Optical Characterization of Defects and Impurities in Gallium Nitride

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ISBN 13 :
Total Pages : 206 pages
Book Rating : 4.:/5 (437 download)

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Book Synopsis Optical Characterization of Defects and Impurities in Gallium Nitride by : Erik Earl Reuter

Download or read book Optical Characterization of Defects and Impurities in Gallium Nitride written by Erik Earl Reuter and published by . This book was released on 1999 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Optical Properties of Ion-implanted Impurities in Gallium Nitride

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Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (111 download)

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Book Synopsis Optical Properties of Ion-implanted Impurities in Gallium Nitride by : R D. Metcalfe

Download or read book Optical Properties of Ion-implanted Impurities in Gallium Nitride written by R D. Metcalfe and published by . This book was released on 1976 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:

Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride

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Publisher :
ISBN 13 :
Total Pages : 322 pages
Book Rating : 4.:/5 (35 download)

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Book Synopsis Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride by : Qing Yang (Ph.D.)

Download or read book Spectroscopic Characterization of Radiation-induced Defects in Gallium Nitride written by Qing Yang (Ph.D.) and published by . This book was released on 2005 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy

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Publisher :
ISBN 13 :
Total Pages : 462 pages
Book Rating : 4.:/5 (34 download)

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Book Synopsis Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy by : Robert David Armitage

Download or read book Electrical, Optical, and Defect Properties of Carbon-doped Gallium Nitride Grown by Molecular-beam Epitaxy written by Robert David Armitage and published by . This book was released on 2003 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Properties, Processing and Applications of Gallium Nitride and Related Semiconductors

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Publisher : Institution of Electrical Engineers
ISBN 13 :
Total Pages : 692 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Properties, Processing and Applications of Gallium Nitride and Related Semiconductors by : James H. Edgar

Download or read book Properties, Processing and Applications of Gallium Nitride and Related Semiconductors written by James H. Edgar and published by Institution of Electrical Engineers. This book was released on 1999 with total page 692 pages. Available in PDF, EPUB and Kindle. Book excerpt: Based on its outstanding properties, including a wide energy band gap, high thermal conductivity, and high electron drift velocity, GaN is uniquely suited for many novel devices including solar-blind UV light detectors, high power microwave transistors, and cold cathode electron emitters. This excellent reference covers the basic physical and chemical properties, surveys existing processing technology, and presents summaries of the current state-of-the-art of devices.

Gallium-Nitride (GaN) II

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Publisher : Academic Press
ISBN 13 : 0080864554
Total Pages : 509 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Gallium-Nitride (GaN) II by :

Download or read book Gallium-Nitride (GaN) II written by and published by Academic Press. This book was released on 1998-10-22 with total page 509 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise indeed that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Nonlinear Optics in Semiconductors I

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Publisher : Academic Press
ISBN 13 : 0080864562
Total Pages : 445 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Nonlinear Optics in Semiconductors I by :

Download or read book Nonlinear Optics in Semiconductors I written by and published by Academic Press. This book was released on 1998-10-22 with total page 445 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Technology of Gallium Nitride Crystal Growth

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Publisher : Springer Science & Business Media
ISBN 13 : 3642048307
Total Pages : 337 pages
Book Rating : 4.6/5 (42 download)

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Book Synopsis Technology of Gallium Nitride Crystal Growth by : Dirk Ehrentraut

Download or read book Technology of Gallium Nitride Crystal Growth written by Dirk Ehrentraut and published by Springer Science & Business Media. This book was released on 2010-06-14 with total page 337 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book discusses the important technological aspects of the growth of GaN single crystals by HVPE, MOCVD, ammonothermal and flux methods for the purpose of free-standing GaN wafer production.

Nonlinear Optics in Semiconductors II

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Publisher : Academic Press
ISBN 13 : 0080864570
Total Pages : 351 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Nonlinear Optics in Semiconductors II by :

Download or read book Nonlinear Optics in Semiconductors II written by and published by Academic Press. This book was released on 1998-11-09 with total page 351 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Thin-Film Diamond II

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Publisher : Elsevier
ISBN 13 : 0080541046
Total Pages : 411 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Thin-Film Diamond II by : Christopher Nebel

Download or read book Thin-Film Diamond II written by Christopher Nebel and published by Elsevier. This book was released on 2004-04-19 with total page 411 pages. Available in PDF, EPUB and Kindle. Book excerpt: Part II reviews the state of the art of thin film diamond a very promising new semiconductor that may one day rival silicon as the material of choice for electronics. Diamond has the following important characteristics; it is resistant to radiation damage, chemically inert and biocompatible and it will become "the material" for bio-electronics, in-vivo applications, radiation detectors and high-frequency devices. Thin-Film Diamond II is the first book to summarize state of the art of CVD diamond in depth. It covers the most recent results regarding growth and structural properties, doping and defect characterization, hydrogen in and on diamond as well as surface properties in general, applications of diamond in electrochemistry, as detectors, and in surface acoustic wave devices * Accessible by both experts and non-experts in the field of semi-conductors research and technology, each chapter is written in a tutorial format· * Assisting engineers to manufacture devices with optimized electronic properties· * Truly international, this volume contains chapters written by recognized experts representing academic and industrial institutions from Europe, Japan and the US

Electroluminescence II

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Publisher : Academic Press
ISBN 13 : 0080864635
Total Pages : 281 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Electroluminescence II by :

Download or read book Electroluminescence II written by and published by Academic Press. This book was released on 1999-10-29 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry.

Quantum Efficiency in Complex Systems, Part II: From Molecular Aggregates to Organic Solar Cells

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Publisher : Academic Press
ISBN 13 : 0123910641
Total Pages : 377 pages
Book Rating : 4.1/5 (239 download)

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Book Synopsis Quantum Efficiency in Complex Systems, Part II: From Molecular Aggregates to Organic Solar Cells by :

Download or read book Quantum Efficiency in Complex Systems, Part II: From Molecular Aggregates to Organic Solar Cells written by and published by Academic Press. This book was released on 2011-11-23 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

Advances in Infrared Photodetectors

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Publisher : Elsevier
ISBN 13 : 0123813387
Total Pages : 385 pages
Book Rating : 4.1/5 (238 download)

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Book Synopsis Advances in Infrared Photodetectors by :

Download or read book Advances in Infrared Photodetectors written by and published by Elsevier. This book was released on 2011-05-03 with total page 385 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. Originally widely known as the "Willardson and Beer" Series, it has succeeded in publishing numerous landmark volumes and chapters. The series publishes timely, highly relevant volumes intended for long-term impact and reflecting the truly interdisciplinary nature of the field. The volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry. Written and edited by internationally renowned experts Relevant to a wide readership: physicists, chemists, materials scientists, and device engineers in academia, scientific laboratories and modern industry

Metallic Impurities in Gallium Nitride Grown by Molecular Beam Epitaxy

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Publisher :
ISBN 13 :
Total Pages : 3 pages
Book Rating : 4.:/5 (925 download)

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Book Synopsis Metallic Impurities in Gallium Nitride Grown by Molecular Beam Epitaxy by :

Download or read book Metallic Impurities in Gallium Nitride Grown by Molecular Beam Epitaxy written by and published by . This book was released on 1997 with total page 3 pages. Available in PDF, EPUB and Kindle. Book excerpt: Transition metals are often encountered in trace amounts in semiconductors. They have been extensively studied in most elemental and compound systems, since they form deep donor and/or acceptor levels which usually degrade the electronic and optical material properties. Only very little is known about transition metals in recent III-V semiconducting materials, such as GaN, AlN and InN. These few studies have been done exclusively on Metal-Organic Chemical Vapor Deposition (MOCVD) or Hybrid Vapor Phase Epitaxy HVPE-grown GaN. Preliminary x-ray fluorescence studies at the Advanced Light Source, beamline 10.3.1, Lawrence Berkeley National Laboratory have revealed that GaN materials grown by Molecular Beam Epitaxy (MBE) have Fe, Ni and Cr as the dominant transition metal contaminants. This finding is commensurate with the extremely high concentrations of hydrogen, carbon and oxygen (up to 102° cm{sup -3}) measured by Secondary Ion Mass Spectroscopy (SIMS). Preliminary work using the mapping capabilities of the x-ray fluorescence microprobe revealed the metal impurities were inhomogeneously distributed over the film. Future work of this collaboration will be to find a correlation between the existence of transition metals in MBE films, as revealed by x-ray fluorescence, and Photoluminescence (PL) spectra taken in the infrared region. Also, the authors will make use of the 1 [mu]m spatial resolution of x-ray microprobe to locate the contaminants in relation to structural defects in the GaN films. Because of the large strain caused by the lattice mismatch between the GaN films and the substrates, the films grow in a columnar order with high densities of grain boundaries and dislocations. These structural defects offer preferential sites for metal precipitation or agglomeration which could degrade the optical properties of this material more so than if the impurities were left dissolved in the GaN.

Processing and Properties of Compound Semiconductors

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Publisher : Elsevier
ISBN 13 : 0080541011
Total Pages : 333 pages
Book Rating : 4.0/5 (85 download)

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Download or read book Processing and Properties of Compound Semiconductors written by and published by Elsevier. This book was released on 2001-10-20 with total page 333 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The Willardson and Beer series, as it is widely known, has succeeded in producing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded.

Hydrogen in Semiconductors II

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Publisher : Academic Press
ISBN 13 : 0080525253
Total Pages : 541 pages
Book Rating : 4.0/5 (85 download)

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Book Synopsis Hydrogen in Semiconductors II by :

Download or read book Hydrogen in Semiconductors II written by and published by Academic Press. This book was released on 1999-05-05 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its inception in 1966, the series of numbered volumes known as Semiconductors and Semimetals has distinguished itself through the careful selection of well-known authors, editors, and contributors. The "Willardson and Beer" Series, as it is widely known, has succeeded in publishing numerous landmark volumes and chapters. Not only did many of these volumes make an impact at the time of their publication, but they continue to be well-cited years after their original release. Recently, Professor Eicke R. Weber of the University of California at Berkeley joined as a co-editor of the series. Professor Weber, a well-known expert in the field of semiconductor materials, will further contribute to continuing the series' tradition of publishing timely, highly relevant, and long-impacting volumes. Some of the recent volumes, such as Hydrogen in Semiconductors, Imperfections in III/V Materials, Epitaxial Microstructures, High-Speed Heterostructure Devices, Oxygen in Silicon, and others promise that this tradition will be maintained and even expanded. Reflecting the truly interdisciplinary nature of the field that the series covers, the volumes in Semiconductors and Semimetals have been and will continue to be of great interest to physicists, chemists, materials scientists, and device engineers in modern industry. Provides the most in-depth coverage of hydrogen in silicon available in a single source Includes an extensive chapter on the neutralization of defects in III*b1V semiconductors Combines both experimental and theoretical studies to form a comprehensive reference

Intersubband Transitions in Quantum Wells: Physics and Device Applications II

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Publisher : Academic Press
ISBN 13 : 0080864643
Total Pages : 257 pages
Book Rating : 4.0/5 (88 download)

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Book Synopsis Intersubband Transitions in Quantum Wells: Physics and Device Applications II by :

Download or read book Intersubband Transitions in Quantum Wells: Physics and Device Applications II written by and published by Academic Press. This book was released on 1999-10-25 with total page 257 pages. Available in PDF, EPUB and Kindle. Book excerpt: Intersubband Transitions in Quantum Wells: Physics and Device Applications II