Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures

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ISBN 13 :
Total Pages : 180 pages
Book Rating : 4.:/5 (758 download)

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Book Synopsis Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures by : Maxim Korytov

Download or read book Quantitative Transmission Electron Microscopy Study of III-Nitride Semiconductor Nanostructures written by Maxim Korytov and published by . This book was released on 2010 with total page 180 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this thesis is dedicated to the adaptation of high-resolution transmission electron microscopy (HRTEM) for the study of GaN-based materials. First, the principle of heterostructure composition evaluation by means of the relative atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on strain measurements were studied. The experimental part of this thesis is dedicated to the characterization of GaN quantum dots (QDs) realized on Al0.5Ga0.5N templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape changes from perfect pyramidal to truncated pyramidal with the increase of the nominal thickness of the deposited GaN layer. The capping of QDs having a perfect pyramidal shape leads to a QD shape truncation and a QD volume increase. Moreover, a phase separation was found in the AlGaN barriers with Al-rich zones formed above the QDs and Ga-rich regions placed around the Al-rich zones. The Al concentration into the Al-rich zones is about 70% and it decreases as the distance from the QD increases. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are proposed.

Transmission Electron Microscopy of Semiconductor Nanostructures

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Publisher : Springer
ISBN 13 : 3540364072
Total Pages : 238 pages
Book Rating : 4.5/5 (43 download)

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Book Synopsis Transmission Electron Microscopy of Semiconductor Nanostructures by : Andreas Rosenauer

Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by Springer. This book was released on 2003-07-03 with total page 238 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides tools well suited for the quantitative investigation of semiconductor electron microscopy. These tools allow for the accurate determination of the composition of ternary semiconductor nanostructures with a spatial resolution at near atomic scales. The book focuses on new methods including strain state analysis as well as evaluation of the composition via the lattice fringe analysis (CELFA) technique. The basics of these procedures as well as their advantages, drawbacks and sources of error are all discussed. The techniques are applied to quantum wells and dots in order to give insight into kinetic growth effects such as segregation and migration. In the first part of the book the fundamentals of transmission electron microscopy are provided. These are needed for an understanding of the digital image analysis techniques described in the second part of the book. There the reader will find information on different methods of composition determination. The third part of the book focuses on applications such as composition determination in InGaAs Stranski--Krastanov quantum dots. Finally it is shown how an improvement in the precision of the composition evaluation can be obtained by combining CELFA with electron holography. This is demonstrated for an AlAs/GaAs superlattice.

Electron Microscopy and III-nitride Nanostructures

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ISBN 13 :
Total Pages : 212 pages
Book Rating : 4.:/5 (492 download)

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Book Synopsis Electron Microscopy and III-nitride Nanostructures by : Eirini Sarigiannidou

Download or read book Electron Microscopy and III-nitride Nanostructures written by Eirini Sarigiannidou and published by . This book was released on 2004 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we present the structural characterization of GaN/AIN quantum wells (QWs) and quantum dots (QDs) grown by plasma assisted molecular beam epitaxy. The technique we use is the transmission electron microscopy in (i) high resolution, (ii) energy filtered, (Hi) conventional and (iv) convergent beam modes. The quantitative analysis of our nanostructures is realized using a projection method and the geometric phase analysis. In order to obtain the most accurate results those methods are optimized and specific experimental conditions, like off-axis HRTEM images, are applied. A comparison study between a Ga-face and a N-face GaN/AIN superlattice (SL) is presented and the higher structural quality (the Ga-face SL is proven: abrupt and uniform interfaces, absence of inversion domain boundaries and partially strained QWs. We also analyze the effects of AIN overgrowth on the structural quality of GaN nanostructures. We show that the overgrowth process implies a thinning of the GaN QWs and an isotropic reduction of the GaN QDs size. The phenomenon is attributed to an exchange mechanism between AI atoms from the cap layer and Ga atoms in the nanostructures. We investigate the strain distribution in a GaN/AIN QD superlattice. Using HRTEM, theoretical calculations and X-ray diffraction experiments we demonstrate that the vertical alignment of the QDs is due to a modulation of the strain state of the AIN layers. Finally, we examine the polytype conversion of a GaN film from N-face wurtzite to zinc-blende structure due to Mg high doping.

Quantitative tem study of nitride semiconductors

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Publisher : Omn.Univ.Europ.
ISBN 13 : 9786131545009
Total Pages : 196 pages
Book Rating : 4.5/5 (45 download)

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Book Synopsis Quantitative tem study of nitride semiconductors by : Korytov-M

Download or read book Quantitative tem study of nitride semiconductors written by Korytov-M and published by Omn.Univ.Europ.. This book was released on 2018-02-28 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt: The theoretical part of this work is dedicated to the adaptation of high-resolution transmission electron microscopy for studying III-nitride semiconductors. First, the principle of heterostructure composition evaluation by means of atomic displacement measurement is stated. The comparison of two strain measurement techniques, geometric phase analysis and projection method, is then presented. Finally, the effects of acquisition conditions on the strain measurements were elaborated. The experimental part of this work is dedicated to the characterization of GaN quantum dots (QDs) grown on AlGaN templates. This study revealed several phenomena original for nitride semiconductors. The surface QD shape depends on the GaN layer thickness, whereas the buried QD shape and volume are influenced by the QD capping. Moreover, a phase separation occurs in the AlGaN barriers. To explain the observed phenomena, various models founded on the principle of total energy minimization have been developed. Several approaches, based on the results of this study and aimed for the improvement of the optoelectronic devices properties, are also proposed.

Transmission Electron Microscopy Study of Nitride Nanostructures

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (9 download)

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Book Synopsis Transmission Electron Microscopy Study of Nitride Nanostructures by : 張文明

Download or read book Transmission Electron Microscopy Study of Nitride Nanostructures written by 張文明 and published by . This book was released on 2013 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Transmission Electron Microscopy of Semiconductor Nanostructures

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Publisher :
ISBN 13 : 9783662146170
Total Pages : 256 pages
Book Rating : 4.1/5 (461 download)

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Book Synopsis Transmission Electron Microscopy of Semiconductor Nanostructures by : Andreas Rosenauer

Download or read book Transmission Electron Microscopy of Semiconductor Nanostructures written by Andreas Rosenauer and published by . This book was released on 2014-01-15 with total page 256 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy

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ISBN 13 :
Total Pages : 117 pages
Book Rating : 4.:/5 (658 download)

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Book Synopsis Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy by : 李仁宏

Download or read book Investigation of Nitride Semiconductor Nanostructures with Transmission Electron Microscopy written by 李仁宏 and published by . This book was released on 2009 with total page 117 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scanning Transmission Electron Microscopy

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Publisher : CRC Press
ISBN 13 : 0429516169
Total Pages : 162 pages
Book Rating : 4.4/5 (295 download)

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Book Synopsis Scanning Transmission Electron Microscopy by : Alina Bruma

Download or read book Scanning Transmission Electron Microscopy written by Alina Bruma and published by CRC Press. This book was released on 2020-12-22 with total page 162 pages. Available in PDF, EPUB and Kindle. Book excerpt: Scanning Transmission Electron Microscopy: Advanced Characterization Methods for Materials Science Applications The information comprised in this book is focused on discussing the latest approaches in the recording of high-fidelity quantitative annular dark-field (ADF) data. It showcases the application of machine learning in electron microscopy and the latest advancements in image processing and data interpretation for materials notoriously difficult to analyze using scanning transmission electron microscopy (STEM). It also highlights strategies to record and interpret large electron diffraction datasets for the analysis of nanostructures. This book: Discusses existing approaches for experimental design in the recording of high-fidelity quantitative ADF data Presents the most common types of scintillator-photomultiplier ADF detectors, along with their strengths and weaknesses. Proposes strategies to minimize the introduction of errors from these detectors and avenues for dealing with residual errors Discusses the practice of reliable multiframe imaging, along with the benefits and new experimental opportunities it presents in electron dose or dose-rate management Focuses on supervised and unsupervised machine learning for electron microscopy Discusses open data formats, community-driven software, and data repositories Proposes methods to process information at both global and local scales, and discusses avenues to improve the storage, transfer, analysis, and interpretation of multidimensional datasets Provides the spectrum of possibilities to study materials at the resolution limit by means of new developments in instrumentation Recommends methods for quantitative structural characterization of sensitive nanomaterials using electron diffraction techniques and describes strategies to collect electron diffraction patterns for such materials This book helps academics, researchers, and industry professionals in materials science, chemistry, physics, and related fields to understand and apply computer-science–derived analysis methods to solve problems regarding data analysis and interpretation of materials properties.

Iii-nitride Materials, Devices And Nano-structures

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Publisher : World Scientific
ISBN 13 : 1786343207
Total Pages : 424 pages
Book Rating : 4.7/5 (863 download)

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Book Synopsis Iii-nitride Materials, Devices And Nano-structures by : Zhe Chuan Feng

Download or read book Iii-nitride Materials, Devices And Nano-structures written by Zhe Chuan Feng and published by World Scientific. This book was released on 2017-04-20 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: Group III-Nitrides semiconductor materials, including GaN, InN, AlN, InGaN, AlGaN and AlInGaN, i.e. (Al, In, Ga)N, are excellent semiconductors, covering the spectral range from deep ultraviolet (DUV) to UV, visible and infrared, with unique properties very suitable for modern electronic and optoelectronic applications. Remarkable breakthroughs have been achieved in recent years for research and development (R&D) in these materials and devices, such as high-power and high brightness UV-blue-green-white light emitting diodes (LEDs), UV-blue-green laser diodes (LDs), photo-detectors and various optoelectronics and electronics devices and applications.The Nobel Prize in Physics 2014 was awarded jointly to Isamu Akasaki, Hiroshi Amano and Shuji Nakamura 'for the invention of efficient blue light-emitting diodes which has enabled bright and energy-saving white light sources'. Red and green diodes had been invented since 1960s-70s but without blue LED. Despite considerable efforts, the blue LED had remained a challenge for a long time. The success and inventions on GaN-based LEDs were revolutionary and benefiting for mankind. III-Nitrides-based industry has formed and acquired rapid developments over the world. Incandescent light bulbs lit the 20th century and the 21st century will be lit by LED lamps.Before this book, the editor has edited two books, III-Nitride Semiconductor Materials (2006) and III-Nitride Devices and Nanoengineering (2008), both published by ICP/WSP, in the fields of III-Nitride. The developments of these materials and devices are moving rapidly. Many data or knowledge, some even just published only recently, have been modified and needed to be upgraded. This new book, III-Nitride Materials, Devices and Nano-Structures as the third instalment, will cover the rapid new developments and achievements in the III-Nitride fields, particularly those made since 2009.

Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (277 download)

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Book Synopsis Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures by : Chun Maw Tey

Download or read book Advanced Transmission Electron Microscopy Studies of III-V Semiconductor Nanostructures written by Chun Maw Tey and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Transmission Electron Microscopy in Micro-nanoelectronics

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Publisher : John Wiley & Sons
ISBN 13 : 1118579054
Total Pages : 280 pages
Book Rating : 4.1/5 (185 download)

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Book Synopsis Transmission Electron Microscopy in Micro-nanoelectronics by : Alain Claverie

Download or read book Transmission Electron Microscopy in Micro-nanoelectronics written by Alain Claverie and published by John Wiley & Sons. This book was released on 2013-01-29 with total page 280 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, the availability of bright and highly coherent electron sources and sensitive detectors has radically changed the type and quality of the information which can be obtained by transmission electron microscopy (TEM). TEMs are now present in large numbers not only in academia, but also in industrial research centers and fabs. This book presents in a simple and practical way the new quantitative techniques based on TEM which have recently been invented or developed to address most of the main challenging issues scientists and process engineers have to face to develop or optimize semiconductor layers and devices. Several of these techniques are based on electron holography; others take advantage of the possibility of focusing intense beams within nanoprobes. Strain measurements and mappings, dopant activation and segregation, interfacial reactions at the nanoscale, defect identification and specimen preparation by FIB are among the topics presented in this book. After a brief presentation of the underlying theory, each technique is illustrated through examples from the lab or fab.

Transmission Electron Microscopy Characterization of Nanomaterials

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Publisher : Springer Science & Business Media
ISBN 13 : 3642389341
Total Pages : 718 pages
Book Rating : 4.6/5 (423 download)

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Book Synopsis Transmission Electron Microscopy Characterization of Nanomaterials by : Challa S.S.R. Kumar

Download or read book Transmission Electron Microscopy Characterization of Nanomaterials written by Challa S.S.R. Kumar and published by Springer Science & Business Media. This book was released on 2013-12-09 with total page 718 pages. Available in PDF, EPUB and Kindle. Book excerpt: Third volume of a 40volume series on nanoscience and nanotechnology, edited by the renowned scientist Challa S.S.R. Kumar. This handbook gives a comprehensive overview about Transmission electron microscopy characterization of nanomaterials. Modern applications and state-of-the-art techniques are covered and make this volume an essential reading for research scientists in academia and industry.

Advanced Transmission Electron Microscopy

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Publisher : Springer
ISBN 13 : 1493966073
Total Pages : 741 pages
Book Rating : 4.4/5 (939 download)

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Book Synopsis Advanced Transmission Electron Microscopy by : Jian Min Zuo

Download or read book Advanced Transmission Electron Microscopy written by Jian Min Zuo and published by Springer. This book was released on 2016-10-26 with total page 741 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume expands and updates the coverage in the authors' popular 1992 book, Electron Microdiffraction. As the title implies, the focus of the book has changed from electron microdiffraction and convergent beam electron diffraction to all forms of advanced transmission electron microscopy. Special attention is given to electron diffraction and imaging, including high-resolution TEM and STEM imaging, and the application of these methods to crystals, their defects, and nanostructures. The authoritative text summarizes and develops most of the useful knowledge which has been gained over the years from the study of the multiple electron scattering problem, the recent development of aberration correctors and their applications to materials structure characterization, as well as the authors' extensive teaching experience in these areas. Advanced Transmission Electron Microscopy: Imaging and Diffraction in Nanoscience is ideal for use as an advanced undergraduate or graduate level text in support of course materials in Materials Science, Physics or Chemistry departments.

Scanning Transmission Electron Microscopy Of Nanomaterials: Basics Of Imaging And Analysis

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Publisher : World Scientific
ISBN 13 : 1783264713
Total Pages : 616 pages
Book Rating : 4.7/5 (832 download)

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Book Synopsis Scanning Transmission Electron Microscopy Of Nanomaterials: Basics Of Imaging And Analysis by : Nobuo Tanaka

Download or read book Scanning Transmission Electron Microscopy Of Nanomaterials: Basics Of Imaging And Analysis written by Nobuo Tanaka and published by World Scientific. This book was released on 2014-08-21 with total page 616 pages. Available in PDF, EPUB and Kindle. Book excerpt: The basics, present status and future prospects of high-resolution scanning transmission electron microscopy (STEM) are described in the form of a textbook for advanced undergraduates and graduate students. This volume covers recent achievements in the field of STEM obtained with advanced technologies such as spherical aberration correction, monochromator, high-sensitivity electron energy loss spectroscopy and the software of image mapping. The future prospects chapter also deals with z-slice imaging and confocal STEM for 3D analysis of nanostructured materials.

Scotland's Heritage

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Publisher : World Scientific
ISBN 13 : 9814322806
Total Pages : 644 pages
Book Rating : 4.8/5 (143 download)

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Book Synopsis Scotland's Heritage by : Richard Haight

Download or read book Scotland's Heritage written by Richard Haight and published by World Scientific. This book was released on 2011-09-01 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: '... These volumes provide the very latest in this critical technology and are an invaluable resource for scientists in both academia and industry concerned with the semiconductor future and all of science.'Foreword by Leonard C Feldman (Director Institute for Advanced Materials, Devices and Nanotechnology, Rutgers University, USA)Highlights. As we delve more deeply into the physics and chemistry of functional materials and processes, we are inexorably driven to the nanoscale. And nowhere is the development of instrumentation and associated techniques more important to scientific progress than in the area of nanoscience. The dramatic expansion of efforts to peer into nanoscale materials and processes has made it critical to capture and summarize the cutting-edge instrumentation and techniques that have become indispensable for scientific investigation in this arena. This Handbook is a key resource developed for scientists, engineers and advanced graduate students in which eminent scientists present the forefront of instrumentation and techniques for the study of structural, optical and electronic properties of semiconductor nanostructures.

A Transmission Electron Microscopy Study of III-V Nitride Heteroepitaxial Films

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Publisher :
ISBN 13 :
Total Pages : 154 pages
Book Rating : 4.:/5 (398 download)

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Book Synopsis A Transmission Electron Microscopy Study of III-V Nitride Heteroepitaxial Films by : Wen Chen

Download or read book A Transmission Electron Microscopy Study of III-V Nitride Heteroepitaxial Films written by Wen Chen and published by . This book was released on 1997 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scanning Transmission Electron Microscopy Study of III-V Nitrides

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Publisher :
ISBN 13 :
Total Pages : 420 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Scanning Transmission Electron Microscopy Study of III-V Nitrides by : Karen Andre Mkhoyan

Download or read book Scanning Transmission Electron Microscopy Study of III-V Nitrides written by Karen Andre Mkhoyan and published by . This book was released on 2004 with total page 420 pages. Available in PDF, EPUB and Kindle. Book excerpt: