Theory of Transport Properties of Semiconductor Nanostructures

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Publisher : Springer Science & Business Media
ISBN 13 : 1461558077
Total Pages : 394 pages
Book Rating : 4.4/5 (615 download)

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Book Synopsis Theory of Transport Properties of Semiconductor Nanostructures by : Eckehard Schöll

Download or read book Theory of Transport Properties of Semiconductor Nanostructures written by Eckehard Schöll and published by Springer Science & Business Media. This book was released on 2013-11-27 with total page 394 pages. Available in PDF, EPUB and Kindle. Book excerpt: Recent advances in the fabrication of semiconductors have created almost un limited possibilities to design structures on a nanometre scale with extraordinary electronic and optoelectronic properties. The theoretical understanding of elec trical transport in such nanostructures is of utmost importance for future device applications. This represents a challenging issue of today's basic research since it requires advanced theoretical techniques to cope with the quantum limit of charge transport, ultrafast carrier dynamics and strongly nonlinear high-field ef fects. This book, which appears in the electronic materials series, presents an over view of the theoretical background and recent developments in the theory of electrical transport in semiconductor nanostructures. It contains 11 chapters which are written by experts in their fields. Starting with a tutorial introduction to the subject in Chapter 1, it proceeds to present different approaches to transport theory. The semiclassical Boltzmann transport equation is in the centre of the next three chapters. Hydrodynamic moment equations (Chapter 2), Monte Carlo techniques (Chapter 3) and the cellular au tomaton approach (Chapter 4) are introduced and illustrated with applications to nanometre structures and device simulation. A full quantum-transport theory covering the Kubo formalism and nonequilibrium Green's functions (Chapter 5) as well as the density matrix theory (Chapter 6) is then presented.

Dissertation Abstracts International

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Publisher :
ISBN 13 :
Total Pages : 662 pages
Book Rating : 4.F/5 ( download)

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Book Synopsis Dissertation Abstracts International by :

Download or read book Dissertation Abstracts International written by and published by . This book was released on 1998 with total page 662 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanoscale CMOS

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Publisher : John Wiley & Sons
ISBN 13 : 1118622472
Total Pages : 518 pages
Book Rating : 4.1/5 (186 download)

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Book Synopsis Nanoscale CMOS by : Francis Balestra

Download or read book Nanoscale CMOS written by Francis Balestra and published by John Wiley & Sons. This book was released on 2013-03-01 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides a comprehensive review of the state-of-the-art in the development of new and innovative materials, and of advanced modeling and characterization methods for nanoscale CMOS devices. Leading global industry bodies including the International Technology Roadmap for Semiconductors (ITRS) have created a forecast of performance improvements that will be delivered in the foreseeable future – in the form of a roadmap that will lead to a substantial enlargement in the number of materials, technologies and device architectures used in CMOS devices. This book addresses the field of materials development, which has been the subject of a major research drive aimed at finding new ways to enhance the performance of semiconductor technologies. It covers three areas that will each have a dramatic impact on the development of future CMOS devices: global and local strained and alternative materials for high speed channels on bulk substrate and insulator; very low access resistance; and various high dielectric constant gate stacks for power scaling. The book also provides information on the most appropriate modeling and simulation methods for electrical properties of advanced MOSFETs, including ballistic transport, gate leakage, atomistic simulation, and compact models for single and multi-gate devices, nanowire and carbon-based FETs. Finally, the book presents an in-depth investigation of the main nanocharacterization techniques that can be used for an accurate determination of transport parameters, interface defects, channel strain as well as RF properties, including capacitance-conductance, improved split C-V, magnetoresistance, charge pumping, low frequency noise, and Raman spectroscopy.

A Self-consistent Hartree Model of Charge-voltage and Capacitance-voltage in MOS Structures

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Publisher :
ISBN 13 :
Total Pages : 192 pages
Book Rating : 4.E/5 ( download)

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Book Synopsis A Self-consistent Hartree Model of Charge-voltage and Capacitance-voltage in MOS Structures by : Kevin Kourosh Dezfulian

Download or read book A Self-consistent Hartree Model of Charge-voltage and Capacitance-voltage in MOS Structures written by Kevin Kourosh Dezfulian and published by . This book was released on 2001 with total page 192 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Nanoscale MOS Transistors

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Publisher : Cambridge University Press
ISBN 13 : 1139494384
Total Pages : 489 pages
Book Rating : 4.1/5 (394 download)

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Book Synopsis Nanoscale MOS Transistors by : David Esseni

Download or read book Nanoscale MOS Transistors written by David Esseni and published by Cambridge University Press. This book was released on 2011-01-20 with total page 489 pages. Available in PDF, EPUB and Kindle. Book excerpt: Written from an engineering standpoint, this book provides the theoretical background and physical insight needed to understand new and future developments in the modeling and design of n- and p-MOS nanoscale transistors. A wealth of applications, illustrations and examples connect the methods described to all the latest issues in nanoscale MOSFET design. Key areas covered include: • Transport in arbitrary crystal orientations and strain conditions, and new channel and gate stack materials • All the relevant transport regimes, ranging from low field mobility to quasi-ballistic transport, described using a single modeling framework • Predictive capabilities of device models, discussed with systematic comparisons to experimental results

American Doctoral Dissertations

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Publisher :
ISBN 13 :
Total Pages : 872 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis American Doctoral Dissertations by :

Download or read book American Doctoral Dissertations written by and published by . This book was released on 1996 with total page 872 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Advanced Device Modeling and Simulation

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Publisher : World Scientific
ISBN 13 : 9789812386076
Total Pages : 220 pages
Book Rating : 4.3/5 (86 download)

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Book Synopsis Advanced Device Modeling and Simulation by : Tibor Grasser

Download or read book Advanced Device Modeling and Simulation written by Tibor Grasser and published by World Scientific. This book was released on 2003 with total page 220 pages. Available in PDF, EPUB and Kindle. Book excerpt: Microelectronics is one of the most rapidly changing scientific fields today. The tendency to shrink devices as far as possible results in extremely small devices which can no longer be described using simple analytical models. This book covers various aspects of advanced device modeling and simulation. As such it presents extensive reviews and original research by outstanding scientists. The bulk of the book is concerned with the theory of classical and quantum-mechanical transport modeling, based on macroscopic, spherical harmonics and Monte Carlo methods.

Hot Carriers in Semiconductors

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Publisher : Springer Science & Business Media
ISBN 13 : 1461304016
Total Pages : 575 pages
Book Rating : 4.4/5 (613 download)

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Book Synopsis Hot Carriers in Semiconductors by : Karl Hess

Download or read book Hot Carriers in Semiconductors written by Karl Hess and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 575 pages. Available in PDF, EPUB and Kindle. Book excerpt: This volume contains invited and contributed papers of the Ninth International Conference on Hot Carriers in Semiconductors (HCIS-9), held July 3 I-August 4, 1995 in Chicago, Illinois. In all, the conference featured 15 invited oral presentations, 60 contributed oral presentations, and 105 poster presentations, and an international contingent of 170 scientists. As in recent conferences, the main themes of the conference were related to nonlinear transport in semiconductor heterojunctions and included Bloch oscillations, laser diode structures, and femtosecond spectroscopy. Interesting questions related to nonlinear transport, size quantization, and intersubband scattering were addressed that are relevant to the new quantum cascade laser. Many lectures were geared toward quantum wires and dots and toward nanostructures and mesoscopic systems in general. It is expected that such research will open new horizons to nonlinear transport studies. An attempt was made by the program committee to increase the number of presen tations related directly to devices. The richness of nonlocal hot electron effects that were discussed as a result, in our opinion, suggests that future conferences should further encourage reports on such device research. On behalf of the Program and International Advisory Committees, we thank the participants, who made the conference a successful and pleasant experience, and the support of the Army Research Office, the Office of Naval Research, and the Beckman Institute of the University of Illinois at Urbana-Champaign. We are also indebted to Mrs. Sara Starkey and Mrs.

Hot Carrier Degradation in Semiconductor Devices

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Publisher : Springer
ISBN 13 : 3319089943
Total Pages : 518 pages
Book Rating : 4.3/5 (19 download)

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Book Synopsis Hot Carrier Degradation in Semiconductor Devices by : Tibor Grasser

Download or read book Hot Carrier Degradation in Semiconductor Devices written by Tibor Grasser and published by Springer. This book was released on 2014-10-29 with total page 518 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book provides readers with a variety of tools to address the challenges posed by hot carrier degradation, one of today’s most complicated reliability issues in semiconductor devices. Coverage includes an explanation of carrier transport within devices and book-keeping of how they acquire energy (“become hot”), interaction of an ensemble of colder and hotter carriers with defect precursors, which eventually leads to the creation of a defect, and a description of how these defects interact with the device, degrading its performance.

Future Trends in Microelectronics

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Publisher : Springer Science & Business Media
ISBN 13 : 9400917465
Total Pages : 417 pages
Book Rating : 4.4/5 (9 download)

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Book Synopsis Future Trends in Microelectronics by : S. Luryi

Download or read book Future Trends in Microelectronics written by S. Luryi and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 417 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon technology has developed along virtually one single line: reducing the minimal size of lithographic features. But has this taken us to the point of diminishing returns? Are we now at a turning point in the logical evolution of microelectronics? Some believe that the semiconductor microelectronics industry has matured: the research game is over (comparisons with the steel industry are being made). Others believe that qualitative progress in hardware technology will come roaring back, based on innovative research. This debate, spirited as it is, is reflected in the pages of Future Trends in Microelectronics, where such questions are discussed. What kind of research does the silicon industry need to continue its expansion? What is the technical limit to shrinking Si devices? Is there any economic sense in pursuing this limit? What are the most attractive applications of optoelectronic hybrid systems? Are there any green pastures beyond the traditional semiconductor technologies? Identifying the scenario for the future evolution of microelectronics will present a tremendous opportunity for constructive action today.

Hierarchical Device Simulation

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Publisher : Springer Science & Business Media
ISBN 13 : 3709160863
Total Pages : 278 pages
Book Rating : 4.7/5 (91 download)

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Book Synopsis Hierarchical Device Simulation by : Christoph Jungemann

Download or read book Hierarchical Device Simulation written by Christoph Jungemann and published by Springer Science & Business Media. This book was released on 2012-12-06 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt: This monograph is the first on physics-based simulations of novel strained Si and SiGe devices. It provides an in-depth description of the full-band monte-carlo method for SiGe and discusses the common theoretical background of the drift-diffusion, hydrodynamic and Monte-Carlo models and their synergy.

Electrical & Electronics Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1948 pages
Book Rating : 4.3/5 (243 download)

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Download or read book Electrical & Electronics Abstracts written by and published by . This book was released on 1997 with total page 1948 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Science Abstracts

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Publisher :
ISBN 13 :
Total Pages : 1360 pages
Book Rating : 4.3/5 (243 download)

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Book Synopsis Science Abstracts by :

Download or read book Science Abstracts written by and published by . This book was released on 1995 with total page 1360 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Silicon-on-Insulator Technology and Devices X

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Publisher : The Electrochemical Society
ISBN 13 : 9781566773096
Total Pages : 482 pages
Book Rating : 4.7/5 (73 download)

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Book Synopsis Silicon-on-Insulator Technology and Devices X by : Electrochemical Society. Electronics Division

Download or read book Silicon-on-Insulator Technology and Devices X written by Electrochemical Society. Electronics Division and published by The Electrochemical Society. This book was released on 2001 with total page 482 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Fully Depleted Silicon-On-Insulator

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Publisher : Elsevier
ISBN 13 : 0128231653
Total Pages : 386 pages
Book Rating : 4.1/5 (282 download)

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Book Synopsis Fully Depleted Silicon-On-Insulator by : Sorin Cristoloveanu

Download or read book Fully Depleted Silicon-On-Insulator written by Sorin Cristoloveanu and published by Elsevier. This book was released on 2021-08-04 with total page 386 pages. Available in PDF, EPUB and Kindle. Book excerpt: Fully Depleted Silicon-On-Insulator provides an in-depth presentation of the fundamental and pragmatic concepts of this increasingly important technology. There are two main technologies in the marketplace of advanced CMOS circuits: FinFETs and fully depleted silicon-on-insulators (FD-SOI). The latter is unchallenged in the field of low-power, high-frequency, and Internet-of-Things (IOT) circuits. The topic is very timely at research and development levels. Compared to existing books on SOI materials and devices, this book covers exhaustively the FD-SOI domain. Fully Depleted Silicon-On-Insulator is based on the expertise of one of the most eminent individuals in the community, Dr. Sorin Cristoloveanu, an IEEE Andrew Grove 2017 award recipient "For contributions to silicon-on-insulator technology and thin body devices." In the book, he shares key insights on the technological aspects, operation mechanisms, characterization techniques, and most promising emerging applications. Early praise for Fully Depleted Silicon-On-Insulator "It is an excellent written guide for everyone who would like to study SOI deeply, specially focusing on FD-SOI." --Dr. Katsu Izumi, Formerly at NTT Laboratories and then at Osaka Prefecture University, Japan "FDSOI technology is poised to catch an increasingly large portion of the semiconductor market. This book fits perfectly in this new paradigm [...] It covers many SOI topics which have never been described in a book before." --Professor Jean-Pierre Colinge, Formerly at TSMC and then at CEA-LETI, Grenoble, France "This book, written by one of the true experts and pioneers in the silicon-on-insulator field, is extremely timely because of the growing footprint of FD-SOI in modern silicon technology, especially in IoT applications. Written in a delightfully informal style yet comprehensive in its coverage, the book describes both the device physics underpinning FD-SOI technology and the cutting-edge, perhaps even futuristic devices enabled by it." --Professor Alexander Zaslavsky, Brown University, USA "A superbly written book on SOI technology by a master in the field." --Professor Yuan Taur, University of California, San Diego, USA "The author is a world-top researcher of SOI device/process technology. This book is his masterpiece and important for the FD-SOI archive. The reader will learn much from the book." --Professor Hiroshi Iwai, National Yang Ming Chiao Tung University, Taiwan From the author "It is during our global war against the terrifying coalition of corona and insidious computer viruses that this book has been put together. Continuous enlightenment from FD-SOI helped me cross this black and gray period. I shared a lot of myself in this book. The rule of the game was to keep the text light despite the heavy technical content. There are even tentative FD-SOI hieroglyphs on the front cover, composed of curves discussed in the book." - Written by a top expert in the silicon-on-insulator community and IEEE Andrew Grove 2017 award recipient - Comprehensively addresses the technology aspects, operation mechanisms and electrical characterization techniques for FD-SOI devices - Discusses FD-SOI's most promising device structures for memory, sensing and emerging applications

International Aerospace Abstracts

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Publisher :
ISBN 13 :
Total Pages : 940 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis International Aerospace Abstracts by :

Download or read book International Aerospace Abstracts written by and published by . This book was released on 1997 with total page 940 pages. Available in PDF, EPUB and Kindle. Book excerpt:

Encyclopedia of Materials

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Publisher :
ISBN 13 :
Total Pages : 1008 pages
Book Rating : 4.3/5 (91 download)

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Book Synopsis Encyclopedia of Materials by : K. H. J. Buschow

Download or read book Encyclopedia of Materials written by K. H. J. Buschow and published by . This book was released on 2001 with total page 1008 pages. Available in PDF, EPUB and Kindle. Book excerpt: Accompanyind CR-ROM conrtains The Encyclopedia of Materials Science and Technology on a web access disc.