Scanning Tunneling Microscopy Studies of MBE-Grown GaAs(001) Surfaces

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Publisher :
ISBN 13 :
Total Pages : 478 pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis Scanning Tunneling Microscopy Studies of MBE-Grown GaAs(001) Surfaces by : Edwin John Heller

Download or read book Scanning Tunneling Microscopy Studies of MBE-Grown GaAs(001) Surfaces written by Edwin John Heller and published by . This book was released on 1993 with total page 478 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Beam Epitaxy

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Publisher : OUP Oxford
ISBN 13 : 0191061166
Total Pages : 529 pages
Book Rating : 4.1/5 (91 download)

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Book Synopsis Molecular Beam Epitaxy by : John Orton

Download or read book Molecular Beam Epitaxy written by John Orton and published by OUP Oxford. This book was released on 2015-06-25 with total page 529 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book is a history of Molecular Beam Epitaxy (MBE) as applied to the growth of semiconductor thin films (note that it does not cover the subject of metal thin films). It begins by examining the origins of MBE, first of all looking at the nature of molecular beams and considering their application to fundamental physics, to the development of nuclear magnetic resonance and to the invention of the microwave MASER. It shows how molecular beams of silane (SiH4) were used to study the nucleation of silicon films on a silicon substrate and how such studies were extended to compound semiconductors such as GaAs. From such surface studies in ultra-high vacuum the technique developed into a method of growing high quality single crystal films of a wide range of semiconductors. Comparing this with earlier evaporation methods of deposition and with other epitaxial deposition methods such as liquid phase and vapour phase epitaxy (LPE and VPE). The text describes the development of MBE machines from the early âhome-madeâ variety to that of commercial equipment and show how MBE was gradually refined to produce high quality films with atomic dimensions. This was much aided by the use of various in-situ surface analysis techniques, such as reflection high energy electron diffraction (RHEED) and mass spectrometry, a feature unique to MBE. It looks at various modified versions of the basic MBE process, then proceed to describe their application to the growth of so-called âlow-dimensional structuresâ (LDS) based on ultra-thin heterostructure films with thickness of order a few molecular monolayers. Further chapters cover the growth of a wide range of different compounds and describe their application to fundamental physics and to the fabrication of electronic and opto-electronic devices. The authors study the historical development of all these aspects and emphasise both the (often unexpected) manner of their discovery and development and the unique features which MBE brings to the growth of extremely complex structures with monolayer accuracy.

Molecular Beam Epitaxy

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Publisher : Elsevier
ISBN 13 : 0128121378
Total Pages : 790 pages
Book Rating : 4.1/5 (281 download)

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Book Synopsis Molecular Beam Epitaxy by : Mohamed Henini

Download or read book Molecular Beam Epitaxy written by Mohamed Henini and published by Elsevier. This book was released on 2018-06-27 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt: Molecular Beam Epitaxy (MBE): From Research to Mass Production, Second Edition, provides a comprehensive overview of the latest MBE research and applications in epitaxial growth, along with a detailed discussion and 'how to' on processing molecular or atomic beams that occur on the surface of a heated crystalline substrate in a vacuum. The techniques addressed in the book can be deployed wherever precise thin-film devices with enhanced and unique properties for computing, optics or photonics are required. It includes new semiconductor materials, new device structures that are commercially available, and many that are at the advanced research stage. This second edition covers the advances made by MBE, both in research and in the mass production of electronic and optoelectronic devices. Enhancements include new chapters on MBE growth of 2D materials, Si-Ge materials, AIN and GaN materials, and hybrid ferromagnet and semiconductor structures. - Condenses the fundamental science of MBE into a modern reference, speeding up literature review - Discusses new materials, novel applications and new device structures, grounding current commercial applications with modern understanding in industry and research - Includes coverage of MBE as mass production epitaxial technology and how it enhances processing efficiency and throughput for the semiconductor industry and nanostructured semiconductor materials research community

Scanning Tunneling Microscopy Studies of Surface Kinetic Processes at the Atomic Level

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Publisher :
ISBN 13 :
Total Pages : 458 pages
Book Rating : 4.:/5 (89 download)

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Book Synopsis Scanning Tunneling Microscopy Studies of Surface Kinetic Processes at the Atomic Level by : Yuan-Wu Mo

Download or read book Scanning Tunneling Microscopy Studies of Surface Kinetic Processes at the Atomic Level written by Yuan-Wu Mo and published by . This book was released on 1991 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Semiconductor Interfaces at the Sub-Nanometer Scale

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Publisher : Springer Science & Business Media
ISBN 13 : 940112034X
Total Pages : 252 pages
Book Rating : 4.4/5 (11 download)

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Book Synopsis Semiconductor Interfaces at the Sub-Nanometer Scale by : H.W.M Salemink

Download or read book Semiconductor Interfaces at the Sub-Nanometer Scale written by H.W.M Salemink and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 252 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Advanced Research Workshop on the Physical Properties of Semiconductor Interfaces at the Sub-Nanometer Scale was held from 31 August to 2 September, 1992, in Riva del Garda. Italy. The aim of the workshop was to bring together experts in different aspects of the study of semiconductor interfaces and in small-scale devices where the interface properties can be very significant It was our aim that this would help focus research of the growth and characterization of semiconductor interfaces at the atomic scale on the issues that will have the greatest impact on devices of the future. Some 30 participants from industrial and academic research institutes and from 11 countries contributed to the workshop with papers on their recent wode. . 'There was ample time for discussion after each talk. as well as a summary discussion at the end of the meeting. The major themes of the meeting are described below. The meeting included several talks relating to the different growth techniques used in heteroepitaxial growth of semiconductors. Horikoshi discussed the atomistic processes involved in MBE, MEE and MOCVD, presenting results of experimental RHEED and photoluminescence measurements; Foxon compared the merits of MBE, MOCVD, and eBE growth; Molder described RHEED studies of Si/Ge growth by GSMBE, and Pashley discussed the role of surface reconstructions in MBE growth as seen from STM studies on GaAs. On the theoretical side, Vvedensky described several different methods to model growth: molecular dynamics, Monte Carlo techniques, and analytic modeling.

Surface Dynamics of GaAs(001) During MBE Growth and Equilibrium

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Publisher :
ISBN 13 :
Total Pages : 236 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Surface Dynamics of GaAs(001) During MBE Growth and Equilibrium by : Mark Donald Johnson

Download or read book Surface Dynamics of GaAs(001) During MBE Growth and Equilibrium written by Mark Donald Johnson and published by . This book was released on 1994 with total page 236 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan

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Publisher : CRC Press
ISBN 13 : 9780750302500
Total Pages : 1002 pages
Book Rating : 4.3/5 (25 download)

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Book Synopsis Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan by : Ikegami

Download or read book Gallium Arsenide and Related Compounds 1992, Proceedings of the 19th INT Symposium, 28 September-2 October 1992, Karuizawa, Japan written by Ikegami and published by CRC Press. This book was released on 1993-01-01 with total page 1002 pages. Available in PDF, EPUB and Kindle. Book excerpt: Bringing together international experts from 16 countries, Gallium Arsenide and Related Compounds 1992 focuses on device applications for Gallium Arsenide and related compounds. A topic of importance discussed is the first GaAs supercomputer from Fujitsu. The book also explores carbon doping and device applications in laser diodes, light modulators, and amplifiers, emphasizing business opportunity in consumer applications such as personal communications and TV tuners. It includes an account of the use of scanning tunneling microscopies in GaAs and related compounds. This book is ideal for physicists, materials scientists, and electronics and electrical engineers involved in III-V compound research.

Advances in Computer Simulation Studies on Crystal Growth

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Publisher : MDPI
ISBN 13 : 3038973564
Total Pages : 207 pages
Book Rating : 4.0/5 (389 download)

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Book Synopsis Advances in Computer Simulation Studies on Crystal Growth by : Hiroki Nada

Download or read book Advances in Computer Simulation Studies on Crystal Growth written by Hiroki Nada and published by MDPI. This book was released on 2018-11-16 with total page 207 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Advances in Computer Simulation Studies on Crystal Growth" that was published in Crystals

Chemical Abstracts

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ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scanning Probe Microscopy and Spectroscopy

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Publisher : John Wiley & Sons
ISBN 13 : 047124824X
Total Pages : 520 pages
Book Rating : 4.4/5 (712 download)

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Book Synopsis Scanning Probe Microscopy and Spectroscopy by : Dawn Bonnell

Download or read book Scanning Probe Microscopy and Spectroscopy written by Dawn Bonnell and published by John Wiley & Sons. This book was released on 2000-12-05 with total page 520 pages. Available in PDF, EPUB and Kindle. Book excerpt: A practical introduction to basic theory and contemporary applications across a wide range of research disciplines Over the past two decades, scanning probe microscopies and spectroscopies have gained acceptance as indispensable characterization tools for an array of disciplines. This book provides novices and experienced researchers with a highly accessible treatment of basic theory, alongside detailed examples of current applications of both scanning tunneling and force microscopies and spectroscopies. Like its popular predecessor, Scanning Probe Microscopy and Spectroscopy, Second Edition features contributions from distinguished scientists working in a wide range of specialties at university, commercial, and government research labs around the world. Chapters have been edited for clarity, conciseness, and uniformity of presentation to provide professionals with a concise working reference to scanning probe microscopic and spectroscopic principles, techniques, and practices. This Second Edition has been substantially revised and expanded to reflect important advances and new applications. In addition to numerous examples, the Second Edition features expanded coverage of electrostatic and magnetic force microscopies, near-field optical microscopies, and new applications of buried interfaces in nanomechanics, electrochemistry, and biology. Scanning Probe Microscopy and Spectroscopy, Second Edition is an indispensable working resource for surface scientists, microscopists, and spectroscopists in materials science, chemistry, engineering, biochemistry, physics, and the life sciences. It is also an unparalleled reference text for advanced undergraduates and graduate students in those fields.

Handbook of Crystal Growth

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Publisher : Elsevier
ISBN 13 : 0444593764
Total Pages : 1216 pages
Book Rating : 4.4/5 (445 download)

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Book Synopsis Handbook of Crystal Growth by : Tatau Nishinaga

Download or read book Handbook of Crystal Growth written by Tatau Nishinaga and published by Elsevier. This book was released on 2014-11-04 with total page 1216 pages. Available in PDF, EPUB and Kindle. Book excerpt: Volume IAHandbook of Crystal Growth, 2nd Edition (Fundamentals: Thermodynamics and Kinetics) Volume IA addresses the present status of crystal growth science, and provides scientific tools for the following volumes: Volume II (Bulk Crystal Growth) and III (Thin Film Growth and Epitaxy). Volume IA highlights thermodynamics and kinetics. After historical introduction of the crystal growth, phase equilibria, defect thermodynamics, stoichiometry, and shape of crystal and structure of melt are described. Then, the most fundamental and basic aspects of crystal growth are presented, along with the theories of nucleation and growth kinetics. In addition, the simulations of crystal growth by Monte Carlo, ab initio-based approach and colloidal assembly are thoroughly investigated. Volume IBHandbook of Crystal Growth, 2nd Edition (Fundamentals: Transport and Stability) Volume IB discusses pattern formation, a typical problem in crystal growth. In addition, an introduction to morphological stability is given and the phase-field model is explained with comparison to experiments. The field of nanocrystal growth is rapidly expanding and here the growth from vapor is presented as an example. For the advancement of life science, the crystal growth of protein and other biological molecules is indispensable and biological crystallization in nature gives many hints for their crystal growth. Another subject discussed is pharmaceutical crystal growth. To understand the crystal growth, in situ observation is extremely powerful. The observation techniques are demonstrated. Volume IA - Explores phase equilibria, defect thermodynamics of Si, stoichiometry of oxides and atomistic structure of melt and alloys - Explains basic ideas to understand crystal growth, equilibrium shape of crystal, rough-smooth transition of step and surface, nucleation and growth mechanisms - Focuses on simulation of crystal growth by classical Monte Carlo, ab-initio based quantum mechanical approach, kinetic Monte Carlo and phase field model. Controlled colloidal assembly is presented as an experimental model for crystal growth. Volume IIB - Describes morphological stability theory and phase-field model and comparison to experiments of dendritic growth - Presents nanocrystal growth in vapor as well as protein crystal growth and biological crystallization - Interprets mass production of pharmaceutical crystals to be understood as ordinary crystal growth and explains crystallization of chiral molecules - Demonstrates in situ observation of crystal growth in vapor, solution and melt on the ground and in space

Advances in Scanning Probe Microscopy

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Publisher : Springer Science & Business Media
ISBN 13 : 3642569498
Total Pages : 352 pages
Book Rating : 4.6/5 (425 download)

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Book Synopsis Advances in Scanning Probe Microscopy by : T. Sakurai

Download or read book Advances in Scanning Probe Microscopy written by T. Sakurai and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 352 pages. Available in PDF, EPUB and Kindle. Book excerpt: There have been many books published on scanning tunneling microscopy (STM), atomic force microscopy (AFM) and related subjects since Dr. Cerd Binnig and Dr. Heinrich Rohrer invented STM in 1982 and AFM in 1986 at IBM Research Center in Zurich, Switzerland. These two techniques, STM and AFM, now form the core of what has come to be called the 'scanning probe microscopy (SPM)' family. SPM is not just the most powerful microscope for scientists to image atoms on surfaces, but is also becoming an indispensable tool for manipulating atoms and molecules to construct man-made materials and devices. Its impact has been felt in various fields, from surface physics and chemistry to nano-mechanics, nano-electronics and medical science. Its influence will surely extend further as the years go by, beyond the reach of our present imagination, and new research applications will continue to emerge. This book, therefore, is not intended to be a comprehensive review or textbook on SPM. Its aim is to cover only a selected part of the active re search fields of SPM and related topics in which I have been directly involved over the years. These include the basic principles of STM and AFM, and their applications to fullerene film growth, SiC surface reconstructions, MBE (molecular beam epitaxy) growth of CaAs, atomic scale manipulation of Si surfaces and meso scopic work function.

Comprehensive Semiconductor Science and Technology

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Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)

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Book Synopsis Comprehensive Semiconductor Science and Technology by :

Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts

Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1360 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Science Abstracts by :

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science Reports of the Research Institutes

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Publisher :
ISBN 13 :
Total Pages : 750 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Science Reports of the Research Institutes by : Tōhoku Daigaku

Download or read book Science Reports of the Research Institutes written by Tōhoku Daigaku and published by . This book was released on 1997 with total page 750 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Molecular Beam Epitaxy

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Publisher : John Wiley & Sons
ISBN 13 : 1119355001
Total Pages : 514 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Molecular Beam Epitaxy by : Hajime Asahi

Download or read book Molecular Beam Epitaxy written by Hajime Asahi and published by John Wiley & Sons. This book was released on 2019-01-30 with total page 514 pages. Available in PDF, EPUB and Kindle. Book excerpt: Covers both the fundamentals and the state-of-the-art technology used for MBE Written by expert researchers working on the frontlines of the field, this book covers fundamentals of Molecular Beam Epitaxy (MBE) technology and science, as well as state-of-the-art MBE technology for electronic and optoelectronic device applications. MBE applications to magnetic semiconductor materials are also included for future magnetic and spintronic device applications. Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics is presented in five parts: Fundamentals of MBE; MBE technology for electronic devices application; MBE for optoelectronic devices; Magnetic semiconductors and spintronics devices; and Challenge of MBE to new materials and new researches. The book offers chapters covering the history of MBE; principles of MBE and fundamental mechanism of MBE growth; migration enhanced epitaxy and its application; quantum dot formation and selective area growth by MBE; MBE of III-nitride semiconductors for electronic devices; MBE for Tunnel-FETs; applications of III-V semiconductor quantum dots in optoelectronic devices; MBE of III-V and III-nitride heterostructures for optoelectronic devices with emission wavelengths from THz to ultraviolet; MBE of III-V semiconductors for mid-infrared photodetectors and solar cells; dilute magnetic semiconductor materials and ferromagnet/semiconductor heterostructures and their application to spintronic devices; applications of bismuth-containing III–V semiconductors in devices; MBE growth and device applications of Ga2O3; Heterovalent semiconductor structures and their device applications; and more. Includes chapters on the fundamentals of MBE Covers new challenging researches in MBE and new technologies Edited by two pioneers in the field of MBE with contributions from well-known MBE authors including three Al Cho MBE Award winners Part of the Materials for Electronic and Optoelectronic Applications series Molecular Beam Epitaxy: Materials and Applications for Electronics and Optoelectronics will appeal to graduate students, researchers in academia and industry, and others interested in the area of epitaxial growth.

Leading Edge of Micro-Nano Science and Technology

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Publisher : Trans Tech Publications Ltd
ISBN 13 : 303826010X
Total Pages : 400 pages
Book Rating : 4.0/5 (382 download)

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Book Synopsis Leading Edge of Micro-Nano Science and Technology by : Hai Lin Cong

Download or read book Leading Edge of Micro-Nano Science and Technology written by Hai Lin Cong and published by Trans Tech Publications Ltd. This book was released on 2013-03-11 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Selected, peer reviewed papers from the 11th China International Nanoscience and Technology Symposium (CINST 2012), October 21–25, 2012, Kunming, China