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Author : James Edward Chung
Publisher :
ISBN 13 :
Total Pages : 254 pages
Book Rating : 4.:/5 (33 download)
Download or read book Performance and Reliability Design Issues for Deep-submicrometer MOSFETs written by James Edward Chung and published by . This book was released on 1990 with total page 254 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Chris Toumazou
Publisher : IET
ISBN 13 : 9780863412943
Total Pages : 622 pages
Book Rating : 4.4/5 (129 download)
Download or read book Switched-currents written by Chris Toumazou and published by IET. This book was released on 1993 with total page 622 pages. Available in PDF, EPUB and Kindle. Book excerpt: Analogue designers from industry and academia worldwide have contributed to this first volume devoted entirely to switched-current analogue signal processing. The volume introduces the basic switched- current technique, reviews the state-of-the-art, and presents practical chip examples. Numerous application areas are described, ranging from filters and data converters to image processing applications. It also gives a comprehensive treatment of the fundamental principles of switched-current circuits and systems. For undergraduate and graduate students and practicing engineers in industry. Distributed by INSPEC. Annotation copyright by Book News, Inc., Portland, OR
Author : Jian-hui Huang
Publisher :
ISBN 13 :
Total Pages : 462 pages
Book Rating : 4.:/5 (33 download)
Download or read book A Physical, Scalable and Efficient Deep-submicrometer MOSFET Model for VLSI Digital/analog Circuit Simulation written by Jian-hui Huang and published by . This book was released on 1994 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Eiji Takeda
Publisher : Elsevier
ISBN 13 : 0080926223
Total Pages : 329 pages
Book Rating : 4.0/5 (89 download)
Download or read book Hot-Carrier Effects in MOS Devices written by Eiji Takeda and published by Elsevier. This book was released on 1995-11-28 with total page 329 pages. Available in PDF, EPUB and Kindle. Book excerpt: The exploding number of uses for ultrafast, ultrasmall integrated circuits has increased the importance of hot-carrier effects in manufacturing as well as for other technological applications. They are rapidly movingout of the research lab and into the real world. This book is derived from Dr. Takedas book in Japanese, Hot-Carrier Effects, (published in 1987 by Nikkei Business Publishers). However, the new book is much more than a translation. Takedas original work was a starting point for developing this much more complete and fundamental text on this increasingly important topic. The new work encompasses not only all the latest research and discoveries made in the fast-paced area of hot carriers, but also includes the basics of MOS devices, and the practical considerations related to hot carriers. - Chapter one itself is a comprehensive review of MOS device physics which allows a reader with little background in MOS devices to pick up a sufficient amount of information to be able to follow the rest of the book - The book is written to allow the reader to learn about MOS Device Reliability in a relatively short amount of time, making the texts detailed treatment of hot-carrier effects especially useful and instructive to both researchers and others with varyingamounts of experience in the field - The logical organization of the book begins by discussing known principles, then progresses to empirical information and, finally, to practical solutions - Provides the most complete review of device degradation mechanisms as well as drain engineering methods - Contains the most extensive reference list on the subject
Author : Yuhua Cheng
Publisher : Springer Science & Business Media
ISBN 13 : 0306470500
Total Pages : 467 pages
Book Rating : 4.3/5 (64 download)
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
Author : Antonio R. Alvarez
Publisher : Springer Science & Business Media
ISBN 13 : 1461532183
Total Pages : 412 pages
Book Rating : 4.4/5 (615 download)
Download or read book BiCMOS Technology and Applications written by Antonio R. Alvarez and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 412 pages. Available in PDF, EPUB and Kindle. Book excerpt: BiCMOS Technology and Applications, Second Edition provides a synthesis of available knowledge about the combination of bipolar and MOS transistors in a common integrated circuit - BiCMOS. In this new edition all chapters have been updated and completely new chapters on emerging topics have been added. In addition, BiCMOS Technology and Applications, Second Edition provides the reader with a knowledge of either CMOS or Bipolar technology/design a reference with which they can make educated decisions regarding the viability of BiCMOS in their own application. BiCMOS Technology and Applications, Second Edition is vital reading for practicing integrated circuit engineers as well as technical managers trying to evaluate business issues related to BiCMOS. As a textbook, this book is also appropriate at the graduate level for a special topics course in BiCMOS. A general knowledge in device physics, processing and circuit design is assumed. Given the division of the book, it lends itself well to a two-part course; one on technology and one on design. This will provide advanced students with a good understanding of tradeoffs between bipolar and MOS devices and circuits.
Author : Rohit Dhiman
Publisher : Springer
ISBN 13 : 813222132X
Total Pages : 122 pages
Book Rating : 4.1/5 (322 download)
Download or read book Compact Models and Performance Investigations for Subthreshold Interconnects written by Rohit Dhiman and published by Springer. This book was released on 2014-11-07 with total page 122 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book provides a detailed analysis of issues related to sub-threshold interconnect performance from the perspective of analytical approach and design techniques. Particular emphasis is laid on the performance analysis of coupling noise and variability issues in sub-threshold domain to develop efficient compact models. The proposed analytical approach gives physical insight of the parameters affecting the transient behavior of coupled interconnects. Remedial design techniques are also suggested to mitigate the effect of coupling noise. The effects of wire width, spacing between the wires, wire length are thoroughly investigated. In addition, the effect of parameters like driver strength on peak coupling noise has also been analyzed. Process, voltage and temperature variations are prominent factors affecting sub-threshold design and have also been investigated. The process variability analysis has been carried out using parametric analysis, process corner analysis and Monte Carlo technique. The book also provides a qualitative summary of the work reported in the literature by various researchers in the design of digital sub-threshold circuits. This book should be of interest for researchers and graduate students with deeper insights into sub-threshold interconnect models in particular. In this sense, this book will best fit as a text book and/or a reference book for students who are initiated in the area of research and advanced courses in nanotechnology, interconnect design and modeling.
Author :
Publisher : Newnes
ISBN 13 : 0080932282
Total Pages : 3572 pages
Book Rating : 4.0/5 (89 download)
Download or read book Comprehensive Semiconductor Science and Technology written by and published by Newnes. This book was released on 2011-01-28 with total page 3572 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors are at the heart of modern living. Almost everything we do, be it work, travel, communication, or entertainment, all depend on some feature of semiconductor technology. Comprehensive Semiconductor Science and Technology, Six Volume Set captures the breadth of this important field, and presents it in a single source to the large audience who study, make, and exploit semiconductors. Previous attempts at this achievement have been abbreviated, and have omitted important topics. Written and Edited by a truly international team of experts, this work delivers an objective yet cohesive global review of the semiconductor world. The work is divided into three sections. The first section is concerned with the fundamental physics of semiconductors, showing how the electronic features and the lattice dynamics change drastically when systems vary from bulk to a low-dimensional structure and further to a nanometer size. Throughout this section there is an emphasis on the full understanding of the underlying physics. The second section deals largely with the transformation of the conceptual framework of solid state physics into devices and systems which require the growth of extremely high purity, nearly defect-free bulk and epitaxial materials. The last section is devoted to exploitation of the knowledge described in the previous sections to highlight the spectrum of devices we see all around us. Provides a comprehensive global picture of the semiconductor world Each of the work's three sections presents a complete description of one aspect of the whole Written and Edited by a truly international team of experts
Author : H. Craig Casey
Publisher : John Wiley & Sons
ISBN 13 : 0471171344
Total Pages : 549 pages
Book Rating : 4.4/5 (711 download)
Download or read book Devices for Integrated Circuits written by H. Craig Casey and published by John Wiley & Sons. This book was released on 1998-12-14 with total page 549 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book develops the device physics of the Si and III-V compound semiconductor devices used in integrated circuits. Important equations are derived from basic physical concepts. The physics of these devices are related to the parameters used in SPICE. Terminology is intended to prepare students for reading technical journals on semiconductor devices. This text is suitable for first-year graduate students and seniors in Electrical Engineering; graduate students in Material Science and Chemical Engineering, interested in semiconductor materials; Computer Science students interested in custom VLSI design; and professionals in the semiconductor industry.
Author :
Publisher :
ISBN 13 :
Total Pages : 2316 pages
Book Rating : 4.3/5 (243 download)
Download or read book Science Abstracts written by and published by . This book was released on 1993 with total page 2316 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Min-Chie Jeng
Publisher :
ISBN 13 :
Total Pages : 458 pages
Book Rating : 4.:/5 (7 download)
Download or read book Design and Modeling of Deep-submicrometer MOSFETs written by Min-Chie Jeng and published by . This book was released on 1989 with total page 458 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kai Chen
Publisher :
ISBN 13 :
Total Pages : 480 pages
Book Rating : 4.:/5 (34 download)
Download or read book Analytical and Compact Models (BSIM3v3) for Deep Submicron CMOS written by Kai Chen and published by . This book was released on 1998 with total page 480 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Philip E. Madrid
Publisher : Addison Wesley Publishing Company
ISBN 13 :
Total Pages : 54 pages
Book Rating : 4.:/5 (318 download)
Download or read book Device Design and Process Window Analysis of a Deep Submicron CMOS VLSI Technology written by Philip E. Madrid and published by Addison Wesley Publishing Company. This book was released on 1992 with total page 54 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 392 pages
Book Rating : 4.3/5 (91 download)
Download or read book Proceedings of Technical Papers written by and published by . This book was released on 1997 with total page 392 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author :
Publisher :
ISBN 13 :
Total Pages : 784 pages
Book Rating : 4.X/5 (4 download)
Download or read book Proceedings written by and published by . This book was released on 1991 with total page 784 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : IEEE Electron Devices Society
Publisher : Institute of Electrical & Electronics Engineers(IEEE)
ISBN 13 : 9780780332430
Total Pages : 276 pages
Book Rating : 4.3/5 (324 download)
Download or read book 1997 IEEE International Conference on Microelectronic Test Structures Proceedings written by IEEE Electron Devices Society and published by Institute of Electrical & Electronics Engineers(IEEE). This book was released on 1997 with total page 276 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : C.K. Maiti
Publisher : CRC Press
ISBN 13 : 1466500557
Total Pages : 323 pages
Book Rating : 4.4/5 (665 download)
Download or read book Strain-Engineered MOSFETs written by C.K. Maiti and published by CRC Press. This book was released on 2012-11-28 with total page 323 pages. Available in PDF, EPUB and Kindle. Book excerpt: Currently strain engineering is the main technique used to enhance the performance of advanced silicon-based metal-oxide-semiconductor field-effect transistors (MOSFETs). Written from an engineering application standpoint, Strain-Engineered MOSFETs introduces promising strain techniques to fabricate strain-engineered MOSFETs and to methods to assess the applications of these techniques. The book provides the background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOSFETs at nanoscale. This book focuses on recent developments in strain-engineered MOSFETS implemented in high-mobility substrates such as, Ge, SiGe, strained-Si, ultrathin germanium-on-insulator platforms, combined with high-k insulators and metal-gate. It covers the materials aspects, principles, and design of advanced devices, fabrication, and applications. It also presents a full technology computer aided design (TCAD) methodology for strain-engineering in Si-CMOS technology involving data flow from process simulation to process variability simulation via device simulation and generation of SPICE process compact models for manufacturing for yield optimization. Microelectronics fabrication is facing serious challenges due to the introduction of new materials in manufacturing and fundamental limitations of nanoscale devices that result in increasing unpredictability in the characteristics of the devices. The down scaling of CMOS technologies has brought about the increased variability of key parameters affecting the performance of integrated circuits. This book provides a single text that combines coverage of the strain-engineered MOSFETS and their modeling using TCAD, making it a tool for process technology development and the design of strain-engineered MOSFETs.
