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ISBN 13 :
Total Pages : 962 pages
Book Rating : 4.E/5 ( download)
Download or read book Diffusion and Defect Data written by and published by . This book was released on 2002 with total page 962 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Daniel J. Friedman
Publisher :
ISBN 13 :
Total Pages : 424 pages
Book Rating : 4.:/5 (318 download)
Download or read book Progress in Compound Semiconductors III - Electronic and Optoelectronic Applications: Volume 799 written by Daniel J. Friedman and published by . This book was released on 2004-04-07 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MRS Symposium Proceeding series is an internationally recognised reference suitable for researchers and practitioners.
Author : Toshio Hyodo
Publisher :
ISBN 13 :
Total Pages : 588 pages
Book Rating : 4.3/5 (91 download)
Download or read book Positron Annihilation written by Toshio Hyodo and published by . This book was released on 2004 with total page 588 pages. Available in PDF, EPUB and Kindle. Book excerpt: There is no doubt that, when it comes to the study of the structures and defects of materials, there is presently no technique that rivals positron annihilation. The increasing demands for higher accuracy and reliability provide a constant stimulus to the field, and the present work presents the newest and most important scientific discoveries made in the field of positron annihilation. Many important new results concerning positron and positronium studies of nano-materials, defects, porous materials, low-k dielectrics, polymers, liquids, atomic physics and new instrumentation are reported in the present contributions; presented by experts from all over the world. There can be no better way of keeping up with this rapidly advancing field.
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ISBN 13 :
Total Pages : 980 pages
Book Rating : 4.F/5 ( download)
Download or read book Dissertation Abstracts International written by and published by . This book was released on 2008 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 2002 pages
Book Rating : 4.3/5 (91 download)
Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2002 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Ashraf Alam
Publisher : CRC Press
ISBN 13 :
Total Pages : 170 pages
Book Rating : 4.3/5 (91 download)
Download or read book Positron Studies in Condensed Matter, Selected Papers for the INT Positron Workshop, M^D'unchen, August 1988 written by Ashraf Alam and published by CRC Press. This book was released on 1989-07 with total page 170 pages. Available in PDF, EPUB and Kindle. Book excerpt: Positron Studies of Condensed Matter highlights some of the outstanding recent achievements from the use of positron annihilation in solid state physics and outlines possible future trends. Current research is reviewed in authoritative articles by some of the leading practitioners in the field. Important new results in the study of electron momentum densities, Compton scattering and high-temperature superconductors are considered in detail, and the currently developing area of gas-defect interactions is also reviewed. The latest work on applications of poistron microbeams is also included. This volume contains the invited papers and selected contributed papers from the International Workshop on Positron Annihilation in Condensed Matter, held in Munich in August 1988. The emphasis of the meeting was on the most significant results of recent years in this constantly expanding field. Presenting the most important up-to-date data on the subject, Positron Studies of Condensed Matter is an important reference volume for all workers in positron physics, solid state physics, metallurgy and materials science, and will be useful to final-year undergraduates studying solid state physics.
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ISBN 13 :
Total Pages : 1412 pages
Book Rating : 4.E/5 ( download)
Download or read book Metals Abstracts written by and published by . This book was released on 1981 with total page 1412 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1162 pages
Book Rating : 4.3/5 (91 download)
Download or read book Physics Briefs written by and published by . This book was released on 1994 with total page 1162 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1360 pages
Book Rating : 4.3/5 (243 download)
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 302 pages
Book Rating : 4.3/5 (243 download)
Download or read book Research in Progress written by and published by . This book was released on 1963 with total page 302 pages. Available in PDF, EPUB and Kindle. Book excerpt:
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ISBN 13 :
Total Pages : 1576 pages
Book Rating : 4.:/5 (319 download)
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1995 with total page 1576 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dieter K. Schroder
Publisher : John Wiley & Sons
ISBN 13 : 0471739065
Total Pages : 800 pages
Book Rating : 4.4/5 (717 download)
Download or read book Semiconductor Material and Device Characterization written by Dieter K. Schroder and published by John Wiley & Sons. This book was released on 2015-06-29 with total page 800 pages. Available in PDF, EPUB and Kindle. Book excerpt: This Third Edition updates a landmark text with the latest findings The Third Edition of the internationally lauded Semiconductor Material and Device Characterization brings the text fully up-to-date with the latest developments in the field and includes new pedagogical tools to assist readers. Not only does the Third Edition set forth all the latest measurement techniques, but it also examines new interpretations and new applications of existing techniques. Semiconductor Material and Device Characterization remains the sole text dedicated to characterization techniques for measuring semiconductor materials and devices. Coverage includes the full range of electrical and optical characterization methods, including the more specialized chemical and physical techniques. Readers familiar with the previous two editions will discover a thoroughly revised and updated Third Edition, including: Updated and revised figures and examples reflecting the most current data and information 260 new references offering access to the latest research and discussions in specialized topics New problems and review questions at the end of each chapter to test readers' understanding of the material In addition, readers will find fully updated and revised sections in each chapter. Plus, two new chapters have been added: Charge-Based and Probe Characterization introduces charge-based measurement and Kelvin probes. This chapter also examines probe-based measurements, including scanning capacitance, scanning Kelvin force, scanning spreading resistance, and ballistic electron emission microscopy. Reliability and Failure Analysis examines failure times and distribution functions, and discusses electromigration, hot carriers, gate oxide integrity, negative bias temperature instability, stress-induced leakage current, and electrostatic discharge. Written by an internationally recognized authority in the field, Semiconductor Material and Device Characterization remains essential reading for graduate students as well as for professionals working in the field of semiconductor devices and materials. An Instructor's Manual presenting detailed solutions to all the problems in the book is available from the Wiley editorial department.
Author : Peter YU
Publisher : Springer Science & Business Media
ISBN 13 : 3540264752
Total Pages : 651 pages
Book Rating : 4.5/5 (42 download)
Download or read book Fundamentals of Semiconductors written by Peter YU and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 651 pages. Available in PDF, EPUB and Kindle. Book excerpt: Excellent bridge between general solid-state physics textbook and research articles packed with providing detailed explanations of the electronic, vibrational, transport, and optical properties of semiconductors "The most striking feature of the book is its modern outlook ... provides a wonderful foundation. The most wonderful feature is its efficient style of exposition ... an excellent book." Physics Today "Presents the theoretical derivations carefully and in detail and gives thorough discussions of the experimental results it presents. This makes it an excellent textbook both for learners and for more experienced researchers wishing to check facts. I have enjoyed reading it and strongly recommend it as a text for anyone working with semiconductors ... I know of no better text ... I am sure most semiconductor physicists will find this book useful and I recommend it to them." Contemporary Physics Offers much new material: an extensive appendix about the important and by now well-established, deep center known as the DX center, additional problems and the solutions to over fifty of the problems at the end of the various chapters.
Author : P. Hautojärvi
Publisher : Springer Science & Business Media
ISBN 13 : 364281316X
Total Pages : 266 pages
Book Rating : 4.6/5 (428 download)
Download or read book Positrons in Solids written by P. Hautojärvi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: In condensed matter initially fast positrons annihilate after having reached equi librium with the surroundings. The interaction of positrons with matter is governed by the laws of ordinary quantum mechanics. Field theory and antiparticle properties enter only in the annihilation process leading to the emergence of energetic photons. The monitoring of annihilation radiation by nuclear spectroscopic methods provides valuable information on the electron-positron system which can directly be related to the electronic structure of the medium. Since the positron is a positive electron its behavior in matter is especially interesting to solid-state and atomic physi cists. The small mass quarantees that the positron is really a quantum mechanical particle and completely different from any other particles and atoms. Positron physics started about 25 years ago but discoveries of new features in its interac tion with matter have maintained continuous interest and increasing activity in the field. Nowadays it is becoming part of the "stock-in-trade" of experimental physics.
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ISBN 13 :
Total Pages : 980 pages
Book Rating : 4.F/5 ( download)
Download or read book International Aerospace Abstracts written by and published by . This book was released on 1998 with total page 980 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : M. R. Brozel
Publisher : Inst of Engineering & Technology
ISBN 13 : 9780852968857
Total Pages : 981 pages
Book Rating : 4.9/5 (688 download)
Download or read book Properties of Gallium Arsenide written by M. R. Brozel and published by Inst of Engineering & Technology. This book was released on 1996 with total page 981 pages. Available in PDF, EPUB and Kindle. Book excerpt: It was in 1986 that INSPEC (The Information Division of the Institution of Electrical Engineers) published the book Properties of Gallium Arsenide. Since then, major developments have taken place. This third edition is comprised of 150 specially commissioned articles contributed by experts from the USA, Europe and Japan.
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Publisher : Academic Press
ISBN 13 : 0128019409
Total Pages : 458 pages
Book Rating : 4.1/5 (28 download)
Download or read book Defects in Semiconductors written by and published by Academic Press. This book was released on 2015-06-08 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume, number 91 in the Semiconductor and Semimetals series, focuses on defects in semiconductors. Defects in semiconductors help to explain several phenomena, from diffusion to getter, and to draw theories on materials' behavior in response to electrical or mechanical fields. The volume includes chapters focusing specifically on electron and proton irradiation of silicon, point defects in zinc oxide and gallium nitride, ion implantation defects and shallow junctions in silicon and germanium, and much more. It will help support students and scientists in their experimental and theoretical paths. - Expert contributors - Reviews of the most important recent literature - Clear illustrations - A broad view, including examination of defects in different semiconductors
