Process Development And Characterization Of Algan Gan Heterostructure Field Effect Transistors

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Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance

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Author : Robert F Davis
Publisher : World Scientific
ISBN 13 : 9814482692
Total Pages : 295 pages
Book Rating : 4.8/5 (144 download)

Book Synopsis Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance by : Robert F Davis

Download or read book Gan-based Materials And Devices: Growth, Fabrication, Characterization And Performance written by Robert F Davis and published by World Scientific. This book was released on 2004-05-07 with total page 295 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors have stimulated a great deal of interest in research and development regarding nitride materials growth and optoelectronic and nitride-based electronic devices. High electron mobility and saturation velocity, high sheet carrier concentration at heterojunction interfaces, high breakdown field, and low thermal impedance of GaN-based films grown over SiC or bulk AlN substrates make nitride-based electronic devices very promising. The chemical inertness of nitrides is another key property.This volume, written by experts on different aspects of nitride technology, addresses the entire spectrum of issues related to nitride materials and devices, and it will be useful for technologists, scientists, engineers, and graduate students who are working on wide bandgap materials and devices. The book can also be used as a supplementary text for graduate courses on wide bandgap semiconductor technology.

Chemical Abstracts

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Author :
Publisher :
ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

State-of-the-art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications

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Author : M. E. Overberg
Publisher : The Electrochemical Society
ISBN 13 : 1566776287
Total Pages : 204 pages
Book Rating : 4.5/5 (667 download)

Book Synopsis State-of-the-art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications by : M. E. Overberg

Download or read book State-of-the-art Program on Compound Semiconductors 48 (SOTAPOCS 48) and ZnO, InZnO, and InGaO Related Materials and Devices for Electronic and Photonic Applications written by M. E. Overberg and published by The Electrochemical Society. This book was released on 2008 with total page 204 pages. Available in PDF, EPUB and Kindle. Book excerpt: This issue contains invited and contributed talks on the growth, processing, and characterization of electronic and photonic devices based upon compound semiconductor and oxide materials.

JJAP

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Author :
Publisher :
ISBN 13 :
Total Pages : 300 pages
Book Rating : 4.X/5 (6 download)

Book Synopsis JJAP by :

Download or read book JJAP written by and published by . This book was released on 2000 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook for III-V High Electron Mobility Transistor Technologies

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Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862539
Total Pages : 430 pages
Book Rating : 4.4/5 (298 download)

Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 430 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Lecture Notes in Analog Electronics

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Author : Vančo B. Litovski
Publisher : Springer Nature
ISBN 13 : 9811965285
Total Pages : 374 pages
Book Rating : 4.8/5 (119 download)

Book Synopsis Lecture Notes in Analog Electronics by : Vančo B. Litovski

Download or read book Lecture Notes in Analog Electronics written by Vančo B. Litovski and published by Springer Nature. This book was released on 2023-01-29 with total page 374 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses larger signal amplifiers (denoted as PA). Large signal amplifiers are dealing with signals whose magnitude is such that the operation of the active element can no longer be considered linear. They are usually designed to get as much power gain and efficiency as possible. That is why they are often called power amplifiers. In this book, two implementations of PA are considered. First, it is of interest to obtain large signals (current or voltage) at the output of a cascade of direct coupled amplifiers. In this case, linearity, frequency response, and speed are the most important requirements. Second are real power amplifiers where the power delivered to the load is of primary interest. Of course, efficiency, linearity, and high frequency response are of interest, too. A very special attention is paid to modern power electronic components such as Power BJT, VDMOS, IGBT, SiC MOS, and GaN HEMT. DC and switching properties of all these devices are studied in much detail. This book also includes a set of appendices which cover: solved problems, SPICE simulation results for selected set of circuits, and a short review of microelectronic technology process

Wide Bandgap Based Devices

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Author : Farid Medjdoub
Publisher : MDPI
ISBN 13 : 3036505660
Total Pages : 242 pages
Book Rating : 4.0/5 (365 download)

Book Synopsis Wide Bandgap Based Devices by : Farid Medjdoub

Download or read book Wide Bandgap Based Devices written by Farid Medjdoub and published by MDPI. This book was released on 2021-05-26 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt: Emerging wide bandgap (WBG) semiconductors hold the potential to advance the global industry in the same way that, more than 50 years ago, the invention of the silicon (Si) chip enabled the modern computer era. SiC- and GaN-based devices are starting to become more commercially available. Smaller, faster, and more efficient than their counterpart Si-based components, these WBG devices also offer greater expected reliability in tougher operating conditions. Furthermore, in this frame, a new class of microelectronic-grade semiconducting materials that have an even larger bandgap than the previously established wide bandgap semiconductors, such as GaN and SiC, have been created, and are thus referred to as “ultra-wide bandgap” materials. These materials, which include AlGaN, AlN, diamond, Ga2O3, and BN, offer theoretically superior properties, including a higher critical breakdown field, higher temperature operation, and potentially higher radiation tolerance. These attributes, in turn, make it possible to use revolutionary new devices for extreme environments, such as high-efficiency power transistors, because of the improved Baliga figure of merit, ultra-high voltage pulsed power switches, high-efficiency UV-LEDs, and electronics. This Special Issue aims to collect high quality research papers, short communications, and review articles that focus on wide bandgap device design, fabrication, and advanced characterization. The Special Issue will also publish selected papers from the 43rd Workshop on Compound Semiconductor Devices and Integrated Circuits, held in France (WOCSDICE 2019), which brings together scientists and engineers working in the area of III–V, and other compound semiconductor devices and integrated circuits. In particular, the following topics are addressed: – GaN- and SiC-based devices for power and optoelectronic applications – Ga2O3 substrate development, and Ga2O3 thin film growth, doping, and devices – AlN-based emerging material and devices – BN epitaxial growth, characterization, and devices

GaN-based Materials and Devices

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Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)

Book Synopsis GaN-based Materials and Devices by : Michael Shur

Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.

Physics of Semiconductor Devices

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Author : Vikram Kumar
Publisher : Allied Publishers
ISBN 13 : 9780819445001
Total Pages : 748 pages
Book Rating : 4.4/5 (45 download)

Book Synopsis Physics of Semiconductor Devices by : Vikram Kumar

Download or read book Physics of Semiconductor Devices written by Vikram Kumar and published by Allied Publishers. This book was released on 2002 with total page 748 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanoelectronics

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Author : Robert Puers
Publisher : John Wiley & Sons
ISBN 13 : 352734053X
Total Pages : 694 pages
Book Rating : 4.5/5 (273 download)

Book Synopsis Nanoelectronics by : Robert Puers

Download or read book Nanoelectronics written by Robert Puers and published by John Wiley & Sons. This book was released on 2017-06-19 with total page 694 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering first-hand insights by top scientists and industry experts at the forefront of R&D into nanoelectronics, this book neatly links the underlying technological principles with present and future applications. A brief introduction is followed by an overview of present and emerging logic devices, memories and power technologies. Specific chapters are dedicated to the enabling factors, such as new materials, characterization techniques, smart manufacturing and advanced circuit design. The second part of the book provides detailed coverage of the current state and showcases real future applications in a wide range of fields: safety, transport, medicine, environment, manufacturing, and social life, including an analysis of emerging trends in the internet of things and cyber-physical systems. A survey of main economic factors and trends concludes the book. Highlighting the importance of nanoelectronics in the core fields of communication and information technology, this is essential reading for materials scientists, electronics and electrical engineers, as well as those working in the semiconductor and sensor industries.

Handbook for III-V High Electron Mobility Transistor Technologies

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Author : D. Nirmal
Publisher : CRC Press
ISBN 13 : 0429862520
Total Pages : 434 pages
Book Rating : 4.4/5 (298 download)

Book Synopsis Handbook for III-V High Electron Mobility Transistor Technologies by : D. Nirmal

Download or read book Handbook for III-V High Electron Mobility Transistor Technologies written by D. Nirmal and published by CRC Press. This book was released on 2019-05-14 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

Journal of the Physical Society of Japan

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Author : Nihon Butsuri Gakkai
Publisher :
ISBN 13 :
Total Pages : 1014 pages
Book Rating : 4.U/5 (183 download)

Book Synopsis Journal of the Physical Society of Japan by : Nihon Butsuri Gakkai

Download or read book Journal of the Physical Society of Japan written by Nihon Butsuri Gakkai and published by . This book was released on 2000 with total page 1014 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nitride Wide Bandgap Semiconductor Material and Electronic Devices

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Author : Yue Hao
Publisher : CRC Press
ISBN 13 : 1315351838
Total Pages : 325 pages
Book Rating : 4.3/5 (153 download)

Book Synopsis Nitride Wide Bandgap Semiconductor Material and Electronic Devices by : Yue Hao

Download or read book Nitride Wide Bandgap Semiconductor Material and Electronic Devices written by Yue Hao and published by CRC Press. This book was released on 2016-11-03 with total page 325 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book systematically introduces physical characteristics and implementations of III-nitride wide bandgap semiconductor materials and electronic devices, with an emphasis on high-electron-mobility transistors (HEMTs). The properties of nitride semiconductors make the material very suitable for electronic devices used in microwave power amplification, high-voltage switches, and high-speed digital integrated circuits.

Power GaN Devices

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Author : Matteo Meneghini
Publisher : Springer
ISBN 13 : 3319431994
Total Pages : 383 pages
Book Rating : 4.3/5 (194 download)

Book Synopsis Power GaN Devices by : Matteo Meneghini

Download or read book Power GaN Devices written by Matteo Meneghini and published by Springer. This book was released on 2016-09-08 with total page 383 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents the first comprehensive overview of the properties and fabrication methods of GaN-based power transistors, with contributions from the most active research groups in the field. It describes how gallium nitride has emerged as an excellent material for the fabrication of power transistors; thanks to the high energy gap, high breakdown field, and saturation velocity of GaN, these devices can reach breakdown voltages beyond the kV range, and very high switching frequencies, thus being suitable for application in power conversion systems. Based on GaN, switching-mode power converters with efficiency in excess of 99 % have been already demonstrated, thus clearing the way for massive adoption of GaN transistors in the power conversion market. This is expected to have important advantages at both the environmental and economic level, since power conversion losses account for 10 % of global electricity consumption. The first part of the book describes the properties and advantages of gallium nitride compared to conventional semiconductor materials. The second part of the book describes the techniques used for device fabrication, and the methods for GaN-on-Silicon mass production. Specific attention is paid to the three most advanced device structures: lateral transistors, vertical power devices, and nanowire-based HEMTs. Other relevant topics covered by the book are the strategies for normally-off operation, and the problems related to device reliability. The last chapter reviews the switching characteristics of GaN HEMTs based on a systems level approach. This book is a unique reference for people working in the materials, device and power electronics fields; it provides interdisciplinary information on material growth, device fabrication, reliability issues and circuit-level switching investigation.

Japanese Journal of Applied Physics

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Author :
Publisher :
ISBN 13 :
Total Pages : 1538 pages
Book Rating : 4.:/5 (318 download)

Book Synopsis Japanese Journal of Applied Physics by :

Download or read book Japanese Journal of Applied Physics written by and published by . This book was released on 2003 with total page 1538 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Scientific and Technical Aerospace Reports

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Author :
Publisher :
ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.X/5 (4 download)

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Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

International Aerospace Abstracts

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Author :
Publisher :
ISBN 13 :
Total Pages : 974 pages
Book Rating : 4.F/5 ( download)

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Download or read book International Aerospace Abstracts written by and published by . This book was released on 1999 with total page 974 pages. Available in PDF, EPUB and Kindle. Book excerpt: