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Author : Douglas B. Ingerly
Publisher :
ISBN 13 :
Total Pages : 294 pages
Book Rating : 4.:/5 (89 download)
Download or read book Ohmic Contacts to GaN written by Douglas B. Ingerly and published by . This book was released on 2000 with total page 294 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Terry Michael Ake
Publisher :
ISBN 13 :
Total Pages : 136 pages
Book Rating : 4.:/5 (419 download)
Download or read book Ohmic Contacts on GaN written by Terry Michael Ake and published by . This book was released on 1999 with total page 136 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Yun-Li Li
Publisher :
ISBN 13 :
Total Pages : 114 pages
Book Rating : 4.:/5 (477 download)
Download or read book Low-resistance Ohmic Contacts to P-type GaN and P-type AlGaN/GaN Superlattices written by Yun-Li Li and published by . This book was released on 2000 with total page 114 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : John Yan
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (89 download)
Download or read book Processing and Characterisation of Ohmic Contacts to GaN. written by John Yan and published by . This book was released on 2005 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Lars Fredrik Voss
Publisher :
ISBN 13 :
Total Pages : pages
Book Rating : 4.:/5 (664 download)
Download or read book Thermally Stable Ohmic and Schottky Contacts to GaN written by Lars Fredrik Voss and published by . This book was released on 2008 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: ABSTRACT: This dissertation is focused on the development of Ohmic and Schottky contacts to both nand p-type Gallium Nitride for use in microelectronic and optical devices. The goal is to develop low resistance contacts with greater thermal budgets and superior thermal aging characteristics to those commonly in use today as well as to understand the mechanisms by which these contacts may fail. In addition, p-type Ohmic contacts have been used to fabricate light emitting diodes (LEDs) which display far superior aging properties than those made with conventional Ni/Au contacts. Ohmic contacts to p-GaN were fabricated using a variety of refractory materials. The materials examined were of three basic types: boride, nitride, and the refractory metal Ir. The boride family includes W2B, W2B5, CrB2, ZrB2, and TiB2. The nitrides examined were TaN, TiN, and ZrN. Contacts based on these materials were fabricated using either a GaN//Ni/Au/X/Ti/Au, GaN//X/Ti/Au, or GaN//Ni/X/Au scheme, where X is the refractory material. Contact resistances as low as ~1 x 10-4 ohm/cm2 were consistently achieved after annealing at temperatures from 500-1000°C for 60 s in N2 using these materials for p-GaN with a carrier concentration of ~1 x 1017 cm-3.
Author : Michael Shur
Publisher : World Scientific
ISBN 13 : 9789812562364
Total Pages : 310 pages
Book Rating : 4.5/5 (623 download)
Download or read book GaN-based Materials and Devices written by Michael Shur and published by World Scientific. This book was released on 2004 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: The unique materials properties of GaN-based semiconductors havestimulated a great deal of interest in research and developmentregarding nitride materials growth and optoelectronic andnitride-based electronic devices. High electron mobility andsaturation velocity, high sheet carrier concentration atheterojunction interfaces, high breakdown field, and low thermalimpedance of GaN-based films grown over SiC or bulk AlN substratesmake nitride-based electronic devices very promising.
Author :
Publisher :
ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (455 download)
Download or read book Theoretical and Experimental Approach to Developing Improved Electrical Contacts to GaN. written by and published by . This book was released on 1999 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The metallurgy and electrical performance of contacts to GaN were examined. Thermodynamic estimates coupled with experimental work revealed clear trends in the nature of the contact metallurgy depending upon the position of the metal in the periodic table. This information was then used to aid in the investigation and design of electrical contacts to GaN. Ohmic contacts to n-GaN, Schottky barriers to n-GaN, and ohmic contacts to p-GaN were fabricated and characterized. These studies resulted in an improved understanding of the mechanism of ohmic contact formation in Al/Ti/n-GaN contacts, along with the development of TiN/Ti/n-GaN and ZrN/Zr/n-GaN ohmic contacts with exceptional thermal stability at 600 deg C and contact resistivities of 6 x 10(exp -6) and 2 x 10(exp -5) ohm.sq cm, respectively, for n = 7 x 10(exp 17) cu cm. Also developed were Re/n-GaN Schottky barrier contacts that were stable upon annealing at 700 deg C with current-voltage and capacitance-voltage barrier heights of 0.82 and 1.06 eV, respectively. For ohmic contacts to p-GaN, a large number of contacts were evaluated. A clear improvement over conventional Au/Ni/p-GaN contacts was provided by electrodeposited Pt/p-GaN and sputtered Pt/Ni/p-GaN contacts, which provided contact resistivities that were lower than Au/Ni/p-GaN contacts by more than a factor of two. An explanation for this improvement was formulated.
![Download Low Resistance Ohmic Contacts to P-type GaN on Semipolar [11 - 22] and Nonpolar [10 - 10] PDF Online Free](https://books.google.com/books/content/images/frontcover/PQZCQwAACAAJ?fife=w200-h370)
Author : Hsun Chih Kuo
Publisher :
ISBN 13 :
Total Pages : 168 pages
Book Rating : 4.:/5 (472 download)
Download or read book Low Resistance Ohmic Contacts to P-type GaN on Semipolar [11 - 22] and Nonpolar [10 - 10] written by Hsun Chih Kuo and published by . This book was released on 2009 with total page 168 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Huichan Seo
Publisher :
ISBN 13 :
Total Pages : 292 pages
Book Rating : 4.:/5 (816 download)
Download or read book Investigation of Ohmic Contacts for GaN-based Power Electronic Devices Using Molecular Beam Epitaxy written by Huichan Seo and published by . This book was released on 2008 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : William Patrick Lewis
Publisher :
ISBN 13 :
Total Pages : 149 pages
Book Rating : 4.:/5 (795 download)
Download or read book An Analysis of Metal Contacts to GaN written by William Patrick Lewis and published by . This book was released on 2007 with total page 149 pages. Available in PDF, EPUB and Kindle. Book excerpt: Ohmic and Schottky contacts to GaN on sapphire and free standing GaN are investigated. A detailed analysis of the circular Transmission Line Mea-surement (c-TLM) technique is carried out. We show the need to accurately measure the contact radii to extract accurate contact resistivity values, _c using c-TLM, for contacts to p-type GaN. Small measurement errors, _ 0.5 _m, lead to large errors in _c, especially as _c decreases. An alternative technique to extract _c, based on the series resistance of a p-n diode, is investigated. This method relies on uniform current density over the whole metal{semiconductor diode contact and the existence of a singular diode ideality. Defects in p-type GaN on LED material are shown to electroplate preferentially. Ni plated defects annealed in an O2 atmosphere are shown to be passivated, with signi_cant measured improvements in the I{V and L{I char- acteristics of LEDs. Electroless deposition is explored as an alternative contact formation technique. This novel approach yields Ni/Au, p-type ohmic contacts, with a _c comparable with evaporated contacts. A _c of 2.2 x 10_2 cm_2 at room temperature and a _c of 2.5 x 10_2 cm_2 at 410 K indicate the tunneling nature of the contact. The method provides for a reduction in the cost and processing time associated with ohmic contact formation. CoW contacts to n-type GaN are shown to be rectifying even after a 6500C anneal. KOH etching of Ga-face, freestanding, n-type, GaN, is shown to aid ohmic contact formation and remove the need for a high temperature anneal. Schottky contacts were optimised on low doped epi-layers, on free standing n-GaN substrates. The contacts are governed by thermionic emission, with low ideality, 1.04 and low on-state resistance, 0.57 mcm2. The idealities of the devices are shown to decrease with increasing temperature, while the barrier heights remain relatively constant. KOH treatments of the material were shown to increase the Schottky barrier height and reduce reverse leakage currents.
Author : Hugh O. Pierson
Publisher : William Andrew
ISBN 13 : 081551770X
Total Pages : 363 pages
Book Rating : 4.8/5 (155 download)
Download or read book Handbook of Refractory Carbides & Nitrides written by Hugh O. Pierson and published by William Andrew. This book was released on 1996-12-31 with total page 363 pages. Available in PDF, EPUB and Kindle. Book excerpt: Refractory carbides and nitrides are useful materials with numerous industrial applications and a promising future, in addition to being materials of great interest to the scientific community. Although most of their applications are recent, the refractory carbides and nitrides have been known for over one hundred years. The industrial importance of the refractory carbides and nitrides is growing rapidly, not only in the traditional and well-established applications based on the strength and refractory nature of these materials such as cutting tools and abrasives, but also in new and promising fields such as electronics and optoelectronics.
![Download High Temperature Stable W and WSi[x] Ohmic Contacts on GaN and InGaN. PDF Online Free](https://books.google.com/books/content/images/frontcover/oz3uoAEACAAJ?fife=w200-h370)
Download or read book High Temperature Stable W and WSi[x] Ohmic Contacts on GaN and InGaN. written by and published by . This book was released on 1996 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Ohmic Contacts to Si-implanted and Un-implanted N-type GaN. written by and published by . This book was released on 2001 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: We report on ohmic contacts to Si-implanted and un-implanted n-type GaN on sapphire. A ring shaped contact design avoids the need to isolate the contact structures by additional implantation or etching. Metal layers of Al and Ti/Al were investigated. On un-implanted GaN, post metalization annealing was performed in an RTA for 30 seconds in N[sub 2] at 700, 800, and 900 C.A minimum specific contact resistance (r[sub c]) of 1.4[times]10[sup -5][Omega][minus]cm[sup 2] was measured for Ti/Al at an annealing temperature of 800 C. Although these values are reasonably low, variations of 95% in specific contact resistance were measured within a 500[mu]m distance on the wafer. These results are most likely caused by the presence of compensating hydrogen. Specific contact resistance variation was reduced from 95 to 10% by annealing at 900 C prior to metalization. On Si-implanted GaN, un-annealed ohmic contacts were formed with Ti/Al metalization. The implant activation anneal of 1120 C generates nitrogen vacancies that leave the surface heavily n-type, which makes un-annealed ohmic contacts with low contact resistivity possible.
Download or read book W and WSi(x) Ohmic Contacts on P- And N-Type GaN. written by and published by . This book was released on 1998 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: W and WSi ohmic contacts on both p- and n-type GaN have been annealed at temperatures from 300-1000 *C. There is minimal reaction (
Author : Alan McTeer
Publisher :
ISBN 13 : 9781625260161
Total Pages : pages
Book Rating : 4.2/5 (61 download)
Download or read book Red Zone written by Alan McTeer and published by . This book was released on 2012-11-12 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Dennis Eugene Walker
Publisher :
ISBN 13 :
Total Pages : 217 pages
Book Rating : 4.:/5 (72 download)
Download or read book The Role of Defects on Schottky and Ohmic Contact Characteristics for GaN and AlGaN/GaN High-electron Mobility Transistors written by Dennis Eugene Walker and published by . This book was released on 2006 with total page 217 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: The AlGaN/GaN material system is ideally suited for UV detectors, light sources, and high performance, high power transistors. Through an understanding of the physics and device properties associated with defects, engineered solutions can allow the utilization of the full potential of AlGaN/GaN device properties. Auger Electron Spectroscopy (AES) and secondary electron threshold (SET) techniques allow the characterization of band bending and work function at semiconductor surfaces. Using these techniques with ultra-high vacuum (UHV) sample cleaving and metal deposition, Schottky barrier formation to non-polar GaN was investigated revealing cases of both ideal band-bending and Fermi level pinning. Cathodoluminescence spectroscopy (CL) allows the investigation of luminescent defect levels with depth-resolving capability by controlling the incident beam voltage and associated electron beam penetration into the sample. High electron mobility transistors (HEMTs) exhibiting current collapse were investigated using CL and CL mapping and specific defects were found in the GaN channel and buffer regions that may help explain the current collapse phenomena. Coupling a novel gate mask into a typical HEMT fabrication sequence and utilizing three, independent UHV sample cleaning techniques including thermal desorption of contaminants, Ga-reflux, and N2 ion sputtering, and metallization of the gates on AlGaN/GaN HEMTs, correlations in defect levels, surface cleaning technique, and finished device performance were found. In analyzing the CL data for this sample, however, a specific feature located just below the GaN near band edge was observed to accumulate near the Ohmic contacts prompting a further investigation of both the effects of the RIE etch used in producing the UHV-compatible mask as well as four different Ohmic contact structures on both defect levels determined by CL and on final device performance. Finally, a bulk GaN sample was processed with Ohmic contacts to determine the correlation of the AlGaN device layer in the formation of this defect level associated with the Ohmic contacts and the role of the mesa RIE etch on the same defect. Through these investigations, progress in the underlying physics of Schottky barrier formation on GaN and the important role of defects on device performance using AES, SET, and CL have been demonstrated.
Author : Stephen Pearton
Publisher : Elsevier
ISBN 13 : 0128145226
Total Pages : 510 pages
Book Rating : 4.1/5 (281 download)
Download or read book Gallium Oxide written by Stephen Pearton and published by Elsevier. This book was released on 2018-10-15 with total page 510 pages. Available in PDF, EPUB and Kindle. Book excerpt: Gallium Oxide: Technology, Devices and Applications discusses the wide bandgap semiconductor and its promising applications in power electronics, solar blind UV detectors, and in extreme environment electronics. It also covers the fundamental science of gallium oxide, providing an in-depth look at the most relevant properties of this materials system. High quality bulk Ga2O3 is now commercially available from several sources and n-type epi structures are also coming onto the market. As researchers are focused on creating new complex structures, the book addresses the latest processing and synthesis methods. Chapters are designed to give readers a complete picture of the Ga2O3 field and the area of devices based on Ga2O3, from their theoretical simulation, to fabrication and application. Provides an overview of the advantages of the gallium oxide materials system, the advances in in bulk and epitaxial crystal growth, device design and processing Reviews the most relevant applications, including photodetectors, FETs, FINFETs, MOSFETs, sensors, catalytic applications, and more Addresses materials properties, including structural, mechanical, electrical, optical, surface and contact
