoven of the Universitat Miinster. Dr. Richard F.K. Herzog served as the honorary chairman of SIMS V. While Dr. Herzog is best known to the mass spectrometry community for his theoretical development of a mass spectrometer design, known as the Mattauch-Herzog geometry, he also made several early and impor tant contributions to SIMS. In 1949, Herzog and Viehbock published a description of the first instrument designed to study secondary ions pro duced by bombardment from a beam of ions generated in a source that was separated from the sample by a narrow tube. Later at the GCA Cor poration, he brought together a team of researchers including H.J. Liebl, F.G. Riidenauer, W.P. Poschenrieder and F.G. Satkiewicz, who designed and built, and carried out applied research with the first commercial ion microprobe.
Book Synopsis Secondary Ion Mass Spectrometry for the Characterization of Semiconductor Materials by : Howard Elliot Smith
Download or read book Secondary Ion Mass Spectrometry for the Characterization of Semiconductor Materials written by Howard Elliot Smith and published by . This book was released on 1986 with total page 440 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Diffusion in GaAs and other III-V Semiconductors by : David J. Fisher
Download or read book Diffusion in GaAs and other III-V Semiconductors written by David J. Fisher and published by Trans Tech Publications Ltd. This book was released on 1998-03-30 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: The inherently superior electron ballistic properties of GaAs, as compared with those of Si, have generated an ever-increasing pace of research on this semiconductor; thus making this volume a timely source of information.
Book Synopsis CVD of Compound Semiconductors by : Anthony C. Jones
Download or read book CVD of Compound Semiconductors written by Anthony C. Jones and published by John Wiley & Sons. This book was released on 2008-11-20 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: Chemical growth methods of electronic materials are the keystone of microelectronic device processing. This book discusses the applications of metalorganic chemistry for the vapor phase deposition of compound semiconductors. Vapor phase methods used for semiconductor deposition and the materials properties that make the organometallic precursors useful in the electronics industry are discussed for a variety of materials. Topics included: * techniques for compound semiconductor growth * metalorganic precursors for III-V MOVPE * metalorganic precursors for II-VI MOVPE * single-source precursors * chemical beam epitaxy * atomic layer epitaxy Several useful appendixes and a critically selected, up-to-date list of references round off this practical handbook for materials scientists, solid-state and organometallic chemists, and engineers.
Book Synopsis Secondary Ion Mass Spectrometry Sims III by : A. Benninghoven
Download or read book Secondary Ion Mass Spectrometry Sims III written by A. Benninghoven and published by . This book was released on 2014-09-01 with total page 460 pages. Available in PDF, EPUB and Kindle. Book excerpt:
