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Rare Earth Doped Semiconductors Ii Volume 422
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Book Synopsis Rare-Earth Doped Semiconductors II: Volume 422 by : S. Coffa
Download or read book Rare-Earth Doped Semiconductors II: Volume 422 written by S. Coffa and published by . This book was released on 1996 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rare-earth doped semiconductors hold great potential for a variety of optoelectronic applications, including lasers, LEDs and optical amplifiers. In fact, the field has grown rapidly over the past several years, with a clear switch in direction. The first book by this name was devoted to rare-earth doped II-VI and III-V semiconductors; more than half of the papers in this new volume are devoted to rare-earth doped silicon. This indicates that rare-earth doping of silicon is now seriously considered as a means to achieve silicon-based optoelectronic devices. In addition, new reports on rare-earth doped III-nitrides are also presented. Researchers from 14 countries come together in the volume to discuss current trends, highlight new developments and identify potential electronic and optoelectronic applications. Topics include: incorporation methods and properties; structural, electrical and optical properties; excitation mechanisms and electroluminescence and integration.
Book Synopsis State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II by : Electrochemical Society. Electronics Division
Download or read book State-of-the-Art Program on Compound Semiconductors XXXVI and Wide Bandgap Semiconductors for Photonic and Electronic Devices and Sensors II written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2002 with total page 380 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Proceedings of the Second Symposium on III-V Nitride Materials and Processes by : C. R. Abernathy
Download or read book Proceedings of the Second Symposium on III-V Nitride Materials and Processes written by C. R. Abernathy and published by The Electrochemical Society. This book was released on 1998 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN and Related Materials II by : Stephen J. Pearton
Download or read book GaN and Related Materials II written by Stephen J. Pearton and published by CRC Press. This book was released on 2000-10-31 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first GaN and Related Materials covered topics such as a historical survey of past research, optical electrical and microstructural characterization, theory of defects, bulk crystal growth, and performance of electronic and photonic devices. This new volume updates old research where warranted and explores new areas such as UV detectors, microw
Book Synopsis Compound Semiconductors 1998 by : H Sakaki
Download or read book Compound Semiconductors 1998 written by H Sakaki and published by CRC Press. This book was released on 2021-01-31 with total page 919 pages. Available in PDF, EPUB and Kindle. Book excerpt: Compound Semiconductors 1998 explores research and development in key semiconductor materials and III-V compounds such as gallium arsenide, indium phosphide, gallium nitride, silicon germanium, and silicon carbide. It critically assesses progress in key technologies such as reliability assessment and reports on advances in the use of semiconductors in modern electronic and optoelectronic devices. Coverage in this volume reflects the increased interest and research funding in nitride-based materials; wide band-gap devices; mobile communications, including III-V-based transistors and photonic devices; crystal growth and characterization; and nanoscale phenomena, such as quantum wires, dots, and other low dimensional structures.
Book Synopsis Processing of 'Wide Band Gap Semiconductors by : S. J. Pearton
Download or read book Processing of 'Wide Band Gap Semiconductors written by S. J. Pearton and published by Cambridge University Press. This book was released on 2013-01-15 with total page 593 pages. Available in PDF, EPUB and Kindle. Book excerpt: Wide bandgap semiconductors, made from such materials as GaN, SiC, diamond, and ZnSe, are undergoing a strong resurgence in recent years, principally because of their direct bandgaps, which give them a huge advantage over the indirect gap Sic As an example, more than 10 million blue LEDs using this technology are sold each month, and new, high brightness (15 lumens per watt), long-life white LEDs are under development with the potential to replace incandescent bulbs in many situations. This book provides readers with a broad overview of this rapidly expanding technology, bringing them up to speed on new discoveries and commercial applications. It provides specific technical applications of key processes such as laser diodes, LEDs, and very high temperature electronic controls on engines, focusing on doping, etching, oxidation passivation, growth techniques and more.
Book Synopsis Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors by : H. Q. Hou
Download or read book Proceedings of the Symposium on Light Emitting Devices for Optoelectronic Applications and the Twenty-Eighth State-of-the-Art Program on Compound Semiconductors written by H. Q. Hou and published by The Electrochemical Society. This book was released on 1998 with total page 664 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis International Aerospace Abstracts by :
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis InP and Related Compounds by : M O Manasreh
Download or read book InP and Related Compounds written by M O Manasreh and published by CRC Press. This book was released on 2014-04-21 with total page 856 pages. Available in PDF, EPUB and Kindle. Book excerpt: InP is a key semiconductor for the production of optoelectronic and photonic devices. Its related compounds, such as InGaAsP alloy, have been realized as very important materials for communication in the 1.3 and 1.55 micron spectral regions. Furthermore, the applications on InP and related compounds have extended to other areas that include laser diodes, light emitting diodes, photodetectors, waveguides, photocathodes, solar cells, and many other applications. The topics presented in this book have been chosen to achieve a balance between the properties of bulk materials, doping, characterization, applications, and devices. This unique volume, featuring chapters written by experts in the field, provides a good starting point for those who are new to the subject and contains detailed results and in depth discussions for those who are experts in the field.
Book Synopsis Handbook on the Physics and Chemistry of Rare Earths by : K.A. Gschneidner
Download or read book Handbook on the Physics and Chemistry of Rare Earths written by K.A. Gschneidner and published by Elsevier. This book was released on 2003-06-19 with total page 688 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume of the Handbook illustrates the rich variety of topics covered by rare earth science. Three chapters are devoted to the description of solid state compounds: skutterudites (Chapter 211), rare earth -antimony systems (Chapter 212), and rare earth-manganese perovskites (Chapter 214). Two other reviews deal with solid state properties: one contribution includes information on existing thermodynamic data of lanthanide trihalides (Chapter 213) while the other one describes optical properties of rare earth compounds under pressure (Chapter 217). Finally, two chapters focus on solution chemistry. The state of the art in unraveling solution structure of lanthanide-containing coordination compounds by paramagnetic nuclear magnetic resonance is outlined in Chapter 215. The potential of time-resolved, laser-induced emission spectroscopy for the analysis of lanthanide and actinide solutions is presented and critically discussed in Chapter 216.
Book Synopsis Rare-Earth Doped Semiconductors: Volume 301 by : Gernot S. Pomrenke
Download or read book Rare-Earth Doped Semiconductors: Volume 301 written by Gernot S. Pomrenke and published by . This book was released on 1993-09 with total page 448 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis III-Nitride Semiconductors by : M.O. Manasreh
Download or read book III-Nitride Semiconductors written by M.O. Manasreh and published by Elsevier. This book was released on 2000-12-06 with total page 463 pages. Available in PDF, EPUB and Kindle. Book excerpt: Research advances in III-nitride semiconductor materials and device have led to an exponential increase in activity directed towards electronic and optoelectronic applications. There is also great scientific interest in this class of materials because they appear to form the first semiconductor system in which extended defects do not severely affect the optical properties of devices. The volume consists of chapters written by a number of leading researchers in nitride materials and device technology with the emphasis on the dopants incorporations, impurities identifications, defects engineering, defects characterization, ion implantation, irradiation-induced defects, residual stress, structural defects and phonon confinement. This unique volume provides a comprehensive review and introduction of defects and structural properties of GaN and related compounds for newcomers to the field and stimulus to further advances for experienced researchers. Given the current level of interest and research activity directed towards nitride materials and devices, the publication of the volume is particularly timely. Early pioneering work by Pankove and co-workers in the 1970s yielded a metal-insulator-semiconductor GaN light-emitting diode (LED), but the difficulty of producing p-type GaN precluded much further effort. The current level of activity in nitride semiconductors was inspired largely by the results of Akasaki and co-workers and of Nakamura and co-workers in the late 1980s and early 1990s in the development of p-type doping in GaN and the demonstration of nitride-based LEDs at visible wavelengths. These advances were followed by the successful fabrication and commercialization of nitride blue laser diodes by Nakamura et al at Nichia. The chapters contained in this volume constitutes a mere sampling of the broad range of research on nitride semiconductor materials and defect issues currently being pursued in academic, government, and industrial laboratories worldwide.
Book Synopsis Defects in Electronic Materials II: Volume 442 by : Jürgen Michel
Download or read book Defects in Electronic Materials II: Volume 442 written by Jürgen Michel and published by . This book was released on 1997-05-02 with total page 744 pages. Available in PDF, EPUB and Kindle. Book excerpt: The pervasive role of defects in determining the thermal, mechanical, electrical, optical and magnetic properties of materials is significant as is the knowledge and operation of generation and control of defects in electronic materials. Developing novel semiconductor materials, however, requires new insights into the role of defects to achieve new properties. New experimental techniques must be developed to study defects in small structures. Research groups come together in this book from MRS to provide a vivid picture of the current problems, progress and methods in defect studies in electronic materials. Topics include new techniques in defect studies; processing induced defects, plasma-induced point defects; processing induced defects -defects and gate-oxide integrity; point defects and reaction; point defects and interactions in Si; impurity diffusion and hydrogen in Si; dislocations in group IV semiconductors; point defects and defect interactions in SiGe; point defects in III-V compounds; compensation and structural defects in III-V compounds and layers and structures.
Book Synopsis Low-Dielectric Constant Materials II: Volume 443 by : André Lagendijk
Download or read book Low-Dielectric Constant Materials II: Volume 443 written by André Lagendijk and published by . This book was released on 1997-08-19 with total page 224 pages. Available in PDF, EPUB and Kindle. Book excerpt: Low-dielectric constant materials are needed to improve the performance and speed of future integrated circuits. In fact, the diversity of contributors to this book is testimony to the global significance of the topic to the future of semiconductor manufacturing. Presentations include those by semiconductor equipment manufacturers and chemical source suppliers, academia from six countries, four government laboratories and five major device manufacturers. Approaches to designing and implementing reduction in dielectric constant for intermetal dielectric materials are featured and range from the evolution of silicon dioxide to fluorinated silicate glass, to the use of inorganic/organic polymers and spin-on-material, to fluorinated diamond-like carbon and nanoporous silica. The book also addresses the practical aspects of the use of low-dielectric constant materials such as chemical mechanical polishing of these materials and optimization of wiring delays in devices utilizing low-k material.
Book Synopsis Nanophase and Nanocomposite Materials II: Volume 457 by : Sridhar Komarneni
Download or read book Nanophase and Nanocomposite Materials II: Volume 457 written by Sridhar Komarneni and published by . This book was released on 1997-04-22 with total page 584 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides an international and interdisciplinary forum for the discussion of advances in the research of nanophase and nanocomposites. The term 'nanophase' refers to nanoscale particles of one phase, whereas the term 'nanocomposite'refers to a composite of more than one Gibbsian solid phase where at least one dimension is in the nanometer range. The book, the second in a series, features reports showing that bulk materials with nanostructure (‹ 0.5µm) often have enhanced and unique properties when compared to their coarse-structured (›1µm) equivalents. A wide range of science and engineering disciplines are represented, with topics ranging from synthesis and processing, to properties and applications. Topics include: nanophase oxides; nanophase metals, alloys and non-oxides; nanophases - simulation studies; magnetic and metal nanocomposites; oxide, non-oxide and oxide-metal nanocomposites; organic-inorganic and sol-gel nanocomposites; and nanocomposites of layered and mesoporous materials.
Book Synopsis Flat Panel Display Materials II: Volume 424 by : Miltiadis K. Hatalis
Download or read book Flat Panel Display Materials II: Volume 424 written by Miltiadis K. Hatalis and published by . This book was released on 1997-02-12 with total page 544 pages. Available in PDF, EPUB and Kindle. Book excerpt: The proceedings of a symposium held April 1996, in San Francisco, California. The field is experiencing a rapid growth which currently is expanding from portable computer applications to include display applications for desktop computers and a wide array of consumer and industrial products. Seventy-six contributions are divided into six sections covering amorphous silicon thin-film transistor materials, polycrystalline silicon thin-film transistor materials, liquid crystal display materials, transparent conducting oxides, field emission display materials, and other emissive display materials. Annotation copyrighted by Book News, Inc., Portland, OR
Book Synopsis Infrared Applications of Semiconductors: Volume 450 by : M. Omar Manasreh
Download or read book Infrared Applications of Semiconductors: Volume 450 written by M. Omar Manasreh and published by . This book was released on 1997-03-17 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is unique in that it combines for the first time the infrared detectors and infrared lasers and emitters in one volume. It is merely a step, however, in a very fast-changing field, toward achieving an understanding of novel structures that can be used for high-performance infrared detectors, imaging arrays, infrared lasers and sources. Internationally-known experts discuss recent advances in materials structures, processing and device performances, with presentations crossing materials and discipline boundaries. Recent investigations based on III-V, II-VI and IV bulk semiconductors, quantum wells, and superlattices for long-wavelength infrared detectors, emitters, sources and materials are featured. Topics include: antimonide-related materials and devices; quantum wells and devices; quantum infrared detectors; HgCdTe - materials, devices and processing; nonlinear and parametric oscillator material; interdiffusion in heterostructures and related topics.
