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Rapid Thermal Annealing Of Si Implanted Gaas In Arsenic Overpressure
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Book Synopsis Rapid Thermal Annealing of Si Implanted GaAs in Arsenic Overpressure by :
Download or read book Rapid Thermal Annealing of Si Implanted GaAs in Arsenic Overpressure written by and published by . This book was released on 1904 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: A new method of rapid thermal annealing (RTA) in arsenic overpressure using a high thermal mass reactor and a very low thermal mass substrate holder has been developed. Efficient activation of Si implantation has been obtained only with proper As overpressure. The design of the substrate holder allowed a very uniform activation of the implanted layers as well as a negligible formation of dislocation slips. This method of rapid thermal annealing was successfully applied to the fabrication of broadband 4-8 GHz MMIC amplifiers.
Book Synopsis Rapid Thermal Annealing of Silicon Implanted Gallium Arsenide by : John Stuart Kleine
Download or read book Rapid Thermal Annealing of Silicon Implanted Gallium Arsenide written by John Stuart Kleine and published by . This book was released on 1986 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal Processing of Semiconductors by : Victor E. Borisenko
Download or read book Rapid Thermal Processing of Semiconductors written by Victor E. Borisenko and published by Springer Science & Business Media. This book was released on 2013-11-22 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: Rapid thermal processing has contributed to the development of single wafer cluster processing tools and other innovations in integrated circuit manufacturing environments. Borisenko and Hesketh review theoretical and experimental progress in the field, discussing a wide range of materials, processes, and conditions. They thoroughly cover the work of international investigators in the field.
Book Synopsis The Application of Rapid Thermal Annealing to Arsenic Implanted Single-crystal and Polycrystalline Silicon by : Judy Lynn Hoyt
Download or read book The Application of Rapid Thermal Annealing to Arsenic Implanted Single-crystal and Polycrystalline Silicon written by Judy Lynn Hoyt and published by . This book was released on 1987 with total page 225 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis A Comparison of Epitaxial Layers and Undoped Semi-insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide by : Alison Schary
Download or read book A Comparison of Epitaxial Layers and Undoped Semi-insulating Substrates for Use in Silicon Implantation Into Gallium Arsenide written by Alison Schary and published by . This book was released on 1988 with total page 654 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide by : Mark R. Wilson
Download or read book Rapid Thermal Annealing of Ion Implanted Layers in Gallium Arsenide written by Mark R. Wilson and published by . This book was released on 1986 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Research in Progress written by and published by . This book was released on 1987 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuit by : S. G. Liu
Download or read book High-Energy Ion Implantation for Multigigabit-Rate GaAs Integrated Circuit written by S. G. Liu and published by . This book was released on 1979 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt: The objectives of this program are: (1) study of high-energy ion implantation of donors into GaAs for multigigabit-rate GaAs integrated-circuit development; and (2) annealing of implanted GaAs using high-power lasers to remove lattice damage and activate implanted donors. We have: (1) investigated implantation of Si(28+) into semi-insulating GaAs with implant energies ranging from 40 keV to 1.2 MeV; (2) developed a capless thermal annealing process under arsenic overpressure which results in high activation efficiency with excellent surface morphology; (3) investigated laser-annealing of Si-implanted GaAs using a high-power Nd:Glass laser and a ruby laser. Electrical activation of high-dose, low-energy (
Book Synopsis Fabrication of GaAs Devices by : Albert G. Baca
Download or read book Fabrication of GaAs Devices written by Albert G. Baca and published by IET. This book was released on 2005-09 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides fundamental and practical information on all aspects of GaAs processing and gives pragmatic advice on cleaning and passivation, wet and dry etching and photolithography. Other topics covered include device performance for HBTs (Heterojunction Bipolar Transistors) and FETs (Field Effect Transistors), how these relate to processing choices, and special processing issues such as wet oxidation, which are especially important in optoelectronic devices. This book is suitable for both new and practising engineers.
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1990-05-23 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Book Synopsis Rapid Thermal Processing: Volume 52 by : Thomas O. Sedgwick
Download or read book Rapid Thermal Processing: Volume 52 written by Thomas O. Sedgwick and published by Mrs Proceedings. This book was released on 1986-04-15 with total page 512 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Book Synopsis Controlled Atmosphere Annealing of Ion Implanted Gallium Arsenide by : C. L. Anderson
Download or read book Controlled Atmosphere Annealing of Ion Implanted Gallium Arsenide written by C. L. Anderson and published by . This book was released on 1980 with total page 140 pages. Available in PDF, EPUB and Kindle. Book excerpt: Controlled atmosphere techniques were developed as an alternative to dielectric encapsulation for the high temperature anneal of ion implanted layers in GaAs. Two approaches: (1) the controlled atmosphere technique (CAT), and (2) the melt controlled ambient technique (MCAT) have been investigated. Using the CAT procedure, which involves annealing in flowing hydrogen with an arsenic overpressure, annealing without detectable surface erosion, has been performed at temperatures as high as 950 C, with or without encapsulants. Impurity diffusion, damage recovery, and electrical activity were investigated as a function of anneal parameters. Range studies of technologically important impurities such as S, Si, Se, Be and Mg were carried out. For the first time the role of the encapsulant on implanted profile degradation and the importance of Cr redistribution during the anneal cycle were determined. An improved CAT anneal system capable of production quantity throughput was developed and is in current use for device processing. (Author).
Book Synopsis Microwave Integrated Circuits by : Konishi
Download or read book Microwave Integrated Circuits written by Konishi and published by CRC Press. This book was released on 1991-03-29 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Presents to a wide range of students and engineers up-to-date techniques of MICs, with readily comprehensible explanations, providing a unified description of MICs, clarifying physical content, including sufficient data to be directly useful to active engineers, and providing a path of entry into th
Book Synopsis Effect of Thermal Annealing on Arsenic Ion-implanted, Boron-doped Czochralski Silicon by : Yan Bai
Download or read book Effect of Thermal Annealing on Arsenic Ion-implanted, Boron-doped Czochralski Silicon written by Yan Bai and published by . This book was released on 1997 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing by : Peter D. Lowen
Download or read book Characterization of Ion Implanted ZnSe/GaAs Upon Rapid Thermal Annealing written by Peter D. Lowen and published by . This book was released on 1991 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Physics Briefs written by and published by . This book was released on 1991 with total page 826 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Annealing and Solid Phase Epitaxy of Ion-implanted Gallium Arsenide by Rapid Thermal Processing by : Walter George Opyd
Download or read book The Annealing and Solid Phase Epitaxy of Ion-implanted Gallium Arsenide by Rapid Thermal Processing written by Walter George Opyd and published by . This book was released on 1989 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
