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Ohmic And Schottky Contacts To N Gaas Using Thermal And Scanned Electron Beam Annealing
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Book Synopsis Ohmic and Schottky Contacts to N-GaAs Using Thermal and Scanned Electron Beam Annealing by : Krishnamachar Prasad
Download or read book Ohmic and Schottky Contacts to N-GaAs Using Thermal and Scanned Electron Beam Annealing written by Krishnamachar Prasad and published by . This book was released on 1990 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to Semiconductors by : Electrochemical Society
Download or read book Ohmic Contacts to Semiconductors written by Electrochemical Society and published by . This book was released on 1969 with total page 372 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Ohmic Contacts to N-GaAs and N-In05̣3Ga04̣7As by : David Yuxiao Chen
Download or read book Ohmic Contacts to N-GaAs and N-In05̣3Ga04̣7As written by David Yuxiao Chen and published by . This book was released on 1997 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Thermally Stable Metal/GaAs Contacts by : Jian Ding
Download or read book Thermally Stable Metal/GaAs Contacts written by Jian Ding and published by . This book was released on 1989 with total page 292 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide by : Long-Ching Wang
Download or read book The Development and Application of Nonspiking Ohmic Contacts Formed by Solid-phase Reactions to N-type Gallium Arsenide written by Long-Ching Wang and published by . This book was released on 1991 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Mechanism of the Schottky Contact Formation in Metal/GaAs System by : Prashant Balvant Phatak
Download or read book Mechanism of the Schottky Contact Formation in Metal/GaAs System written by Prashant Balvant Phatak and published by . This book was released on 1995 with total page 246 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis High Temperature Stability of W/GaAs Schottky Contacts by : Steven KaYin Cheung
Download or read book High Temperature Stability of W/GaAs Schottky Contacts written by Steven KaYin Cheung and published by . This book was released on 1986 with total page 186 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Electrical & Electronics Abstracts by :
Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Semiconductors and Semimetals written by and published by Academic Press. This book was released on 1984-12-20 with total page 471 pages. Available in PDF, EPUB and Kindle. Book excerpt: Semiconductors and Semimetals
Book Synopsis Low Resistivity Ohmic Contacts to Moderately Doped N-GaAs with Low Temperature Processing by :
Download or read book Low Resistivity Ohmic Contacts to Moderately Doped N-GaAs with Low Temperature Processing written by and published by . This book was released on 1994 with total page 16 pages. Available in PDF, EPUB and Kindle. Book excerpt: A low-temperature process for forming ohmic contacts to moderately doped GaAs has been optimized using a PdGe metallization scheme. Minimum specific contact resistivity of 1.5 x 10−6 -cm2 has been obtained with a low anneal temperature of 250 C. Results for optimizing both time and temperature are reported and compared to GeAu n-GaAs contacts. Material compositions was analyzed by x-ray photoelectron spectroscopy and circuit metal interconnect contact resisitivity to the low-temperature processed PdGe contacts is reported. For the lowest temperature anneals considered, excess Ge on the ohmic contact layer is suspected of degrading interconnect metal contacts, while higher temperature anneals permitted interconnect metal formation with negligible contact resistivity. Atomic force microscopy measurements showed that the PdGe surface morphology is much more uniform than standard GeAu contacts.
Book Synopsis Proceedings of the Twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI) by : D. N. Buckley
Download or read book Proceedings of the Twenty-sixth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXVI) written by D. N. Buckley and published by The Electrochemical Society. This book was released on 1997 with total page 340 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Download or read book Metals Abstracts written by and published by . This book was released on 1990 with total page 1478 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Physics of Semiconductor Devices by : V. K. Jain
Download or read book Physics of Semiconductor Devices written by V. K. Jain and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 841 pages. Available in PDF, EPUB and Kindle. Book excerpt: The purpose of this workshop is to spread the vast amount of information available on semiconductor physics to every possible field throughout the scientific community. As a result, the latest findings, research and discoveries can be quickly disseminated. This workshop provides all participating research groups with an excellent platform for interaction and collaboration with other members of their respective scientific community. This workshop’s technical sessions include various current and significant topics for applications and scientific developments, including • Optoelectronics • VLSI & ULSI Technology • Photovoltaics • MEMS & Sensors • Device Modeling and Simulation • High Frequency/ Power Devices • Nanotechnology and Emerging Areas • Organic Electronics • Displays and Lighting Many eminent scientists from various national and international organizations are actively participating with their latest research works and also equally supporting this mega event by joining the various organizing committees.
Book Synopsis Development of High Temperature Stable Ohmic and Schottky Contacts on N-GaN by : Rohit Khanna
Download or read book Development of High Temperature Stable Ohmic and Schottky Contacts on N-GaN written by Rohit Khanna and published by . This book was released on 2007 with total page pages. Available in PDF, EPUB and Kindle. Book excerpt: The contacts formed gave specific contact resistance of the order of 10−5 to 10−6 Ohm-cm2. A minimum contact resistance of 1.5x10−6 Ohm.cm2 was achieved for the TiB2 based scheme at an annealing temperature of 850-900 degreeC, which was comparable to a regular ohmic contact of Ti/Al/Ni/Au on n GaN. When some of borides contacts were placed on a hot plate or in hot oven for temperature ranging from 200 degreeC to 350 degreeC, the regular metallization contacts degraded before than borides ones. Even with a certain amount of intermixing of the metallization scheme the boride contacts showed minimal roughening and smoother morphology, which, in terms of edge acuity, is crucial for very small gate devices.
Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Laser Annealing of Refractory OHMIC Contracts to GaAs by : J. F. Giuliani
Download or read book Laser Annealing of Refractory OHMIC Contracts to GaAs written by J. F. Giuliani and published by . This book was released on 1981 with total page 10 pages. Available in PDF, EPUB and Kindle. Book excerpt: Laser annealing has been successfully applied in producing low resistance ohmic contact to GaAs using refractory metallizations. These alloy systems include TiW, Ta, Mo, and Ni deposited on epitaxial Ge layers grown on (100) n-type GaAs substrates. In some cases an N+ layer obtained by ion implantation was present at the GaAs surface. Ohmic contact resistances of 1-5 X .0000001 omega-sq cm have been produced by laser annealing. These values compare favorably with the results obtained by thermal annealing. The refractory ohmic contacts reported here are intended to improve the reliability of devices operated under high-temperature and/or high-power conditions.
Book Synopsis Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-alloyed Ohmic Contacts by : Nick Kepler
Download or read book Shallow Diffusion of GeSe in GaAs Using Rapid Thermal Annealing to Form Non-alloyed Ohmic Contacts written by Nick Kepler and published by . This book was released on 1985 with total page 124 pages. Available in PDF, EPUB and Kindle. Book excerpt:
