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Author : Ruth Elizabeth Mason
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (111 download)
Download or read book Positron Studies of Ion Implanted Silicon written by Ruth Elizabeth Mason and published by . This book was released on 2006 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Susumu Namba
Publisher : Springer Science & Business Media
ISBN 13 : 1468421514
Total Pages : 716 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors written by Susumu Namba and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 716 pages. Available in PDF, EPUB and Kindle. Book excerpt: The technique of ion implantation has become a very useful and stable technique in the field of semiconductor device fabrication. This use of ion implantation is being adopted by industry. Another important application is the fundamental study of the physical properties of materials. The First Conference on Ion Implantation in Semiconductors was held at Thousand Oaks, California in 1970. The second conference in this series was held at Garmish-Partenkirchen, Germany, in 1971. At the third conference, which convened at Yorktown Heights, New York in 1973, the emphasis was broadened to include metals and insulators as well as semiconductors. This scope of the conference was still accepted at the fourth conference which was held at Osaka, Japan, in 1974. A huge number of papers had been submitted to this conference. All papers which were presented at the Fourth International Conference on Ion Implantation in Semiconductors and Other Materials are included in this proceedings. The success of this conference was due to technical presentations and discussions of 224 participants from 14 countries as well as to financial support from many companies in Japan. On behalf of the committee, I wish to thank the authors for their excellent papers and the sponsors for their financial support. The International Committee responsible for advising this conference consisted of B.L. Crowder, J.A. Davies, G. Dearna1ey, F.H. Eisen, Ph. G1otin, T. Itoh, A.U. MacRae, J.W. Mayer, S. Namba, I. Ruge, and F.L. Vook.
Author : Ishaq Ahmad
Publisher : BoD – Books on Demand
ISBN 13 : 9535132377
Total Pages : 154 pages
Book Rating : 4.5/5 (351 download)
Download or read book Ion Implantation written by Ishaq Ahmad and published by BoD – Books on Demand. This book was released on 2017-06-14 with total page 154 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation is one of the promising areas of sciences and technologies. It has been observed as a continuously evolving technology. In this book, there is a detailed overview of the recent ion implantation research and innovation along with the existing ion implantation technological issues especially in microelectronics. The book also reviews the basic knowledge of the radiation-induced defects production during the ion implantation in case of a semiconductor structure for fabrication and development of the required perfect microelectronic devices. The improvement of the biocompatibility of biomaterials by ion implantation, which is a hot research topic, has been summarized in the book as well. Moreover, advanced materials characterization techniques are also covered in this book to evaluate the ion implantation impact on the materials.
Author : Reinhard Krause-Rehberg
Publisher : Springer Science & Business Media
ISBN 13 : 9783540643715
Total Pages : 408 pages
Book Rating : 4.6/5 (437 download)
Download or read book Positron Annihilation in Semiconductors written by Reinhard Krause-Rehberg and published by Springer Science & Business Media. This book was released on 1999 with total page 408 pages. Available in PDF, EPUB and Kindle. Book excerpt: This comprehensive book reports on recent investigations of lattice imperfections in semiconductors by means of positron annihilation. It reviews positron techniques, and describes the application of these techniques to various kinds of defects, such as vacancies, impurity vacancy complexes and dislocations.
Author : J.F. Ziegler
Publisher : Elsevier
ISBN 13 : 0323144012
Total Pages : 649 pages
Book Rating : 4.3/5 (231 download)
Download or read book Ion Implantation Science and Technology written by J.F. Ziegler and published by Elsevier. This book was released on 2012-12-02 with total page 649 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion Implantation: Science and Technology serves as both an introduction to and tutorial on the science, techniques, and machines involved in ion implantation. The book is divided into two parts. Part 1 discusses topics such as the history of the ion implantation; the different types and purposes of ion implanters; the penetration of energetic ions into solids; damage annealing in silicon; and ion implantation metallurgy. Part 2 covers areas such as ion implementation system concepts; ion sources; underlying principles related to ion optics; and safety and radiation considerations in ion implantation. The text is recommended for engineers who would like to be acquainted with the principles and processes behind ion implantation or make studies on the field.
Author : Billy Crowder
Publisher : Springer Science & Business Media
ISBN 13 : 146842064X
Total Pages : 644 pages
Book Rating : 4.4/5 (684 download)
Download or read book Ion Implantation in Semiconductors and Other Materials written by Billy Crowder and published by Springer Science & Business Media. This book was released on 2013-03-13 with total page 644 pages. Available in PDF, EPUB and Kindle. Book excerpt: During the years since the first conference in this series was held at Thousand Oaks, California, in 1970, ion implantation has been an expanding and exciting research area. The advances in this field were so rapid that a second conference convened at Garmisch Partenkirchen, Germany, in 1971. At the present time, our under standing of the ion implantation process in semiconductors such as Si and Ge has reached a stage of maturity and ion implantation techniques are firmly established in semiconductor device technology. The advances in compound semiconductors have not been as rapid. There has also been a shift in emphasis in ion implanta tion research from semiconductors to other materials such as metals and insulators. It was appropriate to increase the scope of the conference and the IIIrd International Conference on Ion Implanta tion in Semiconductors and Other Materials was held at Yorktown Heights, New York, December 11 to 14, 1972. A significant number of the papers presented at this conference dealt with ion implanta tion in metals, insulators, and compound semiconductors. The International Committee responsible for organizing this conference consisted of B. L. Crowder, J. A. Davies, F. H. Eisen, Ph. Glotin, T. Itoh, A. U. MacRae, J. W. Mayer, G. Dearnaley, and I. Ruge. The Conference attracted 180 participants from twelve countries. The success of the Conference was due in large measure to the financial support of our sponsors, Air Force Cambridge Research Laboratories and the Office of Naval Research.
Author :
Publisher :
ISBN 13 :
Total Pages : 19 pages
Book Rating : 4.:/5 (727 download)
Download or read book Positron Annihilation Study of P Implanted Si written by and published by . This book was released on 1992 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-energy ion implantation (above 200 keV) is now commonly used in a variety of VLSI processes. The high energy required for these implants is often achieved by implanting multiply charged ions, which inevitably brings in the problem of low-energy ion contamination. The low-energy contamination is difficult to diagnose and detect. Positron annihilation spectroscopy is used to examine the defect distributions in these high energy implants with varying degrees of contamination.
Download or read book Ion Implantation Damage in SiOŒ2 Studied with Positron Annihilation Spectroscopy written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : H. Rajainmäki
Publisher :
ISBN 13 :
Total Pages : 19 pages
Book Rating : 4.:/5 (931 download)
Download or read book Proton-implanted and Helium-implanted Silicon written by H. Rajainmäki and published by . This book was released on 1990 with total page 19 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ingolf Ruge
Publisher : Springer Science & Business Media
ISBN 13 : 3642806600
Total Pages : 519 pages
Book Rating : 4.6/5 (428 download)
Download or read book Ion Implantation in Semiconductors written by Ingolf Ruge and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 519 pages. Available in PDF, EPUB and Kindle. Book excerpt: In recent years great progress has been made in the field of ion implantation, particularly with respect to applications in semiconductors. It would be impos sible not to note the growing interest in this field, both by research groups and those directly concerned with production of devices. Furthermore, as several papers have pointed out, ion implantation and its associated technologies promise exciting advances in the development of new kinds of devices and provide power ful new tools for materials investigations. It was, therefore, appropriate to arrange the II. International Conference on Ion Implantation in Semiconductors within the rather short time of one year since the first conference was held in 1970 in Thousand Oaks, California. Although ori ginally planned on a small scale with a very limited number of participants, more than two hundred scientists from 15 countries participated in the Conference which was held May 24 - 28, 1971 at the Congress Center in Garmisch-Partenkirchen. This volume contains the papers that were presented at the Conference. Due to the tremendous volume of research presented, publication here of all the works in full detail was not possible. Many authors therefore graciously agreed to submit abbreviated versions of their papers.
Author : King-Fung Ho
Publisher : Open Dissertation Press
ISBN 13 : 9781374722552
Total Pages : 268 pages
Book Rating : 4.7/5 (225 download)
Download or read book SOME POSITRON ANNIHILATION STU written by King-Fung Ho and published by Open Dissertation Press. This book was released on 2017-01-27 with total page 268 pages. Available in PDF, EPUB and Kindle. Book excerpt: This dissertation, "Some Positron Annihilation Studies on Highly Doped and Supersaturated N-type Silicon" by King-fung, Ho, 何競豐, was obtained from The University of Hong Kong (Pokfulam, Hong Kong) and is being sold pursuant to Creative Commons: Attribution 3.0 Hong Kong License. The content of this dissertation has not been altered in any way. We have altered the formatting in order to facilitate the ease of printing and reading of the dissertation. All rights not granted by the above license are retained by the author. Abstract: Abstract of thesis entitled SOME POSITRON ANNIHILATION STUDIES ON HIGHLY DOPED AND SUPERSATURATED N-TYPE SILICON Submitted by HO KING FUNG for the degree of Doctor of Philosophy at The University of Hong Kong in July 2004 Positron Annihilation Spectroscopy (PAS) is a non-destructive technique that can be extensively used to probe the point defect structures found in solids. The basic physics behind PAS such as implantation, transport, vacancy trapping and annihilation are reviewed together with the various experimental techniques. Deconvolution algorithms have been applied to Coincidence Doppler Broadening Spectroscopy (CDBS) to improve the effective momentum resolution of the technique. The CDBS system instrumental resolution function is obtained using 85 the 514-keV line from Sr. The generalized least square method with Tikonov-Miller regularization, which incorporates a priori non-negativity constraints, is found to be very effective. Monte-Carlo simulations of CDBS have been used to optimize the deconvolution. The deconvolution technique, when applied to a series of well annealed polycrystalline metals, gives results that are found to be comparable quality-wise to those obtained by one dimensional Angular Correlation of Annihilation Radiation (ACAR). An attempt was made to evaluate the significance of ACAR data from positrons trapped in a crystal defect by defect studying the E-center (vacancy-dopant pair) in silicon. The Fourier transformation of the ACAR momentum distribution coming from positrons trapped at the E-center was studied. This gives in real-space the autocorrelation function of the positron-electron wavefunction product at the site of annihilation. Employing the ratio of the autocorrelation function for the E-center and bulk silicon, the positron binding energy to the E-center was estimated. It has been possible to approximately isolate that part of the E-centers' autocorrelation function that originates from the localized defect orbitals and to see spatial features relating to atomic positions in the E-center. Nonequilibrium processing consisting of ion implantation followed by annealing has been employed to produce supersaturated Antimony doped silicon. The defect structure of the ion implanted region and the post-implanted region have been studied using the Variable Energy Positron Annihilation Spectroscopy (VEPAS) technique. Evidence is given that positrons are trapped into precipitates or get trapped at precipitate boundaries at annealing temperatures less than 600C. Surprisingly, new vacancy defects appear in the implanted region at annealing temperatures over 600C. This is tentatively attributed to the fact that Sb precipitates begin to dissolve at these temperatures into VSb type complexes. DOI: 10.5353/th_b3028710 Subjects: Positron annihilation Electron spectroscopy Silicon crystals - Defects
Author : Paul G. Coleman
Publisher : World Scientific
ISBN 13 : 9789810233945
Total Pages : 348 pages
Book Rating : 4.2/5 (339 download)
Download or read book Positron Beams and Their Applications written by Paul G. Coleman and published by World Scientific. This book was released on 2000 with total page 348 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a coherent and comprehensive overview of the generation and application of mono-energetic positron beams. It has been written by acknowledged experts, at a level accessible to graduate students working, or planning to work, with positron beams, and to scientists in other areas who want to know something about the field.The book begins with a brief historical introduction and an overview of how positron beams are generated and transported. A description of the fate of slow positrons in gaseous and condensed matter, with reference to many of the fundamental measurements made possible by the advent of positron beams, is followed by a discussion on applications in the study of solid surfaces, defect profiling in subsurface regions, interfaces and thin films, and the probing of bulk properties in novel ways. The book ends with a look at the future, considering the prospects for intense positron beams and their potential for further research.
Author :
Publisher :
ISBN 13 : 9789633717004
Total Pages : 13 pages
Book Rating : 4.7/5 (17 download)
Download or read book Ellipsometric and Channeling Studies on Ion-implanted Silicon written by and published by . This book was released on 1980 with total page 13 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Mon-Yen Tsai
Publisher :
ISBN 13 :
Total Pages : 270 pages
Book Rating : 4.:/5 (227 download)
Download or read book Studies of High-dose Ion Implantation in Silicon written by Mon-Yen Tsai and published by . This book was released on 1978 with total page 270 pages. Available in PDF, EPUB and Kindle. Book excerpt: Properties of high-dose BF2(+), Si(+) + B(+), and Ga(+) implanted Si are studied by differential resistivity and Hall effect measurements, secondary ion mass spectrometry (SIMS), deep-level transient spectroscopy (DLTS), and Auger electron spectroscopy (AES). (Author).
Author : Emanuele Rimini
Publisher : Springer Science & Business Media
ISBN 13 : 1461522595
Total Pages : 400 pages
Book Rating : 4.4/5 (615 download)
Download or read book Ion Implantation: Basics to Device Fabrication written by Emanuele Rimini and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 400 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ion implantation offers one of the best examples of a topic that starting from the basic research level has reached the high technology level within the framework of microelectronics. As the major or the unique procedure to selectively dope semiconductor materials for device fabrication, ion implantation takes advantage of the tremendous development of microelectronics and it evolves in a multidisciplinary frame. Physicists, chemists, materials sci entists, processing, device production, device design and ion beam engineers are all involved in this subject. The present monography deals with several aspects of ion implantation. The first chapter covers basic information on the physics of devices together with a brief description of the main trends in the field. The second chapter is devoted to ion im planters, including also high energy apparatus and a description of wafer charging and contaminants. Yield is a quite relevant is sue in the industrial surrounding and must be also discussed in the academic ambient. The slowing down of ions is treated in the third chapter both analytically and by numerical simulation meth ods. Channeling implants are described in some details in view of their relevance at the zero degree implants and of the available industrial parallel beam systems. Damage and its annealing are the key processes in ion implantation. Chapter four and five are dedicated to this extremely important subject.
Author : S. Coffa
Publisher : Newnes
ISBN 13 : 044459972X
Total Pages : 1031 pages
Book Rating : 4.4/5 (445 download)
Download or read book Ion Implantation Technology - 94 written by S. Coffa and published by Newnes. This book was released on 1995-05-16 with total page 1031 pages. Available in PDF, EPUB and Kindle. Book excerpt: The aim of these proceedings is to present and stimulate discussion on the many subjects related to ion implantation among a broad mix of specialists from areas as diverse as materials science, device production and advanced ion implanters. The contents open with a paper on the future developments of the microelectronics industry in Europe within the framework of the global competition. The subsequent invited and oral presentations cover in detail the following areas: trends in processing and devices, ion-solid interaction, materials science issues, advanced implanter systms, process control and yield, future trends and applications.
Author : R. Jones
Publisher : Springer Science & Business Media
ISBN 13 : 9400903553
Total Pages : 535 pages
Book Rating : 4.4/5 (9 download)
Download or read book Early Stages of Oxygen Precipitation in Silicon written by R. Jones and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 535 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was fOlllld as long ago as 1954 that heating oxygen rich silicon to around 450°C produced electrical active defects - the so called thermal donors. The inference was that the donors were created by some defect produced by the aggregation of oxygen. Since then, there has been an enor mous amount of work carried out to elucidate the detailed mechanism by which they, and other defects, are generated. This task has been made all the more relevant as silicon is one of the most important technological ma terials in everyday use and oxygen is its most common impurity. However, even after forty years, the details of the processes by which the donors and other defects are generated are still obscure. The difficulty of the problem is made more apparent when it is realised that there is only one oxygen atom in about ten thousand silicon atoms and so it is difficult to devise experiments to 'see' what happens during the early stages of oxygen precipitation when complexes of two, three or four 0xygen atoms are formed. However, new important new findings have emerged from experiments such as the careful monitoring of the changes in the infra red lattice absorption spectra over long durations, the observation of the growth of new bands which are correlated with electronic infra-red data, and high resolution ENDOR studies. In addition, progress has been made in the improved control of samples containing oxygen, carbon, nitrogen and hydrogen.
