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Monolithic Integration Of Phase Change Materials And Aluminum Nitride Contour Mode Mems Resonators For Highly Reconfigurable Radio Frequency Systems
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Book Synopsis Monolithic Integration of Phase Change Materials and Aluminum Nitride Contour-mode MEMS Resonators for Highly Reconfigurable Radio Frequency Systems by : Gwendolyn Eve Hummel
Download or read book Monolithic Integration of Phase Change Materials and Aluminum Nitride Contour-mode MEMS Resonators for Highly Reconfigurable Radio Frequency Systems written by Gwendolyn Eve Hummel and published by . This book was released on 2015 with total page 47 pages. Available in PDF, EPUB and Kindle. Book excerpt: The problem today in the world of RF systems is the extremely crowded and rapidly changing modern military and commercial spectral environment. This increases the demand for highly reconfigurable, miniaturized, and low power RF system elements such as resonators and filters significantly. As a solution to this issue, resonators and filters with a switching element, integrated on the same substrate, can be used to build dynamically reconfigurable filters that can operate around different center frequency bands, and then within each frequency band, the roll-off, bandwidth, and order of the filter response can be programmed. The integration of a capacitor, switch, and resonator into a single device will reduce the insertion loss and size requirement of the system by minimizing the number of physically separated RF components. This thesis presents a unique solution by monolithically integrating phase change material switches and aluminum nitride contour-mode resonators to produce reconfigurable resonators for the realization of intrinsically switchable and reconfigurable filter banks.
Book Synopsis High-Q Aluminum Nitride RF MEMS Lamb Wave Resonators and Narrowband Filters by : TING-TA YEN
Download or read book High-Q Aluminum Nitride RF MEMS Lamb Wave Resonators and Narrowband Filters written by TING-TA YEN and published by . This book was released on 2012 with total page 194 pages. Available in PDF, EPUB and Kindle. Book excerpt: The increasing demands for higher performance, advanced wireless and mobile communication systems have continuously driven device innovations and system improvements. In order to reduce power consumption and integration complexity, radio frequency (RF) microelectromechanical systems (MEMS) resonators and filters have been considered as direct replacements for off-chip passive components. In this dissertation, a new radio architecture for direct channel selection is explored. The primary elements in this new architecture include a multitude of closely-spaced narrowband filters (i.e., a filter bank) and an array of low-loss RF switches. This work addresses a number of issues related to this modern channel-select RF front end and explores the potential of utilizing piezoelectric aluminum nitride (AlN) resonator technology to fulfill these technical challenges. Characteristic studies of acoustic waves propagating in a piezoelectric thin film suggest the use of high-phase-velocity Lamb wave mode vibration for higher frequency applications. The lowest-order symmetric modes (S0 modes) can be efficiently excited, via the d31 (e31) piezoelectric coefficient, by utilizing interdigital transducer (IDT) electrodes, enabling co-fabrication of devices operating from tens of megahertz up to a few gigahertz on the same chip. An AlN "overhang" fine frequency selection technique is experimentally studied, allowing precise relative frequency control of an array of Lamb wave resonators (LWR) to 0.1%. Experimental results suggest the resonance frequency of Lamb wave resonators can be linearly adjusted by up to 5% with no significant effects on other resonator parameters. The first high temperature testing of AlN Lamb wave resonators above 600°C verifies its potential of being used in a harsh environment sensing telemetry. With a correct AlN/SiO2 thickness ratio, the first-order temperature coefficient of frequency (TCF) of a LWR can be reduced from -25 ppm/K to 3.9 ppm/K. In addition, increasing the input power level from -15 dBm to 10 dBm causes no bifurcation instability or frequency hysteresis on AlN Lamb wave resonators and only 0.05% frequency drift is recorded, showing an excellent power handling capability. A number of different resonator topologies are studied and demonstrated in this work as possible candidates for the filter bank. Mechanically-coupled filters utilize quarter-wavelength coupling beams to eliminate the mass-loading effect to adjoining resonators, and the bandwidths are determined by the equivalent stiffness of the coupling beam and the resonator itself. Numbers of identical resonators are mechanically-coupled as a filter with center frequency at 710 MHz and 0.4% fractional bandwidth (FBW). Furthermore, by introducing AlN overhang selection technique, an array of electrically self-coupled filters are fabricated with evenly-spaced center frequencies around 735 MHz and 500 kHz bandwidths (0.07% FBW). An array of ladder filters with center frequencies around 440 MHz and 2 MHz bandwidths (0.5% FBW) are also demonstrated, without post-process trimming. These closely and evenly spaced AlN Lamb wave filters demonstrate the potential to realize a purely mechanical, high performance, yet low-power RF front-end system. To further improve filter performance, capacitive-piezoelectric Lamb wave resonators, featuring sub-micron air gaps between piezoelectric structural layer and electrodes, are demonstrated with the aim of reducing interface energy dissipation. Quality factors of these capacitive-piezo Lamb wave resonators are measured over 5,000 at 940 MHz, posting the highest reported Q for single AlN resonators using d31 (e31) transduction. The Q * f products above 4.7×10^12 exceed those of commercialized FBAR and SAW resonators. Although the motional impedance of these devices inevitably rises to 1 kilo-ohm; when electrodes are separated from the AlN, this value is still much lower than conventional electrostatic resonators and can be easily terminated with on-chip matching networks. While designing the surface micromachining fabrication process dedicated to these capacitive-piezo devices, a thorough AlN etch rate table including commonly encountered cleaning and wet/dry etch steps is established. Although a large part of this dissertation concerns Lamb wave resonators, the last part of this dissertation focuses on a special corrugated cantilever beam design to improve conversion efficacy of a piezoelectric energy harvester. These vibration-sensitive piezoelectric AlN energy harvesters utilize corrugated cross-section cantilevers to achieve the same energy conversion effectiveness as that in a bimorph beam design, yet using a simple fabrication process similar to that of a unimorph beam. Due to the opposite signs of strains, the generated electric fields above and below the neutral plane have opposite polarities, and the generated energy can be extracted separately without the common cancellation issues encountered in a single piezoelectric beam design. This approach provides superior performance while simultaneously simplifying the fabrication process. A prototype multi-fold device resonating at 853 Hz with output power of 0.17 microwatt under a 1 G acceleration is recorded. Based on superb material properties and the 600°C thermal testing performed on RF resonators, these AlN energy harvesters offer a promising solution to scavenge vibration energies from harsh environments for advanced microsensor systems.
Book Synopsis Piezoelectric Aluminum Nitride MEMS Resonators for RF Signal Processing by : Philip Jason Stephanou
Download or read book Piezoelectric Aluminum Nitride MEMS Resonators for RF Signal Processing written by Philip Jason Stephanou and published by . This book was released on 2006 with total page 404 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis AlN and AlScN Contour Mode Resonators for MEMS-based RF Front Ends by : Andrea Lozzi
Download or read book AlN and AlScN Contour Mode Resonators for MEMS-based RF Front Ends written by Andrea Lozzi and published by . This book was released on 2019 with total page 148 pages. Available in PDF, EPUB and Kindle. Book excerpt: Mots-clés de l'auteur: RF MEMS ; Contour mode resonators ; Acoustics ; Piezoelectricity ; Microtechnology ; Quality factor ; Phase noise ; Electromechanical coupling ; Aluminum nitride ; Aluminum scandium nitride.
Book Synopsis Piezoelectric Aluminum Nitride Vibrating RF MEMS for Radio Front-end Technology by : Gianluca Piazza
Download or read book Piezoelectric Aluminum Nitride Vibrating RF MEMS for Radio Front-end Technology written by Gianluca Piazza and published by . This book was released on 2005 with total page 278 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Analysis of the Combined Mode Resonance in Aluminum Nitride MEMS Resonators by : Eric Walther-Grant
Download or read book Analysis of the Combined Mode Resonance in Aluminum Nitride MEMS Resonators written by Eric Walther-Grant and published by . This book was released on 2015 with total page 59 pages. Available in PDF, EPUB and Kindle. Book excerpt: Aluminum Nitride (AlN) contour-extensional mode resonators (CMRs) have shown great promise for use in a wide range of technologies due to their scalability and the ability to combine multiple resonant frequencies on a single chip. However, their low coupling, and hence figure of merit, is a significant downside to their use compared to other resonator designs such as film bulk acoustic wave resonators (FBARs) and surface acoustic wave resonators. Recently, researchers have discovered a theoretical new mode of resonance that would combine d31 nd d33 piezoelectric coefficients. By combining both modes, the resonator achieves notably improved kt2, without reducing the quality factor. This thesis is a thorough analysis of this new mode, looking closely at how and why it occurs, as well as the primary underlying design variables that control it. Through extensive use of finite element model (FEM) simulation, it is first proven that the new mode in fact combines d31 and d33. This thesis also examines how the coupling behavior alters the resonant frequency and how it affects, and is affected by, spurious modes. The results of this analysis show how to design improved combined mode resonators without the extensive use of time consuming FEM simulations. To achieve this goal, models are adapted from FBAR design to enable the prediction of the combined mode’s behavior. As a result, all significant underlying design variables are examined for their individual effects on this new resonance mode. When properly implemented, the combined mode effectively adds the coupling of its two underlying modes, leading to a considerable increase in kt2, allowing it to possibly surpass both FBARs and standard CMRs in figure of merit.
Book Synopsis High-Q AlN Contour Mode Resonators with Unattached, Voltage-Actuated Electrodes by : Robert A. Schneider
Download or read book High-Q AlN Contour Mode Resonators with Unattached, Voltage-Actuated Electrodes written by Robert A. Schneider and published by . This book was released on 2015 with total page 219 pages. Available in PDF, EPUB and Kindle. Book excerpt: High-Q narrowband filters at ultra-high frequencies hold promise for reducing noise and suppressing interferers in wireless transceivers, yet research efforts confront a daunting challenge. So far, no existing resonator technology can provide the simultaneous high-Q, high electromechanical coupling (k_{eff}^2), frequency tunability, low motional resistance (R_x), stopband rejection, self-switchability, frequency accuracy, and power handling desired to select individual channels or small portions of a band over a wide RF range. Indeed, each technology provides only a subset of the desired properties. Recently introduced "capacitive-piezoelectric" resonators, i.e., piezoelectric resonators with non-contacting transduction electrodes, known for achieving very good Q's, have recently emerged (in the early 2010's) as a contender among existing technologies to address the needs of RF narrowband selection. Several reports of such devices, made from aluminum nitride (AlN), have demonstrated improved Q's over attached electrode counterparts at frequencies up to 1.2 GHz, albeit with reduced transduction efficiency due to the added capacitive gaps. Fabrication challenges, while still allowing for a glimpse of the promise of this technology, have, until now, hindered attempts at more complex devices than just simple resonators with improved Q's. This thesis project demonstrates several key improvements to capacitive-piezo technology, which, taken together, further bolster its case for deployment for frequency control applications. First, new fabrication techniques improve yields, reliability, and performance. Second, design modifications now allow k_{eff}^2's on par even with attached-electrode contour-mode devices, while most importantly, achieving unprecedented Q-factors for AlN. Third, a new electrode-collapsed based resonance-quenching capability allows ON/OFF switching of resonators and filters, such as would be useful for a bank of parallel filters. Fourth, an integrated voltage-controlled gap-reduction-based frequency tuning mechanism permits wide frequency tuning of devices and thus much improved frequency accuracy. Gap actuation also allows for the decoupling of filters in the OFF state. And fifth, switchable and tunable capacitive-piezo narrow-band filters are demonstrated for the first time. This thesis is divided into eight parts. In the first chapter, context is provided to demonstrate the purpose of this work. RF channel selection is introduced and a survey of currently available technology is presented. The second chapter explains key operating principles for MEMS resonators so a novice reader can be better equipped to fully understand the design choices made in later chapters. Chapter 3, on high-performance capacitive-piezo disk resonators, introduces the fundamental device of this thesis, providing examples of performance and design optimization, experimental results, simulation methods, and modeling. Chapter 4 introduces capacitive-piezoelectric disk arrays as a method to increase the area and thereby reduce the motional resistance of the unit disk resonator. Chapter 5 discusses voltage controlled gap actuation of the capacitive piezoelectric transducer's top electrode, which enables voltage controlled frequency tuning and on/off switching. Chapter 6 takes a thorough look at the fabrication technology needed to make capacitive-piezo devices, including lessons learned on how to avoid certain pitfalls. Chapter 7, on filters, contains both theory and measurement results of filters. Chapter 8 concludes the thesis by summarizing the key achievements of Chapters 3 through 7, highlighting key areas needing further development, and discussing implications of this technology for the future.
Book Synopsis Temperature-Compensated and High-Q Piezoelectric Aluminum Nitride Lamb Wave Resonators for Timing and Frequency Control Applications by : Chih-Ming Lin
Download or read book Temperature-Compensated and High-Q Piezoelectric Aluminum Nitride Lamb Wave Resonators for Timing and Frequency Control Applications written by Chih-Ming Lin and published by . This book was released on 2013 with total page 384 pages. Available in PDF, EPUB and Kindle. Book excerpt: The explosive development of wireless and mobile communication systems has lead to rapid technology innovation in component performance, complementary metal-oxide semiconductor (CMOS) compatible fabrication techniques, and system improvement to satisfy requirements for faster signal processing, cost efficiency, chip miniaturization, and low power consumption. The demands for the high-performance communication systems whose fundamentals are precise timing and frequency control have driven the current research interests to develop advanced reference oscillators and radio frequency (RF) bandpass filters. In turn a promising microelectromechanical systems (MEMS) resonator technology is required to achieve the ultimate goal. That is, micromechanical vibrating resonators with high quality factor (Q) and good frequency-temperature stability at high series resonance frequency (fs) are the required fundamental components for a high-performance wireless communication system. Recently, Lamb wave mode propagating in piezoelectric thin plates has attracted great attention for designs of the electroacoustic resonators since it combines the advantages of bulk acoustic wave (BAW) and surface acoustic wave (SAW): high phase velocity and multiple frequency excitation by an interdigital transducer (IDT). More specifically, the Lamb wave resonator (LWR) based on an aluminum nitride (AlN) thin film has attracted many attentions because it can offer the high resonance frequency, small temperature-induced frequency drift, low motional resistance, and CMOS compatibility. The lowest-order symmetric (S0) Lamb wave mode propagation in the AlN thin plate is particularly preferred because it exhibits a phase velocity close to 10,000 m/s, a low dispersive phase velocity characteristic, and a moderate electromechanical coupling coefficient. However, the uncompensated AlN LWR shows a first-order temperature coefficient of frequency (TCF) of approximately -25 ppm/C. This level of the temperature stability is unsuitable for any timing application. In addition, the Q of the AlN LWR is degraded to several hundred while the IDT finger width is downscaled to a nanometer scale to raise the resonance frequency up to a few GHz. This dissertation presents comprehensive analytical and experimental results on a new class of temperature-compensated and high-Q piezoelectric AlN LWRs. The temperature compensation of the AlN LWR using the S0 Lamb wave mode is achieved by adding a layer of silicon dioxide (SiO2) with an appropriate thickness ratio to the AlN thin film, and the AlN/SiO2 LWRs can achieve a low first-order TCF at room temperature. Based on the multilayer plate composed of a 1-um-thick AlN film and a 0.83-um-thick SiO2 layer, a temperature-compensated LWR operating at a series resonance frequency of 711 MHz exhibits a zero first-order TCF and a small second-order TCF of -21.5 ppb/C^2 at its turnover temperature, 18.05 C. The temperature dependence of fractional frequency variation is less than 250 parts per million (ppm) over a wide temperature range from -55 to 125 C. In addition to the temperature compensation at room temperature, the thermal compensation of the AlN LWRs is experimentally demonstrated at high temperatures. By varying the normalized AlN and SiO2 thicknesses to the wavelength, the turnover temperature can be designed at high temperatures and the AlN LWRs are temperature-compensated at 214, 430, and 542 C, respectively. The temperature-compensated AlN/SiO2 LWRs are promising for a lot of applications including thermally stable oscillators, bandpass filters, and sensors at room temperature as well as high temperatures. The influences of the bottom electrode upon the characteristics of the LWRs utilizing the S0 Lamb wave mode in the AlN thin plate are theoretically and experimentally studied. Employment of a floating bottom electrode for the LWR reduces the static capacitance in the AlN membrane and accordingly enhances the effective coupling coefficient. The floating bottom electrode simultaneously offers a large coupling coefficient and a simple fabrication process than the grounded bottom electrode but the transduction efficiency is not sacrificed. In contrast to those with the bottom electrode, an AlN LWR with no bottom electrode shows a high Q of around 3,000 since it gets rid of the electrical loss in the metal-to-resonator interface. In addition, it exhibits better power handling capacity than those with the bottom electrode since less thermal nonlinearity induced by the self-heating exists in the resonators. In order to boost the Q, a new class of the AlN LWRs using suspended convex edges is introduced in this dissertation for the first time. The suspended convex edges can efficiently reflect the Lamb waves back towards the transducer as well as confine the mechanical energy in the resonant body. Accordingly the mechanical energy dissipation through the support tethers is significantly minimized and the Q can be markedly enhanced. More specifically, the measured frequency response of a 491.8-MHz LWR with suspended biconvex edges yields a Q of 3,280 which represents a 2.6x enhancement in Q over a 517.9-MHz LWR based on the same AlN thin plate but with the suspended flat edges. The suspended convex edges can efficiently confine mechanical energy in the LWR and reduce the energy dissipation through the support tethers without increasing the motional impedance of the resonator. In addition, the radius of curvature of the suspended convex edges and the AlN thickness normalized to the wavelength can be further optimized to simultaneously obtain high Q, low motional impedance, and large effective coupling coefficient. To further enhance the Q of the LWR, a composite plate including an AlN thin film and an epitaxial cubic silicon carbide (3C-SiC) layer is introduced to enable high-Q and high-frequency micromechanical resonators utilizing high-order Lamb wave modes. The use of the epitaxial 3C-SiC layer is attractive as SiC crystals have been theoretically proven to have an exceptionally large fs and Q product due to its low acoustic loss characteristic at microwave frequencies. In addition, AlN and 3C-SiC have well-matched mechanical and electrical properties, making them a suitable material stack for the electroacoustic resonators. The epitaxial 3C-SiC layer not only provides the micromechanical resonators with a low acoustic loss layer to boost their Q but also enhances the electromechanical coupling coefficients of some high-order Lamb waves in the AlN/3C-SiC composite plate. A micromachined electroacoustic resonator utilizing the third quasi-symmetric (QS3) Lamb wave mode in the AlN/3C-SiC composite plate exhibits a Q of 5,510 at 2.92 GHz, resulting in the highest fs and Q product, 1.61x10^13 Hz, among suspended piezoelectric thin film resonators to date.
Book Synopsis Aluminum Nitride Contour Mode Resonators by : Joshua Robert Melnick
Download or read book Aluminum Nitride Contour Mode Resonators written by Joshua Robert Melnick and published by . This book was released on 2015 with total page 250 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Super High Frequency Width Extensional Aluminum Nitride (AlN) MEMS Resonators by :
Download or read book Super High Frequency Width Extensional Aluminum Nitride (AlN) MEMS Resonators written by and published by . This book was released on 2009 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis GaN Microelectromechanical System Resonators by : Laura C. Popa
Download or read book GaN Microelectromechanical System Resonators written by Laura C. Popa and published by . This book was released on 2015 with total page 206 pages. Available in PDF, EPUB and Kindle. Book excerpt: As a wide band-gap semiconductor, with large breakdown fields and saturation velocities, Gallium Nitride (GaN) has been increasingly used in high-power, high-frequency electronics and monolithic microwave integrated circuits (MMICs). At the same time, GaN also has excellent electromechanical properties, such as high acoustic velocities and low elastic losses. Together with a strong piezoelectric coupling, these qualities make GaN ideal for RF MEMS resonators. Hence, GaN technology offers a platform for the seamless integration of low-loss, piezoelectric RF MEMS resonators with high power, high frequency electronics. Monolithic integration of MEMS resonators with ICs would lead to reduced parasitics and matching constraints, enabling high-purity clocks and frequency-selective filters for signal processing and high-frequency wireless communications. This thesis highlights the physics and resonator design considerations that must be taken into account in a monolithically integrated solution. We then show devices that achieve the highest frequency-quality factor product in GaN resonators to date (1.56 x 1013). We also highlight several unique transduction mechanisms enabled by this technology, such as the ability to use the 2D electron gas (2DEG) channel of High Electron Mobility Transistors (HEMTs) as an electrode for transduction. This enables a unique out-of-line switching capability which allowed us to demonstrate the first DC switchable solid-state piezoelectric resonator. Finally, we discuss the benefits of using active HEMT sensing of the mechanical signal when scaling to GHz frequencies, which enabled the highest frequency lithographically defined resonance reported to date in GaN (3.5 GHz). These demonstrated features sh
Book Synopsis Piezoelectric MEMS Resonators by : Harmeet Bhugra
Download or read book Piezoelectric MEMS Resonators written by Harmeet Bhugra and published by Springer. This book was released on 2017-01-09 with total page 423 pages. Available in PDF, EPUB and Kindle. Book excerpt: This book introduces piezoelectric microelectromechanical (pMEMS) resonators to a broad audience by reviewing design techniques including use of finite element modeling, testing and qualification of resonators, and fabrication and large scale manufacturing techniques to help inspire future research and entrepreneurial activities in pMEMS. The authors discuss the most exciting developments in the area of materials and devices for the making of piezoelectric MEMS resonators, and offer direct examples of the technical challenges that need to be overcome in order to commercialize these types of devices. Some of the topics covered include: Widely-used piezoelectric materials, as well as materials in which there is emerging interest Principle of operation and design approaches for the making of flexural, contour-mode, thickness-mode, and shear-mode piezoelectric resonators, and examples of practical implementation of these devices Large scale manufacturing approaches, with a focus on the practical aspects associated with testing and qualification Examples of commercialization paths for piezoelectric MEMS resonators in the timing and the filter markets ...and more! The authors present industry and academic perspectives, making this book ideal for engineers, graduate students, and researchers.
Book Synopsis Power Handling and Intermodulation Distortion of Contour-Mode AlN MEMS Resonators and Filters by :
Download or read book Power Handling and Intermodulation Distortion of Contour-Mode AlN MEMS Resonators and Filters written by and published by . This book was released on 2011 with total page 4 pages. Available in PDF, EPUB and Kindle. Book excerpt:
Book Synopsis Tuneable Film Bulk Acoustic Wave Resonators by : Spartak Gevorgian
Download or read book Tuneable Film Bulk Acoustic Wave Resonators written by Spartak Gevorgian and published by Springer Science & Business Media. This book was released on 2013-02-01 with total page 264 pages. Available in PDF, EPUB and Kindle. Book excerpt: To handle many standards and ever increasing bandwidth requirements, large number of filters and switches are used in transceivers of modern wireless communications systems. It makes the cost, performance, form factor, and power consumption of these systems, including cellular phones, critical issues. At present, the fixed frequency filter banks based on Film Bulk Acoustic Resonators (FBAR) are regarded as one of the most promising technologies to address performance -form factor-cost issues. Even though the FBARs improve the overall performances the complexity of these systems remains high.a Attempts are being made to exclude some of the filters by bringing the digital signal processing (including channel selection) as close to the antennas as possible. However handling the increased interference levels is unrealistic for low-cost battery operated radios. Replacing fixed frequency filter banks by one tuneable filter is the most desired and widely considered scenario. As an example, development of the software based cognitive radios is largely hindered by the lack of adequate agile components, first of all tuneable filters. In this sense the electrically switchable and tuneable FBARs are the most promising components to address the complex cost-performance issues in agile microwave transceivers, smart wireless sensor networks etc.Tuneable Film Bulk Acoustic Wave Resonators discusses FBAR need, physics, designs, modelling, fabrication and applications. Tuning of the resonant frequency of the FBARs is considered. Switchable and tuneable FBARs based on electric field induced piezoelectric effect in paraelectric phase ferroelectrics are covered. The resonance of these resonators may be electrically switched on and off and tuned without hysteresis.The book is aimed at microwave and sensor specialists in the industry and graduate students. Readers will learn about principles of operation and possibilities of the switchable and tuneable FBARs, and will be given general guidelines for designing, fabrication and applications of these devices."
Book Synopsis Understanding Smart Sensors by : Randy Frank
Download or read book Understanding Smart Sensors written by Randy Frank and published by Artech House Publishers. This book was released on 1996 with total page 296 pages. Available in PDF, EPUB and Kindle. Book excerpt: "Two of the most important trends in sensor development in recent years have been advances in micromachined sensing elements of all kinds, and the increase in intelligence applied at the sensor level. This book addresses both, and provides a good overview of current technology". -- I&CS
Download or read book NANO-CHIPS 2030 written by Boris Murmann and published by Springer Nature. This book was released on 2020-06-08 with total page 597 pages. Available in PDF, EPUB and Kindle. Book excerpt: In this book, a global team of experts from academia, research institutes and industry presents their vision on how new nano-chip architectures will enable the performance and energy efficiency needed for AI-driven advancements in autonomous mobility, healthcare, and man-machine cooperation. Recent reviews of the status quo, as presented in CHIPS 2020 (Springer), have prompted the need for an urgent reassessment of opportunities in nanoelectronic information technology. As such, this book explores the foundations of a new era in nanoelectronics that will drive progress in intelligent chip systems for energy-efficient information technology, on-chip deep learning for data analytics, and quantum computing. Given its scope, this book provides a timely compendium that hopes to inspire and shape the future of nanoelectronics in the decades to come.
Book Synopsis Silicon Photonics for High-Performance Computing and Beyond by : Mahdi Nikdast
Download or read book Silicon Photonics for High-Performance Computing and Beyond written by Mahdi Nikdast and published by CRC Press. This book was released on 2021-11-16 with total page 391 pages. Available in PDF, EPUB and Kindle. Book excerpt: Silicon photonics is beginning to play an important role in driving innovations in communication and computation for an increasing number of applications, from health care and biomedical sensors to autonomous driving, datacenter networking, and security. In recent years, there has been a significant amount of effort in industry and academia to innovate, design, develop, analyze, optimize, and fabricate systems employing silicon photonics, shaping the future of not only Datacom and telecom technology but also high-performance computing and emerging computing paradigms, such as optical computing and artificial intelligence. Different from existing books in this area, Silicon Photonics for High-Performance Computing and Beyond presents a comprehensive overview of the current state-of-the-art technology and research achievements in applying silicon photonics for communication and computation. It focuses on various design, development, and integration challenges, reviews the latest advances spanning materials, devices, circuits, systems, and applications. Technical topics discussed in the book include: • Requirements and the latest advances in high-performance computing systems • Device- and system-level challenges and latest improvements to deploy silicon photonics in computing systems • Novel design solutions and design automation techniques for silicon photonic integrated circuits • Novel materials, devices, and photonic integrated circuits on silicon • Emerging computing technologies and applications based on silicon photonics Silicon Photonics for High-Performance Computing and Beyond presents a compilation of 19 outstanding contributions from academic and industry pioneers in the field. The selected contributions present insightful discussions and innovative approaches to understand current and future bottlenecks in high-performance computing systems and traditional computing platforms, and the promise of silicon photonics to address those challenges. It is ideal for researchers and engineers working in the photonics, electrical, and computer engineering industries as well as academic researchers and graduate students (M.S. and Ph.D.) in computer science and engineering, electronic and electrical engineering, applied physics, photonics, and optics.
