Monte Carlo Simulation of Silicon-germanium Transistors

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ISBN 13 :
Total Pages : 0 pages
Book Rating : 4.:/5 (793 download)

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Book Synopsis Monte Carlo Simulation of Silicon-germanium Transistors by : Anucha Yangthiasong

Download or read book Monte Carlo Simulation of Silicon-germanium Transistors written by Anucha Yangthiasong and published by . This book was released on 2002 with total page 0 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Monte Carlo Simulation of Semiconductor Devices

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Publisher : Springer Science & Business Media
ISBN 13 : 9401581339
Total Pages : 343 pages
Book Rating : 4.4/5 (15 download)

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Book Synopsis Monte Carlo Simulation of Semiconductor Devices by : C. Moglestue

Download or read book Monte Carlo Simulation of Semiconductor Devices written by C. Moglestue and published by Springer Science & Business Media. This book was released on 2013-04-17 with total page 343 pages. Available in PDF, EPUB and Kindle. Book excerpt: Particle simulation of semiconductor devices is a rather new field which has started to catch the interest of the world's scientific community. It represents a time-continuous solution of Boltzmann's transport equation, or its quantum mechanical equivalent, and the field equation, without encountering the usual numerical problems associated with the direct solution. The technique is based on first physical principles by following in detail the transport histories of indi vidual particles and gives a profound insight into the physics of semiconductor devices. The method can be applied to devices of any geometrical complexity and material composition. It yields an accurate description of the device, which is not limited by the assumptions made behind the alternative drift diffusion and hydrodynamic models, which represent approximate solutions to the transport equation. While the development of the particle modelling technique has been hampered in the past by the cost of computer time, today this should not be held against using a method which gives a profound physical insight into individual devices and can be used to predict the properties of devices not yet manufactured. Employed in this way it can save the developer much time and large sums of money, both important considerations for the laboratory which wants to keep abreast of the field of device research. Applying it to al ready existing electronic components may lead to novel ideas for their improvement. The Monte Carlo particle simulation technique is applicable to microelectronic components of any arbitrary shape and complexity.

Full-band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs

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ISBN 13 : 9783896498984
Total Pages : 79 pages
Book Rating : 4.4/5 (989 download)

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Book Synopsis Full-band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs by : Fabian M. Bufler

Download or read book Full-band Monte Carlo Simulation of Nanoscale Strained Silicon MOSFETs written by Fabian M. Bufler and published by . This book was released on 2003 with total page 79 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications

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Publisher : CRC Press
ISBN 13 : 1000794407
Total Pages : 377 pages
Book Rating : 4.0/5 (7 download)

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Book Synopsis Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications by : Niccolò Rinaldi

Download or read book Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications written by Niccolò Rinaldi and published by CRC Press. This book was released on 2022-09-01 with total page 377 pages. Available in PDF, EPUB and Kindle. Book excerpt: The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.

The Monte Carlo Method for Semiconductor Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709169631
Total Pages : 370 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis The Monte Carlo Method for Semiconductor Device Simulation by : Carlo Jacoboni

Download or read book The Monte Carlo Method for Semiconductor Device Simulation written by Carlo Jacoboni and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 370 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume presents the application of the Monte Carlo method to the simulation of semiconductor devices, reviewing the physics of transport in semiconductors, followed by an introduction to the physics of semiconductor devices.

Full-band Monte Carlo Simulation of Electron Transport in Silicon Germanium Compound

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Publisher :
ISBN 13 : 9789740510369
Total Pages : 146 pages
Book Rating : 4.5/5 (13 download)

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Book Synopsis Full-band Monte Carlo Simulation of Electron Transport in Silicon Germanium Compound by : Surachai Pengmanayol

Download or read book Full-band Monte Carlo Simulation of Electron Transport in Silicon Germanium Compound written by Surachai Pengmanayol and published by . This book was released on 2002 with total page 146 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe

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Publisher : Herbert Utz Verlag
ISBN 13 : 9783896752703
Total Pages : 196 pages
Book Rating : 4.7/5 (527 download)

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Book Synopsis Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe by : Fabian M. Bufler

Download or read book Full-band Monte Carlo Simulation of Electrons and Holes in Strained Si and SiGe written by Fabian M. Bufler and published by Herbert Utz Verlag. This book was released on 1998 with total page 196 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Hierarchical Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709160863
Total Pages : 278 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann

Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Applications of Silicon-Germanium Heterostructure Devices

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Publisher : CRC Press
ISBN 13 : 1420034693
Total Pages : 402 pages
Book Rating : 4.4/5 (2 download)

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Book Synopsis Applications of Silicon-Germanium Heterostructure Devices by : C.K Maiti

Download or read book Applications of Silicon-Germanium Heterostructure Devices written by C.K Maiti and published by CRC Press. This book was released on 2001-07-20 with total page 402 pages. Available in PDF, EPUB and Kindle. Book excerpt: The first book to deal with the design and optimization of transistors made from strained layers, Applications of Silicon-Germanium Heterostructure Devices combines three distinct topics-technology, device design and simulation, and applications-in a comprehensive way. Important aspects of the book include key technology issues for the growth of st

Monte Carlo Device Simulation

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Publisher : Springer
ISBN 13 : 9781461368007
Total Pages : 310 pages
Book Rating : 4.3/5 (68 download)

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Book Synopsis Monte Carlo Device Simulation by : Karl Hess

Download or read book Monte Carlo Device Simulation written by Karl Hess and published by Springer. This book was released on 2012-10-11 with total page 310 pages. Available in PDF, EPUB and Kindle. Book excerpt: Monte Carlo simulation is now a well established method for studying semiconductor devices and is particularly well suited to highlighting physical mechanisms and exploring material properties. Not surprisingly, the more completely the material properties are built into the simulation, up to and including the use of a full band structure, the more powerful is the method. Indeed, it is now becoming increasingly clear that phenomena such as reliabil ity related hot-electron effects in MOSFETs cannot be understood satisfac torily without using full band Monte Carlo. The IBM simulator DAMOCLES, therefore, represents a landmark of great significance. DAMOCLES sums up the total of Monte Carlo device modeling experience of the past, and reaches with its capabilities and opportunities into the distant future. This book, therefore, begins with a description of the IBM simulator. The second chapter gives an advanced introduction to the physical basis for Monte Carlo simulations and an outlook on why complex effects such as collisional broadening and intracollisional field effects can be important and how they can be included in the simulations. References to more basic intro the book. The third chapter ductory material can be found throughout describes a typical relationship of Monte Carlo simulations to experimental data and indicates a major difficulty, the vast number of deformation poten tials required to simulate transport throughout the entire Brillouin zone. The fourth chapter addresses possible further extensions of the Monte Carlo approach and subtleties of the electron-electron interaction.

Monte Carlo Simulations for Small Silicon and Germanium Detectors Under Compton-Suppression Geometry

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ISBN 13 :
Total Pages : 242 pages
Book Rating : 4.:/5 (33 download)

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Book Synopsis Monte Carlo Simulations for Small Silicon and Germanium Detectors Under Compton-Suppression Geometry by : Jun Miyamoto

Download or read book Monte Carlo Simulations for Small Silicon and Germanium Detectors Under Compton-Suppression Geometry written by Jun Miyamoto and published by . This book was released on 1993 with total page 242 pages. Available in PDF, EPUB and Kindle. Book excerpt:

The Wigner Monte Carlo Method for Nanoelectronic Devices

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Publisher : John Wiley & Sons
ISBN 13 : 1118618440
Total Pages : 191 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis The Wigner Monte Carlo Method for Nanoelectronic Devices by : Damien Querlioz

Download or read book The Wigner Monte Carlo Method for Nanoelectronic Devices written by Damien Querlioz and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 191 pages. Available in PDF, EPUB and Kindle. Book excerpt: The emergence of nanoelectronics has led us to renew the concepts of transport theory used in semiconductor device physics and the engineering community. It has become crucial to question the traditional semi-classical view of charge carrier transport and to adequately take into account the wave-like nature of electrons by considering not only their coherent evolution but also the out-of-equilibrium states and the scattering effects. This book gives an overview of the quantum transport approaches for nanodevices and focuses on the Wigner formalism. It details the implementation of a particle-based Monte Carlo solution of the Wigner transport equation and how the technique is applied to typical devices exhibiting quantum phenomena, such as the resonant tunnelling diode, the ultra-short silicon MOSFET and the carbon nanotube transistor. In the final part, decoherence theory is used to explain the emergence of the semi-classical transport in nanodevices.

Deterministic Solvers for the Boltzmann Transport Equation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709107784
Total Pages : 235 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Deterministic Solvers for the Boltzmann Transport Equation by : Sung-Min Hong

Download or read book Deterministic Solvers for the Boltzmann Transport Equation written by Sung-Min Hong and published by Springer Science & Business Media. This book was released on 2011-07-31 with total page 235 pages. Available in PDF, EPUB and Kindle. Book excerpt: The book covers all aspects from the expansion of the Boltzmann transport equation with harmonic functions to application to devices, where transport in the bulk and in inversion layers is considered. The important aspects of stabilization and band structure mapping are discussed in detail. This is done not only for the full band structure of the 3D k-space, but also for the warped band structure of the quasi 2D hole gas. Efficient methods for building the Schrödinger equation for arbitrary surface or strain directions, gridding of the 2D k-space and solving it together with the other two equations are presented.

Monte Carlo Simulation of Electron Transport in Silicon Bipolar Transistors

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ISBN 13 :
Total Pages : 108 pages
Book Rating : 4.:/5 (271 download)

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Book Synopsis Monte Carlo Simulation of Electron Transport in Silicon Bipolar Transistors by : Mark A. Stettler

Download or read book Monte Carlo Simulation of Electron Transport in Silicon Bipolar Transistors written by Mark A. Stettler and published by . This book was released on 1990 with total page 108 pages. Available in PDF, EPUB and Kindle. Book excerpt: Abstract: "The theory and formulation of a one-dimensional silicon Monte Carlo device simulation program is described. The program includes a multivalley, nonparabolic bandstructure model and takes into account scattering by inelastic acoustic phonons, intervalley phonons, and ionized impurities. Transport in arbitrarily defined silicon devices can be solved self-consistently with Poisson's equation. The model is verified by the reproduction of various experimental and theoretical results, and transport is investigated in realistic bipolar transistors. Comparisons are made between the Monte Carlo results and those given by a model based upon the drift-diffusion equations."

Carrier Transport in Nanoscale MOS Transistors

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Publisher : John Wiley & Sons
ISBN 13 : 1118871715
Total Pages : 444 pages
Book Rating : 4.1/5 (188 download)

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Book Synopsis Carrier Transport in Nanoscale MOS Transistors by : Hideaki Tsuchiya

Download or read book Carrier Transport in Nanoscale MOS Transistors written by Hideaki Tsuchiya and published by John Wiley & Sons. This book was released on 2017-05-02 with total page 444 pages. Available in PDF, EPUB and Kindle. Book excerpt: A comprehensive advanced level examination of the transport theory of nanoscale devices Provides advanced level material of electron transport in nanoscale devices from basic principles of quantum mechanics through to advanced theory and various numerical techniques for electron transport Combines several up-to-date theoretical and numerical approaches in a unified manner, such as Wigner-Boltzmann equation, the recent progress of carrier transport research for nanoscale MOS transistors, and quantum correction approximations The authors approach the subject in a logical and systematic way, reflecting their extensive teaching and research backgrounds

Simulation of Semiconductor Processes and Devices 2004

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Publisher : Springer Science & Business Media
ISBN 13 : 3709106249
Total Pages : 387 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Simulation of Semiconductor Processes and Devices 2004 by : Gerhard Wachutka

Download or read book Simulation of Semiconductor Processes and Devices 2004 written by Gerhard Wachutka and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 387 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains the proceedings of the 10th edition of the International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 2004), held in Munich, Germany, on September 2-4, 2004. The conference program included 7 invited plenary lectures and 82 contributed papers for oral or poster presentation, which were carefully selected out of a total of 151 abstracts submitted from 14 countries around the world. Like the previous meetings, SISPAD 2004 provided a world-wide forum for the presentation and discussion of recent advances and developments in the theoretical description, physical modeling and numerical simulation and analysis of semiconductor fabrication processes, device operation and system performance. The variety of topics covered by the conference contributions reflects the physical effects and technological problems encountered in consequence of the progressively shrinking device dimensions and the ever-growing complexity in device technology.

Monte Carlo Simulation of Silicon Devices

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ISBN 13 :
Total Pages : 74 pages
Book Rating : 4.:/5 (534 download)

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Book Synopsis Monte Carlo Simulation of Silicon Devices by : Gulzar Ahmed Kathawala

Download or read book Monte Carlo Simulation of Silicon Devices written by Gulzar Ahmed Kathawala and published by . This book was released on 2003 with total page 74 pages. Available in PDF, EPUB and Kindle. Book excerpt: