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Nanoscale Transistors
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Book Synopsis Nanoscale Transistors by : Mark Lundstrom
Download or read book Nanoscale Transistors written by Mark Lundstrom and published by Springer Science & Business Media. This book was released on 2006-06-18 with total page 223 pages. Available in PDF, EPUB and Kindle. Book excerpt: To push MOSFETs to their scaling limits and to explore devices that may complement or even replace them at molecular scale, a clear understanding of device physics at nanometer scale is necessary. Nanoscale Transistors provides a description on the recent development of theory, modeling, and simulation of nanotransistors for electrical engineers, physicists, and chemists working on nanoscale devices. Simple physical pictures and semi-analytical models, which were validated by detailed numerical simulations, are provided for both evolutionary and revolutionary nanotransistors. After basic concepts are reviewed, the text summarizes the essentials of traditional semiconductor devices, digital circuits, and systems to supply a baseline against which new devices can be assessed. A nontraditional view of the MOSFET using concepts that are valid at nanoscale is developed and then applied to nanotube FET as an example of how to extend the concepts to revolutionary nanotransistors. This practical guide then explore the limits of devices by discussing conduction in single molecules
Book Synopsis Nanoscale MOS Transistors by : David Esseni
Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results
Book Synopsis Handbook of Nanoscale Optics and Electronics by :
Download or read book Handbook of Nanoscale Optics and Electronics written by and published by Academic Press. This book was released on 2010-05-25 with total page 560 pages. Available in PDF, EPUB and Kindle. Book excerpt: With the increasing demand for smaller, faster, and more highly integrated optical and electronic devices, as well as extremely sensitive detectors for biomedical and environmental applications, a field called nano-optics or nano-photonics/electronics is emerging – studying the many promising optical properties of nanostructures. Like nanotechnology itself, it is a rapidly evolving and changing field – but because of strong research activity in optical communication and related devices, combined with the intensive work on nanotechnology, nano-optics is shaping up fast to be a field with a promising future. This book serves as a one-stop review of modern nano-optical/photonic and nano-electronic techniques, applications, and developments. Provides overview of the field of Nano-optics/photonics and electronics, detailing practical examples of photonic technology in a wide range of applications Discusses photonic systems and devices with mathematical rigor precise enough for design purposes A one-stop review of modern nano-optical/photonic and nano-electronic techniques, applications, and developments.
Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya
Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-06-13 with total page 248 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds
Book Synopsis Nanoscale Field Effect Transistors: Emerging Applications by : Ekta Goel, Archana Pandey
Download or read book Nanoscale Field Effect Transistors: Emerging Applications written by Ekta Goel, Archana Pandey and published by Bentham Science Publishers. This book was released on 2023-12-20 with total page 212 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale Field Effect Transistors: Emerging Applications is a comprehensive guide to understanding, simulating, and applying nanotechnology for design and development of specialized transistors. This book provides in-depth information on the modeling, simulation, characterization, and fabrication of semiconductor FET transistors. The book contents are structured into chapters that explain concepts with simple language and scientific references. The core of the book revolves around the fundamental physics that underlie the design of solid-state nanostructures and the optimization of these nanoscale devices for real-time applications. Readers will learn how to achieve superior performance in terms of reduced size and weight, enhanced subthreshold characteristics, improved switching efficiency, and minimal power consumption. Key Features: Quick summaries: Each chapter provides an introduction and summary to explain concepts in a concise manner. In-Depth Analysis: This book provides an extensive exploration of the theory and practice of nanoscale materials and devices, offering a detailed understanding of the technical aspects of Nano electronic FET transistors. Multidisciplinary Approach: It discusses various aspects of nanoscale materials and devices for applications such as quantum computation, biomedical applications, energy generation and storage, environmental protection, and more. It showcases how nanoscale FET devices are reshaping multiple industries. References: Chapters include references that encourage advanced readers to further explore key topics. Designed for a diverse audience, this book caters to students, academics and advanced readers interested in learning about Nano FET devices. Readership Students, academics and advanced readers
Book Synopsis Fundamentals of Nanotransistors by : Mark Lundstrom
Download or read book Fundamentals of Nanotransistors written by Mark Lundstrom and published by World Scientific Publishing Company. This book was released on 2017-07-11 with total page 388 pages. Available in PDF, EPUB and Kindle. Book excerpt: The transistor is the key enabler of modern electronics. Progress in transistor scaling has pushed channel lengths to the nanometer regime where traditional approaches to device physics are less and less suitable. These lectures describe a way of understanding MOSFETs and other transistors that is much more suitable than traditional approaches when the critical dimensions are measured in nanometers. It uses a novel, “bottom-up approach” that agrees with traditional methods when devices are large, but that also works for nano-devices. Surprisingly, the final result looks much like the traditional, textbook, transistor models, but the parameters in the equations have simple, clear interpretations at the nanoscale. The objective is to provide readers with an understanding of the essential physics of nanoscale transistors as well as some of the practical technological considerations and fundamental limits. This book is written in a way that is broadly accessible to students with only a very basic knowledge of semiconductor physics and electronic circuits. Complemented with online lecture by Prof Lundstrom: nanoHUB-U Nanoscale Transistor Contents:MOSFET Fundamentals:OverviewThe Transistor as a Black BoxThe MOSFET: A Barrier-Controlled DeviceMOSFET IV: Traditional ApproachMOSFET IV: The Virtual Source ModelMOS Electrostatics:Poisson Equation and the Depletion ApproximationGate Voltage and Surface PotentialMobile Charge: Bulk MOSMobile Charge: Extremely Thin SOI2D MOS ElectrostaticsThe VS Model RevisitedThe Ballistic MOSFET:The Landauer Approach to TransportThe Ballistic MOSFETThe Ballistic Injection VelocityConnecting the Ballistic and VS ModelsTransmission Theory of the MOSFET:Carrier Scattering and TransmissionTransmission Theory of the MOSFETConnecting the Transmission and VS ModelsVS Characterization of Transport in NanotransistorsLimits and Limitations Readership: Any student and professional with an undergraduate degree in the physical sciences or engineering.
Book Synopsis Fundamentals of Nanoscaled Field Effect Transistors by : Amit Chaudhry
Download or read book Fundamentals of Nanoscaled Field Effect Transistors written by Amit Chaudhry and published by Springer Science & Business Media. This book was released on 2013-04-23 with total page 211 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fundamentals of Nanoscaled Field Effect Transistors gives comprehensive coverage of the fundamental physical principles and theory behind nanoscale transistors. The specific issues that arise for nanoscale MOSFETs, such as quantum mechanical tunneling and inversion layer quantization, are fully explored. The solutions to these issues, such as high-κ technology, strained-Si technology, alternate devices structures and graphene technology are also given. Some case studies regarding the above issues and solution are also given in the book.
Book Synopsis Nanoscale Device Physics by : Sandip Tiwari
Download or read book Nanoscale Device Physics written by Sandip Tiwari and published by Oxford University Press. This book was released on 2017-03-31 with total page 682 pages. Available in PDF, EPUB and Kindle. Book excerpt: Nanoscale devices differ from larger microscale devices because they depend on the physical phenomena and effects that are central to their operation. This textbook illuminates the behavior of nanoscale devices by connecting them to the electronic, as well as magnetic, optical and mechanical properties, which fundamentally affect nanoscale devices in fascinating ways. Their small size means that an understanding of the phenomena measured is even more important, as their effects are so dominant and the changes in scale of underlying energetics and response are significant. Examples of these include classical effects such as single electron effects, quantum effects such as the states accessible as well as their properties; ensemble effects ranging from consequences of the laws of numbers to changes in properties arising from different magnitudes of the interactions, and others. These interactions, with the limits on size, make their physical behavior interesting, important and useful. The collection of four textbooks in the Electroscience Series culminates in a comprehensive understanding of nanoscale devices — electronic, magnetic, mechanical and optical — in the 4th volume. The series builds up to this last subject with volumes devoted to underlying semiconductor and solid-state physics.
Book Synopsis Introduction to Nanoscale Science and Technology by : Massimiliano Ventra
Download or read book Introduction to Nanoscale Science and Technology written by Massimiliano Ventra and published by Springer Science & Business Media. This book was released on 2006-04-11 with total page 611 pages. Available in PDF, EPUB and Kindle. Book excerpt: From the reviews: "...A class in nanoscale science and technology is daunting for the educator, who must organize a large collection of materials to cover the field, and for the student, who must absorb all the new concepts. This textbook is an excellent resource that allows students from any engineering background to quickly understand the foundations and exciting advances of the field. The example problems with answers and the long list of references in each chapter are a big plus for course tutors. The book is organized into seven sections. The first, nanoscale fabrication and characterization, covers nanolithography, self-assembly, and scanning probe microscopy. Of these, we enjoyed the section on nanolithography most, as it includes many interesting details from industrial manufacturing processes. The chapter on self-assembly also provides an excellent overview by introducing six types of intermolecular interactions and the ways these can be employed to fabricate nanostructures. The second section covers nanomaterials and nanostructures. Out of its 110 pages, 45 are devoted to carbon nanotubes. Fullerenes and quantum dots each have their own chapter that focuses on the properties and applications of these nanostructures. Nanolayer, nanowire, and nanoparticle composites of metals and semiconductors are briefly covered (just 12 pages), with slightly more discussion of specific applications. The section on nanoscale electronics begins with a history of microelectronics before discussing the difficulties in shrinking transistor size further. The discussion of problems (leakage current, hot electrons, doping fluctuations, etc.) and possible solutions (high- k dielectrics, double-gate devices) could easily motivate deeper discussions of nanoscale electrical transport. A chapter on molecular electronics considers transport through alkanes, molecular transistors, and DNA in a simple, qualitative manner we found highly instructive. Nanoscale magnetic systems are examined in the fourth section. The concept of quantum computation is nicely presented, although the discussion of how this can be achieved with controlled spin states is (perhaps necessarily) not clear. We found the chapter on magnetic storage to be one of the most lucid in the book. The giant magnetoresistive effect, operation of spin valves, and issues in magnetic scaling are easier to understand when placed in the context of the modern magnetic hard disk drive. Micro- and nanoelectromechanical systems are covered with an emphasis on the integration of sensing, computation, and communication. Here, the student can see advanced applications of lithography. The sixth section, nanoscale optoelectronics, describes quantum dots, organic optoelectronics, and photonic crystals. The chapter on organic optoelectronics is especially clear in its discussion of the fundamentals of this complicated field. The book concludes with an overview of nanobiotechnology that covers biomimetics, biomolecular motors, and nanofluidics. Because so many authors have contributed to this textbook, it suffers a bit from repetition. However, this also allows sections to be omitted without any adverse effect on student comprehension. We would have liked to see more technology to balance the science; apart from the chapters on lithography and magnetic storage, little more than an acknowledgment is given to commercial applications. Overall, this book serves as an excellent starting point for the study of nanoscale science and technology, and we recommend it to anyone with a modest scientific background. It is also a great vehicle to motivate the study of science at a time when interest is waning. Nanotechnology educators should look no further." (MATERIALS TODAY, June 2005)
Book Synopsis Carbon-Based Electronics by : Ashok Srivastava
Download or read book Carbon-Based Electronics written by Ashok Srivastava and published by CRC Press. This book was released on 2015-03-19 with total page 156 pages. Available in PDF, EPUB and Kindle. Book excerpt: Discovery of one-dimensional material carbon nanotubes in 1991 by the Japanese physicist Dr. Sumio Iijima has resulted in voluminous research in the field of carbon nanotubes for numerous applications, including possible replacement of silicon used in the fabrication of CMOS chips. One interesting feature of carbon nanotubes is that these can be metallic or semiconducting with a bandgap depending on their diameter. In search of non-classical devices and related technologies, both carbon nanotube-based field-effect transistors and metallic carbon nanotube interconnects are being explored extensively for emerging logic devices and very large-scale integration. Although various models for carbon nanotube-based transistors and interconnects have been proposed in the literature, an integrated approach to make them compatible with the present simulators is yet to be achieved. This book makes an attempt in this direction for the carbon-based electronics through fundamentals of solid-state physics and devices.
Book Synopsis Nanoscale Organic Thin Film Transistors by : Yuanjia Zhang
Download or read book Nanoscale Organic Thin Film Transistors written by Yuanjia Zhang and published by . This book was released on 2006 with total page 318 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Nanoscale Silicon Devices by : Shunri Oda
Download or read book Nanoscale Silicon Devices written by Shunri Oda and published by CRC Press. This book was released on 2018-09-03 with total page 288 pages. Available in PDF, EPUB and Kindle. Book excerpt: Is Bigger Always Better? Explore the Behavior of Very Small Devices as Described by Quantum Mechanics Smaller is better when it comes to the semiconductor transistor. Nanoscale Silicon Devices examines the growth of semiconductor device miniaturization and related advances in material, device, circuit, and system design, and highlights the use of device scaling within the semiconductor industry. Device scaling, the practice of continuously scaling down the size of metal-oxide-semiconductor field-effect transistors (MOSFETs), has significantly improved the performance of small computers, mobile phones, and similar devices. The practice has resulted in smaller delay time and higher device density in a chip without an increase in power consumption. This book covers recent advancements and considers the future prospects of nanoscale silicon (Si) devices. It provides an introduction to new concepts (including variability in scaled MOSFETs, thermal effects, spintronics-based nonvolatile computing systems, spin-based qubits, magnetoelectric devices, NEMS devices, tunnel FETs, dopant engineering, and single-electron transfer), new materials (such as high-k dielectrics and germanium), and new device structures in three dimensions. It covers the fundamentals of such devices, describes the physics and modeling of these devices, and advocates further device scaling and minimization of energy consumption in future large-scale integrated circuits (VLSI). Additional coverage includes: Physics of nm scaled devices in terms of quantum mechanics Advanced 3D transistors: tri-gate structure and thermal effects Variability in scaled MOSFET Spintronics on Si platform NEMS devices for switching, memory, and sensor applications The concept of ballistic transport The present status of the transistor variability and more An indispensable resource, Nanoscale Silicon Devices serves device engineers and academic researchers (including graduate students) in the fields of electron devices, solid-state physics, and nanotechnology.
Book Synopsis Fundamentals Of Nanotransistors by : Mark S. Lundstrom
Download or read book Fundamentals Of Nanotransistors written by Mark S. Lundstrom and published by . This book was released on 2017 with total page 389 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis FinFETs and Other Multi-Gate Transistors by : J.-P. Colinge
Download or read book FinFETs and Other Multi-Gate Transistors written by J.-P. Colinge and published by Springer Science & Business Media. This book was released on 2008 with total page 350 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explains the physics and properties of multi-gate field-effect transistors (MuGFETs), how they are made and how circuit designers can use them to improve the performances of integrated circuits. It covers the emergence of quantum effects due to the reduced size of the devices and describes the evolution of the MOS transistor from classical structures to SOI (silicon-on-insulator) and then to MuGFETs.
Book Synopsis Low-Dimensional Nanoscale Electronic and Photonic Devices 4 by : L.-J. Chou
Download or read book Low-Dimensional Nanoscale Electronic and Photonic Devices 4 written by L.-J. Chou and published by The Electrochemical Society. This book was released on 2010-10 with total page 103 pages. Available in PDF, EPUB and Kindle. Book excerpt: The papers included in this issue of ECS Transactions were originally presented in the symposium ¿Low-Dimensional Nanoscale Electronic and Photonic Devices 4¿, held during the 218th meeting of The Electrochemical Society, in Las Vegas, Nevada from October 10 to 15, 2010.
Book Synopsis Miniaturized Transistors by : Lado Filipovic
Download or read book Miniaturized Transistors written by Lado Filipovic and published by MDPI. This book was released on 2019-06-24 with total page 202 pages. Available in PDF, EPUB and Kindle. Book excerpt: What is the future of CMOS? Sustaining increased transistor densities along the path of Moore's Law has become increasingly challenging with limited power budgets, interconnect bandwidths, and fabrication capabilities. In the last decade alone, transistors have undergone significant design makeovers; from planar transistors of ten years ago, technological advancements have accelerated to today's FinFETs, which hardly resemble their bulky ancestors. FinFETs could potentially take us to the 5-nm node, but what comes after it? From gate-all-around devices to single electron transistors and two-dimensional semiconductors, a torrent of research is being carried out in order to design the next transistor generation, engineer the optimal materials, improve the fabrication technology, and properly model future devices. We invite insight from investigators and scientists in the field to showcase their work in this Special Issue with research papers, short communications, and review articles that focus on trends in micro- and nanotechnology from fundamental research to applications.
Book Synopsis Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors by : Mengqi Fu
Download or read book Electrical Properties of Indium Arsenide Nanowires and Their Field-Effect Transistors written by Mengqi Fu and published by Springer. This book was released on 2018-11-29 with total page 102 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book explores the impacts of important material parameters on the electrical properties of indium arsenide (InAs) nanowires, which offer a promising channel material for low-power electronic devices due to their small bandgap and high electron mobility. Smaller diameter nanowires are needed in order to scale down electronic devices and improve their performance. However, to date the properties of thin InAs nanowires and their sensitivity to various factors were not known. The book presents the first study of ultrathin InAs nanowires with diameters below 10 nm are studied, for the first time, establishing the channel in field-effect transistors (FETs) and the correlation between nanowire diameter and device performance. Moreover, it develops a novel method for directly correlating the atomic-level structure with the properties of individual nanowires and their device performance. Using this method, the electronic properties of InAs nanowires and the performance of the FETs they are used in are found to change with the crystal phases (wurtzite, zinc-blend or a mix phase), the axis direction and the growth method. These findings deepen our understanding of InAs nanowires and provide a potential way to tailor device performance by controlling the relevant parameters of the nanowires and devices.
