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Author :
Publisher : Marcon Denis
ISBN 13 : 9460183751
Total Pages : 229 pages
Book Rating : 4.4/5 (61 download)
Download or read book ReliabilityStudy Of Power Gallium Nitride Transistors written by and published by Marcon Denis. This book was released on with total page 229 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)
Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.
Author : Gaudenzio Meneghesso
Publisher : Springer
ISBN 13 : 331977994X
Total Pages : 242 pages
Book Rating : 4.3/5 (197 download)
Download or read book Gallium Nitride-enabled High Frequency and High Efficiency Power Conversion written by Gaudenzio Meneghesso and published by Springer. This book was released on 2018-05-12 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book demonstrates to readers why Gallium Nitride (GaN) transistors have a superior performance as compared to the already mature Silicon technology. The new GaN-based transistors here described enable both high frequency and high efficiency power conversion, leading to smaller and more efficient power systems. Coverage includes i) GaN substrates and device physics; ii) innovative GaN -transistors structure (lateral and vertical); iii) reliability and robustness of GaN-power transistors; iv) impact of parasitic on GaN based power conversion, v) new power converter architectures and vi) GaN in switched mode power conversion. Provides single-source reference to Gallium Nitride (GaN)-based technologies, from the material level to circuit level, both for power conversions architectures and switched mode power amplifiers; Demonstrates how GaN is a superior technology for switching devices, enabling both high frequency, high efficiency and lower cost power conversion; Enables design of smaller, cheaper and more efficient power supplies.
Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1119594421
Total Pages : 518 pages
Book Rating : 4.1/5 (195 download)
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2019-08-12 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: An up-to-date, practical guide on upgrading from silicon to GaN, and how to use GaN transistors in power conversion systems design This updated, third edition of a popular book on GaN transistors for efficient power conversion has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout, and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. GaN Transistors for Efficient Power Conversion, 3rd Edition brings key updates to the chapters of Driving GaN Transistors; Modeling, Simulation, and Measurement of GaN Transistors; DC-DC Power Conversion; Envelope Tracking; and Highly Resonant Wireless Energy Transfer. It also offers new chapters on Thermal Management, Multilevel Converters, and Lidar, and revises many others throughout. Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications Updated with 35% new material, including three new chapters on Thermal Management, Multilevel Converters, Wireless Power, and Lidar Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors A valuable resource for professional engineers, systems designers, and electrical engineering students who need to fully understand the state-of-the-art GaN Transistors for Efficient Power Conversion, 3rd Edition is an essential learning tool and reference guide that enables power conversion engineers to design energy-efficient, smaller, and more cost-effective products using GaN transistors.
Author : Hongyu Yu
Publisher : CRC Press
ISBN 13 : 1351767607
Total Pages : 301 pages
Book Rating : 4.3/5 (517 download)
Download or read book Gallium Nitride Power Devices written by Hongyu Yu and published by CRC Press. This book was released on 2017-07-06 with total page 301 pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN is considered the most promising material candidate in next-generation power device applications, owing to its unique material properties, for example, bandgap, high breakdown field, and high electron mobility. Therefore, GaN power device technologies are listed as the top priority to be developed in many countries, including the United States, the European Union, Japan, and China. This book presents a comprehensive overview of GaN power device technologies, for example, material growth, property analysis, device structure design, fabrication process, reliability, failure analysis, and packaging. It provides useful information to both students and researchers in academic and related industries working on GaN power devices. GaN wafer growth technology is from Enkris Semiconductor, currently one of the leading players in commercial GaN wafers. Chapters 3 and 7, on the GaN transistor fabrication process and GaN vertical power devices, are edited by Dr. Zhihong Liu, who has been working on GaN devices for more than ten years. Chapters 2 and 5, on the characteristics of polarization effects and the original demonstration of AlGaN/GaN heterojunction field-effect transistors, are written by researchers from Southwest Jiaotong University. Chapters 6, 8, and 9, on surface passivation, reliability, and package technologies, are edited by a group of researchers from the Southern University of Science and Technology of China.
Author : Alex Lidow
Publisher : John Wiley & Sons
ISBN 13 : 1118844769
Total Pages : 266 pages
Book Rating : 4.1/5 (188 download)
Download or read book GaN Transistors for Efficient Power Conversion written by Alex Lidow and published by John Wiley & Sons. This book was released on 2014-09-15 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium nitride (GaN) is an emerging technology that promises to displace silicon MOSFETs in the next generation of power transistors. As silicon approaches its performance limits, GaN devices offer superior conductivity and switching characteristics, allowing designers to greatly reduce system power losses, size, weight, and cost. This timely second edition has been substantially expanded to keep students and practicing power conversion engineers ahead of the learning curve in GaN technology advancements. Acknowledging that GaN transistors are not one-to-one replacements for the current MOSFET technology, this book serves as a practical guide for understanding basic GaN transistor construction, characteristics, and applications. Included are discussions on the fundamental physics of these power semiconductors, layout and other circuit design considerations, as well as specific application examples demonstrating design techniques when employing GaN devices. With higher-frequency switching capabilities, GaN devices offer the chance to increase efficiency in existing applications such as DC–DC conversion, while opening possibilities for new applications including wireless power transfer and envelope tracking. This book is an essential learning tool and reference guide to enable power conversion engineers to design energy-efficient, smaller and more cost-effective products using GaN transistors. Key features: Written by leaders in the power semiconductor field and industry pioneers in GaN power transistor technology and applications. Contains useful discussions on device–circuit interactions, which are highly valuable since the new and high performance GaN power transistors require thoughtfully designed drive/control circuits in order to fully achieve their performance potential. Features practical guidance on formulating specific circuit designs when constructing power conversion systems using GaN transistors – see companion website for further details. A valuable learning resource for professional engineers and systems designers needing to fully understand new devices as well as electrical engineering students.
Author : Francesco Iannuzzo
Publisher : Energy Engineering
ISBN 13 : 9781785619175
Total Pages : 504 pages
Book Rating : 4.6/5 (191 download)
Download or read book Modern Power Electronic Devices written by Francesco Iannuzzo and published by Energy Engineering. This book was released on 2020-10 with total page 504 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power devices are key to modern power systems, performing functions such as inverting and changing voltages, buffering and switching. Following a device-centric approach, this book covers power electronic applications, semiconductor physics, materials science, application engineering, and key technologies such as MOSFET, IGBT and WBG.
Author : Alex Lidow
Publisher :
ISBN 13 : 9780996649223
Total Pages : pages
Book Rating : 4.6/5 (492 download)
Download or read book GaN Power Devices and Applications written by Alex Lidow and published by . This book was released on 2021-10 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: GaN Power Devices and Applications, provides an update on gallium nitride (GaN) technology and applications by leading experts. It includes detailed descriptions of the latest examples of GaN's usage in power supplies, lidar systems, motor drives, and space applications.
Author : Michael E. Levinshtein
Publisher : John Wiley & Sons
ISBN 13 : 9780471358275
Total Pages : 220 pages
Book Rating : 4.3/5 (582 download)
Download or read book Properties of Advanced Semiconductor Materials written by Michael E. Levinshtein and published by John Wiley & Sons. This book was released on 2001-02-21 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Containing the most reliable parameter values for each of these semiconductor materials, along with applicable references, these data are organized in a structured, logical way for each semiconductor material. * Reviews traditional semiconductor materials as well as new, advanced semiconductors. * Essential authoritative handbook on the properties of semiconductor materials.
Author : M. Dudley
Publisher : The Electrochemical Society
ISBN 13 : 1607688247
Total Pages : 297 pages
Book Rating : 4.6/5 (76 download)
Download or read book Gallium Nitride and Silicon Carbide Power Technologies 7 written by M. Dudley and published by The Electrochemical Society. This book was released on with total page 297 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : K. Shenai
Publisher : The Electrochemical Society
ISBN 13 : 1607682621
Total Pages : 361 pages
Book Rating : 4.6/5 (76 download)
Download or read book Gallium Nitride and Silicon Carbide Power Technologies written by K. Shenai and published by The Electrochemical Society. This book was released on 2011 with total page 361 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Karl Unterrainer
Publisher : Böhlau Verlag Wien
ISBN 13 : 3205201280
Total Pages : 138 pages
Book Rating : 4.2/5 (52 download)
Download or read book Die Fakultät für Elektrotechnik und Informationstechnik / The Faculty of Electrical Engineering and Information Technology written by Karl Unterrainer and published by Böhlau Verlag Wien. This book was released on 2016-01-20 with total page 138 pages. Available in PDF, EPUB and Kindle. Book excerpt: An autonomous faculty of the TU Wien for only forty years, Electrical Engineering and Information Technology are nevertheless among the most important foundations of technical development since the 19th century. Areas of research are numerous and broad – starting with the “classics” like Energy Technologies and Telecommunications, research turned to the fields of System and Automation Technologies, Micro- and Nanoelectronics, and Photonics, all highly complex disciplines that have established themselves as essential to modern society.
Author :
Publisher :
ISBN 13 :
Total Pages : 412 pages
Book Rating : 4.3/5 (91 download)
Download or read book Microcircuit Reliability Bibliography written by and published by . This book was released on 1978 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sergey Yurish
Publisher : Lulu.com
ISBN 13 : 8409081601
Total Pages : 516 pages
Book Rating : 4.4/5 (9 download)
Download or read book Advances in Microelectronics: Reviews, Vol. 2 written by Sergey Yurish and published by Lulu.com. This book was released on 2019-02-07 with total page 516 pages. Available in PDF, EPUB and Kindle. Book excerpt: The 2nd volume of 'Advances in Microelectronics: Reviews' Book Series is written by 57 contributors from academy and industry from 11 countries (Bulgaria, Hungary, Iran, Japan, Malaysia, Romania, Russia, Slovak Republic, Spain, Ukraine and USA). The book contains 13 chapters from different areas of microelectronics: MEMS, materials characterization, and various microelectronic devices. With unique combination of information in each volume, the Book Series will be of value for scientists and engineers in industry and at universities. Each of chapter is ending by well selected list of references with books, journals, conference proceedings and web sites. This book ensures that readers will stay at the cutting edge of the field and get the right and effective start point and road map for the further researches and developments.
Author : Allan H Johnston
Publisher : World Scientific
ISBN 13 : 9814467650
Total Pages : 376 pages
Book Rating : 4.8/5 (144 download)
Download or read book Reliability And Radiation Effects In Compound Semiconductors written by Allan H Johnston and published by World Scientific. This book was released on 2010-04-27 with total page 376 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focuses on reliability and radiation effects in compound semiconductors, which have evolved rapidly during the last 15 years. It starts with first principles, and shows how advances in device design and manufacturing have suppressed many of the older reliability mechanisms.It is the first book that comprehensively covers reliability and radiation effects in optoelectronic as well as microelectronic devices. It contrasts reliability mechanisms of compound semiconductors with those of silicon-based devices, and shows that the reliability of many compound semiconductors has improved to the level where they can be used for ten years or more with low failure rates.
Author : Yong Liu
Publisher : Springer Science & Business Media
ISBN 13 : 1461410533
Total Pages : 606 pages
Book Rating : 4.4/5 (614 download)
Download or read book Power Electronic Packaging written by Yong Liu and published by Springer Science & Business Media. This book was released on 2012-02-15 with total page 606 pages. Available in PDF, EPUB and Kindle. Book excerpt: Power Electronic Packaging presents an in-depth overview of power electronic packaging design, assembly,reliability and modeling. Since there is a drastic difference between IC fabrication and power electronic packaging, the book systematically introduces typical power electronic packaging design, assembly, reliability and failure analysis and material selection so readers can clearly understand each task's unique characteristics. Power electronic packaging is one of the fastest growing segments in the power electronic industry, due to the rapid growth of power integrated circuit (IC) fabrication, especially for applications like portable, consumer, home, computing and automotive electronics. This book also covers how advances in both semiconductor content and power advanced package design have helped cause advances in power device capability in recent years. The author extrapolates the most recent trends in the book's areas of focus to highlight where further improvement in materials and techniques can drive continued advancements, particularly in thermal management, usability, efficiency, reliability and overall cost of power semiconductor solutions.
Author : Farid Medjdoub
Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)
Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices
