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Random Dopants And Low Frequency Noise Reduction In Deep Submicron Mosfet Technology
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Book Synopsis Random Dopants and Low-frequency Noise Reduction in Deep-submicron MOSFET Technology by : Drake A. Miller
Download or read book Random Dopants and Low-frequency Noise Reduction in Deep-submicron MOSFET Technology written by Drake A. Miller and published by . This book was released on 2011 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: The future of mixed-signal, memory, and microprocessor technologies are dependent on ever increasing analog and digital integration, higher cell densities, and demand for more processing power. As a result MOSFET device dimensions continue to shrink to meet these demands. A side effect of device scaling is increased variability at each technological node which affects both analog and digital circuits in terms of decreased yields, performance, and noise margins. At deep sub-micron dimensions the Low-Frequency Noise (LFN) of the MOSFET is dominated by the influence of one or more active traps capturing and emitting charge to and from the oxide creating wide variations in the LFN from otherwise identical devices. Additionally, the random position of dopant atoms near the Si/SiO2 interface create a potential landscape that induces regions of high and low conductivity which in turn causes a situation where the current is no longer uniform in the device, but consist of individual current paths or percolating currents. The coupling between the random variation of the percolation current and active traps in the oxide are responsible for the large spread (> 3 orders of magnitude) in the noise characteristics observed in deep sub-micron MOSFET devices. The compact LFN model presented here accounts for the action of traps on percolating currents in deep-sub-micron and nano-scale MOSFETs. Two schemes for reduction of LFN are studied based on the smoothing of the surface potential. First, noise reduction is demonstrated with measurements on sub-micron MOSFETs with forward substrate bias. Secondly, the model is further verified through the reduction of noise by the removal of dopant atoms near the Si/SiO2 interface of the device. Both schemes result in a lower noise and threshold device. Finally, these experimental findings are applied to a 2.2um 2 MP CMOS image sensor. From the temporal noise measurements on threshold implant process splits, the image sensor noise has been significantly reduced as a direct result of fundamentals described by this MOSFET LFN model and further proves the validity of these findings.
Book Synopsis Photon-Counting Image Sensors by : Eric R. Fossum
Download or read book Photon-Counting Image Sensors written by Eric R. Fossum and published by MDPI. This book was released on 2018-07-06 with total page 379 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book is a printed edition of the Special Issue "Photon-Counting Image Sensors" that was published in Sensors
Book Synopsis High Performance CMOS Range Imaging by : Andreas Süss
Download or read book High Performance CMOS Range Imaging written by Andreas Süss and published by CRC Press. This book was released on 2016-03-24 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work is dedicated to CMOS based imaging with the emphasis on the noise modeling, characterization and optimization in order to contribute to the design of high performance imagers in general and range imagers in particular. CMOS is known to be superior to CCD due to its flexibility in terms of integration capabilities, but typically has to be
Book Synopsis Low Frequency Noise in Deep Submicron MOSFETs by : Fang Wang
Download or read book Low Frequency Noise in Deep Submicron MOSFETs written by Fang Wang and published by . This book was released on 2000 with total page 164 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Low Frequency Noise and Quantum Transport in Deep-submicron N-MOSFET's by : Zhongming Shi
Download or read book Low Frequency Noise and Quantum Transport in Deep-submicron N-MOSFET's written by Zhongming Shi and published by . This book was released on 1992 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Experiments and Modeling of High-frequency Noise in Deep Submicron MOSFETs by : Saurabh Sirohi
Download or read book Experiments and Modeling of High-frequency Noise in Deep Submicron MOSFETs written by Saurabh Sirohi and published by . This book was released on 2005 with total page 198 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :Viranjay M. Srivastava Publisher :Springer Science & Business Media ISBN 13 :3319011650 Total Pages :209 pages Book Rating :4.3/5 (19 download)
Book Synopsis MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch by : Viranjay M. Srivastava
Download or read book MOSFET Technologies for Double-Pole Four-Throw Radio-Frequency Switch written by Viranjay M. Srivastava and published by Springer Science & Business Media. This book was released on 2013-10-07 with total page 209 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides analysis and discusses the design of various MOSFET technologies which are used for the design of Double-Pole Four-Throw (DP4T) RF switches for next generation communication systems. The authors discuss the design of the (DP4T) RF switch by using the Double-Gate (DG) MOSFET, as well as the Cylindrical Surrounding double-gate (CSDG) MOSFET. The effect of HFO2 (high dielectric material) in the design of DG MOSFET and CSDG MOSFET is also explored. Coverage includes comparison of Single-gate MOSFET and Double-gate MOSFET switching parameters, as well as testing of MOSFETs parameters using image acquisition.
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis New Processes and Technologies to Reduce the Low-Frequency Noise of Digital and Analog Circuits by : Philippe Gaubert
Download or read book New Processes and Technologies to Reduce the Low-Frequency Noise of Digital and Analog Circuits written by Philippe Gaubert and published by . This book was released on 2016 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The chapter is intended to provide the reader with means to reduce low-frequency noise in Metal-Oxide-Semiconductor Field-Effect-Transistor (MOSFET). It is demonstrated that low-resistivity source and drain electrodes can greatly lower the low-frequency noise level by suppressing their contribution to the total noise. Furthermore, new plasma processes having the advantages to work at low electron temperature can achieve a further reduction, thanks to the fabrication of a better gate oxide and to a reduction of damages generally induced by conventional plasma processes. Reducing the impact of the traps on the carrier flowing inside the channel by burying the channel can also achieve a reduction of the noise level, but unfortunately at the cost of a degradation of the electrical performances. Finally, the noise analysis of the low-frequency noise in accumulation-mode MOSFETs showed that these newly developed devices have a lower noise level than conventional structures, which, in addition to their superiority in term of electrical performances, establishes them as a serious platform for the next Complementary Metal-Oxide-Semiconductor Field-Effect-Transistor (CMOS) technology.
Book Synopsis Silicon Analog Components by : Badih El-Kareh
Download or read book Silicon Analog Components written by Badih El-Kareh and published by Springer. This book was released on 2019-08-07 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers modern analog components, their characteristics, and interactions with process parameters. It serves as a comprehensive guide, addressing both the theoretical and practical aspects of modern silicon devices and the relationship between their electrical properties and processing conditions. Based on the authors’ extensive experience in the development of analog devices, this book is intended for engineers and scientists in semiconductor research, development and manufacturing. The problems at the end of each chapter and the numerous charts, figures and tables also make it appropriate for use as a text in graduate and advanced undergraduate courses in electrical engineering and materials science. Enables engineers to understand analog device physics, and discusses important relations between process integration, device design, component characteristics, and reliability; Describes in step-by-step fashion the components that are used in analog designs, the particular characteristics of analog components, while comparing them to digital applications; Explains the second-order effects in analog devices, and trade-offs between these effects when designing components and developing an integrated process for their manufacturing.
Book Synopsis Random Telegraph Signals in Semiconductor Devices by : Eddy Simoen
Download or read book Random Telegraph Signals in Semiconductor Devices written by Eddy Simoen and published by . This book was released on 2016 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technology."--Prové de l'editor.
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Applied Science & Technology Index by :
Download or read book Applied Science & Technology Index written by and published by . This book was released on 1996 with total page 1628 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Noise in Nanoscale Semiconductor Devices by : Tibor Grasser
Download or read book Noise in Nanoscale Semiconductor Devices written by Tibor Grasser and published by Springer Nature. This book was released on 2020-04-26 with total page 724 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book summarizes the state-of-the-art, regarding noise in nanometer semiconductor devices. Readers will benefit from this leading-edge research, aimed at increasing reliability based on physical microscopic models. Authors discuss the most recent developments in the understanding of point defects, e.g. via ab initio calculations or intricate measurements, which have paved the way to more physics-based noise models which are applicable to a wider range of materials and features, e.g. III-V materials, 2D materials, and multi-state defects. Describes the state-of-the-art, regarding noise in nanometer semiconductor devices; Enables readers to design more reliable semiconductor devices; Offers the most up-to-date information on point defects, based on physical microscopic models.
Book Synopsis Ultra Low Noise CMOS Image Sensors by : Assim Boukhayma
Download or read book Ultra Low Noise CMOS Image Sensors written by Assim Boukhayma and published by Springer. This book was released on 2017-11-28 with total page 187 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis provides a thorough noise analysis for conventional CIS readout chains, while also presenting and discussing a variety of noise reduction techniques that allow the read noise in standard processes to be optimized. Two physical implementations featuring sub-0.5-electron RMS are subsequently presented to verify the proposed noise reduction techniques and provide a full characterization of a VGA imager. Based on the verified noise calculation, the impact of the technology downscaling on the input-referred noise is also studied. Further, the thesis covers THz CMOS image sensors and presents an original design that achieves ultra-low-noise performance. Last but not least, it provides a comprehensive review of CMOS image sensors.
Book Synopsis CMOS Analog Design Using All-Region MOSFET Modeling by : Márcio Cherem Schneider
Download or read book CMOS Analog Design Using All-Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Download or read book JJAP written by and published by . This book was released on 2000 with total page 1108 pages. Available in PDF, EPUB and Kindle. Book excerpt:
