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Author : Christopher Marcos Schnabel
Publisher :
ISBN 13 :
Total Pages : 202 pages
Book Rating : 4.:/5 (452 download)
Download or read book Optical and Electrical Characterization of Silicon Carbide written by Christopher Marcos Schnabel and published by . This book was released on 2000 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Heather C. Crockett
Publisher :
ISBN 13 : 9781423506751
Total Pages : 85 pages
Book Rating : 4.5/5 (67 download)
Download or read book Characterization of the Optical and Electrical Properties of Proton- Irradiated 4H-Silicon Carbide written by Heather C. Crockett and published by . This book was released on 2002-03-01 with total page 85 pages. Available in PDF, EPUB and Kindle. Book excerpt: Epitaxial n-type 4H-silicon carbide (SiC) is irradiated with 2 MeV protons to evaluate the dislocation damage effects on the optical and electrical characteristics of the material. The optical properties of the material are investigated using temperature-dependant photoluminescence (PL) and the effects of proton irradiation on the electrical properties are evaluated using current- voltage measurements and constant-voltage deep level transient spectroscopy (CV- DLTS). Subsequent high-temperature thermal annealing and recovery of the irradiated material is investigated over the temperature range of 900-1500 deg C. Proton-induced irradiation damage is apparent in the 4H-SiC material, affecting both the optical and electrical characteristics of the devices. The radiative behavior of the nitrogen-related near band edge transitions is significantly reduced as a result of the irradiation with partial recovery observed after high-temperature thermal annealing at 1500 deg C. A deeper trapping complex (EC-ET 380 meV) is detected as a result of irradiation and shows signs of activation due to thermal annealing. Initial indications taken from I-V measurements of the Schottky diodes reveal that proton irradiation followed by thermal annealing at 900 deg C may, in fact, enhance the rectifying device characteristics. Increasing the anneal temperature (TA = 1300 deg C) causes the device to fail entirely. Further annealing of the irradiated 4H-SiC at 1500 deg C demonstrates recovery in the rectifying behavior of the material. Significant levels of deep level donor traps are observed, induced by irradiation in n-type material. Three detectable defect pairs emerge with energy levels ranging from 570-730 meV below the conduction band. The trap parameters were determined using curve-fitting algorithms.
Author :
Publisher :
ISBN 13 :
Total Pages : 12 pages
Book Rating : 4.:/5 (227 download)
Download or read book Electrical and Optical Characterization of Silicon Carbide-Polytypes with Respect to High-Field Device Applications written by and published by . This book was released on 1996 with total page 12 pages. Available in PDF, EPUB and Kindle. Book excerpt: With regard to the purpose of this project focusing on the suitability of SiC for high field device applications, material properties like the degree of ionization of different shallow dopants (especially p-type dopants) at device operating temperatures, the possibility of impact ionization of intrinsic and extrinsic energetically deep defect centers as well as the high field carrier mobility of both electrons and holes had to be considered.
Author : Tsunenobu Kimoto
Publisher : John Wiley & Sons
ISBN 13 : 1118313526
Total Pages : 565 pages
Book Rating : 4.1/5 (183 download)
Download or read book Fundamentals of Silicon Carbide Technology written by Tsunenobu Kimoto and published by John Wiley & Sons. This book was released on 2014-11-24 with total page 565 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field. Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are: A complete discussion of SiC material properties, bulk crystal growth, epitaxial growth, device fabrication technology, and characterization techniques. Device physics and operating equations for Schottky diodes, pin diodes, JBS/MPS diodes, JFETs, MOSFETs, BJTs, IGBTs, and thyristors. A survey of power electronics applications, including switch-mode power supplies, motor drives, power converters for electric vehicles, and converters for renewable energy sources. Coverage of special applications, including microwave devices, high-temperature electronics, and rugged sensors. Fully illustrated throughout, the text is written by recognized experts with over 45 years of combined experience in SiC research and development. This book is intended for graduate students and researchers in crystal growth, material science, and semiconductor device technology. The book is also useful for design engineers, application engineers, and product managers in areas such as power supplies, converter and inverter design, electric vehicle technology, high-temperature electronics, sensors, and smart grid technology.
Author : Reinhold Eldor Drews
Publisher :
ISBN 13 :
Total Pages : 390 pages
Book Rating : 4.:/5 (29 download)
Download or read book Electrical and Optical Properties of Silicon Carbide Single-crystals written by Reinhold Eldor Drews and published by . This book was released on 1962 with total page 390 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Stephen E. Lempner
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (315 download)
Download or read book Electrical Characterization of 6H Crystalline Silicon Carbide written by Stephen E. Lempner and published by . This book was released on 1994 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Nitya Nand Singh
Publisher :
ISBN 13 :
Total Pages : 360 pages
Book Rating : 4.:/5 (375 download)
Download or read book Electrical Characterization of Silicon Carbide Semiconductor and SiC-SiO2 Interfaces written by Nitya Nand Singh and published by . This book was released on 1997 with total page 360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Kirk Raphael Osborne
Publisher :
ISBN 13 :
Total Pages : 262 pages
Book Rating : 4.:/5 (3 download)
Download or read book Electrical Characterization of Beta Silicon Carbide written by Kirk Raphael Osborne and published by . This book was released on 1987 with total page 262 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Liang Wang
Publisher :
ISBN 13 :
Total Pages : 130 pages
Book Rating : 4.:/5 (531 download)
Download or read book Optical Characterization of Silicon Carbide written by Liang Wang and published by . This book was released on 2003 with total page 130 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Gary Lynn Harris
Publisher : IET
ISBN 13 : 9780852968703
Total Pages : 312 pages
Book Rating : 4.9/5 (687 download)
Download or read book Properties of Silicon Carbide written by Gary Lynn Harris and published by IET. This book was released on 1995 with total page 312 pages. Available in PDF, EPUB and Kindle. Book excerpt: This well structured and fully indexed book helps to understand and fully characterize the SiC system.
Author : John F. DiGregorio
Publisher :
ISBN 13 :
Total Pages : 340 pages
Book Rating : 4.:/5 (284 download)
Download or read book Optical Characterization of Silicon Carbide and Silicon Carbide Reinforced Composites written by John F. DiGregorio and published by . This book was released on 1993 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Wolfgang J. Choyke
Publisher : Springer Science & Business Media
ISBN 13 : 3642188702
Total Pages : 911 pages
Book Rating : 4.6/5 (421 download)
Download or read book Silicon Carbide written by Wolfgang J. Choyke and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 911 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since the 1997 publication of "Silicon Carbide - A Review of Fundamental Questions and Applications to Current Device Technology" edited by Choyke, et al., there has been impressive progress in both the fundamental and developmental aspects of the SiC field. So there is a growing need to update the scientific community on the important events in research and development since then. The editors have again gathered an outstanding team of the world's leading SiC researchers and design engineers to write on the most recent developments in SiC.
Author : Christian P. Morath (2LT, USAF.)
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (132 download)
Download or read book Electrical Characterization of Ion-implanted 4H-silicon Carbide written by Christian P. Morath (2LT, USAF.) and published by . This book was released on 1999 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Richard Scott Kern
Publisher :
ISBN 13 :
Total Pages : 648 pages
Book Rating : 4.:/5 (349 download)
Download or read book Microstructural and Electrical Characterization of Silicon Carbide and Aluminum Nitride Thin Films Grown by Gas-source Molecular Beam Epitaxy written by Richard Scott Kern and published by . This book was released on 1996 with total page 648 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Fredrik Allerstam
Publisher :
ISBN 13 : 9789173850889
Total Pages : 74 pages
Book Rating : 4.8/5 (58 download)
Download or read book Electrical Characterization of Thermally Oxidized Silicon Carbide written by Fredrik Allerstam and published by . This book was released on 2008 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Michael E. Dunn
Publisher :
ISBN 13 :
Total Pages : 176 pages
Book Rating : 4.:/5 (339 download)
Download or read book Electrical Characterization of 4H-silicon Carbide P-N Junction Diodes written by Michael E. Dunn and published by . This book was released on 1995 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Konstantinos Zekentes
Publisher : Materials Research Forum LLC
ISBN 13 : 1945291842
Total Pages : 250 pages
Book Rating : 4.9/5 (452 download)
Download or read book Advancing Silicon Carbide Electronics Technology I written by Konstantinos Zekentes and published by Materials Research Forum LLC. This book was released on 2018-09-25 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt: The rapidly advancing Silicon Carbide technology has a great potential in high temperature and high frequency electronics. High thermal stability and outstanding chemical inertness make SiC an excellent material for high-power, low-loss semiconductor devices. The present volume presents the state of the art of SiC device fabrication and characterization. Topics covered include: SiC surface cleaning and etching techniques; electrical characterization methods and processing of ohmic contacts to silicon carbide; analysis of contact resistivity dependence on material properties; limitations and accuracy of contact resistivity measurements; ohmic contact fabrication and test structure design; overview of different metallization schemes and processing technologies; thermal stability of ohmic contacts to SiC, their protection and compatibility with device processing; Schottky contacts to SiC; Schottky barrier formation; Schottky barrier inhomogeneity in SiC materials; technology and design of 4H-SiC Schottky and Junction Barrier Schottky diodes; Si/SiC heterojunction diodes; applications of SiC Schottky diodes in power electronics and temperature/light sensors; high power SiC unipolar and bipolar switching devices; different types of SiC devices including material and technology constraints on device performance; applications in the area of metal contacts to silicon carbide; status and prospects of SiC power devices.
