OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces

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ISBN 13 :
Total Pages : 808 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces by : David Todd Emerson

Download or read book OMVPE Synthesis and Characterization of Heterostructures Containing Arsenide/phosphide Interfaces written by David Todd Emerson and published by . This book was released on 1997 with total page 808 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors

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ISBN 13 :
Total Pages : 790 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors by : Eduardo Martin Chumbes

Download or read book Novel Gallium Nitride Based Microwave Noise and Power Heterostructure Field Effect Transistors written by Eduardo Martin Chumbes and published by . This book was released on 2001 with total page 790 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Chemical Abstracts

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ISBN 13 :
Total Pages : 2540 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Chemical Abstracts by :

Download or read book Chemical Abstracts written by and published by . This book was released on 2002 with total page 2540 pages. Available in PDF, EPUB and Kindle. Book excerpt:

High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy

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ISBN 13 :
Total Pages : 548 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy by : Joseph Allen Smart

Download or read book High Electron Mobility Transistor Structures in the Gallium Arsenide and Gallium Nitride Material Systems by Organometallic Vapor Phase Epitaxy written by Joseph Allen Smart and published by . This book was released on 2006 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Organometallic Vapor-Phase Epitaxy

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Publisher : Elsevier
ISBN 13 : 0323139175
Total Pages : 417 pages
Book Rating : 4.3/5 (231 download)

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Book Synopsis Organometallic Vapor-Phase Epitaxy by : Gerald B. Stringfellow

Download or read book Organometallic Vapor-Phase Epitaxy written by Gerald B. Stringfellow and published by Elsevier. This book was released on 2012-12-02 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Here is one of the first single-author treatments of organometallic vapor-phase epitaxy (OMVPE)--a leading technique for the fabrication of semiconductor materials and devices. Also included are metal-organic molecular-beam epitaxy (MOMBE) and chemical-beam epitaxy (CBE) ultra-high-vacuum deposition techniques using organometallic source molecules. Of interest to researchers, students, and people in the semiconductor industry, this book provides a basic foundation for understanding the technique and the application of OMVPE for the growth of both III-V and II-VI semiconductor materials and the special structures required for device applications. In addition, a comprehensive summary detailing the OMVPE results observed to date in a wide range of III-V and II-VI semiconductors is provided. This includes a comparison of results obtained through the use of other epitaxial techniques such as molecular beam epitaxy (MBE), liquid-phase epitaxy (LPE), and vapor phase epitaxy using halide transport.

Scientific and Technical Aerospace Reports

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ISBN 13 :
Total Pages : 836 pages
Book Rating : 4.:/5 (31 download)

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Book Synopsis Scientific and Technical Aerospace Reports by :

Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1994 with total page 836 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Engineering Index Annual

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ISBN 13 :
Total Pages : 2264 pages
Book Rating : 4.:/5 (319 download)

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Book Synopsis The Engineering Index Annual by :

Download or read book The Engineering Index Annual written by and published by . This book was released on 1992 with total page 2264 pages. Available in PDF, EPUB and Kindle. Book excerpt: Since its creation in 1884, Engineering Index has covered virtually every major engineering innovation from around the world. It serves as the historical record of virtually every major engineering innovation of the 20th century. Recent content is a vital resource for current awareness, new production information, technological forecasting and competitive intelligence. The world?s most comprehensive interdisciplinary engineering database, Engineering Index contains over 10.7 million records. Each year, over 500,000 new abstracts are added from over 5,000 scholarly journals, trade magazines, and conference proceedings. Coverage spans over 175 engineering disciplines from over 80 countries. Updated weekly.

Physics Briefs

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ISBN 13 :
Total Pages : 1420 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Physics Briefs by :

Download or read book Physics Briefs written by and published by . This book was released on 1993 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Heteroepitaxy of Semiconductors

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Publisher : CRC Press
ISBN 13 : 1315355175
Total Pages : 794 pages
Book Rating : 4.3/5 (153 download)

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Book Synopsis Heteroepitaxy of Semiconductors by : John E. Ayers

Download or read book Heteroepitaxy of Semiconductors written by John E. Ayers and published by CRC Press. This book was released on 2016-10-03 with total page 794 pages. Available in PDF, EPUB and Kindle. Book excerpt: In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.

Advances in III-V Semiconductor Nanowires and Nanodevices

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ISBN 13 : 9781608054152
Total Pages : 188 pages
Book Rating : 4.0/5 (541 download)

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Book Synopsis Advances in III-V Semiconductor Nanowires and Nanodevices by : Jianye Li

Download or read book Advances in III-V Semiconductor Nanowires and Nanodevices written by Jianye Li and published by . This book was released on 2018-02-15 with total page 188 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductor nanowires exhibit novel electronic and optical properties due to their unique one-dimensional structure and quantum confinement effects. In particular, III-V semiconductor nanowires have been of great scientific and technological interest for next generation optoelectronic devices including transistors, light emitting diodes, lasers, photodetectors, and solar cells. Advances in III-V Semiconductor Nanowires and Nanodevicesis an account of recent progress in the synthesis, characterization, physical properties, device fabrication, and applications of binary compound and ternary alloy III-V semiconductor nanowires. Each chapter is prepared by renowned experts in the field, describing the current state of knowledge and key areas of research. The book is written at the expert level, but also serves as a guide for researchers or graduate students aiming to enter semiconductor research.

Defects in Self-Catalysed III-V Nanowires

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Publisher : Springer Nature
ISBN 13 : 3030940624
Total Pages : 158 pages
Book Rating : 4.0/5 (39 download)

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Book Synopsis Defects in Self-Catalysed III-V Nanowires by : James A. Gott

Download or read book Defects in Self-Catalysed III-V Nanowires written by James A. Gott and published by Springer Nature. This book was released on 2022-01-28 with total page 158 pages. Available in PDF, EPUB and Kindle. Book excerpt: This thesis presents an in-depth exploration of imperfections that can be found in self-catalysed III-V semiconductor nanowires. By utilising advanced electron microscopy techniques, the interface sharpness and defects at the atomic and macroscopic scale are analysed. It is found that a surprising variety and quantity of defect structures can exist in nanowire systems, and that they can in fact host some never-before-seen defect configurations. To probe how these defects are formed, conditions during nanowire growth can be emulated inside the microscope using the latest generation of in-situ heating holder. This allowed the examination of defect formation, dynamics, and removal, revealing that many of the defects can in fact be eliminated. This information is critical for attaining perfect nanowire growth. The author presents annealing strategies to improve crystal quality, and therefore device performance.

Electrical & Electronics Abstracts

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ISBN 13 :
Total Pages : 1904 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Electrical & Electronics Abstracts by :

Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1904 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Metalorganic Vapor Phase Epitaxy (MOVPE)

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Publisher : John Wiley & Sons
ISBN 13 : 1119313015
Total Pages : 582 pages
Book Rating : 4.1/5 (193 download)

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Book Synopsis Metalorganic Vapor Phase Epitaxy (MOVPE) by : Stuart Irvine

Download or read book Metalorganic Vapor Phase Epitaxy (MOVPE) written by Stuart Irvine and published by John Wiley & Sons. This book was released on 2019-10-07 with total page 582 pages. Available in PDF, EPUB and Kindle. Book excerpt: Systematically discusses the growth method, material properties, and applications for key semiconductor materials MOVPE is a chemical vapor deposition technique that produces single or polycrystalline thin films. As one of the key epitaxial growth technologies, it produces layers that form the basis of many optoelectronic components including mobile phone components (GaAs), semiconductor lasers and LEDs (III-Vs, nitrides), optical communications (oxides), infrared detectors, photovoltaics (II-IV materials), etc. Featuring contributions by an international group of academics and industrialists, this book looks at the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring. It covers the most important materials from III-V and II-VI compounds to quantum dots and nanowires, including sulfides and selenides and oxides/ceramics. Sections in every chapter of Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications cover the growth of the particular materials system, the properties of the resultant material, and its applications. The book offers information on arsenides, phosphides, and antimonides; nitrides; lattice-mismatched growth; CdTe, MCT (mercury cadmium telluride); ZnO and related materials; equipment and safety; and more. It also offers a chapter that looks at the future of the technique. Covers, in order, the growth method, material properties, and applications for each material Includes chapters on the fundamentals of MOVPE and the key areas of equipment/safety, precursor chemicals, and growth monitoring Looks at important materials such as III-V and II-VI compounds, quantum dots, and nanowires Provides topical and wide-ranging coverage from well-known authors in the field Part of the Materials for Electronic and Optoelectronic Applications series Metalorganic Vapor Phase Epitaxy (MOVPE): Growth, Materials Properties and Applications is an excellent book for graduate students, researchers in academia and industry, as well as specialist courses at undergraduate/postgraduate level in the area of epitaxial growth (MOVPE/ MOCVD/ MBE).

Dissertation Abstracts International

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ISBN 13 :
Total Pages : 780 pages
Book Rating : 4.F/5 ( download)

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Download or read book Dissertation Abstracts International written by and published by . This book was released on 1996 with total page 780 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Ceramic Abstracts

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ISBN 13 :
Total Pages : 1040 pages
Book Rating : 4.E/5 ( download)

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Download or read book Ceramic Abstracts written by and published by . This book was released on 1998 with total page 1040 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Handbook of Crystal Growth

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Publisher : Elsevier
ISBN 13 : 0444633065
Total Pages : 1420 pages
Book Rating : 4.4/5 (446 download)

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Book Synopsis Handbook of Crystal Growth by : Peter Rudolph

Download or read book Handbook of Crystal Growth written by Peter Rudolph and published by Elsevier. This book was released on 2014-11-04 with total page 1420 pages. Available in PDF, EPUB and Kindle. Book excerpt: Vol 2A: Basic TechnologiesHandbook of Crystal Growth, Second Edition Volume IIA (Basic Technologies) presents basic growth technologies and modern crystal cutting methods. Particularly, the methodical fundamentals and development of technology in the field of bulk crystallization on both industrial and research scales are explored. After an introductory chapter on the formation of minerals, ruling historically the basic crystal formation parameters, advanced basic technologies from melt, solution, and vapour being applied for research and production of the today most important materials, like silicon, semiconductor compounds and oxides are presented in detail. The interdisciplinary and general importance of crystal growth for human live are illustrated.Vol 2B: Growth Mechanisms and DynamicsHandbook of Crystal Growth, Second Edition Volume IIB (Growth Mechanisms and Dynamics) deals with characteristic mechanisms and dynamics accompanying each bulk crystal growth method discussed in Volume IIA. Before the atoms or molecules pass over from a position in the fluid medium (gas, melt or solution) to their place in the crystalline face they must be transported in the fluid over macroscopic distances by diffusion, buoyancy-driven convection, surface-tension-driven convection, and forced convection (rotation, acceleration, vibration, magnetic mixing). Further, the heat of fusion and the part carried by the species on their way to the crystal by conductive and convective transport must be dissipated in the solid phase by well-organized thermal conduction and radiation to maintain a stable propagating interface. Additionally, segregation and capillary phenomena play a decisional role for chemical composition and crystal shaping, respectively. Today, the increase of high-quality crystal yield, its size enlargement and reproducibility are imperative conditions to match the strong economy. Volume 2A Presents the status and future of Czochralski and float zone growth of dislocation-free silicon Examines directional solidification of silicon ingots for photovoltaics, vertical gradient freeze of GaAs, CdTe for HF electronics and IR imaging as well as antiferromagnetic compounds and super alloys for turbine blades Focuses on growth of dielectric and conducting oxide crystals for lasers and non-linear optics Topics on hydrothermal, flux and vapour phase growth of III-nitrides, silicon carbide and diamond are explored Volume 2B Explores capillarity control of the crystal shape at the growth from the melt Highlights modeling of heat and mass transport dynamics Discusses control of convective melt processes by magnetic fields and vibration measures Includes imperative information on the segregation phenomenon and validation of compositional homogeneity Examines crystal defect generation mechanisms and their controllability Illustrates proper automation modes for ensuring constant crystal growth process Exhibits fundamentals of solution growth, gel growth of protein crystals, growth of superconductor materials and mass crystallization for food and pharmaceutical industries

International Aerospace Abstracts

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ISBN 13 :
Total Pages : 932 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1989 with total page 932 pages. Available in PDF, EPUB and Kindle. Book excerpt: