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Operation And Modeling Of The Mos Transistor
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Book Synopsis Classical and Object-oriented Software Engineering with UML and C++ by : Stephen R. Schach
Download or read book Classical and Object-oriented Software Engineering with UML and C++ written by Stephen R. Schach and published by McGraw-Hill Companies. This book was released on 1999 with total page 658 pages. Available in PDF, EPUB and Kindle. Book excerpt: The Universal Modeling Language (UML) has become an industry standard in software engineering. In this text, it is used for object-oriented analysis and design as well as when diagrams depict objects and their interrelationships.
Book Synopsis Operation and Modeling of the MOS Transistor by : Yannis Tsividis
Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by . This book was released on 2011 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The MOS (Metal Oxide Semiconductor) transistor is the most important building block of modern silicon integrated circuits. This book fills an important gap in the literature by presenting a unified treatment of the operation and modeling of the MOS transistor that is complemented withextensive intuitive discussions.The MOS transistor is the dominant VLSI (Very Large Scale Integration) device, and understanding of this device is mandatory for those people planning a career in device physics and modeling as well as in circuit design. Especially important for university courses,there is a logical, systematic and progressive description that starts with semiconductor fundamentals and builds up to a comprehensive understanding of the basics of MOS transistors. For practicing professionals there are details of nuances observed in MOS transistor behavior, and variousapproaches to modeling these are presented. Detailed derivations are given for modeling dc currents, charges for large-signal operation, small-signal operation at low frequencies and high frequencies, and noise.
Author :Charles Batchelor Professor of Electrical Engineering Yannis Tsividis Publisher : ISBN 13 :9780199733774 Total Pages :248 pages Book Rating :4.7/5 (337 download)
Book Synopsis Instructor's Solution Manaul for Operation and Modeling of the Mo 3rd Ed by : Charles Batchelor Professor of Electrical Engineering Yannis Tsividis
Download or read book Instructor's Solution Manaul for Operation and Modeling of the Mo 3rd Ed written by Charles Batchelor Professor of Electrical Engineering Yannis Tsividis and published by . This book was released on 2010-12-14 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Operation and Modeling of the MOS Transistor by : Yannis Tsividis
Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by Oxford University Press, USA. This book was released on 1999 with total page 620 pages. Available in PDF, EPUB and Kindle. Book excerpt: Extensively revised and updated, this, the second edition of the highly praised text Operation and Modeling of The MOS Transistor, has become a standard in academia and industry. The book provides a thorough treatment of the MOS transistor-the key element of most modern microelectronic chips. KEY FEATURES .Unified, careful treatment. The book covers in depth the development of many important models, ranging from the simple to the sophisticated, with the connection between models clearly identified. Many aspects of modeling are covered, including: dc, ac, small-signal, large-signal transient, quasi-static, nonquasi-static, and noise. .Expanded coverage. New material is included on a number of topics, including charge sheet models, small-dimension effects, noise, and modeling for RF applications. .New chapter on modeling for CAD. A completely new chapter discusses the context, considerations, and pitfalls associated with the development of models for computer-aided design, and describes ways to evaluate them. .Extensive Bibliography. A thoroughly updated, greatly expanded bibliography is provided."
Book Synopsis Charge-Based MOS Transistor Modeling by : Christian C. Enz
Download or read book Charge-Based MOS Transistor Modeling written by Christian C. Enz and published by John Wiley & Sons. This book was released on 2006-08-14 with total page 328 pages. Available in PDF, EPUB and Kindle. Book excerpt: Modern, large-scale analog integrated circuits (ICs) are essentially composed of metal-oxide semiconductor (MOS) transistors and their interconnections. As technology scales down to deep sub-micron dimensions and supply voltage decreases to reduce power consumption, these complex analog circuits are even more dependent on the exact behavior of each transistor. High-performance analog circuit design requires a very detailed model of the transistor, describing accurately its static and dynamic behaviors, its noise and matching limitations and its temperature variations. The charge-based EKV (Enz-Krummenacher-Vittoz) MOS transistor model for IC design has been developed to provide a clear understanding of the device properties, without the use of complicated equations. All the static, dynamic, noise, non-quasi-static models are completely described in terms of the inversion charge at the source and at the drain taking advantage of the symmetry of the device. Thanks to its hierarchical structure, the model offers several coherent description levels, from basic hand calculation equations to complete computer simulation model. It is also compact, with a minimum number of process-dependant device parameters. Written by its developers, this book provides a comprehensive treatment of the EKV charge-based model of the MOS transistor for the design and simulation of low-power analog and RF ICs. Clearly split into three parts, the authors systematically examine: the basic long-channel intrinsic charge-based model, including all the fundamental aspects of the EKV MOST model such as the basic large-signal static model, the noise model, and a discussion of temperature effects and matching properties; the extended charge-based model, presenting important information for understanding the operation of deep-submicron devices; the high-frequency model, setting out a complete MOS transistor model required for designing RF CMOS integrated circuits. Practising engineers and circuit designers in the semiconductor device and electronics systems industry will find this book a valuable guide to the modelling of MOS transistors for integrated circuits. It is also a useful reference for advanced students in electrical and computer engineering.
Book Synopsis Operation and Modeling of the MOS Transistor, Solution Manual by : Yannis Tsividis
Download or read book Operation and Modeling of the MOS Transistor, Solution Manual written by Yannis Tsividis and published by . This book was released on 2012-08-23 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mosfet Modeling for VLSI Simulation by : Narain Arora
Download or read book Mosfet Modeling for VLSI Simulation written by Narain Arora and published by World Scientific. This book was released on 2007-02-14 with total page 632 pages. Available in PDF, EPUB and Kindle. Book excerpt: ' A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today''s (1993) MOS VLSI technology. The assumptions used to arrive at the models are emphasized so that the accuracy of the models in describing the device characteristics are clearly understood. Due to the importance of designing reliable circuits, device reliability models are also covered. Understanding these models is essential when designing circuits for state-of-the-art MOS ICs. Contents: OverviewReview of Basic Semiconductor and pn Junction TheoryMOS Transistor Structure and OperationMOS CapacitorThreshold VoltageMOSFET DC ModelDynamic ModelModeling Hot-Carrier EffectsData Acquisition and Model Parameter MeasurementsModel Parameter Extraction Using Optimization MethodSPICE Diode and MOSFET Models and Their ParametersStatistical Modeling and Worst-Case Design Parameters Readership: Integrated circuit chip designers, device model developers and circuit simulators. '
Book Synopsis Mosfet Modeling for Circuit Analysis and Design by :
Download or read book Mosfet Modeling for Circuit Analysis and Design written by and published by . This book was released on with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Operation and Modeling of the MOS Transistor by : Yannis Tsividis
Download or read book Operation and Modeling of the MOS Transistor written by Yannis Tsividis and published by OUP USA. This book was released on 2013-03-14 with total page 736 pages. Available in PDF, EPUB and Kindle. Book excerpt: Operation and Modeling of the MOS Transistor has become a standard in academia and industry. Extensively revised and updated, the third edition of this highly acclaimed text provides a thorough treatment of the MOS transistor—the key element of modern microelectronic chips.
Book Synopsis Technology Computer Aided Design by : Chandan Kumar Sarkar
Download or read book Technology Computer Aided Design written by Chandan Kumar Sarkar and published by CRC Press. This book was released on 2018-09-03 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Responding to recent developments and a growing VLSI circuit manufacturing market, Technology Computer Aided Design: Simulation for VLSI MOSFET examines advanced MOSFET processes and devices through TCAD numerical simulations. The book provides a balanced summary of TCAD and MOSFET basic concepts, equations, physics, and new technologies related to TCAD and MOSFET. A firm grasp of these concepts allows for the design of better models, thus streamlining the design process, saving time and money. This book places emphasis on the importance of modeling and simulations of VLSI MOS transistors and TCAD software. Providing background concepts involved in the TCAD simulation of MOSFET devices, it presents concepts in a simplified manner, frequently using comparisons to everyday-life experiences. The book then explains concepts in depth, with required mathematics and program code. This book also details the classical semiconductor physics for understanding the principle of operations for VLSI MOS transistors, illustrates recent developments in the area of MOSFET and other electronic devices, and analyzes the evolution of the role of modeling and simulation of MOSFET. It also provides exposure to the two most commercially popular TCAD simulation tools Silvaco and Sentaurus. • Emphasizes the need for TCAD simulation to be included within VLSI design flow for nano-scale integrated circuits • Introduces the advantages of TCAD simulations for device and process technology characterization • Presents the fundamental physics and mathematics incorporated in the TCAD tools • Includes popular commercial TCAD simulation tools (Silvaco and Sentaurus) • Provides characterization of performances of VLSI MOSFETs through TCAD tools • Offers familiarization to compact modeling for VLSI circuit simulation R&D cost and time for electronic product development is drastically reduced by taking advantage of TCAD tools, making it indispensable for modern VLSI device technologies. They provide a means to characterize the MOS transistors and improve the VLSI circuit simulation procedure. The comprehensive information and systematic approach to design, characterization, fabrication, and computation of VLSI MOS transistor through TCAD tools presented in this book provides a thorough foundation for the development of models that simplify the design verification process and make it cost effective.
Book Synopsis CMOS Analog Design Using All-Region MOSFET Modeling by : Márcio Cherem Schneider
Download or read book CMOS Analog Design Using All-Region MOSFET Modeling written by Márcio Cherem Schneider and published by Cambridge University Press. This book was released on 2010-01-28 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: The essentials of analog circuit design with a unique all-region MOSFET modeling approach.
Book Synopsis MOSFET Models for VLSI Circuit Simulation by : Narain D. Arora
Download or read book MOSFET Models for VLSI Circuit Simulation written by Narain D. Arora and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 628 pages. Available in PDF, EPUB and Kindle. Book excerpt: Metal Oxide Semiconductor (MOS) transistors are the basic building block ofMOS integrated circuits (I C). Very Large Scale Integrated (VLSI) circuits using MOS technology have emerged as the dominant technology in the semiconductor industry. Over the past decade, the complexity of MOS IC's has increased at an astonishing rate. This is realized mainly through the reduction of MOS transistor dimensions in addition to the improvements in processing. Today VLSI circuits with over 3 million transistors on a chip, with effective or electrical channel lengths of 0. 5 microns, are in volume production. Designing such complex chips is virtually impossible without simulation tools which help to predict circuit behavior before actual circuits are fabricated. However, the utility of simulators as a tool for the design and analysis of circuits depends on the adequacy of the device models used in the simulator. This problem is further aggravated by the technology trend towards smaller and smaller device dimensions which increases the complexity of the models. There is extensive literature available on modeling these short channel devices. However, there is a lot of confusion too. Often it is not clear what model to use and which model parameter values are important and how to determine them. After working over 15 years in the field of semiconductor device modeling, I have felt the need for a book which can fill the gap between the theory and the practice of MOS transistor modeling. This book is an attempt in that direction.
Book Synopsis Fundamentals of Modern VLSI Devices by : Yuan Taur
Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.
Book Synopsis Transistor Level Modeling for Analog/RF IC Design by : Wladyslaw Grabinski
Download or read book Transistor Level Modeling for Analog/RF IC Design written by Wladyslaw Grabinski and published by Springer Science & Business Media. This book was released on 2006-07-01 with total page 298 pages. Available in PDF, EPUB and Kindle. Book excerpt: The editors and authors present a wealth of knowledge regarding the most relevant aspects in the field of MOS transistor modeling. The variety of subjects and the high quality of content of this volume make it a reference document for researchers and users of MOSFET devices and models. The book can be recommended to everyone who is involved in compact model developments, numerical TCAD modeling, parameter extraction, space-level simulation or model standardization. The book will appeal equally to PhD students who want to understand the ins and outs of MOSFETs as well as to modeling designers working in the analog and high-frequency areas.
Book Synopsis Mixed Analog-digital VLSI Devices and Technology by : Yannis Tsividis
Download or read book Mixed Analog-digital VLSI Devices and Technology written by Yannis Tsividis and published by World Scientific. This book was released on 2002 with total page 300 pages. Available in PDF, EPUB and Kindle. Book excerpt: Improve your circuit-design potential with this expert guide to the devices and technology used in mixed analog-digital VLSI chips for such high-volume applications as hard-disk drives, wireless telephones, and consumer electronics. The book provides you with a critical understanding of device models, fabrication technology, and layout as they apply to mixed analog-digital circuits.You will learn about the many device-modeling requirements for analog work, as well as the pitfalls in models used today for computer simulators such as Spice. Also included is information on fabrication technologies developed specifically for mixed-signal VLSI chips, plus guidance on the layout of mixed analog-digital chips for a high degree of analog-device matching and minimum digital-to-analog interference.This reference book features an intuitive introduction to MOSFET operation that will enable you to view with insight any MOSFET model ? besides thorough discussions on valuable large-signal and small-signal models.Filled with practical information, this first-of-its-kind book will help you grasp the nuances of mixed-signal VLSI-device models and layout that are crucial to the design of high-performance chips.
Book Synopsis Designing Network On-Chip Architectures in the Nanoscale Era by : Jose Flich
Download or read book Designing Network On-Chip Architectures in the Nanoscale Era written by Jose Flich and published by CRC Press. This book was released on 2010-12-18 with total page 515 pages. Available in PDF, EPUB and Kindle. Book excerpt: Going beyond isolated research ideas and design experiences, Designing Network On-Chip Architectures in the Nanoscale Era covers the foundations and design methods of network on-chip (NoC) technology. The contributors draw on their own lessons learned to provide strong practical guidance on various design issues.Exploring the design process of the
Book Synopsis MOSFET Modeling & BSIM3 User’s Guide by : Yuhua Cheng
Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 462 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.
