Read Books Online and Download eBooks, EPub, PDF, Mobi, Kindle, Text Full Free.
Room Temperature Photocurrent Spectroscopy Of Gaas Gaalas Multiple Quantum Wells
Download Room Temperature Photocurrent Spectroscopy Of Gaas Gaalas Multiple Quantum Wells full books in PDF, epub, and Kindle. Read online Room Temperature Photocurrent Spectroscopy Of Gaas Gaalas Multiple Quantum Wells ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!
Book Synopsis Room-Temperature Photocurrent Spectroscopy of GaAs/GaAlAs Multiple Quantum Wells by :
Download or read book Room-Temperature Photocurrent Spectroscopy of GaAs/GaAlAs Multiple Quantum Wells written by and published by . This book was released on 1994 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: By means of room temperature photocurrent spectroscopy, we have studied the effect of electric fields on exciton absorption in GaAs/GaAlAs multiple quantum wells (MQW) and discuss in this paper the effect of an electric field on the photocurrent spectra for some kinds of MWQ structures. The material requirement for related optoelectric devices MQW is also discussed. (jg).
Book Synopsis Scientific and Technical Aerospace Reports by :
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1995 with total page 704 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Energy Research Abstracts written by and published by . This book was released on 1988 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electronic Structure of Semiconductor Heterojunctions by : Giorgio Margaritondo
Download or read book Electronic Structure of Semiconductor Heterojunctions written by Giorgio Margaritondo and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: E se non che di cid son vere prove A nd were it not for the true evidence Per piti e piti autori, che sa, ra. nno Of many authors who will be Per i miei versi nominati altrove, Mentioned elsewhere in my rhyme Non presterei alla penna 10. mana I would not lend my hand to the pen Per nota1' cid ch'io vidi, can temenza And describe my observations, for fear ehe non fosse do. altri casso e van 0; That they would be rejected and in vane; Mala lor chiara. e vera. esperienza But these authors' clear and true experience Mi assicura. nel dir, come persone Encourages me to report, since they Degne di fede ad ogni gra. n sentenza. Should always be trusted for their word. [From" Dittamondo", by Fazio degli UbertiJ Heterojunction interfaces, the interfaces between different semiconducting materi als, have been extensively explored for over a quarter of a century. The justifica tion for this effort is clear - these interfaces could become the building blocks of lllany novel solid-state devices. Other interfaces involving semiconductors are al ready widely used in technology, These are, for example, metal-semiconductor and insulator-semiconductor junctions and hOll1ojunctions. In comparison, the present applications of heterojunction int. erfaces are limited, but they could potentially becOlne lnuch lllore ext. ensive in the neal' future. The path towards the widespread use of heterojunctions is obstructed by several obstacles
Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 864 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaAs and Related Materials by : Sadao Adachi
Download or read book GaAs and Related Materials written by Sadao Adachi and published by World Scientific. This book was released on 1994 with total page 700 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers the various material properties of bulk GaAs and related materials, and aspects of the physics of artificial semiconductor microstructures, such as quantum wells and superlattices, made of these materials. A complete set of the material properties are considered in this book. They are structural properties; thermal properties; elastic and lattice vibronic properties; collective effects and some response characteristics; electronic energy-band structure and consequences; optical, elasto-optic, and electro-optic properties; and carrier transport properties. This book attempts to summarize, in graphical and tabular forms, most of the important theoretical and experimental results on these material properties. It contains a large number of references useful for further study. Timely topics are discussed as well. This book will be of interest to graduate students, scientists and engineers working on semiconductors.
Book Synopsis Spectroscopy of GaAs Quantum Wells by : Lawrence Camest West
Download or read book Spectroscopy of GaAs Quantum Wells written by Lawrence Camest West and published by . This book was released on 1985 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Xi you jin shu; Rare metals written by and published by . This book was released on 1992 with total page 684 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis OM85, Basic Properties of Optical Materials by : Albert Feldman
Download or read book OM85, Basic Properties of Optical Materials written by Albert Feldman and published by . This book was released on 1985 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Spectroscopy of Single Free Standing Quantum Wells by : M. D. Williams
Download or read book Spectroscopy of Single Free Standing Quantum Wells written by M. D. Williams and published by . This book was released on 2006 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt: We investigated the interaction of quantum confined exciton states GaAs quantum wells with native surface states. Single molecule photoluminescence (PL) spectroscopy, developed by T. Huser at LLNL was used to probe the unique bare quantum wells in the free standing quantum well structure. The latter was developed by the M.D. Williams at Clark Atlanta University. The goals of the project during this budget cycle were to procure samples containing GaAs free standing QWs, identify suitable regions for PL analysis at Lawrence Livermore, analyze the structures at room temperature and at liquid nitrogen temperatures. The specific regions of interest on the sample structures were identified by scanning electron microscopy at Clark Atlanta prior to transport to LLNL. Previous attempts at other facilities using NSOM, cathodoluminescence, and conventional PL showed little luminescence activity at room temperature from the 200 {angstrom} thick wells. This suggested either excess recombination due to surface states in the quantum well region or insufficient absorption length for photoluminescence. The literature suggested that the effect of the defects could be eliminated by reducing the sample temperature below their associated activation energies. In our previous subcontract work with LLNL, a significant amount of effort was expended to modify the apparatus to allow low temperature measurements. The modifications were not successful and we concluded that in order to do the measurements at low temperature we would need to purchase a commercial optical cryostat to get reliable results. Ms. Rochelle Bryant worked during the summer as an intern at LLNL on the project under the supervision of C. Hollars and in collaboration with T. Huser and found that PL emission could be obtained at room temperature. This was a surprising result as the literature and our experience shows that there is no PL emission from GaAs at room temperature. We speculate that this is due to the small interaction region excited by the laser source. We proceeded with the project using this new found room temperature capability and have analyzed the effect of various chemical species on the PL emission from the GaAs QWs. We were able to observe some significant intensity modifications of the PL spectra with chemical adsorbants. This progress holds promise for the development of this structure as a chemical or biological sensor.
Book Synopsis Microprobe Characterization of Optoelectronic Materials by : Juan Jimenez
Download or read book Microprobe Characterization of Optoelectronic Materials written by Juan Jimenez and published by CRC Press. This book was released on 2002-11-15 with total page 734 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each chapter in this book is written by a group of leading experts in one particular type of microprobe technique. They emphasize the ability of that technique to provide information about small structures (i.e. quantum dots, quantum lines), microscopic defects, strain, layer composition, and its usefulness as diagnostic technique for device degradation. Different types of probes are considered (electrons, photons and tips) and different microscopies (optical, electron microscopy and tunneling). It is an ideal reference for post-graduate and experienced researchers, as well as for crystal growers and optoelectronic device makers.
Book Synopsis Quantum Well and Superlattice Physics by :
Download or read book Quantum Well and Superlattice Physics written by and published by . This book was released on 1994 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Optical Computing Hardware by : Jürgen Jahns
Download or read book Optical Computing Hardware written by Jürgen Jahns and published by Academic Press. This book was released on 2014-05-10 with total page 345 pages. Available in PDF, EPUB and Kindle. Book excerpt: Optical Computing Hardware provides information pertinent to the advances in the development of optical computing hardware. This book discusses the two application areas, namely, high-performance computing and high-throughput photonic switching. Organized into 11 chapters, this book begins with an overview of the requirements on hardware from s system perspective. This text then presents the self-electro-optic-effect devices (SPEED), the vertical-cavity-surface- emitting microlasers (VCSEL), and the vertical-to-surface transmission electrophotonic device (VSTEP). Other chapters consider the fundamental principles of the devices and their operation either as logic devices or for optical interconnection applications. This book discusses as well the planar optical microlens as an example of a refractive microlens of the gradient-index type and explains the diffractive optical elements. The final chapter describes a method for writing and reading optically in parallel from a three-dimensional matrix by means of two-photon interaction in photochromic organic materials. This book is a valuable resource for engineers, scientists, and researchers.
Download or read book Proceedings written by and published by Information Gatekeepers Inc. This book was released on 1991 with total page 554 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Quantum Well and Superlattice Physics by : Gottfried H. Döhler
Download or read book Quantum Well and Superlattice Physics written by Gottfried H. Döhler and published by . This book was released on 1987 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Best of Soviet Semiconductor Physics and Technology, 1989-1990 by : Mikhail Efimovich Levinshte?n
Download or read book Best of Soviet Semiconductor Physics and Technology, 1989-1990 written by Mikhail Efimovich Levinshte?n and published by World Scientific. This book was released on 1995 with total page 668 pages. Available in PDF, EPUB and Kindle. Book excerpt: Each year a large number of first rate articles on the physics and technology of semiconductor devices, written by Soviet experts in the field, are published. However, due to the lack of exchange and personal contact, most of these, unfortunately, are neglected by many scientists from the United States, Japan as well as Western Europe. Consequently, many important developments in semiconductor physics are missed by the Western world.This book is a serious attempt to bridge the gap between the Soviet and Western scientific communities. Most of all, it is an effort towards facilitating the communication and sharing of knowledge amongst people from different parts of the world. Ultimately, the aim is to contribute towards the building of a better world for all ? one where the knowledge of advanced technology and scientific discoveries is used to improve the quality of life and not the pursuit of selfish mutually destructive behavior. For those in the field who wish to partake in this exchange of knowledge and as a gesture of support for their Soviet counterparts, the reading of this book provides the first step.
Book Synopsis Electroabsorption Mechanisms in Germanium Quantum Well Material by : Rebecca Kayla Schaevitz
Download or read book Electroabsorption Mechanisms in Germanium Quantum Well Material written by Rebecca Kayla Schaevitz and published by Stanford University. This book was released on 2011 with total page 241 pages. Available in PDF, EPUB and Kindle. Book excerpt: One possible solution to make viable optoelectronic modulators that meet strict targets down to the scale of on-chip communication is to use germanium-rich materials. Ge/SiGe quantum wells grown on silicon substrates provide the strongest mechanism, the quantum-confined Stark effect (QCSE), and thereby can meet the strictest requirements for optical interconnects, including CMOS-compatibility. Using such a strong effect, Ge-based modulators can be ultra-compact, ultralow-power, large bandwidth and high-speed, making them a strong contender for the future of optoelectronic device integration to solve the bottleneck problem. In this thesis, we will discuss the physical properties of the Ge and SiGe material system then present designs of optoelectronic modulators at the important 1310 nm and 1550 nm communication wavelengths using a program we developed called the Simple Quantum Well Electroabsorption Calculator (SQWEAC). SQWEAC takes the important physical mechanisms present, such as QCSE and indirect absorption, to predict the electroabsorption profile of Ge-based quantum wells. QCSE was experimentally determined on a wide range of samples to show the predictive powers of SQWEAC. Additionally, indirect absorption was also experimentally determined to optimize the physical model for these Ge quantum well devices. In being able to design both 1310 nm and 1550 nm devices using this Ge material system, we provide a platform for designing optoelectronic devices that are Si CMOS compatible and operate over a wide range of wavelengths. These modulators have the capability of providing the large density of information at very low energies per bit required for future interconnect technologies.
