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Author : Qiang Xiao (author)
Publisher :
ISBN 13 :
Total Pages : 442 pages
Book Rating : 4.:/5 (319 download)
Download or read book Numerical Simulations of Czochralski Growth of Single Crystals written by Qiang Xiao (author) and published by . This book was released on 1994 with total page 442 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Sadik Dost
Publisher : Elsevier
ISBN 13 : 0080467946
Total Pages : 505 pages
Book Rating : 4.0/5 (84 download)
Download or read book Single Crystal Growth of Semiconductors from Metallic Solutions written by Sadik Dost and published by Elsevier. This book was released on 2006-11-17 with total page 505 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystal Growth of Semiconductors from Metallic Solutions covers the four principal growth techniques currently in use for the growth of semiconductor single crystals from metallic solutions. Providing an in-depth review of the state-of-the-art of each, both experimentally and by numerical simulations. The importance of a close interaction between the numerical and experimental aspects of the processes is also emphasized. Advances in the fields of electronics and opto-electronics are hampered by the limited number of substrate materials which can be readily produced by melt-growth techniques such as the Czochralski and Bridgman methods. This can be alleviated by the use of alternative growth techniques, and in particular, growth from metallic solutions. The principal techniques currently in use are: Liquid Phase Epitaxy; Liquid Phase Electroepitaxy; the Travelling Heater Method, and; Liquid Phase Diffusion. Single Crystal Growth of Semiconductors from Metallic Solutions will serve as a valuable reference tool for researchers, and graduate and senior undergraduate students in the field of crystal growth. It covers most of the models developed in recent years. The detailed development of basic and constitutive equations and the associated interface and boundary conditions given for each technique will be very valuable to researchers for the development of their new models.* Describes the fundamentals of crystal growth modelling* Providing a state-of-the art description of the mathematical and experimental growth processes * Allows reader to gain clear insight into the practical and mathematical aspects of the topic
Author : Georg Müller
Publisher : Elsevier
ISBN 13 : 0080473075
Total Pages : 434 pages
Book Rating : 4.0/5 (84 download)
Download or read book Crystal Growth - From Fundamentals to Technology written by Georg Müller and published by Elsevier. This book was released on 2004-07-07 with total page 434 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book contains 5 chapters with 19 contributions form internationally well acknowledged experts in various fields of crystal growth. The topics are ranging from fundamentals (thermodynamic of epitaxy growth, kinetics, morphology, modeling) to new crystal materials (carbon nanocrystals and nanotubes, biological crystals), to technology (Silicon Czochralski growth, oxide growth, III-IV epitaxy) and characterization (point defects, X-ray imaging, in-situ STM). It covers the treatment of bulk growth as well as epitaxy by anorganic and organic materials.
Author : Hans J. Scheel
Publisher : John Wiley & Sons
ISBN 13 : 0470491108
Total Pages : 695 pages
Book Rating : 4.4/5 (74 download)
Download or read book Crystal Growth Technology written by Hans J. Scheel and published by John Wiley & Sons. This book was released on 2009-07-31 with total page 695 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume deals with the technologies of crystal fabrication, of crystal machining, and of epilayer production and is the first book on industrial and scientific aspects of crystal and layer production. The major industrial crystals are treated: Si, GaAs, GaP, InP, CdTe, sapphire, oxide and halide scintillator crystals, crystals for optical, piezoelectric and microwave applications and more. Contains 29 contributions from leading crystal technologists covering the following topics: * General aspects of crystal growth technology * Silicon * Compound semiconductors * Oxides and halides * Crystal machining * Epitaxy and layer deposition Scientific and technological problems of production and machining of industrial crystals are discussed by top experts, most of them from the major growth industries and crystal growth centers. In addition, it will be useful for the users of crystals, for teachers and graduate students in materials sciences, in electronic and other functional materials, chemical and metallurgical engineering, micro-and optoelectronics including nanotechnology, mechanical engineering and precision-machining, microtechnology, and in solid-state sciences.
Author : Takao Abe
Publisher : The Electrochemical Society
ISBN 13 : 9781566772235
Total Pages : 548 pages
Book Rating : 4.7/5 (722 download)
Download or read book Proceedings of the Third International Symposium on Defects in Silicon written by Takao Abe and published by The Electrochemical Society. This book was released on 1999 with total page 548 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Golla Eranna
Publisher : CRC Press
ISBN 13 : 1482232812
Total Pages : 432 pages
Book Rating : 4.4/5 (822 download)
Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemically inert and stable, but growing it as a single crystal creates many technological challenges. Crystal Growth and Evaluation of Silicon for VLSI and ULSI is one of the first books to cover the systematic growth of silicon single crystals and the complete evaluation of silicon, from sand to useful wafers for device fabrication. Written for engineers and researchers working in semiconductor fabrication industries, this practical text: Describes different techniques used to grow silicon single crystals Explains how grown single-crystal ingots become a complete silicon wafer for integrated-circuit fabrication Reviews different methods to evaluate silicon wafers to determine suitability for device applications Analyzes silicon wafers in terms of resistivity and impurity concentration mapping Examines the effect of intentional and unintentional impurities Explores the defects found in regular silicon-crystal lattice Discusses silicon wafer preparation for VLSI and ULSI processing Crystal Growth and Evaluation of Silicon for VLSI and ULSI is an essential reference for different approaches to the selection of the basic silicon-containing compound, separation of silicon as metallurgical-grade pure silicon, subsequent purification, single-crystal growth, and defects and evaluation of the deviations within the grown crystals.
Author : Govindhan Dhanaraj
Publisher : Springer Science & Business Media
ISBN 13 : 3540747613
Total Pages : 1823 pages
Book Rating : 4.5/5 (47 download)
Download or read book Springer Handbook of Crystal Growth written by Govindhan Dhanaraj and published by Springer Science & Business Media. This book was released on 2010-10-20 with total page 1823 pages. Available in PDF, EPUB and Kindle. Book excerpt: Over the years, many successful attempts have been chapters in this part describe the well-known processes made to describe the art and science of crystal growth, such as Czochralski, Kyropoulos, Bridgman, and o- and many review articles, monographs, symposium v- ing zone, and focus speci cally on recent advances in umes, and handbooks have been published to present improving these methodologies such as application of comprehensive reviews of the advances made in this magnetic elds, orientation of the growth axis, intro- eld. These publications are testament to the grow- duction of a pedestal, and shaped growth. They also ing interest in both bulk and thin- lm crystals because cover a wide range of materials from silicon and III–V of their electronic, optical, mechanical, microstructural, compounds to oxides and uorides. and other properties, and their diverse scienti c and The third part, Part C of the book, focuses on - technological applications. Indeed, most modern ad- lution growth. The various aspects of hydrothermal vances in semiconductor and optical devices would growth are discussed in two chapters, while three other not have been possible without the development of chapters present an overview of the nonlinear and laser many elemental, binary, ternary, and other compound crystals, KTP and KDP. The knowledge on the effect of crystals of varying properties and large sizes. The gravity on solution growth is presented through a c- literature devoted to basic understanding of growth parison of growth on Earth versus in a microgravity mechanisms, defect formation, and growth processes environment.
Author : Deren Yang
Publisher : Springer
ISBN 13 : 9783662564714
Total Pages : 0 pages
Book Rating : 4.5/5 (647 download)
Download or read book Handbook of Photovoltaic Silicon written by Deren Yang and published by Springer. This book was released on 2019-11-28 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: The utilization of sun light is one of the hottest topics in sustainable energy research. To efficiently convert sun power into a reliable energy – electricity – for consumption and storage, silicon and its derivatives have been widely studied and applied in solar cell systems. This handbook covers the photovoltaics of silicon materials and devices, providing a comprehensive summary of the state of the art of photovoltaic silicon sciences and technologies. This work is divided into various areas including but not limited to fundamental principles, design methodologies, wafering techniques/fabrications, characterizations, applications, current research trends and challenges. It offers the most updated and self-explanatory reference to all levels of students and acts as a quick reference to the experts from the fields of chemistry, material science, physics, chemical engineering, electrical engineering, solar energy, etc..
Author : Ernst Heinrich Hirschel
Publisher : Springer Science & Business Media
ISBN 13 : 3540456937
Total Pages : 293 pages
Book Rating : 4.5/5 (44 download)
Download or read book Numerical Flow Simulation III written by Ernst Heinrich Hirschel and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 293 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains eighteen reports on work, which is conducted since 2000 in the Collaborative Research Programme 'Numerical Flow Simulation' of the Centre National de la Recherche Scientifique (CNRS) and the Deutsche Forschungsgemeinschaft (DFG). French and German engineers and mathematicians present their joint research on the topics 'Development of Solution Techniques', 'Crystal Growth and Melts', 'Flows of Reacting Gases, Sound Generation' and 'Turbulent Flows'. In the background of their work is the still strong growth of the performance of super-computer architectures, which, together with large advances in algorithms, is opening vast new application areas of numerical flow simulation in research and industrial work. Results of this programme from the period 1996 to 1998 have been presented in NNFM 66 (1998), and NNFM75 (2001).
Author : Roberto Fornari
Publisher : Woodhead Publishing
ISBN 13 : 008102097X
Total Pages : 596 pages
Book Rating : 4.0/5 (81 download)
Download or read book Single Crystals of Electronic Materials written by Roberto Fornari and published by Woodhead Publishing. This book was released on 2018-09-18 with total page 596 pages. Available in PDF, EPUB and Kindle. Book excerpt: Single Crystals of Electronic Materials: Growth and Properties is a complete overview of the state-of-the-art growth of bulk semiconductors. It is not only a valuable update on the body of information on crystal growth of well-established electronic materials, such as silicon, III-V, II-VI and IV-VI semiconductors, but also includes chapters on novel semiconductors, such as wide bandgap oxides like ZnO, Ga2, O3, In2, O3, Al2, O3, nitrides (AIN and GaN), and diamond. Each chapter focuses on a specific material, providing a comprehensive overview that includes applications and requirements, thermodynamic properties, schematics of growth methods, and more. - Presents the latest research and most comprehensive overview of both standard and novel semiconductors - Provides a systematic examination of important electronic materials, including their applications, growth methods, properties, technologies and defect and doping issues - Takes a close look at emerging materials, including wide bandgap oxides, nitrides and diamond
Author : Kh.S. Bagdasarov
Publisher : Springer Science & Business Media
ISBN 13 : 1461536626
Total Pages : 271 pages
Book Rating : 4.4/5 (615 download)
Download or read book Growth of Crystals written by Kh.S. Bagdasarov and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 271 pages. Available in PDF, EPUB and Kindle. Book excerpt: Papers from the Sixth All-Union Conference on Growth of Crystals comprise Volume 16 of this series. The articles were chosen with a view to more fully elucidate the basic problems of crystal growth as reflected in domestic and foreign reviews and in original studies. This volume consists of six parts. Part I is devoted to mechanisms of crystal growth that are important for production of materials with given properties. This part examines the temporal evolution of an inhomogeneous state and the array of semicellular and eutectic structures during microstructure formation, the effect of impurity on the nonequi librium vacancy concentration in a growing crystal, and the role of soluble and insoluble impurities in the birth and growth of crystals. Part II deals with the synthesis and electrophysical properties of novel solid electrolytes that are promis ing for practical use, analysis and correlation of the large amount of data on growth by the Bridgman-Stockbar ger method of single crystals of fluorite phases far from stoichiometry, and the hydrothermal chemistry and growth of hexagonal germanium dioxide.
Author :
Publisher :
ISBN 13 :
Total Pages : 1134 pages
Book Rating : 4.:/5 (31 download)
Download or read book Scientific and Technical Aerospace Reports written by and published by . This book was released on 1989 with total page 1134 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Author : Peter M.A. Sloot
Publisher : Springer
ISBN 13 : 3540448608
Total Pages : 1124 pages
Book Rating : 4.5/5 (44 download)
Download or read book Computational Science — ICCS 2003 written by Peter M.A. Sloot and published by Springer. This book was released on 2003-08-03 with total page 1124 pages. Available in PDF, EPUB and Kindle. Book excerpt: Some of the most challenging problems in science and engineering are being addressed by the integration of computation and science, a research ?eld known as computational science. Computational science plays a vital role in fundamental advances in biology, physics, chemistry, astronomy, and a host of other disciplines. This is through the coordination of computation, data management, access to instrumentation, knowledge synthesis, and the use of new devices. It has an impact on researchers and practitioners in the sciences and beyond. The sheer size of many challenges in computational science dictates the use of supercomputing, parallel and distri- ted processing, grid-based processing, advanced visualization and sophisticated algorithms. At the dawn of the 21st century the series of International Conferences on Computational Science (ICCS) was initiated with a ?rst meeting in May 2001 in San Francisco. The success of that meeting motivated the organization of the - cond meeting held in Amsterdam April 21–24, 2002, where over 500 participants pushed the research ?eld further. The International Conference on Computational Science 2003 (ICCS 2003) is the follow-up to these earlier conferences. ICCS 2003 is unique, in that it was a single event held at two di?erent sites almost opposite each other on the globe – Melbourne, Australia and St. Petersburg, Russian Federation. The conference ran on the same dates at both locations and all the presented work was published in a single set of proceedings, which you hold in your hands right now.
Author : S. Murakami
Publisher : Springer Science & Business Media
ISBN 13 : 940159628X
Total Pages : 541 pages
Book Rating : 4.4/5 (15 download)
Download or read book IUTAM Symposium on Creep in Structures written by S. Murakami and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 541 pages. Available in PDF, EPUB and Kindle. Book excerpt: These proceedings contain 48 innovative papers consolidating the development of creep research since 1990 and discussing the new horizons in this fundamental field of applied mechanics in the coming century. This volume is useful for researchers and graduate course students in the relevant fields.
Author : V. I. Talanin
Publisher : Cambridge Scholars Publishing
ISBN 13 : 152752342X
Total Pages : 281 pages
Book Rating : 4.5/5 (275 download)
Download or read book The Formation of Structural Imperfections in Semiconductor Silicon written by V. I. Talanin and published by Cambridge Scholars Publishing. This book was released on 2018-12-14 with total page 281 pages. Available in PDF, EPUB and Kindle. Book excerpt: Today, it is difficult to imagine all spheres of human activity without personal computers, solid-state electronic devices, micro- and nanoelectronics, photoconverters, and mobile communication devices. The basic material of modern electronics and for all of these industries is semiconductor silicon. Its properties and applications are determined by defects in its crystal structure. However, until now, there has been no complete and reliable description of the creation and transformation of such a defective structure. This book solves this mystery through two different approaches to semiconductor silicon: the classical and the probabilistic. This book brings together, for the first time, all existing experimental and theoretical information on the internal structure of semiconductor silicon. It will appeal to a wide range of readers, from materials scientists and practical engineers to students.
Author : Golla Eranna
Publisher : CRC Press
ISBN 13 : 1040055850
Total Pages : 432 pages
Book Rating : 4.0/5 (4 download)
Download or read book Crystal Growth and Evaluation of Silicon for VLSI and ULSI written by Golla Eranna and published by CRC Press. This book was released on 2014-12-08 with total page 432 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon, as a single-crystal semiconductor, has sparked a revolution in the field of electronics and touched nearly every field of science and technology. Though available abundantly as silica and in various other forms in nature, silicon is difficult to separate from its chemical compounds because of its reactivity. As a solid, silicon is chemical
Author : Vito Raineri
Publisher : Trans Tech Publications Ltd
ISBN 13 : 3035707073
Total Pages : 809 pages
Book Rating : 4.0/5 (357 download)
Download or read book Gettering and Defect Engineering in Semiconductor Technology IX written by Vito Raineri and published by Trans Tech Publications Ltd. This book was released on 2001-11-30 with total page 809 pages. Available in PDF, EPUB and Kindle. Book excerpt: GADEST 2001 Proceedings of the 9th Int. Conference on Gettering anf Defect Engineering in Semiconductor Technology , S. Tecla, Italy
