Negative Bias Temperature Instability Nbti In Mos Devices

Download Negative Bias Temperature Instability Nbti In Mos Devices full books in PDF, epub, and Kindle. Read online Negative Bias Temperature Instability Nbti In Mos Devices ebook anywhere anytime directly on your device. Fast Download speed and no annoying ads. We cannot guarantee that every ebooks is available!

Recent Advances in PMOS Negative Bias Temperature Instability

Author : Souvik Mahapatra
Publisher : Springer Nature
ISBN 13 : 9811661200
Total Pages : 322 pages
Book Rating : 4.8/5 (116 download)

DOWNLOAD NOW!

Book Synopsis Recent Advances in PMOS Negative Bias Temperature Instability by : Souvik Mahapatra

Download or read book Recent Advances in PMOS Negative Bias Temperature Instability written by Souvik Mahapatra and published by Springer Nature. This book was released on 2021-11-25 with total page 322 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book covers advances in Negative Bias Temperature Instability (NBTI) and will prove useful to researchers and professionals in the semiconductor devices areas. NBTI continues to remain as an important reliability issue for CMOS transistors and circuits. Development of NBTI resilient technology relies on utilizing suitable stress conditions, artifact free measurements and accurate physics-based models for the reliable determination of degradation at end-of-life, as well as understanding the process, material and device architectural impacts. This book discusses: Ultra-fast measurements and modelling of parametric drift due to NBTI in different transistor architectures: planar bulk and FDSOI p-MOSFETs, p-FinFETs and GAA-SNS p-FETs, with Silicon and Silicon Germanium channels. BTI Analysis Tool (BAT), a comprehensive physics-based framework, to model the measured time kinetics of parametric drift during and after DC and AC stress, at different stress and recovery biases and temperature, as well as pulse duty cycle and frequency. The Reaction Diffusion (RD) model is used for generated interface traps, Transient Trap Occupancy Model (TTOM) for charge occupancy of the generated interface traps and their contribution, Activated Barrier Double Well Thermionic (ABDWT) model for hole trapping in pre-existing bulk gate insulator traps, and Reaction Diffusion Drift (RDD) model for bulk trap generation in the BAT framework; NBTI parametric drift is due to uncorrelated contributions from the trap generation (interface, bulk) and trapping processes. Analysis and modelling of Nitrogen incorporation into the gate insulator, Germanium incorporation into the channel, and mechanical stress effects due to changes in the transistor layout or device dimensions; similarities and differences of (100) surface dominated planar and GAA MOSFETs and (110) sidewall dominated FinFETs are analysed.

Bias Temperature Instability for Devices and Circuits

Author : Tibor Grasser
Publisher : Springer Science & Business Media
ISBN 13 : 1461479096
Total Pages : 805 pages
Book Rating : 4.4/5 (614 download)

DOWNLOAD NOW!

Book Synopsis Bias Temperature Instability for Devices and Circuits by : Tibor Grasser

Download or read book Bias Temperature Instability for Devices and Circuits written by Tibor Grasser and published by Springer Science & Business Media. This book was released on 2013-10-22 with total page 805 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a single-source reference to one of the more challenging reliability issues plaguing modern semiconductor technologies, negative bias temperature instability. Readers will benefit from state-of-the art coverage of research in topics such as time dependent defect spectroscopy, anomalous defect behavior, stochastic modeling with additional metastable states, multiphonon theory, compact modeling with RC ladders and implications on device reliability and lifetime.

Fundamentals of Bias Temperature Instability in MOS Transistors

Author : Souvik Mahapatra
Publisher : Springer
ISBN 13 : 8132225082
Total Pages : 282 pages
Book Rating : 4.1/5 (322 download)

DOWNLOAD NOW!

Book Synopsis Fundamentals of Bias Temperature Instability in MOS Transistors by : Souvik Mahapatra

Download or read book Fundamentals of Bias Temperature Instability in MOS Transistors written by Souvik Mahapatra and published by Springer. This book was released on 2015-08-05 with total page 282 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book aims to cover different aspects of Bias Temperature Instability (BTI). BTI remains as an important reliability concern for CMOS transistors and circuits. Development of BTI resilient technology relies on utilizing artefact-free stress and measurement methods and suitable physics-based models for accurate determination of degradation at end-of-life and understanding the gate insulator process impact on BTI. This book discusses different ultra-fast characterization techniques for recovery artefact free BTI measurements. It also covers different direct measurements techniques to access pre-existing and newly generated gate insulator traps responsible for BTI. The book provides a consistent physical framework for NBTI and PBTI respectively for p- and n- channel MOSFETs, consisting of trap generation and trapping. A physics-based compact model is presented to estimate measured BTI degradation in planar Si MOSFETs having differently processed SiON and HKMG gate insulators, in planar SiGe MOSFETs and also in Si FinFETs. The contents also include a detailed investigation of the gate insulator process dependence of BTI in differently processed SiON and HKMG MOSFETs. The book then goes on to discuss Reaction-Diffusion (RD) model to estimate generation of new traps for DC and AC NBTI stress and Transient Trap Occupancy Model (TTOM) to estimate charge occupancy of generated traps and their contribution to BTI degradation. Finally, a comprehensive NBTI modeling framework including TTOM enabled RD model and hole trapping to predict time evolution of BTI degradation and recovery during and after DC stress for different stress and recovery biases and temperature, during consecutive arbitrary stress and recovery cycles and during AC stress at different frequency and duty cycle. The contents of this book should prove useful to academia and professionals alike.

MOS (Metal Oxide Semiconductor) Physics and Technology

Author : E. H. Nicollian
Publisher : John Wiley & Sons
ISBN 13 : 047143079X
Total Pages : 928 pages
Book Rating : 4.4/5 (714 download)

DOWNLOAD NOW!

Book Synopsis MOS (Metal Oxide Semiconductor) Physics and Technology by : E. H. Nicollian

Download or read book MOS (Metal Oxide Semiconductor) Physics and Technology written by E. H. Nicollian and published by John Wiley & Sons. This book was released on 2002-11-21 with total page 928 pages. Available in PDF, EPUB and Kindle. Book excerpt: Explains the theoretical and experimental foundations of the measurement of the electrical properties of the MOS system and the technology for controlling its properties. Emphasizes the silica and the silica-silicon interface. Provides a critical assessment of the literature, corrects incomplete or incorrect theoretical formulations, and gives critical comparisons of measurement methods. Contains information needed to grow an oxide, make an MOS capacitor array, and fabricate an integrated circuit with optimal performance and stability.

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Author : Jacopo Franco
Publisher : Springer Science & Business Media
ISBN 13 : 9400776632
Total Pages : 203 pages
Book Rating : 4.4/5 (7 download)

DOWNLOAD NOW!

Book Synopsis Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications by : Jacopo Franco

Download or read book Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications written by Jacopo Franco and published by Springer Science & Business Media. This book was released on 2013-10-19 with total page 203 pages. Available in PDF, EPUB and Kindle. Book excerpt: Due to the ever increasing electric fields in scaled CMOS devices, reliability is becoming a showstopper for further scaled technology nodes. Although several groups have already demonstrated functional Si channel devices with aggressively scaled Equivalent Oxide Thickness (EOT) down to 5Å, a 10 year reliable device operation cannot be guaranteed anymore due to severe Negative Bias Temperature Instability. This book focuses on the reliability of the novel (Si)Ge channel quantum well pMOSFET technology. This technology is being considered for possible implementation in next CMOS technology nodes, thanks to its benefit in terms of carrier mobility and device threshold voltage tuning. We observe that it also opens a degree of freedom for device reliability optimization. By properly tuning the device gate stack, sufficiently reliable ultra-thin EOT devices with a 10 years lifetime at operating conditions are demonstrated. The extensive experimental datasets collected on a variety of processed 300mm wafers and presented here show the reliability improvement to be process - and architecture-independent and, as such, readily transferable to advanced device architectures as Tri-Gate (finFET) devices. We propose a physical model to understand the intrinsically superior reliability of the MOS system consisting of a Ge-based channel and a SiO2/HfO2 dielectric stack. The improved reliability properties here discussed strongly support (Si)Ge technology as a clear frontrunner for future CMOS technology nodes.

Fundamentals of Modern VLSI Devices

Author : Yuan Taur
Publisher : Cambridge University Press
ISBN 13 : 9781107635715
Total Pages : 0 pages
Book Rating : 4.6/5 (357 download)

DOWNLOAD NOW!

Book Synopsis Fundamentals of Modern VLSI Devices by : Yuan Taur

Download or read book Fundamentals of Modern VLSI Devices written by Yuan Taur and published by Cambridge University Press. This book was released on 2013-05-02 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt: Learn the basic properties and designs of modern VLSI devices, as well as the factors affecting performance, with this thoroughly updated second edition. The first edition has been widely adopted as a standard textbook in microelectronics in many major US universities and worldwide. The internationally renowned authors highlight the intricate interdependencies and subtle trade-offs between various practically important device parameters, and provide an in-depth discussion of device scaling and scaling limits of CMOS and bipolar devices. Equations and parameters provided are checked continuously against the reality of silicon data, making the book equally useful in practical transistor design and in the classroom. Every chapter has been updated to include the latest developments, such as MOSFET scale length theory, high-field transport model and SiGe-base bipolar devices.

Reliability Prediction from Burn-In Data Fit to Reliability Models

Author : Joseph Bernstein
Publisher : Academic Press
ISBN 13 : 0128008199
Total Pages : 108 pages
Book Rating : 4.1/5 (28 download)

DOWNLOAD NOW!

Book Synopsis Reliability Prediction from Burn-In Data Fit to Reliability Models by : Joseph Bernstein

Download or read book Reliability Prediction from Burn-In Data Fit to Reliability Models written by Joseph Bernstein and published by Academic Press. This book was released on 2014-03-06 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: This work will educate chip and system designers on a method for accurately predicting circuit and system reliability in order to estimate failures that will occur in the field as a function of operating conditions at the chip level. This book will combine the knowledge taught in many reliability publications and illustrate how to use the knowledge presented by the semiconductor manufacturing companies in combination with the HTOL end-of-life testing that is currently performed by the chip suppliers as part of their standard qualification procedure and make accurate reliability predictions. This book will allow chip designers to predict FIT and DPPM values as a function of operating conditions and chip temperature so that users ultimately will have control of reliability in their design so the reliability and performance will be considered concurrently with their design. - The ability to include reliability calculations and test results in their product design - The ability to use reliability data provided to them by their suppliers to make meaningful reliability predictions - Have accurate failure rate calculations for calculating warrantee period replacement costs

Thermally-Aware Design

Author : Yong Zhan
Publisher : Now Publishers Inc
ISBN 13 : 1601981708
Total Pages : 131 pages
Book Rating : 4.6/5 (19 download)

DOWNLOAD NOW!

Book Synopsis Thermally-Aware Design by : Yong Zhan

Download or read book Thermally-Aware Design written by Yong Zhan and published by Now Publishers Inc. This book was released on 2008 with total page 131 pages. Available in PDF, EPUB and Kindle. Book excerpt: Provides an overview of analysis and optimization techniques for thermally-aware chip design.

Junctionless Field-Effect Transistors

Author : Shubham Sahay
Publisher : John Wiley & Sons
ISBN 13 : 1119523532
Total Pages : 496 pages
Book Rating : 4.1/5 (195 download)

DOWNLOAD NOW!

Book Synopsis Junctionless Field-Effect Transistors by : Shubham Sahay

Download or read book Junctionless Field-Effect Transistors written by Shubham Sahay and published by John Wiley & Sons. This book was released on 2019-02-27 with total page 496 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive one-volume reference on current JLFET methods, techniques, and research Advancements in transistor technology have driven the modern smart-device revolution—many cell phones, watches, home appliances, and numerous other devices of everyday usage now surpass the performance of the room-filling supercomputers of the past. Electronic devices are continuing to become more mobile, powerful, and versatile in this era of internet-of-things (IoT) due in large part to the scaling of metal-oxide semiconductor field-effect transistors (MOSFETs). Incessant scaling of the conventional MOSFETs to cater to consumer needs without incurring performance degradation requires costly and complex fabrication process owing to the presence of metallurgical junctions. Unlike conventional MOSFETs, junctionless field-effect transistors (JLFETs) contain no metallurgical junctions, so they are simpler to process and less costly to manufacture.JLFETs utilize a gated semiconductor film to control its resistance and the current flowing through it. Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an inclusive, one-stop referenceon the study and research on JLFETs This timely book covers the fundamental physics underlying JLFET operation, emerging architectures, modeling and simulation methods, comparative analyses of JLFET performance metrics, and several other interesting facts related to JLFETs. A calibrated simulation framework, including guidance on SentaurusTCAD software, enables researchers to investigate JLFETs, develop new architectures, and improve performance. This valuable resource: Addresses the design and architecture challenges faced by JLFET as a replacement for MOSFET Examines various approaches for analytical and compact modeling of JLFETs in circuit design and simulation Explains how to use Technology Computer-Aided Design software (TCAD) to produce numerical simulations of JLFETs Suggests research directions and potential applications of JLFETs Junctionless Field-Effect Transistors: Design, Modeling, and Simulation is an essential resource for CMOS device design researchers and advanced students in the field of physics and semiconductor devices.

CMOS Electronics

Author : Jaume Segura
Publisher : John Wiley & Sons
ISBN 13 : 9780471476696
Total Pages : 370 pages
Book Rating : 4.4/5 (766 download)

DOWNLOAD NOW!

Book Synopsis CMOS Electronics by : Jaume Segura

Download or read book CMOS Electronics written by Jaume Segura and published by John Wiley & Sons. This book was released on 2004-03-26 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: CMOS manufacturing environments are surrounded with symptoms that can indicate serious test, design, or reliability problems, which, in turn, can affect the financial as well as the engineering bottom line. This book educates readers, including non-engineers involved in CMOS manufacture, to identify and remedy these causes. This book instills the electronic knowledge that affects not just design but other important areas of manufacturing such as test, reliability, failure analysis, yield-quality issues, and problems. Designed specifically for the many non-electronic engineers employed in the semiconductor industry who need to reliably manufacture chips at a high rate in large quantities, this is a practical guide to how CMOS electronics work, how failures occur, and how to diagnose and avoid them. Key features: Builds a grasp of the basic electronics of CMOS integrated circuits and then leads the reader further to understand the mechanisms of failure. Unique descriptions of circuit failure mechanisms, some found previously only in research papers and others new to this publication. Targeted to the CMOS industry (or students headed there) and not a generic introduction to the broader field of electronics. Examples, exercises, and problems are provided to support the self-instruction of the reader.

Robust SRAM Designs and Analysis

Author : Jawar Singh
Publisher : Springer Science & Business Media
ISBN 13 : 1461408180
Total Pages : 176 pages
Book Rating : 4.4/5 (614 download)

DOWNLOAD NOW!

Book Synopsis Robust SRAM Designs and Analysis by : Jawar Singh

Download or read book Robust SRAM Designs and Analysis written by Jawar Singh and published by Springer Science & Business Media. This book was released on 2012-08-01 with total page 176 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a guide to Static Random Access Memory (SRAM) bitcell design and analysis to meet the nano-regime challenges for CMOS devices and emerging devices, such as Tunnel FETs. Since process variability is an ongoing challenge in large memory arrays, this book highlights the most popular SRAM bitcell topologies (benchmark circuits) that mitigate variability, along with exhaustive analysis. Experimental simulation setups are also included, which cover nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis. Emphasis is placed throughout the book on the various trade-offs for achieving a best SRAM bitcell design. Provides a complete and concise introduction to SRAM bitcell design and analysis; Offers techniques to face nano-regime challenges such as process variation, leakage and NBTI for SRAM design and analysis; Includes simulation set-ups for extracting different design metrics for CMOS technology and emerging devices; Emphasizes different trade-offs for achieving the best possible SRAM bitcell design.

Nanometer CMOS ICs

Author : Harry J.M. Veendrick
Publisher : Springer
ISBN 13 : 3319475975
Total Pages : 639 pages
Book Rating : 4.3/5 (194 download)

DOWNLOAD NOW!

Book Synopsis Nanometer CMOS ICs by : Harry J.M. Veendrick

Download or read book Nanometer CMOS ICs written by Harry J.M. Veendrick and published by Springer. This book was released on 2017-04-28 with total page 639 pages. Available in PDF, EPUB and Kindle. Book excerpt: This textbook provides a comprehensive, fully-updated introduction to the essentials of nanometer CMOS integrated circuits. It includes aspects of scaling to even beyond 12nm CMOS technologies and designs. It clearly describes the fundamental CMOS operating principles and presents substantial insight into the various aspects of design implementation and application. Coverage includes all associated disciplines of nanometer CMOS ICs, including physics, lithography, technology, design, memories, VLSI, power consumption, variability, reliability and signal integrity, testing, yield, failure analysis, packaging, scaling trends and road blocks. The text is based upon in-house Philips, NXP Semiconductors, Applied Materials, ASML, IMEC, ST-Ericsson, TSMC, etc., courseware, which, to date, has been completed by more than 4500 engineers working in a large variety of related disciplines: architecture, design, test, fabrication process, packaging, failure analysis and software.

Hot Carrier Degradation in Semiconductor Devices

Author : Tibor Grasser
Publisher : Springer
ISBN 13 : 3319089943
Total Pages : 518 pages
Book Rating : 4.3/5 (19 download)

DOWNLOAD NOW!

Book Synopsis Hot Carrier Degradation in Semiconductor Devices by : Tibor Grasser

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

MOSFET Modeling & BSIM3 User’s Guide

Author : Yuhua Cheng
Publisher : Springer Science & Business Media
ISBN 13 : 0306470500
Total Pages : 467 pages
Book Rating : 4.3/5 (64 download)

DOWNLOAD NOW!

Book Synopsis MOSFET Modeling & BSIM3 User’s Guide by : Yuhua Cheng

Download or read book MOSFET Modeling & BSIM3 User’s Guide written by Yuhua Cheng and published by Springer Science & Business Media. This book was released on 2007-05-08 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Circuit simulation is essential in integrated circuit design, and the accuracy of circuit simulation depends on the accuracy of the transistor model. BSIM3v3 (BSIM for Berkeley Short-channel IGFET Model) has been selected as the first MOSFET model for standardization by the Compact Model Council, a consortium of leading companies in semiconductor and design tools. In the next few years, many fabless and integrated semiconductor companies are expected to switch from dozens of other MOSFET models to BSIM3. This will require many device engineers and most circuit designers to learn the basics of BSIM3. MOSFET Modeling & BSIM3 User's Guide explains the detailed physical effects that are important in modeling MOSFETs, and presents the derivations of compact model expressions so that users can understand the physical meaning of the model equations and parameters. It is the first book devoted to BSIM3. It treats the BSIM3 model in detail as used in digital, analog and RF circuit design. It covers the complete set of models, i.e., I-V model, capacitance model, noise model, parasitics model, substrate current model, temperature effect model and non quasi-static model. MOSFET Modeling & BSIM3 User's Guide not only addresses the device modeling issues but also provides a user's guide to the device or circuit design engineers who use the BSIM3 model in digital/analog circuit design, RF modeling, statistical modeling, and technology prediction. This book is written for circuit designers and device engineers, as well as device scientists worldwide. It is also suitable as a reference for graduate courses and courses in circuit design or device modelling. Furthermore, it can be used as a textbook for industry courses devoted to BSIM3. MOSFET Modeling & BSIM3 User's Guide is comprehensive and practical. It is balanced between the background information and advanced discussion of BSIM3. It is helpful to experts and students alike.

Introduction to Thin Film Transistors

Author : S.D. Brotherton
Publisher : Springer Science & Business Media
ISBN 13 : 3319000020
Total Pages : 467 pages
Book Rating : 4.3/5 (19 download)

DOWNLOAD NOW!

Book Synopsis Introduction to Thin Film Transistors by : S.D. Brotherton

Download or read book Introduction to Thin Film Transistors written by S.D. Brotherton and published by Springer Science & Business Media. This book was released on 2013-04-16 with total page 467 pages. Available in PDF, EPUB and Kindle. Book excerpt: Introduction to Thin Film Transistors reviews the operation, application and technology of the main classes of thin film transistor (TFT) of current interest for large area electronics. The TFT materials covered include hydrogenated amorphous silicon (a-Si:H), poly-crystalline silicon (poly-Si), transparent amorphous oxide semiconductors (AOS), and organic semiconductors. The large scale manufacturing of a-Si:H TFTs forms the basis of the active matrix flat panel display industry. Poly-Si TFTs facilitate the integration of electronic circuits into portable active matrix liquid crystal displays, and are increasingly used in active matrix organic light emitting diode (AMOLED) displays for smart phones. The recently developed AOS TFTs are seen as an alternative option to poly-Si and a-Si:H for AMOLED TV and large AMLCD TV applications, respectively. The organic TFTs are regarded as a cost effective route into flexible electronics. As well as treating the highly divergent preparation and properties of these materials, the physics of the devices fabricated from them is also covered, with emphasis on performance features such as carrier mobility limitations, leakage currents and instability mechanisms. The thin film transistors implemented with these materials are the conventional, insulated gate field effect transistors, and a further chapter describes a new thin film transistor structure: the source gated transistor, SGT. The driving force behind much of the development of TFTs has been their application to AMLCDs, and there is a chapter dealing with the operation of these displays, as well as of AMOLED and electrophoretic displays. A discussion of TFT and pixel layout issues is also included. For students and new-comers to the field, introductory chapters deal with basic semiconductor surface physics, and with classical MOSFET operation. These topics are handled analytically, so that the underlying device physics is clearly revealed. These treatments are then used as a reference point, from which the impact of additional band-gap states on TFT behaviour can be readily appreciated. This reference book, covering all the major TFT technologies, will be of interest to a wide range of scientists and engineers in the large area electronics industry. It will also be a broad introduction for research students and other scientists entering the field, as well as providing an accessible and comprehensive overview for undergraduate and postgraduate teaching programmes.

Atomic Layer Deposition for Semiconductors

Author : Cheol Seong Hwang
Publisher : Springer Science & Business Media
ISBN 13 : 146148054X
Total Pages : 266 pages
Book Rating : 4.4/5 (614 download)

DOWNLOAD NOW!

Book Synopsis Atomic Layer Deposition for Semiconductors by : Cheol Seong Hwang

Download or read book Atomic Layer Deposition for Semiconductors written by Cheol Seong Hwang and published by Springer Science & Business Media. This book was released on 2013-10-18 with total page 266 pages. Available in PDF, EPUB and Kindle. Book excerpt: Offering thorough coverage of atomic layer deposition (ALD), this book moves from basic chemistry of ALD and modeling of processes to examine ALD in memory, logic devices and machines. Reviews history, operating principles and ALD processes for each device.

Modelling, Simulation and Intelligent Computing

Author : Nilesh Goel
Publisher : Springer Nature
ISBN 13 : 9811547750
Total Pages : 650 pages
Book Rating : 4.8/5 (115 download)

DOWNLOAD NOW!

Book Synopsis Modelling, Simulation and Intelligent Computing by : Nilesh Goel

Download or read book Modelling, Simulation and Intelligent Computing written by Nilesh Goel and published by Springer Nature. This book was released on 2020-07-28 with total page 650 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book presents articles from the International Conference on Modelling, Simulation and Intelligent Computing (MoSICom 2020), held at Birla Institute of Technology and Science Pilani, Dubai Campus, Dubai, UAE, in January 2020. Modelling and simulation are becoming increasingly important in a wide variety of fields, from Signal, Image and Speech Processing, and Microelectronic Devices and Circuits to Intelligent Techniques, Control and Energy Systems, and Power Electronics. Further, Intelligent Computational techniques are gaining significance in interdisciplinary engineering applications, such as Robotics and Automation, Healthcare Technologies, IoT and its Applications. Featuring the latest advances in the field of engineering applications, this book serves as a definitive reference resource for researchers, professors and practitioners interested in exploring advanced techniques in the field of modelling, simulation and computing.