Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide

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ISBN 13 :
Total Pages : 168 pages
Book Rating : 4.:/5 (224 download)

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Book Synopsis Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide by : Qing Lu

Download or read book Optical Properties of EL2 in Neutron Transmutation Doped Gallium Arsenide written by Qing Lu and published by . This book was released on 1989 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide

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ISBN 13 :
Total Pages : 126 pages
Book Rating : 4.:/5 (211 download)

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Book Synopsis Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide by : Guihua Lu

Download or read book Effect of Neutron Transmutation Doping on the Optical Properties of Gallium Arsenide written by Guihua Lu and published by . This book was released on 1988 with total page 126 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Properties of the EL2 Defect in Thermally Annealed Neutron Irradiated Semi-insulating Gallium Arsenide

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ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (224 download)

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Book Synopsis Optical Properties of the EL2 Defect in Thermally Annealed Neutron Irradiated Semi-insulating Gallium Arsenide by : Shiun Wang

Download or read book Optical Properties of the EL2 Defect in Thermally Annealed Neutron Irradiated Semi-insulating Gallium Arsenide written by Shiun Wang and published by . This book was released on 1989 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Neutron Transmutation Doping of Gallium Arsenide

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ISBN 13 : 9780642598776
Total Pages : 11 pages
Book Rating : 4.5/5 (987 download)

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Book Synopsis Neutron Transmutation Doping of Gallium Arsenide by : D. Alexiev

Download or read book Neutron Transmutation Doping of Gallium Arsenide written by D. Alexiev and published by . This book was released on 1987 with total page 11 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Radiation Effects in Advanced Semiconductor Materials and Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 3662049740
Total Pages : 424 pages
Book Rating : 4.6/5 (62 download)

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Book Synopsis Radiation Effects in Advanced Semiconductor Materials and Devices by : C. Claeys

Download or read book Radiation Effects in Advanced Semiconductor Materials and Devices written by C. Claeys and published by Springer Science & Business Media. This book was released on 2013-11-11 with total page 424 pages. Available in PDF, EPUB and Kindle. Book excerpt: This wide-ranging book summarizes the current knowledge of radiation defects in semiconductors, outlining the shortcomings of present experimental and modelling techniques and giving an outlook on future developments. It also provides information on the application of sensors in nuclear power plants.

Electrical Properties of Neutron-transmutation-doped GaAs Below 450 K

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ISBN 13 :
Total Pages : 16 pages
Book Rating : 4.:/5 (244 download)

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Book Synopsis Electrical Properties of Neutron-transmutation-doped GaAs Below 450 K by : Mohammad Ali Vesaghi

Download or read book Electrical Properties of Neutron-transmutation-doped GaAs Below 450 K written by Mohammad Ali Vesaghi and published by . This book was released on 1981 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Physics Briefs

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ISBN 13 :
Total Pages : 1812 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1992 with total page 1812 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Response of EL2 in Gallium Arsenide

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ISBN 13 :
Total Pages : 186 pages
Book Rating : 4.:/5 (211 download)

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Book Synopsis Optical Response of EL2 in Gallium Arsenide by : Norman C. Koger

Download or read book Optical Response of EL2 in Gallium Arsenide written by Norman C. Koger and published by . This book was released on 1988 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces

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ISBN 13 :
Total Pages : 288 pages
Book Rating : 4.:/5 (724 download)

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Book Synopsis Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces by : Marko Mykola Gregory Slusarczuk

Download or read book Study of Electronic and Optical Properties of Gallium Arsenide Surfaces and Interfaces written by Marko Mykola Gregory Slusarczuk and published by . This book was released on 1979 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Characterization of the Optical Properties of Aluminum Gallium Arsenide

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ISBN 13 :
Total Pages : 98 pages
Book Rating : 4.:/5 (153 download)

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Book Synopsis Characterization of the Optical Properties of Aluminum Gallium Arsenide by : Paul John Pearah

Download or read book Characterization of the Optical Properties of Aluminum Gallium Arsenide written by Paul John Pearah and published by . This book was released on 1986 with total page 98 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Properties of Gallium Arsenide-phosphide

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ISBN 13 :
Total Pages : 220 pages
Book Rating : 4.:/5 (6 download)

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Book Synopsis Optical Properties of Gallium Arsenide-phosphide by : George Dee Clark

Download or read book Optical Properties of Gallium Arsenide-phosphide written by George Dee Clark and published by . This book was released on 1966 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices

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ISBN 13 :
Total Pages : 228 pages
Book Rating : 4.:/5 (226 download)

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Book Synopsis Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices by : Daming Huang

Download or read book Optical Properties of Gallium Arsenide and Indium Gallium Arsenide Quantum Wells and Their Applications to Opto-electronic Devices written by Daming Huang and published by . This book was released on 1990 with total page 228 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this thesis we investigate the optical properties of modulation doped GaAs/AlGaAs and strained-layer undoped InGaAs/GaAs multiple quantum well structures (MQWS). The phenomena studied are the effects of carrier, strain, and the electric field on the absorption of excitons. For GaAs/AlGaAs modulation doped MQWS, the quenching of excitons by free carriers has been demonstrated. The comparison of the experimental results with calculations which consider phase space filling, screening, and exchange interaction showed the phase space filling to be the dominant mechanism responsible for the change of oscillator strength and binding energy of excitons associated with partially filled subband. On the other hand, the screening and exchange interaction are equally important to excitons associated with empty subbands. For InGaAs/GaAs strained-layer MQWS, we have demonstrated that the band edges are dramatically modified by strain. We determined the band discontinuities at InGaAs/GaAs interfaces using optical absorption, and showed that in this structure the heavy holes are confined in InGaAs layers while the light holes are in GaAs layers, in contrast to GaAs/AlGaAs MQWS. We also explore applications of GaAs/AlGaAs and InGaAs/GaAs MQWS to opto-electronic devices. The principle of devices investigated is mainly based on the electric field effect on the excitonic absorption in MQWS (the quantum confined Stark effect). Two examples presented in this thesis are the strained-layer InGaAs/GaAs MQWS electroabsorption modulators grown on GaAs substrates and the GaAs/AlGaAs MQWS reflection modulators grown on Si substrates. The large modulation observed in the absorption coefficient by an electric field is expected to facilitate opto-electronic integration.

Optical Properties of Gallium Arsenide-Phosphide

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ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (932 download)

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Book Synopsis Optical Properties of Gallium Arsenide-Phosphide by :

Download or read book Optical Properties of Gallium Arsenide-Phosphide written by and published by . This book was released on 1966 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Energy Research Abstracts

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ISBN 13 :
Total Pages : 444 pages
Book Rating : 4.0/5 ( download)

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Book Synopsis Energy Research Abstracts by :

Download or read book Energy Research Abstracts written by and published by . This book was released on 1994 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Preparation and Optical Properties of Aluminum - Gallium - Arsenide

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ISBN 13 :
Total Pages : 368 pages
Book Rating : 4.:/5 (243 download)

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Book Synopsis The Preparation and Optical Properties of Aluminum - Gallium - Arsenide by : Walter Henry Berninger

Download or read book The Preparation and Optical Properties of Aluminum - Gallium - Arsenide written by Walter Henry Berninger and published by . This book was released on 1971 with total page 368 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 2240 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 2240 pages. Available in PDF, EPUB and Kindle. Book excerpt:

VLSI Fabrication Principles

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Publisher : John Wiley & Sons
ISBN 13 : 0471580058
Total Pages : 870 pages
Book Rating : 4.4/5 (715 download)

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Book Synopsis VLSI Fabrication Principles by : Sorab K. Ghandhi

Download or read book VLSI Fabrication Principles written by Sorab K. Ghandhi and published by John Wiley & Sons. This book was released on 1994-03-31 with total page 870 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully updated with the latest technologies, this edition covers thefundamental principles underlying fabrication processes forsemiconductor devices along with integrated circuits made fromsilicon and gallium arsenide. Stresses fabrication criteria forsuch circuits as CMOS, bipolar, MOS, FET, etc. These diversetechnologies are introduced separately and then consolidated intocomplete circuits. An Instructor's Manual presenting detailed solutions to all theproblems in the book is available from the Wiley editorialdepartment.